JPH1067986A5 - - Google Patents

Info

Publication number
JPH1067986A5
JPH1067986A5 JP1997147688A JP14768897A JPH1067986A5 JP H1067986 A5 JPH1067986 A5 JP H1067986A5 JP 1997147688 A JP1997147688 A JP 1997147688A JP 14768897 A JP14768897 A JP 14768897A JP H1067986 A5 JPH1067986 A5 JP H1067986A5
Authority
JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
fluoride
polishing slurry
alumina
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997147688A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1067986A (ja
JP3592894B2 (ja
Filing date
Publication date
Priority claimed from US08/659,419 external-priority patent/US5993686A/en
Application filed filed Critical
Publication of JPH1067986A publication Critical patent/JPH1067986A/ja
Publication of JPH1067986A5 publication Critical patent/JPH1067986A5/ja
Application granted granted Critical
Publication of JP3592894B2 publication Critical patent/JP3592894B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP14768897A 1996-06-06 1997-06-05 フッ化物添加剤を含む化学的・機械的研磨用スラリーとその使用方法 Expired - Fee Related JP3592894B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/659419 1996-06-06
US08/659,419 US5993686A (en) 1996-06-06 1996-06-06 Fluoride additive containing chemical mechanical polishing slurry and method for use of same

Publications (3)

Publication Number Publication Date
JPH1067986A JPH1067986A (ja) 1998-03-10
JPH1067986A5 true JPH1067986A5 (enExample) 2004-07-22
JP3592894B2 JP3592894B2 (ja) 2004-11-24

Family

ID=24645336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14768897A Expired - Fee Related JP3592894B2 (ja) 1996-06-06 1997-06-05 フッ化物添加剤を含む化学的・機械的研磨用スラリーとその使用方法

Country Status (11)

Country Link
US (1) US5993686A (enExample)
EP (1) EP0811666B1 (enExample)
JP (1) JP3592894B2 (enExample)
AT (1) ATE247700T1 (enExample)
AU (1) AU3138597A (enExample)
DE (1) DE69724187T2 (enExample)
ID (1) ID17160A (enExample)
IL (1) IL120912A (enExample)
MY (1) MY132376A (enExample)
TW (1) TW375660B (enExample)
WO (1) WO1997047030A1 (enExample)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US20040140288A1 (en) * 1996-07-25 2004-07-22 Bakul Patel Wet etch of titanium-tungsten film
US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US6117783A (en) * 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US6039891A (en) 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
WO1999016842A1 (de) * 1997-09-26 1999-04-08 Infineon Technologies Ag Poliermittel und die verwendung dieses poliermittels zum planarisieren eines halbleitersubstrats
US6190237B1 (en) * 1997-11-06 2001-02-20 International Business Machines Corporation pH-buffered slurry and use thereof for polishing
US6362101B2 (en) * 1997-11-24 2002-03-26 United Microelectronics Corp. Chemical mechanical polishing methods using low pH slurry mixtures
US6294105B1 (en) * 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
JP3147072B2 (ja) * 1998-02-26 2001-03-19 日本電気株式会社 半導体装置の製造方法
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US6435947B2 (en) 1998-05-26 2002-08-20 Cabot Microelectronics Corporation CMP polishing pad including a solid catalyst
JP3998813B2 (ja) * 1998-06-15 2007-10-31 株式会社フジミインコーポレーテッド 研磨用組成物
GB2384003B (en) * 1998-06-15 2003-09-03 Fujimi Inc Polishing composition
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6358853B2 (en) * 1998-09-10 2002-03-19 Intel Corporation Ceria based slurry for chemical-mechanical polishing
ATE474899T1 (de) * 1998-10-23 2010-08-15 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung,eine beschleunigerlösung enthaltend
US6276996B1 (en) 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6206756B1 (en) 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
SG73683A1 (en) * 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
JP2000160139A (ja) * 1998-12-01 2000-06-13 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6395194B1 (en) * 1998-12-18 2002-05-28 Intersurface Dynamics Inc. Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same
JP3177973B2 (ja) * 1999-01-28 2001-06-18 日本電気株式会社 半導体装置の製造方法
US6251150B1 (en) * 1999-05-27 2001-06-26 Ekc Technology, Inc. Slurry composition and method of chemical mechanical polishing using same
US6630433B2 (en) * 1999-07-19 2003-10-07 Honeywell International Inc. Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
US6225223B1 (en) * 1999-08-16 2001-05-01 Taiwan Semiconductor Manufacturing Company Method to eliminate dishing of copper interconnects
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6297208B1 (en) * 1999-10-11 2001-10-02 Iron Out, Inc. Rust stain removal formula
KR100343391B1 (ko) * 1999-11-18 2002-08-01 삼성전자 주식회사 화학 및 기계적 연마용 비선택성 슬러리 및 그제조방법과, 이를 이용하여 웨이퍼상의 절연층 내에플러그를 형성하는 방법
US6872328B2 (en) * 1999-12-17 2005-03-29 Cabot Microelectronics Corporation Method of polishing or planarizing a substrate
JP4500429B2 (ja) * 1999-12-24 2010-07-14 株式会社トクヤマ バリア膜用研磨剤
JP2004127327A (ja) * 1999-12-27 2004-04-22 Showa Denko Kk 磁気ディスク基板研磨用組成物
US6454820B2 (en) * 2000-02-03 2002-09-24 Kao Corporation Polishing composition
US7675766B2 (en) * 2000-02-11 2010-03-09 Axon Technologies Corporation Microelectric programmable device and methods of forming and programming the same
EP1272580A2 (en) * 2000-04-11 2003-01-08 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide
JP3945964B2 (ja) 2000-06-01 2007-07-18 株式会社ルネサステクノロジ 研磨剤、研磨方法及び半導体装置の製造方法
US6524168B2 (en) 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
US6653242B1 (en) * 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
KR100674895B1 (ko) * 2000-07-18 2007-01-26 삼성전자주식회사 산화막 ｃｍｐ용 슬러리
US6461227B1 (en) 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
EP1347842B1 (en) * 2000-11-22 2011-02-23 Ingersoll Cm Systems, Inc. Apparatus and method for rolling workpieces
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
JP2002288821A (ja) * 2001-03-27 2002-10-04 Showa Denko Kk テクスチャリング加工用組成物
WO2002076902A1 (en) * 2001-03-27 2002-10-03 Showa Denko K.K. Composition for texturing process
KR100557600B1 (ko) * 2001-06-29 2006-03-10 주식회사 하이닉스반도체 나이트라이드 cmp용 슬러리
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
JP4954398B2 (ja) * 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
AU2002359356A1 (en) * 2001-11-16 2003-06-10 Ferro Corporation Particles for use in cmp slurries and method for producing them
KR100415617B1 (ko) * 2001-12-06 2004-01-24 엘지.필립스 엘시디 주식회사 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법
KR100460312B1 (ko) * 2001-12-10 2004-12-04 제일모직주식회사 금속배선 연마용 슬러리 조성물
KR100474540B1 (ko) * 2002-06-24 2005-03-10 주식회사 하이닉스반도체 반도체소자의 금속배선 콘택플러그 형성방법
US20030136759A1 (en) * 2002-01-18 2003-07-24 Cabot Microelectronics Corp. Microlens array fabrication using CMP
US7132058B2 (en) 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
US20030139047A1 (en) * 2002-01-24 2003-07-24 Thomas Terence M. Metal polishing slurry having a static etch inhibitor and method of formulation
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US6884729B2 (en) * 2002-02-11 2005-04-26 Cabot Microelectronics Corporation Global planarization method
US6853474B2 (en) * 2002-04-04 2005-02-08 Cabot Microelectronics Corporation Process for fabricating optical switches
DE10227867A1 (de) * 2002-06-22 2004-01-08 Merck Patent Gmbh Zusammensetzung zum Entfernen von Sidewall-Residues
US20040007690A1 (en) * 2002-07-12 2004-01-15 Cabot Microelectronics Corp. Methods for polishing fiber optic connectors
US20040144038A1 (en) * 2002-12-09 2004-07-29 Junaid Ahmed Siddiqui Composition and associated method for oxide chemical mechanical planarization
US6893476B2 (en) * 2002-12-09 2005-05-17 Dupont Air Products Nanomaterials Llc Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal
US20040188379A1 (en) * 2003-03-28 2004-09-30 Cabot Microelectronics Corporation Dielectric-in-dielectric damascene process for manufacturing planar waveguides
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
US6929983B2 (en) 2003-09-30 2005-08-16 Cabot Microelectronics Corporation Method of forming a current controlling device
JP2005138197A (ja) * 2003-11-04 2005-06-02 Fujimi Inc 研磨用組成物及び研磨方法
US7419911B2 (en) * 2003-11-10 2008-09-02 Ekc Technology, Inc. Compositions and methods for rapidly removing overfilled substrates
US7076891B2 (en) * 2003-11-12 2006-07-18 Nike, Inc. Flexible fluid-filled bladder for an article of footwear
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
JP4974447B2 (ja) * 2003-11-26 2012-07-11 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US20050148289A1 (en) * 2004-01-06 2005-07-07 Cabot Microelectronics Corp. Micromachining by chemical mechanical polishing
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
CN1854234B (zh) 2005-04-21 2013-03-20 安集微电子（上海）有限公司 抛光浆料及其用途和使用方法
US7576361B2 (en) * 2005-08-03 2009-08-18 Aptina Imaging Corporation Backside silicon wafer design reducing image artifacts from infrared radiation
US8163049B2 (en) * 2006-04-18 2012-04-24 Dupont Air Products Nanomaterials Llc Fluoride-modified silica sols for chemical mechanical planarization
US20080020680A1 (en) * 2006-07-24 2008-01-24 Cabot Microelectronics Corporation Rate-enhanced CMP compositions for dielectric films
US7691287B2 (en) * 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
CN101451049A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
US8506831B2 (en) * 2008-12-23 2013-08-13 Air Products And Chemicals, Inc. Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
JP2011135089A (ja) * 2011-02-07 2011-07-07 Jsr Corp 化学機械研磨用水系分散体
JP5542750B2 (ja) * 2011-07-04 2014-07-09 Ｊｓｒ株式会社 化学機械研磨用水系分散体
KR101257336B1 (ko) * 2012-04-13 2013-04-23 유비머트리얼즈주식회사 연마용 슬러리 및 이를 이용한 기판 연마 방법
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
SG10201503988YA (en) * 2014-05-29 2015-12-30 Applied Materials Inc Reduced titanium undercut in etch process
US10159949B2 (en) 2016-03-11 2018-12-25 Fujifilm Planar Solutions, LLC Advanced fluid processing methods and systems
CN110168702B (zh) * 2016-12-26 2023-12-29 福吉米株式会社 研磨用组合物及研磨方法
JP7096884B2 (ja) 2017-10-25 2022-07-06 サン－ゴバン セラミックス アンド プラスティクス，インコーポレイティド 材料除去作業を実施するための組成物及びその形成方法
CN109728158B (zh) * 2017-10-27 2023-07-07 华邦电子股份有限公司 电阻式存储器及其制造方法与化学机械研磨制程
US10858544B2 (en) * 2018-05-24 2020-12-08 Taiwan Semiconductor Manufacturing Company Ltd. Chemical mechanical polishing slurry and chemical mechanical polishing process using the same
JP7450334B2 (ja) * 2018-12-27 2024-03-15 東京応化工業株式会社 エッチング液、及び半導体素子の製造方法
JP2019131814A (ja) * 2019-03-08 2019-08-08 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
US11597854B2 (en) * 2019-07-16 2023-03-07 Cmc Materials, Inc. Method to increase barrier film removal rate in bulk tungsten slurry
JP7575878B2 (ja) 2020-03-24 2024-10-30 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法、および研磨方法
EP4438689A1 (en) * 2023-03-30 2024-10-02 Acondicionamiento Tarrasense Method of polishing and brightening a workpiece of copper or copper alloy
CN118667447B (zh) * 2024-08-22 2025-05-16 芯越微电子材料(嘉兴)有限公司 一种化学机械抛光液及其制备方法和应用

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385682A (en) * 1965-04-29 1968-05-28 Sprague Electric Co Method and reagent for surface polishing
US3565707A (en) * 1969-03-03 1971-02-23 Fmc Corp Metal dissolution
US3843430A (en) * 1972-04-03 1974-10-22 Macdermid Inc Chromate-free bright dip for zinc and cadmium surfaces
US3887403A (en) * 1972-07-05 1975-06-03 Mc Donnell Douglas Corp Process and solution for removing titanium and refractory metals and their alloys from tools
US4345969A (en) * 1981-03-23 1982-08-24 Motorola, Inc. Metal etch solution and method
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4789648A (en) * 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4956313A (en) * 1987-08-17 1990-09-11 International Business Machines Corporation Via-filling and planarization technique
US4954459A (en) * 1988-05-12 1990-09-04 Advanced Micro Devices, Inc. Method of planarization of topologies in integrated circuit structures
US4910155A (en) * 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5137544A (en) * 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5157876A (en) * 1990-04-10 1992-10-27 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US4992135A (en) * 1990-07-24 1991-02-12 Micron Technology, Inc. Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
US5173438A (en) * 1991-02-13 1992-12-22 Micron Technology, Inc. Method of performing a field implant subsequent to field oxide fabrication by utilizing selective tungsten deposition to produce encroachment-free isolation
US5244534A (en) * 1992-01-24 1993-09-14 Micron Technology, Inc. Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5314843A (en) * 1992-03-27 1994-05-24 Micron Technology, Inc. Integrated circuit polishing method
US5209816A (en) * 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5389194A (en) * 1993-02-05 1995-02-14 Lsi Logic Corporation Methods of cleaning semiconductor substrates after polishing
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5407526A (en) * 1993-06-30 1995-04-18 Intel Corporation Chemical mechanical polishing slurry delivery and mixing system
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP2600600B2 (ja) * 1993-12-21 1997-04-16 日本電気株式会社 研磨剤とその製法及びそれを用いた半導体装置の製造方法
US5439551A (en) * 1994-03-02 1995-08-08 Micron Technology, Inc. Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
JPH08116016A (ja) * 1994-10-15 1996-05-07 Toshiba Corp リードフレーム及び半導体装置
US5478436A (en) * 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
US5534462A (en) * 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5494849A (en) * 1995-03-23 1996-02-27 Si Bond L.L.C. Single-etch stop process for the manufacture of silicon-on-insulator substrates
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5645736A (en) * 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
US5647952A (en) * 1996-04-01 1997-07-15 Industrial Technology Research Institute Chemical/mechanical polish (CMP) endpoint method
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5756398A (en) * 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US5770103A (en) * 1997-07-08 1998-06-23 Rodel, Inc. Composition and method for polishing a composite comprising titanium

Similar Documents

Publication Publication Date Title
JPH1067986A5 (enExample)
EP1299489B1 (en) Cmp polishing composition for metal
EP1852481B1 (en) Silane containing polishing composition for CMP
EP0846742B1 (en) Chemical mechanical polishing slurry useful for copper substrates
JP3822339B2 (ja) 金属のｃｍｐに有用な組成物
KR102774705B1 (ko) 양이온성 계면활성제를 함유하는 텅스텐-가공 슬러리
CN1849378B (zh) 化学-机械抛光组合物及其使用方法
CN100372902C (zh) 稀土盐/氧化剂为基础的化学-机械抛光方法
JP2003507895A (ja) 停止化合物を伴う化学機械的研磨系及びその使用方法
JP2006511931A (ja) 研磨スラリー系ならびに金属研磨および除去プロセス
WO1998013536A1 (en) Multi-oxidizer slurry for chemical mechanical polishing
TWI388638B (zh) 釕化學機械研磨組合物及方法
JP2002516378A (ja) 固体触媒を含むｃｍｐスラリー
ID17160A (id) Aditif fluorida yang mengandung bubur pemoles mekanis-kimia dan metode penggunaan bahan tersebut
EP1778809A1 (en) CHEMICAL-MECHANICAL POLISHING (CMP) SLURRY CONTAINING CLAY AND CeO2 ABRASIVE PARTICLES AND METHOD OF PLANARIZING SURFACES
EP1098948A1 (en) Chemical mechanical polishing slurry useful for copper/tantalum substrate
WO2000000561A1 (en) Chemical mechanical polishing slurry useful for copper/tantalum substrates
CA2324151A1 (en) Chemical mechanical polishing slurry useful for copper substrates
TW200806781A (en) Fluoride-modified silica sols for chemical mechanical planarization
JP2003516626A (ja) 化学的機械研磨方法
JP2011503873A5 (enExample)
US20050072054A1 (en) Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces
TW202421735A (zh) 具有含硫陰離子界面活性劑之鎢之化學機械拋光（cmp）組合物
JP2025042586A (ja) 研磨用組成物及び表面処理方法
EP1675924A1 (en) Chemical-mechanical polishing (cmp) slurry and method of planarizing computer memory disk surfaces