US3385682A - Method and reagent for surface polishing - Google Patents
Method and reagent for surface polishing Download PDFInfo
- Publication number
- US3385682A US3385682A US451995A US45199565A US3385682A US 3385682 A US3385682 A US 3385682A US 451995 A US451995 A US 451995A US 45199565 A US45199565 A US 45199565A US 3385682 A US3385682 A US 3385682A
- Authority
- US
- United States
- Prior art keywords
- reagent
- polishing
- slurry
- mechanical
- surface polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005498 polishing Methods 0.000 title description 17
- 239000003153 chemical reaction reagent Substances 0.000 title description 9
- 238000000034 method Methods 0.000 title description 9
- 239000002002 slurry Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000008139 complexing agent Substances 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 4
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 description 3
- 229930195725 Mannitol Natural products 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000000594 mannitol Substances 0.000 description 3
- 235000010355 mannitol Nutrition 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229960001484 edetic acid Drugs 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- 235000013024 sodium fluoride Nutrition 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000012042 active reagent Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- -1 chloride fluoride citrate tartrate cyanide oxalate Chemical compound 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TVBSSDNEJWXWFP-UHFFFAOYSA-N nitric acid perchloric acid Chemical compound O[N+]([O-])=O.OCl(=O)(=O)=O TVBSSDNEJWXWFP-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Definitions
- This invention relates to a meth d and reagent for polishing and preparing semiconductors, metals, and other materials for use in the electronics industry.
- An object of this invention is to provide a method and reagent for effectively polishing and preparing the surface of semiconductor crystals, combining the advantages of chemical and mechanical polishing.
- the reagent used in the method of this invention includes a c mplexing agent that can chelate with the material being polished, an oxidizing agent that can react with the material and an abrasive powder which are incorporated in a slurry using water or other media as a carrying agent.
- the slurry is applied to the material in a mechanical polisher such as Bausch & Lomb No. 2l-1l86 enclosed in an air-tight box under a positive pressure of filtered air or inert gas such as nitrogen.
- a Sterilshield enclosure made by Baker is particularly effective.
- the mechanical polisher used can be any standard mechanical polisher such as Bausch & Lomb No. 21-11-86 or Buehler Polishers or the new vibromatics put out by Fisher or Buehler. Prior to the polishing procedure a lapping schedule to remove all deformation caused by slicing or machining is essential. Regardless of how carefully the mechanical polishing operations are carried out, some surface deformation will remain.
- the incorporation of an active reagent to react with the material and a complexing agent to hold it in solution along with the usual abrasive slurry has a number of important advantages over either mechanical or chemical polishing:
- the reagent of this invention is particularly effective 3,385,682 Patented May 28, 1968 for polishing silicon, gallium-arsenide, germanium, and other semiconductors.
- the reagent or slurry of this invention attacks the surface to increase the rate of polishing, and dissolves the particles abraded from the material being polished to reduce abrasion and surface damage.
- the polishing involves a surface smearing or film to cover and fill in surface damage.
- the slurry of this invention dissolves this film and produces a comparatively damage free surface.
- Example 1 Silicon or gallium arsenide is used as the semic nductor.
- the slurry contains the following components: one pound Versene (the tetrasodium salt of ethylene diamine tetra acetic acid) per gal. of H 0; approximately 3% of H 0 i.e. 2030 cc. of 30% per 250 ml. charge of slurry and 50-60 g. of Linde metallurgical Grade High Purity Alumina Abrasive.
- Silicon is polished using 10 g. NaF, 5 g. NaOH, 50 ml. H 0 g. of Linde Metallurgical Grade Alumina and 25 ml. glycerine in 425 ml. H O.
- a reagent slurry for surface polishing a semiconductor consisting essentially of from 8 to 20% by weight of a member of the group consisting of the tetrasodium salt of ethylene diamine tetra acetic acid, sodium fluoride and mannitol; 1 to 10% by weight of a member of the group consisting of hydrogen peroxide and potassium nitrate; a carrying agent selected from the group consisting of water and a water and glycerine mixture; and from 3 4 20 to 80 g./250 ml.
- a method of polishing the surface of a semicon- 3,158,517 11/1964 Schwarzenberger 252-793 X ductor comprising applying the composition of claim 1 to 5 3,228,816 1/1966 Kendall 204-140.5 the surface of said semiconductor While maintaining rela- 3,248,235 4/ 1966 Pryor et al 51-304 21;; motion between sa1d semiconductor and said compo- OTHER REFERENCES References Cited Camp, A Study of the Etching Rate of Single-Crystal Germanium, Journal of Electro-Chem. Society, vol. 102, UNITED STATES PATENTS 10 Nov. 10, 1955, pp 1,800,881 4/1931 Andrus et a1. 106-14 2,082,950 6/ 1937 Green 106-14 DONALD J. ARNOLD, Primary Examiner.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
United States Patent 3,385,682 METHOD AND REAGENT FOR SURFACE POLISHING Jack Lowen, Williamstown, Mass, assignor to Sprague Electric Company, North Adams, Mass 'a corporation of Massachusetts No Drawing. Filed Apr. 29, 1965, Ser. No. 451,995
2 Claims. (Cl. 51293) ABSTRACT OF THE DISCLOSURE A semiconductor polishing composition and process comprising applying to a semiconductor a carrying agent, a complexing agent, an oxidizing agent, and an abrasive material.
This invention relates to a meth d and reagent for polishing and preparing semiconductors, metals, and other materials for use in the electronics industry.
Semiconductors or other materials used in the electronics industry must have a smooth surface to effectively operate in their intended manner particularly in the latest planar structures. At present, many methods involving mechanical polishing or chemical polishing are employed with varying degrees of success to obtain the desired surface smoothness. These methods, however, are usually either too time consuming or too ineflicient or yield surfaces marked by viscous fluid flow patterns.
An object of this invention is to provide a method and reagent for effectively polishing and preparing the surface of semiconductor crystals, combining the advantages of chemical and mechanical polishing.
In general, the reagent used in the method of this invention includes a c mplexing agent that can chelate with the material being polished, an oxidizing agent that can react with the material and an abrasive powder which are incorporated in a slurry using water or other media as a carrying agent. The slurry is applied to the material in a mechanical polisher such as Bausch & Lomb No. 2l-1l86 enclosed in an air-tight box under a positive pressure of filtered air or inert gas such as nitrogen. A Sterilshield enclosure made by Baker is particularly effective.
The mechanical polisher used can be any standard mechanical polisher such as Bausch & Lomb No. 21-11-86 or Buehler Polishers or the new vibromatics put out by Fisher or Buehler. Prior to the polishing procedure a lapping schedule to remove all deformation caused by slicing or machining is essential. Regardless of how carefully the mechanical polishing operations are carried out, some surface deformation will remain. The incorporation of an active reagent to react with the material and a complexing agent to hold it in solution along with the usual abrasive slurry has a number of important advantages over either mechanical or chemical polishing:
(1) It is faster than mechanical polishing. Using Versene and peroxide reduces the time necessary to pOlish silicon from about four hours to about one and one-half hours.
(2) Since the action is chemical as well as mechanical, the material abraded from the specimen reacts with the reagent and does not fill in scratches and imperfecti ns on the surface as in mechanical polishing. A polished surface as produced by this method will have less surface damage than a mechanically polished surface.
(3) Since the action is mechanical as well as chemical, the sample is not marked by swirling patterns of hydraulic flow and the edges are not rounded to any significant dimension. The solutions used are not as corrosive or toxic and therefore safer for routine use.
The reagent of this invention is particularly effective 3,385,682 Patented May 28, 1968 for polishing silicon, gallium-arsenide, germanium, and other semiconductors. The reagent or slurry of this invention attacks the surface to increase the rate of polishing, and dissolves the particles abraded from the material being polished to reduce abrasion and surface damage. Ordinarily, the polishing involves a surface smearing or film to cover and fill in surface damage. The slurry of this invention dissolves this film and produces a comparatively damage free surface.
The complexing agent used in the slurry may advantageously be selected from the following group:
Versene chloride fluoride citrate tartrate cyanide oxalate mannitol The oxidizing agent used in the slurry may advantageously be selected from the following group:
peroxide nitrate perchlorate persulfate (a) complexing agent, 8 to 20% by weight (b) oxidizing agent, 1 to 10% by weight (c) abrasive, 20 to -g./250 ml. of slurry The following are examples of specific applications of this invention:
Example 1 Silicon or gallium arsenide is used as the semic nductor. The slurry contains the following components: one pound Versene (the tetrasodium salt of ethylene diamine tetra acetic acid) per gal. of H 0; approximately 3% of H 0 i.e. 2030 cc. of 30% per 250 ml. charge of slurry and 50-60 g. of Linde metallurgical Grade High Purity Alumina Abrasive.
Example 2.
Silicon is polished using 10 g. NaF, 5 g. NaOH, 50 ml. H 0 g. of Linde Metallurgical Grade Alumina and 25 ml. glycerine in 425 ml. H O.
It is to be understood that the invention is not limited to the specific examples indicated above. For example, 5% KNO 5% KCl and 10% mannitol in a slurry containing 20% of Linde Metallurgical Grade Alumina can be used to polish germanium.
Since it is obvious that many changes and modifications can be made without departing from the nature and spirit of the invention, it is to be understood that the invention is not limited to the above description except as set forth in the appended claims.
What is claimed is:
1. A reagent slurry for surface polishing a semiconductor consisting essentially of from 8 to 20% by weight of a member of the group consisting of the tetrasodium salt of ethylene diamine tetra acetic acid, sodium fluoride and mannitol; 1 to 10% by weight of a member of the group consisting of hydrogen peroxide and potassium nitrate; a carrying agent selected from the group consisting of water and a water and glycerine mixture; and from 3 4 20 to 80 g./250 ml. of slurry of a hard abrasive selected 2,294,760 9/1942 Morris 51-307 from the group consisting of aluminum oxide, cerium xide 2,683,343 7/ 1954 Gillette et a1 51-304 and diamond dust. 3,103,733 9/1963 Fauro et a] 204143 2. A method of polishing the surface of a semicon- 3,158,517 11/1964 Schwarzenberger 252-793 X ductor comprising applying the composition of claim 1 to 5 3,228,816 1/1966 Kendall 204-140.5 the surface of said semiconductor While maintaining rela- 3,248,235 4/ 1966 Pryor et al 51-304 21;; motion between sa1d semiconductor and said compo- OTHER REFERENCES References Cited Camp, A Study of the Etching Rate of Single-Crystal Germanium, Journal of Electro-Chem. Society, vol. 102, UNITED STATES PATENTS 10 Nov. 10, 1955, pp 1,800,881 4/1931 Andrus et a1. 106-14 2,082,950 6/ 1937 Green 106-14 DONALD J. ARNOLD, Primary Examiner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US451995A US3385682A (en) | 1965-04-29 | 1965-04-29 | Method and reagent for surface polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US451995A US3385682A (en) | 1965-04-29 | 1965-04-29 | Method and reagent for surface polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3385682A true US3385682A (en) | 1968-05-28 |
Family
ID=23794568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US451995A Expired - Lifetime US3385682A (en) | 1965-04-29 | 1965-04-29 | Method and reagent for surface polishing |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US3385682A (en) |
Cited By (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3491491A (en) * | 1968-01-15 | 1970-01-27 | Us Industries Inc | Aluminous slurries containing ferric ammonium citrate |
| US3549342A (en) * | 1967-12-01 | 1970-12-22 | Kempten Elektroschmelz Gmbh | Method of making abrasives for grinding tools |
| FR2216077A1 (en) * | 1973-02-02 | 1974-08-30 | Wacker Chemitronic | |
| DE2653901A1 (en) * | 1975-12-05 | 1977-06-08 | Ibm | POLISHING COMPOUND AND METHOD FOR SEMICONDUCTOR SUBSTRATE |
| US4239501A (en) * | 1978-03-07 | 1980-12-16 | Wirth John C | Method for preserving the grinding characteristics of a grinding tool |
| EP0022960A1 (en) * | 1979-07-05 | 1981-01-28 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH | Process for producing superficial piling-up defects in semiconductor wafers |
| US4305779A (en) * | 1980-05-28 | 1981-12-15 | The United States Of America As Represented By The United States Department Of Energy | Method of polishing nickel-base alloys and stainless steels |
| JPS577307U (en) * | 1980-06-16 | 1982-01-14 | ||
| US4640713A (en) * | 1984-11-19 | 1987-02-03 | S. C. Johnson & Son, Inc. | Tarnish remover/metal polish formulation comprising a metal iodide, an acid, and water |
| US5123958A (en) * | 1990-05-25 | 1992-06-23 | Wiand Ronald C | Polishing composition and method |
| US5462568A (en) * | 1992-03-13 | 1995-10-31 | Ronald C. Wiand | Stone polishing composition |
| EP0706582A1 (en) † | 1993-05-26 | 1996-04-17 | Rodel, Inc. | Improved compositions and methods for polishing |
| US5575837A (en) * | 1993-04-28 | 1996-11-19 | Fujimi Incorporated | Polishing composition |
| WO1997047030A1 (en) * | 1996-06-06 | 1997-12-11 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
| WO1998004646A1 (en) * | 1996-07-25 | 1998-02-05 | Ekc Technology, Inc. | Chemical mechanical polishing composition and process |
| US5726099A (en) * | 1995-11-07 | 1998-03-10 | International Business Machines Corporation | Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry |
| WO1998013536A1 (en) * | 1996-09-24 | 1998-04-02 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| WO1998026025A1 (en) * | 1996-12-09 | 1998-06-18 | Cabot Corporation | Chemical mechanical polishing copper substrates |
| US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US5968239A (en) * | 1996-11-12 | 1999-10-19 | Kabushiki Kaisha Toshiba | Polishing slurry |
| US6015506A (en) * | 1996-11-26 | 2000-01-18 | Cabot Corporation | Composition and method for polishing rigid disks |
| US6027997A (en) * | 1994-03-04 | 2000-02-22 | Motorola, Inc. | Method for chemical mechanical polishing a semiconductor device using slurry |
| US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6083419A (en) * | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
| US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6149696A (en) * | 1997-11-06 | 2000-11-21 | Komag, Inc. | Colloidal silica slurry for NiP plated disk polishing |
| US6159076A (en) * | 1998-05-28 | 2000-12-12 | Komag, Inc. | Slurry comprising a ligand or chelating agent for polishing a surface |
| US6217416B1 (en) | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
| US6383065B1 (en) | 2001-01-22 | 2002-05-07 | Cabot Microelectronics Corporation | Catalytic reactive pad for metal CMP |
| US6432828B2 (en) | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6461227B1 (en) | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
| US20030164471A1 (en) * | 2001-12-12 | 2003-09-04 | Ekc Technology, Inc. | Compositions for chemical mechanical planarization of copper |
| US6638326B2 (en) | 2001-09-25 | 2003-10-28 | Ekc Technology, Inc. | Compositions for chemical mechanical planarization of tantalum and tantalum nitride |
| US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
| US20040140288A1 (en) * | 1996-07-25 | 2004-07-22 | Bakul Patel | Wet etch of titanium-tungsten film |
| US20050045852A1 (en) * | 2003-08-29 | 2005-03-03 | Ameen Joseph G. | Particle-free polishing fluid for nickel-based coating planarization |
| US20050072524A1 (en) * | 2000-04-11 | 2005-04-07 | Cabot Microelectronics Corporation | System for the preferential removal of silicon oxide |
| EP2554613A1 (en) * | 2011-08-01 | 2013-02-06 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound |
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| US1800881A (en) * | 1928-09-15 | 1931-04-14 | Smith Corp A O | Corrosion-retarding compound and process of making the same |
| US2082950A (en) * | 1932-01-21 | 1937-06-08 | Parker Rust Proof Co | Coating zinc and the coated article |
| US2294760A (en) * | 1940-01-12 | 1942-09-01 | Poor & Co | Process for coating metal surfaces |
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| US3158517A (en) * | 1959-11-05 | 1964-11-24 | Telefunken Gmbh | Process for forming recesses in semiconductor bodies |
| US3228816A (en) * | 1962-02-21 | 1966-01-11 | Rohr Corp | Process and composition for cleaning and polishing aluminum and its alloys |
| US3248235A (en) * | 1961-09-28 | 1966-04-26 | Minnesota Mining & Mfg | Anti-tarnish composition for coppercontaining surfaces |
-
1965
- 1965-04-29 US US451995A patent/US3385682A/en not_active Expired - Lifetime
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1800881A (en) * | 1928-09-15 | 1931-04-14 | Smith Corp A O | Corrosion-retarding compound and process of making the same |
| US2082950A (en) * | 1932-01-21 | 1937-06-08 | Parker Rust Proof Co | Coating zinc and the coated article |
| US2294760A (en) * | 1940-01-12 | 1942-09-01 | Poor & Co | Process for coating metal surfaces |
| US2683343A (en) * | 1952-11-15 | 1954-07-13 | Gen Motors Corp | Tumbling process |
| US3103733A (en) * | 1958-08-19 | 1963-09-17 | Clevite Corp | Treatment of germanium semiconductor devices |
| US3158517A (en) * | 1959-11-05 | 1964-11-24 | Telefunken Gmbh | Process for forming recesses in semiconductor bodies |
| US3248235A (en) * | 1961-09-28 | 1966-04-26 | Minnesota Mining & Mfg | Anti-tarnish composition for coppercontaining surfaces |
| US3228816A (en) * | 1962-02-21 | 1966-01-11 | Rohr Corp | Process and composition for cleaning and polishing aluminum and its alloys |
Cited By (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3549342A (en) * | 1967-12-01 | 1970-12-22 | Kempten Elektroschmelz Gmbh | Method of making abrasives for grinding tools |
| US3491491A (en) * | 1968-01-15 | 1970-01-27 | Us Industries Inc | Aluminous slurries containing ferric ammonium citrate |
| FR2216077A1 (en) * | 1973-02-02 | 1974-08-30 | Wacker Chemitronic | |
| DE2653901A1 (en) * | 1975-12-05 | 1977-06-08 | Ibm | POLISHING COMPOUND AND METHOD FOR SEMICONDUCTOR SUBSTRATE |
| US4239501A (en) * | 1978-03-07 | 1980-12-16 | Wirth John C | Method for preserving the grinding characteristics of a grinding tool |
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