US3385682A - Method and reagent for surface polishing - Google Patents

Method and reagent for surface polishing Download PDF

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US3385682A
US3385682A US45199565A US3385682A US 3385682 A US3385682 A US 3385682A US 45199565 A US45199565 A US 45199565A US 3385682 A US3385682 A US 3385682A
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reagent
polishing
surface
slurry
method
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Lowen Jack
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Sprague Electric Co
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Sprague Electric Co
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Description

United States Patent 3,385,682 METHOD AND REAGENT FOR SURFACE POLISHING Jack Lowen, Williamstown, Mass, assignor to Sprague Electric Company, North Adams, Mass 'a corporation of Massachusetts No Drawing. Filed Apr. 29, 1965, Ser. No. 451,995

2 Claims. (Cl. 51293) ABSTRACT OF THE DISCLOSURE A semiconductor polishing composition and process comprising applying to a semiconductor a carrying agent, a complexing agent, an oxidizing agent, and an abrasive material.

This invention relates to a meth d and reagent for polishing and preparing semiconductors, metals, and other materials for use in the electronics industry.

Semiconductors or other materials used in the electronics industry must have a smooth surface to effectively operate in their intended manner particularly in the latest planar structures. At present, many methods involving mechanical polishing or chemical polishing are employed with varying degrees of success to obtain the desired surface smoothness. These methods, however, are usually either too time consuming or too ineflicient or yield surfaces marked by viscous fluid flow patterns.

An object of this invention is to provide a method and reagent for effectively polishing and preparing the surface of semiconductor crystals, combining the advantages of chemical and mechanical polishing.

In general, the reagent used in the method of this invention includes a c mplexing agent that can chelate with the material being polished, an oxidizing agent that can react with the material and an abrasive powder which are incorporated in a slurry using water or other media as a carrying agent. The slurry is applied to the material in a mechanical polisher such as Bausch & Lomb No. 2l-1l86 enclosed in an air-tight box under a positive pressure of filtered air or inert gas such as nitrogen. A Sterilshield enclosure made by Baker is particularly effective.

The mechanical polisher used can be any standard mechanical polisher such as Bausch & Lomb No. 21-11-86 or Buehler Polishers or the new vibromatics put out by Fisher or Buehler. Prior to the polishing procedure a lapping schedule to remove all deformation caused by slicing or machining is essential. Regardless of how carefully the mechanical polishing operations are carried out, some surface deformation will remain. The incorporation of an active reagent to react with the material and a complexing agent to hold it in solution along with the usual abrasive slurry has a number of important advantages over either mechanical or chemical polishing:

(1) It is faster than mechanical polishing. Using Versene and peroxide reduces the time necessary to pOlish silicon from about four hours to about one and one-half hours.

(2) Since the action is chemical as well as mechanical, the material abraded from the specimen reacts with the reagent and does not fill in scratches and imperfecti ns on the surface as in mechanical polishing. A polished surface as produced by this method will have less surface damage than a mechanically polished surface.

(3) Since the action is mechanical as well as chemical, the sample is not marked by swirling patterns of hydraulic flow and the edges are not rounded to any significant dimension. The solutions used are not as corrosive or toxic and therefore safer for routine use.

The reagent of this invention is particularly effective 3,385,682 Patented May 28, 1968 for polishing silicon, gallium-arsenide, germanium, and other semiconductors. The reagent or slurry of this invention attacks the surface to increase the rate of polishing, and dissolves the particles abraded from the material being polished to reduce abrasion and surface damage. Ordinarily, the polishing involves a surface smearing or film to cover and fill in surface damage. The slurry of this invention dissolves this film and produces a comparatively damage free surface.

The complexing agent used in the slurry may advantageously be selected from the following group:

Versene chloride fluoride citrate tartrate cyanide oxalate mannitol The oxidizing agent used in the slurry may advantageously be selected from the following group:

peroxide nitrate perchlorate persulfate (a) complexing agent, 8 to 20% by weight (b) oxidizing agent, 1 to 10% by weight (c) abrasive, 20 to -g./250 ml. of slurry The following are examples of specific applications of this invention:

Example 1 Silicon or gallium arsenide is used as the semic nductor. The slurry contains the following components: one pound Versene (the tetrasodium salt of ethylene diamine tetra acetic acid) per gal. of H 0; approximately 3% of H 0 i.e. 2030 cc. of 30% per 250 ml. charge of slurry and 50-60 g. of Linde metallurgical Grade High Purity Alumina Abrasive.

Example 2.

Silicon is polished using 10 g. NaF, 5 g. NaOH, 50 ml. H 0 g. of Linde Metallurgical Grade Alumina and 25 ml. glycerine in 425 ml. H O.

It is to be understood that the invention is not limited to the specific examples indicated above. For example, 5% KNO 5% KCl and 10% mannitol in a slurry containing 20% of Linde Metallurgical Grade Alumina can be used to polish germanium.

Since it is obvious that many changes and modifications can be made without departing from the nature and spirit of the invention, it is to be understood that the invention is not limited to the above description except as set forth in the appended claims.

What is claimed is:

1. A reagent slurry for surface polishing a semiconductor consisting essentially of from 8 to 20% by weight of a member of the group consisting of the tetrasodium salt of ethylene diamine tetra acetic acid, sodium fluoride and mannitol; 1 to 10% by weight of a member of the group consisting of hydrogen peroxide and potassium nitrate; a carrying agent selected from the group consisting of water and a water and glycerine mixture; and from 3 4 20 to 80 g./250 ml. of slurry of a hard abrasive selected 2,294,760 9/1942 Morris 51-307 from the group consisting of aluminum oxide, cerium xide 2,683,343 7/ 1954 Gillette et a1 51-304 and diamond dust. 3,103,733 9/1963 Fauro et a] 204143 2. A method of polishing the surface of a semicon- 3,158,517 11/1964 Schwarzenberger 252-793 X ductor comprising applying the composition of claim 1 to 5 3,228,816 1/1966 Kendall 204-140.5 the surface of said semiconductor While maintaining rela- 3,248,235 4/ 1966 Pryor et al 51-304 21;; motion between sa1d semiconductor and said compo- OTHER REFERENCES References Cited Camp, A Study of the Etching Rate of Single-Crystal Germanium, Journal of Electro-Chem. Society, vol. 102, UNITED STATES PATENTS 10 Nov. 10, 1955, pp 1,800,881 4/1931 Andrus et a1. 106-14 2,082,950 6/ 1937 Green 106-14 DONALD J. ARNOLD, Primary Examiner.

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Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491491A (en) * 1968-01-15 1970-01-27 Us Industries Inc Aluminous slurries containing ferric ammonium citrate
US3549342A (en) * 1967-12-01 1970-12-22 Kempten Elektroschmelz Gmbh Method of making abrasives for grinding tools
FR2216077A1 (en) * 1973-02-02 1974-08-30 Wacker Chemitronic
DE2653901A1 (en) * 1975-12-05 1977-06-08 Ibm Polishing mixture and processes for semiconductor substrates
US4239501A (en) * 1978-03-07 1980-12-16 Wirth John C Method for preserving the grinding characteristics of a grinding tool
EP0022960A1 (en) * 1979-07-05 1981-01-28 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH Process for producing superficial piling-up defects in semiconductor wafers
US4305779A (en) * 1980-05-28 1981-12-15 The United States Of America As Represented By The United States Department Of Energy Method of polishing nickel-base alloys and stainless steels
JPS577307U (en) * 1980-06-16 1982-01-14
US4640713A (en) * 1984-11-19 1987-02-03 S. C. Johnson & Son, Inc. Tarnish remover/metal polish formulation comprising a metal iodide, an acid, and water
US5123958A (en) * 1990-05-25 1992-06-23 Wiand Ronald C Polishing composition and method
US5462568A (en) * 1992-03-13 1995-10-31 Ronald C. Wiand Stone polishing composition
EP0706582A1 (en) 1993-05-26 1996-04-17 Rodel, Inc. Improved compositions and methods for polishing
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
WO1997047030A1 (en) * 1996-06-06 1997-12-11 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
WO1998004646A1 (en) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5726099A (en) * 1995-11-07 1998-03-10 International Business Machines Corporation Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry
WO1998013536A1 (en) * 1996-09-24 1998-04-02 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
WO1998026025A1 (en) * 1996-12-09 1998-06-18 Cabot Corporation Chemical mechanical polishing copper substrates
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US5968239A (en) * 1996-11-12 1999-10-19 Kabushiki Kaisha Toshiba Polishing slurry
US6015506A (en) * 1996-11-26 2000-01-18 Cabot Corporation Composition and method for polishing rigid disks
US6027997A (en) * 1994-03-04 2000-02-22 Motorola, Inc. Method for chemical mechanical polishing a semiconductor device using slurry
US6033596A (en) * 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6149696A (en) * 1997-11-06 2000-11-21 Komag, Inc. Colloidal silica slurry for NiP plated disk polishing
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US6217416B1 (en) 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
US6383065B1 (en) 2001-01-22 2002-05-07 Cabot Microelectronics Corporation Catalytic reactive pad for metal CMP
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6461227B1 (en) 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
US20030164471A1 (en) * 2001-12-12 2003-09-04 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
US6638326B2 (en) 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US20040140288A1 (en) * 1996-07-25 2004-07-22 Bakul Patel Wet etch of titanium-tungsten film
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
US20050072524A1 (en) * 2000-04-11 2005-04-07 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide
EP2554613A1 (en) * 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1800881A (en) * 1928-09-15 1931-04-14 Smith Corp A O Corrosion-retarding compound and process of making the same
US2082950A (en) * 1932-01-21 1937-06-08 Parker Rust Proof Co Coating zinc and the coated article
US2294760A (en) * 1940-01-12 1942-09-01 Poor & Co Process for coating metal surfaces
US2683343A (en) * 1952-11-15 1954-07-13 Gen Motors Corp Tumbling process
US3103733A (en) * 1958-08-19 1963-09-17 Clevite Corp Treatment of germanium semiconductor devices
US3158517A (en) * 1959-11-05 1964-11-24 Telefunken Gmbh Process for forming recesses in semiconductor bodies
US3228816A (en) * 1962-02-21 1966-01-11 Rohr Corp Process and composition for cleaning and polishing aluminum and its alloys
US3248235A (en) * 1961-09-28 1966-04-26 Minnesota Mining & Mfg Anti-tarnish composition for coppercontaining surfaces

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1800881A (en) * 1928-09-15 1931-04-14 Smith Corp A O Corrosion-retarding compound and process of making the same
US2082950A (en) * 1932-01-21 1937-06-08 Parker Rust Proof Co Coating zinc and the coated article
US2294760A (en) * 1940-01-12 1942-09-01 Poor & Co Process for coating metal surfaces
US2683343A (en) * 1952-11-15 1954-07-13 Gen Motors Corp Tumbling process
US3103733A (en) * 1958-08-19 1963-09-17 Clevite Corp Treatment of germanium semiconductor devices
US3158517A (en) * 1959-11-05 1964-11-24 Telefunken Gmbh Process for forming recesses in semiconductor bodies
US3248235A (en) * 1961-09-28 1966-04-26 Minnesota Mining & Mfg Anti-tarnish composition for coppercontaining surfaces
US3228816A (en) * 1962-02-21 1966-01-11 Rohr Corp Process and composition for cleaning and polishing aluminum and its alloys

Cited By (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3549342A (en) * 1967-12-01 1970-12-22 Kempten Elektroschmelz Gmbh Method of making abrasives for grinding tools
US3491491A (en) * 1968-01-15 1970-01-27 Us Industries Inc Aluminous slurries containing ferric ammonium citrate
FR2216077A1 (en) * 1973-02-02 1974-08-30 Wacker Chemitronic
DE2653901A1 (en) * 1975-12-05 1977-06-08 Ibm Polishing mixture and processes for semiconductor substrates
US4239501A (en) * 1978-03-07 1980-12-16 Wirth John C Method for preserving the grinding characteristics of a grinding tool
US5133160A (en) * 1979-07-05 1992-07-28 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe M.B.H. Process for the removal of specific crystal structures defects from semiconductor discs
EP0022960A1 (en) * 1979-07-05 1981-01-28 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH Process for producing superficial piling-up defects in semiconductor wafers
US4305779A (en) * 1980-05-28 1981-12-15 The United States Of America As Represented By The United States Department Of Energy Method of polishing nickel-base alloys and stainless steels
JPS577307U (en) * 1980-06-16 1982-01-14
JPS628732Y2 (en) * 1980-06-16 1987-02-28
US4640713A (en) * 1984-11-19 1987-02-03 S. C. Johnson & Son, Inc. Tarnish remover/metal polish formulation comprising a metal iodide, an acid, and water
US5123958A (en) * 1990-05-25 1992-06-23 Wiand Ronald C Polishing composition and method
US5462568A (en) * 1992-03-13 1995-10-31 Ronald C. Wiand Stone polishing composition
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
EP0706582A1 (en) 1993-05-26 1996-04-17 Rodel, Inc. Improved compositions and methods for polishing
EP0706582B2 (en) 1993-05-26 2004-03-17 Rodel, Inc. Improved compositions and methods for polishing
US6027997A (en) * 1994-03-04 2000-02-22 Motorola, Inc. Method for chemical mechanical polishing a semiconductor device using slurry
US5726099A (en) * 1995-11-07 1998-03-10 International Business Machines Corporation Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
WO1997047030A1 (en) * 1996-06-06 1997-12-11 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US7314823B2 (en) 1996-07-25 2008-01-01 Dupont Airproducts Nanomaterials Llc Chemical mechanical polishing composition and process
US6635186B1 (en) 1996-07-25 2003-10-21 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US6313039B1 (en) 1996-07-25 2001-11-06 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US20040134873A1 (en) * 1996-07-25 2004-07-15 Li Yao Abrasive-free chemical mechanical polishing composition and polishing process containing same
US20040140288A1 (en) * 1996-07-25 2004-07-22 Bakul Patel Wet etch of titanium-tungsten film
US20050266689A1 (en) * 1996-07-25 2005-12-01 Small Robert J Chemical mechanical polishing composition and process
WO1998004646A1 (en) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US6117783A (en) * 1996-07-25 2000-09-12 Ekc Technology, Inc. Chemical mechanical polishing composition and process
WO1998013536A1 (en) * 1996-09-24 1998-04-02 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US6316366B1 (en) 1996-09-24 2001-11-13 Cabot Microelectronics Corporation Method of polishing using multi-oxidizer slurry
US6033596A (en) * 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5968239A (en) * 1996-11-12 1999-10-19 Kabushiki Kaisha Toshiba Polishing slurry
US6015506A (en) * 1996-11-26 2000-01-18 Cabot Corporation Composition and method for polishing rigid disks
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6569350B2 (en) 1996-12-09 2003-05-27 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6593239B2 (en) 1996-12-09 2003-07-15 Cabot Microelectronics Corp. Chemical mechanical polishing method useful for copper substrates
WO1998026025A1 (en) * 1996-12-09 1998-06-18 Cabot Corporation Chemical mechanical polishing copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6136711A (en) * 1997-07-28 2000-10-24 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6149696A (en) * 1997-11-06 2000-11-21 Komag, Inc. Colloidal silica slurry for NiP plated disk polishing
US20040009671A1 (en) * 1998-03-18 2004-01-15 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US7381648B2 (en) 1998-03-18 2008-06-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6620037B2 (en) 1998-03-18 2003-09-16 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6432828B2 (en) 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US6217416B1 (en) 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
US7365013B2 (en) 2000-04-11 2008-04-29 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide
US20050072524A1 (en) * 2000-04-11 2005-04-07 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide
US7238618B2 (en) 2000-04-11 2007-07-03 Cabot Microelectronics Corporation System for the preferential removal of silicon oxide
US20070120090A1 (en) * 2000-04-11 2007-05-31 Cabot Microelectronics Corporation System for the Preferential Removal of Silicon Oxide
US6461227B1 (en) 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
US6383065B1 (en) 2001-01-22 2002-05-07 Cabot Microelectronics Corporation Catalytic reactive pad for metal CMP
US6638326B2 (en) 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US7033409B2 (en) 2001-09-25 2006-04-25 Dananomaterials Llc Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US20050250329A1 (en) * 2001-09-25 2005-11-10 Ekc Technology Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US20030164471A1 (en) * 2001-12-12 2003-09-04 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
US6866792B2 (en) 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
US20050045852A1 (en) * 2003-08-29 2005-03-03 Ameen Joseph G. Particle-free polishing fluid for nickel-based coating planarization
EP2554613A1 (en) * 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound

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