CN113150741A - Chemical mechanical polishing slurry suitable for high-hardness single crystal chip - Google Patents
Chemical mechanical polishing slurry suitable for high-hardness single crystal chip Download PDFInfo
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- CN113150741A CN113150741A CN202110125316.3A CN202110125316A CN113150741A CN 113150741 A CN113150741 A CN 113150741A CN 202110125316 A CN202110125316 A CN 202110125316A CN 113150741 A CN113150741 A CN 113150741A
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- 238000005498 polishing Methods 0.000 title claims abstract description 59
- 239000002002 slurry Substances 0.000 title claims abstract description 55
- 239000013078 crystal Substances 0.000 title claims abstract description 16
- 239000000126 substance Substances 0.000 title claims abstract description 15
- 238000000227 grinding Methods 0.000 claims abstract description 35
- 239000007800 oxidant agent Substances 0.000 claims abstract description 30
- 239000000843 powder Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 230000001590 oxidative effect Effects 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 239000000839 emulsion Substances 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 10
- 239000012498 ultrapure water Substances 0.000 claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims description 12
- 239000012286 potassium permanganate Substances 0.000 claims description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 229940117975 chromium trioxide Drugs 0.000 claims description 7
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052580 B4C Inorganic materials 0.000 claims description 4
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 30
- 239000000463 material Substances 0.000 abstract description 26
- 238000002156 mixing Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000003756 stirring Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229910000423 chromium oxide Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910019093 NaOCl Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000013461 intermediate chemical Substances 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention relates to a chemical mechanical polishing slurry suitable for a high-hardness single crystal chip, which utilizes silicon dioxide emulsion (CS) and ultrapure water (DIW) which are easy to obtain in commercial market as base materials, and then respectively adds grinding powder, an oxidant and an etchant. The whole formula is completed only by mixing all the materials according to the formula amount and uniformly stirring, and the preparation process is simple. The selection of materials such as grinding powder, an oxidant, an etchant and the like is common source materials, the source material cost is low, and the requirement on equipment is low. The main key point is that the invention optimizes the proportion of various materials and prepares the chemical mechanical grinding polishing slurry with low cost and good effect.
Description
Technical Field
The invention relates to the field of semiconductor chip manufacturing, in particular to chemical mechanical polishing slurry suitable for a high-hardness single crystal chip.
Background
In the field of single crystal chip manufacturing, the main purpose of grinding and polishing is to reduce the material and improve the surface quality. Generally, the pure mechanical grinding process equipment and materials are simple, and the grinding and thinning efficiency is high without the requirement of other surfaces (scratch density and roughness); however, the effect is not good at high surface requirements. The pure chemical etching method can achieve a relatively good surface quality (scratch density, roughness), but the polishing and thinning efficiency is low. Thus, the intermediate Chemical Mechanical Polishing (CMP) process becomes a single chip best suited for high hardness; such as crystal substrate of silicon carbide, aluminum oxide, gallium nitride, aluminum nitride, diamond, silicon, etc. Polishing in Chemical Mechanical Polishing (CMP) processes is highly dependent on the abrasive slurry, and new research is constantly being conducted in recent years to find new materials and methods suitable for abrasive slurries.
The existing grinding slurry applied to the high-hardness single crystal substrate is mainly composed of silicon dioxide emulsion, and the pH value is between pH7 and pH10, although the surface quality or grinding efficiency of the grinding slurry is improved compared with pure mechanical grinding or pure chemical etching grinding, the problems of poor crystal surface polishing capability and increased time of the polishing process still exist. In addition, the abrasive formulations of the above-described panels present some difficulties in removing the scratch layer and surface damage from the substrate surface, and the problem is that the local etching chemistry increases the scratch layer and surface damage.
In view of the above, the present invention is made by the following detailed description of the problems of the conventional polishing slurry.
Disclosure of Invention
The invention aims to provide chemical mechanical polishing slurry suitable for high-hardness single crystal chips, so as to effectively remove scratches and surface damage layers and improve the removal rate.
In order to achieve the purpose, the invention adopts the technical scheme that;
a chemical mechanical polishing slurry suitable for a high-hardness single crystal chip comprises ultrapure water, emulsion silicon dioxide, grinding powder, an oxidant and an etchant;
the ultrapure water and the emulsion silicon dioxide account for 1-99wt% of the total weight of the slurry; the grinding powder accounts for less than 0.1 to 50 weight percent of the total weight of the slurry, the oxidant and the etching agent account for less than 0.1 to 50 weight percent of the total weight of the slurry, and the grinding powder, the oxidant and the etching agent account for less than 0.1 to 90 weight percent of the total weight of the slurry;
the grinding slurry has a Knoop hardness of more than 800kg/mm2Less than 8000kg/mm2(ii) a The electrochemical potential of the oxidant is not less than 1.
The grinding powder is alumina, zirconia, silicon carbide, boron carbide, diamond powder or cubic boron nitride, and the particle size of the particles is 0.0005-30 mu m.
The oxidant is one or more of sodium hypochlorite, hydrogen peroxide, sodium carbonate, potassium permanganate, hydrofluoric acid, nitric acid, chromic oxide and trichlorodicyan.
The etchant is one or more of potassium hydroxide, chromium trioxide, sodium hydroxide, hydrofluoric acid, nitric acid and potassium permanganate.
After the scheme is adopted, the silicon dioxide emulsion and the ultrapure water which are easy to obtain in the commercial market are used as basic materials, and then grinding powder, an oxidant and an etchant are respectively added. The whole formula is completed only by mixing all the materials according to the formula amount and uniformly stirring, and the preparation process is simple. The selection of materials such as grinding powder, an oxidant, an etchant and the like is common source materials, the source material cost is low, and the requirement on equipment is low. The main key point is that the invention optimizes the proportion of various materials and prepares the chemical mechanical grinding polishing slurry with low cost and good effect.
Drawings
FIG. 1 is a graph comparing the polishing effect of polishing slurries obtained with different contents of alumina on silicon carbide chips;
FIG. 2 is a graph showing the polishing effect of the abrasive slurry of example 1 on a silicon carbide wafer;
FIG. 3 is a graph showing the polishing effect of the abrasive slurry of example 5 on a silicon carbide wafer;
FIG. 4 is a graph showing the polishing effect of abrasive slurries containing different oxidizing agents on silicon carbide chips;
FIG. 5 is a graph showing the polishing effect of the abrasive slurry of example 6 on a silicon carbide wafer;
FIG. 6 is a graph showing the polishing effect of the abrasive slurry of example 7 on a silicon carbide wafer;
FIG. 7 is a graph showing the polishing effect of the abrasive slurry of example 8 on a silicon carbide wafer;
FIG. 8 is a graph showing the polishing effect of polishing slurries containing different etchants;
FIG. 9 is a graph showing the polishing effect of the polishing slurry of example 12 on a silicon carbide wafer;
FIG. 10 is a graph showing the polishing effect of the polishing slurry of example 14 on a silicon carbide wafer.
Detailed Description
The invention discloses chemical mechanical polishing slurry suitable for a high-hardness single crystal chip, which comprises ultrapure water, emulsion silicon dioxide, grinding powder, an oxidant and an etchant;
the ultrapure water and the emulsion silicon dioxide account for 1-99wt% of the total weight of the slurry; the grinding powder accounts for less than 0.1 to 50 weight percent of the total weight of the slurry, the oxidant and the etching agent account for less than 0.1 to 50 weight percent of the total weight of the slurry, and the grinding powder, the oxidant and the etching agent account for less than 0.1 to 90 weight percent of the total weight of the slurry;
the Knoop hardness of the grinding slurry is greater than 800kg/mm2 and less than 8000kg/mm2 (the mechanical hardness value is greater than that of the emulsion silicon dioxide and less than that of the diamond); the pH value of the oxidant and the etchant is lower than 14, and the electrochemical potential of the oxidant is not less than 1.
The grinding powder can be alumina Al2O3, zirconia ZrO2, silicon carbide SiC, boron carbide B4C, diamond powder or cubic boron nitride cBN, and the particle size of the particles is 0.0005-30 mu m.
The oxidizing agent is one or more of sodium hypochlorite (NaOCl), hydrogen peroxide (H2O2), sodium carbonate (2Na2CO 3.3H 2O2), potassium permanganate (KMnO4), hydrofluoric acid (HF), nitric acid (HNO3), chromium oxide (CrO3), and trichlorodicyanic acid (C3Cl3N3O3), and if composed of a plurality of components, the amount of each component is not particularly limited as long as the total amount thereof satisfies the above-mentioned ratio requirements.
The etching solution is one or more of potassium hydroxide (KOH), chromium trioxide (CrO3), sodium hydroxide (NaOH), hydrofluoric acid (HF), nitric acid (HNO3), and potassium permanganate (KMnO 4). If the etching solution is composed of a plurality of components, the amount of each component is not particularly limited as long as the total amount thereof satisfies the above-mentioned ratio requirements.
In order to elaborate the technical solution of the present invention and the achieved effect, a plurality of embodiments will be described in detail below.
The grinding powder adopted in the grinding slurry formula has the hardness requirement of being larger than that of emulsion silicon dioxide (Knoop hardness: 800kg/mm2) and smaller than that of diamond (Knoop hardness: 8000kg/mm2), and the ideal Knoop hardness is about 2500kg/mm2, and the materials meeting the requirement comprise aluminum oxide (Al2O3) and zirconium oxide (ZrO2), and the particle size is 0.0005-30 mu m. In the following, 5 examples are described, in which the amounts of ultrapure water, latex silica, curing agent and etchant are the same, except that the abrasive powder is specifically used in the material, particle size and amount shown in Table 1.
TABLE 1
FIG. 1 shows the polishing effect (from left to right, polishing rate, scratch density and surface roughness) of polishing slurries obtained with different contents of alumina on silicon carbide chips, wherein three points from left to right correspond to examples 3, 4 and 5, respectively. As can be seen from the figure, alumina (Al)2O3) The amount of addition is increased, the grinding rate is increased with increasing, but excess alumina (Al)2O3) Doping causes scratching and increases roughness, so that implementation 5, in turn, achieves the best surface quality at an increased polishing rate.
The polishing effects of the polishing slurries of examples 1, 2 and 5 on the silicon carbide surface are shown in table 2. From table 2, it can be understood that the effect of example 5 is the best.
TABLE 2
Fig. 2 and 3 are graphs showing the polishing effects of the abrasive slurries of examples 1 and 5 on silicon carbide chips, respectively. From fig. 2 and 3, the results of example 5 are better than those of example, as measured from atomic force microscope observation.
In general, the polishing effect of the alumina powder of 400nm was better than that of the zirconia powder of 200nm, and the polishing effect was not in a positive relationship with the proportion of the abrasive powder, and the scratch density was increased by the excessive proportion of the abrasive powder.
The pH of the oxidizing agent used in the formulation of the polishing slurry of the present invention is less than 14, while suitable oxidizing agents possess a relatively high electrochemical potential (E0), as shown in table 3; the electrochemical potential of the oxidant is no less than 1V. Materials meeting this condition include sodium hypochlorite (NaOCl), hydrogen peroxide (H2O2), sodium carbonate (2Na2CO 3.3H 2O2), potassium permanganate (KMnO4), hydrofluoric acid (HF), nitric acid (HNO3), chromium trioxide (CrO3), and trichlorodicyanic acid (C3Cl3N3O3) or a mixture of the above components. Table 3 is a graph showing the oxidation capacity of common reagents.
TABLE 3
Three examples are also provided to illustrate the use of the oxidizing agent, as shown in table 4.
Table 4 the polishing effect on the silicon carbide surface of the abrasive slurries of examples 6 to 8 is shown in table 5.
TABLE 5
FIG. 4 is a graph showing the polishing effect (polishing rate and surface roughness) of polishing slurries containing different oxidizing agents on silicon carbide chips. FIGS. 5 to 7 are graphs showing the polishing effects of the polishing slurries of examples 6 to 8 on silicon carbide chips, respectively. As can be seen from Table 5 and FIGS. 4 to 7, the electrochemical potential of the oxidizing agent is positively correlated with the polishing effect, so that the electrochemical potential of the oxidizing agent is set to 1V or more in the present invention.
The etchant must be for a high hardness single crystal material; such as silicon carbide, aluminum oxide, gallium nitride, aluminum nitride, diamond, silicon, etc., have strong corrosion resistance. Materials meeting this condition are potassium hydroxide (KOH), chromium trioxide (CrO3), sodium hydroxide (NaOH), hydrofluoric acid (HF), nitric acid (HNO3), and potassium permanganate (KMnO4), or a mixture of the foregoing.
In order to explain the polishing effect of the etchant on the polishing slurry, six examples are described below, and the etchant components and contents of the examples are shown in table 6.
TABLE 6
FIG. 8 is a graph showing the polishing effect of polishing slurries containing different etchants (examples 9 to 14), from which it can be seen that potassium hydroxide (KOH) is more effective than chromium trioxide (CrO3), and the best results are obtained in example 12. FIGS. 9 and 10 are graphs showing the polishing effects of the polishing slurries of examples 12 and 14 on silicon carbide chips, respectively, and it can be seen from FIGS. 9 and 10 that the effect of potassium hydroxide (KOH) is better than that of chromium trioxide (CrO 3).
From the above, it can be seen that the ratio of the etching agent is positively correlated with the polishing effect.
The invention uses silicon dioxide emulsion (CS) and ultrapure water (DIW) which are easy to be obtained in the market as base materials, and then grinding powder, oxidant and etchant are respectively added. The whole formula is completed only by mixing all the materials according to the formula amount and uniformly stirring, and the preparation process is simple. The selection of materials such as grinding powder, an oxidant, an etchant and the like is common source materials, the source material cost is low, and the requirement on equipment is low. The main key point is that the invention optimizes the proportion of various materials and prepares the chemical mechanical grinding polishing slurry with low cost and good effect.
The above description is only exemplary of the present invention and is not intended to limit the technical scope of the present invention, so that any minor modifications, equivalent changes and modifications made to the above exemplary embodiments according to the technical spirit of the present invention are within the technical scope of the present invention.
Claims (4)
1. A chemical mechanical polishing slurry suitable for high-hardness single crystal chips is characterized in that: comprises ultrapure water, emulsion silicon dioxide, grinding powder, oxidant and etchant;
the ultrapure water and the emulsion silicon dioxide account for 1-99wt% of the total weight of the slurry; the grinding powder accounts for less than 0.1 to 50 weight percent of the total weight of the slurry, the oxidant and the etching agent account for less than 0.1 to 50 weight percent of the total weight of the slurry, and the grinding powder, the oxidant and the etching agent account for less than 0.1 to 90 weight percent of the total weight of the slurry;
the grinding slurry has a Knoop hardness of more than 800kg/mm2Less than 8000kg/mm2(ii) a The electrochemical potential of the oxidant is not less than 1.
2. The chemical mechanical polishing slurry suitable for high-hardness single crystal chips according to claim 1, wherein: the grinding powder is alumina, zirconia, silicon carbide, boron carbide, diamond powder or cubic boron nitride, and the particle size of the particles is 0.0005-30 ㎛.
3. The chemical mechanical polishing slurry suitable for high-hardness single crystal chips according to claim 1, wherein: the oxidant is one or more of sodium hypochlorite, hydrogen peroxide, sodium carbonate, potassium permanganate, hydrofluoric acid, nitric acid, chromic oxide and trichlorodicyan.
4. The chemical mechanical polishing slurry suitable for high-hardness single crystal chips according to claim 1, wherein: the etchant is one or more of potassium hydroxide, chromium trioxide, sodium hydroxide, hydrofluoric acid, nitric acid and potassium permanganate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113913116A (en) * | 2021-11-11 | 2022-01-11 | 中国电子科技集团公司第二十六研究所 | Polishing solution for polishing germanium single crystal and germanium single crystal polishing method |
| CN115418169A (en) * | 2022-09-27 | 2022-12-02 | 德阳展源新材料科技有限公司 | Silicon dioxide polishing solution for SIC wafer CMP polishing and preparation method thereof |
Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1032021A (en) * | 1988-11-01 | 1989-03-29 | 中国地质大学（北京） | A kind of compound method of kind of polishing fluid with added oxidizing acidic silicasol |
| EP1306415A2 (en) * | 2001-10-26 | 2003-05-02 | Bayer Aktiengesellschaft | Composition for the chemical mechanical polishing of metal- and metal-dielectric structures with a high selectivity |
| CN1640974A (en) * | 2003-12-25 | 2005-07-20 | 福吉米株式会社 | Polishing composition and polishing method |
| CN1693406A (en) * | 2003-12-24 | 2005-11-09 | 美国福吉米股份有限公司 | Polishing composition and polishing method |
| CN102020975A (en) * | 2010-07-21 | 2011-04-20 | 天津晶岭微电子材料有限公司 | Preparation method of magnesium aluminum alloy surface chemically mechanical polishing solution |
| CN102127371A (en) * | 2010-12-16 | 2011-07-20 | 苏州天科合达蓝光半导体有限公司 | Preparation method and use method of polishing solution for silicon carbide |
| CN102516874A (en) * | 2011-11-09 | 2012-06-27 | 大连理工大学 | Polishing liquid for ultra-precision sharpening of diamond cutting tool and preparation method thereof |
| CN103571333A (en) * | 2013-08-20 | 2014-02-12 | 曾锡强 | CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof |
| CN103978406A (en) * | 2014-05-12 | 2014-08-13 | 大连理工大学 | High-efficiency super-smooth chemical mechanical polishing method for lithium niobate crystal |
| CN104178033A (en) * | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | Nano cerium oxide polishing liquid composition |
| CN104403574A (en) * | 2014-12-16 | 2015-03-11 | 河北工业大学 | Compound abrasive polishing solution for sapphire substrate material and recycling method thereof |
| CN104465363A (en) * | 2014-12-16 | 2015-03-25 | 中国电子科技集团公司第四十六研究所 | Silicon carbide single crystal wafer chemico-mechanical polishing method utilizing synthetic resin tin disc |
| CN105647393A (en) * | 2016-02-02 | 2016-06-08 | 北京华进创威电子有限公司 | Polishing solution for silicon carbide wafers |
| CN107109135A (en) * | 2015-04-24 | 2017-08-29 | 三星Sdi株式会社 | For polishing the slurry composition for CMP of copper cash and using its polishing method |
| CN110983340A (en) * | 2019-10-28 | 2020-04-10 | 河北工业大学 | Copper film alkaline polishing solution for low-technology node copper wiring |
-
2021
- 2021-01-29 CN CN202110125316.3A patent/CN113150741A/en active Pending
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1032021A (en) * | 1988-11-01 | 1989-03-29 | 中国地质大学（北京） | A kind of compound method of kind of polishing fluid with added oxidizing acidic silicasol |
| EP1306415A2 (en) * | 2001-10-26 | 2003-05-02 | Bayer Aktiengesellschaft | Composition for the chemical mechanical polishing of metal- and metal-dielectric structures with a high selectivity |
| CN1693406A (en) * | 2003-12-24 | 2005-11-09 | 美国福吉米股份有限公司 | Polishing composition and polishing method |
| CN1640974A (en) * | 2003-12-25 | 2005-07-20 | 福吉米株式会社 | Polishing composition and polishing method |
| CN102020975A (en) * | 2010-07-21 | 2011-04-20 | 天津晶岭微电子材料有限公司 | Preparation method of magnesium aluminum alloy surface chemically mechanical polishing solution |
| CN102127371A (en) * | 2010-12-16 | 2011-07-20 | 苏州天科合达蓝光半导体有限公司 | Preparation method and use method of polishing solution for silicon carbide |
| CN102516874A (en) * | 2011-11-09 | 2012-06-27 | 大连理工大学 | Polishing liquid for ultra-precision sharpening of diamond cutting tool and preparation method thereof |
| CN104178033A (en) * | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | Nano cerium oxide polishing liquid composition |
| CN103571333A (en) * | 2013-08-20 | 2014-02-12 | 曾锡强 | CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof |
| CN103978406A (en) * | 2014-05-12 | 2014-08-13 | 大连理工大学 | High-efficiency super-smooth chemical mechanical polishing method for lithium niobate crystal |
| CN104403574A (en) * | 2014-12-16 | 2015-03-11 | 河北工业大学 | Compound abrasive polishing solution for sapphire substrate material and recycling method thereof |
| CN104465363A (en) * | 2014-12-16 | 2015-03-25 | 中国电子科技集团公司第四十六研究所 | Silicon carbide single crystal wafer chemico-mechanical polishing method utilizing synthetic resin tin disc |
| CN107109135A (en) * | 2015-04-24 | 2017-08-29 | 三星Sdi株式会社 | For polishing the slurry composition for CMP of copper cash and using its polishing method |
| CN105647393A (en) * | 2016-02-02 | 2016-06-08 | 北京华进创威电子有限公司 | Polishing solution for silicon carbide wafers |
| CN110983340A (en) * | 2019-10-28 | 2020-04-10 | 河北工业大学 | Copper film alkaline polishing solution for low-technology node copper wiring |
Non-Patent Citations (4)
| Title |
|---|
| GUOSHUN PAN ET AL.: "Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface", 《J MATER SCI: MATER ELECTRON》 * |
| H.S. LEE ET AL.: "Hybrid polishingmechanismof single crystal SiC usingmixed abrasive slurry(MAS)", 《CIRP ANNALS - MANUFACTURING TECHNOLOGY》 * |
| 王金普等: "硬盘微晶玻璃基板化学机械抛光研究 ", 《人工晶体学报》 * |
| 阎秋生等: "硅溶胶抛光液稳定性及对SiC化学机械抛光的影响 ", 《半导体技术》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113913116A (en) * | 2021-11-11 | 2022-01-11 | 中国电子科技集团公司第二十六研究所 | Polishing solution for polishing germanium single crystal and germanium single crystal polishing method |
| CN115418169A (en) * | 2022-09-27 | 2022-12-02 | 德阳展源新材料科技有限公司 | Silicon dioxide polishing solution for SIC wafer CMP polishing and preparation method thereof |
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