CN101765647B - 用于相变材料的化学-机械抛光的组合物及方法 - Google Patents

用于相变材料的化学-机械抛光的组合物及方法 Download PDF

Info

Publication number
CN101765647B
CN101765647B CN200880100535.9A CN200880100535A CN101765647B CN 101765647 B CN101765647 B CN 101765647B CN 200880100535 A CN200880100535 A CN 200880100535A CN 101765647 B CN101765647 B CN 101765647B
Authority
CN
China
Prior art keywords
cmp
composition
polishing
weight
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200880100535.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN101765647A (zh
Inventor
陈湛
罗凯
罗伯特·瓦卡西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN101765647A publication Critical patent/CN101765647A/zh
Application granted granted Critical
Publication of CN101765647B publication Critical patent/CN101765647B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN200880100535.9A 2007-07-26 2008-07-24 用于相变材料的化学-机械抛光的组合物及方法 Expired - Fee Related CN101765647B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US96210507P 2007-07-26 2007-07-26
US60/962,105 2007-07-26
PCT/US2008/008978 WO2009017652A2 (en) 2007-07-26 2008-07-24 Compositions and methods for chemical-mechanical polishing of phase change materials

Publications (2)

Publication Number Publication Date
CN101765647A CN101765647A (zh) 2010-06-30
CN101765647B true CN101765647B (zh) 2016-05-04

Family

ID=40305111

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880100535.9A Expired - Fee Related CN101765647B (zh) 2007-07-26 2008-07-24 用于相变材料的化学-机械抛光的组合物及方法

Country Status (10)

Country Link
US (1) US20100190339A1 (enExample)
EP (1) EP2183333B1 (enExample)
JP (1) JP5529736B2 (enExample)
KR (1) KR101325455B1 (enExample)
CN (1) CN101765647B (enExample)
IL (1) IL203300A (enExample)
MY (1) MY155239A (enExample)
SG (1) SG183081A1 (enExample)
TW (1) TWI385243B (enExample)
WO (1) WO2009017652A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101765647B (zh) * 2007-07-26 2016-05-04 卡伯特微电子公司 用于相变材料的化学-机械抛光的组合物及方法
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
CN102690604A (zh) * 2011-03-24 2012-09-26 中国科学院上海微系统与信息技术研究所 化学机械抛光液
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8309468B1 (en) 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
RU2605941C2 (ru) * 2011-08-01 2016-12-27 Басф Се СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА Si1-x Gex В ПРИСУТСТВИИ ХМП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ
EP2554612A1 (en) * 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
WO2013130366A1 (en) * 2012-02-27 2013-09-06 Applied Materials, Inc. Feedback control using detection of clearance and adjustment for uniform topography
US20150060400A1 (en) * 2012-04-18 2015-03-05 Fujimi Incorporated Polishing composition
JP2013247341A (ja) 2012-05-29 2013-12-09 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
CN103158057B (zh) * 2013-03-06 2016-02-17 中国科学院上海微系统与信息技术研究所 确定相变材料的化学机械抛光停止点的方法及检测系统
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
CN103484025B (zh) * 2013-09-25 2015-07-08 上海新安纳电子科技有限公司 一种自停止的gst化学机械抛光液及其制备方法和应用
KR102684975B1 (ko) 2019-01-17 2024-07-17 삼성전자주식회사 반도체 소자 및 그 제조 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1737885A (zh) * 2004-08-18 2006-02-22 三星电子株式会社 浆料组合物、制备浆料组合物的方法以及使用浆料组合物抛光物体的方法
CN1738022A (zh) * 2004-08-20 2006-02-22 三星电子株式会社 形成通路结构的方法以及制造具有了该结构的相变存储器件的方法
CN1956208A (zh) * 2005-10-28 2007-05-02 三星电子株式会社 相变存储器件及其操作和制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585963B2 (ja) * 1993-12-10 1997-02-26 日本エクシード株式会社 化合物半導体のための研磨液及びこれを用いた化合物半導体の研磨方法
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6702954B1 (en) * 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
JP2005032855A (ja) * 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法
TWI288046B (en) * 2003-11-14 2007-10-11 Showa Denko Kk Polishing composition and polishing method
KR100615598B1 (ko) * 2004-07-19 2006-08-25 삼성전자주식회사 평탄화 절연막을 갖는 반도체 장치들 및 그 형성방법들
CN1300271C (zh) * 2004-09-24 2007-02-14 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用
US20060216935A1 (en) * 2005-03-28 2006-09-28 Ferro Corporation Composition for oxide CMP in CMOS device fabrication
KR100682948B1 (ko) * 2005-07-08 2007-02-15 삼성전자주식회사 상전이 메모리 소자 및 그 제조방법
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US7691287B2 (en) * 2007-01-31 2010-04-06 Dupont Air Products Nanomaterials Llc Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
US20090001339A1 (en) * 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
KR20090002506A (ko) * 2007-06-29 2009-01-09 제일모직주식회사 상변화 메모리 소자 연마용 ｃｍｐ 슬러리 조성물 및 이를이용한 연마 방법
CN101765647B (zh) * 2007-07-26 2016-05-04 卡伯特微电子公司 用于相变材料的化学-机械抛光的组合物及方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1737885A (zh) * 2004-08-18 2006-02-22 三星电子株式会社 浆料组合物、制备浆料组合物的方法以及使用浆料组合物抛光物体的方法
CN1738022A (zh) * 2004-08-20 2006-02-22 三星电子株式会社 形成通路结构的方法以及制造具有了该结构的相变存储器件的方法
CN1956208A (zh) * 2005-10-28 2007-05-02 三星电子株式会社 相变存储器件及其操作和制造方法

Also Published As

Publication number Publication date
JP5529736B2 (ja) 2014-06-25
KR101325455B1 (ko) 2013-11-04
MY155239A (en) 2015-09-30
TW200907036A (en) 2009-02-16
WO2009017652A3 (en) 2009-04-09
JP2010534934A (ja) 2010-11-11
US20100190339A1 (en) 2010-07-29
KR20100052487A (ko) 2010-05-19
IL203300A (en) 2015-04-30
CN101765647A (zh) 2010-06-30
EP2183333A4 (en) 2010-09-29
TWI385243B (zh) 2013-02-11
EP2183333A2 (en) 2010-05-12
SG183081A1 (en) 2012-08-30
EP2183333B1 (en) 2016-09-07
WO2009017652A2 (en) 2009-02-05

Similar Documents

Publication Publication Date Title
CN101765647B (zh) 用于相变材料的化学-机械抛光的组合物及方法
CN101370897B (zh) 用于相变合金的化学机械抛光的组合物及方法
CN104428386B (zh) 锗‑锑‑碲化学机械抛光浆料
CN111183195B (zh) 用于钨磨光应用的经表面处理的研磨剂颗粒
CN104955914B (zh) 含氧化锆及金属氧化剂的化学机械抛光组合物
EP2035523A1 (en) Compositions and methods for polishing silicon nitride materials
WO2009070239A2 (en) Copper-passivating cmp compositions and methods

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160504

Termination date: 20180724

CF01 Termination of patent right due to non-payment of annual fee