JP2010534934A - 相変化材料を化学的機械的に研磨するための組成物及び方法 - Google Patents
相変化材料を化学的機械的に研磨するための組成物及び方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- G—PHYSICS
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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Abstract
【解決手段】該組成物は、粒子状研磨剤を、リシン、場合により酸化剤、及びそれらの水性キャリヤーとの組合せで含む。該組成物を利用する、相変化材料含有基材を研磨するためのCMP方法も開示される。
【選択図】図1
Description
この実施例は、過酸化水素の存在における、リシンのGST酸化阻害活性を例示する。
この実施例は、電気化学的測定を使用して、過酸化水素の存在におけるリシンのGST酸化阻害活性を例示する。
この実施例は、X線光電子分光法(XPS)を使用して、リシンのGST酸化阻害活性を示す。
この実施例は、本発明のCMP組成物がCMP工程においてGST膜を効果的に除去する能力を例示する。
Claims (22)
- 相変化材料含有基材を研磨するための化学的機械的研磨(CMP)組成物であって、
(a)粒子状研磨剤、
(b)リシン、及び
(c)それらのための水性キャリヤー、
を含む組成物。 - 粒子状研磨剤が約0.001から約6重量パーセントの範囲内の濃度で存在する、請求項1に記載のCMP組成物。
- リシンが、約0.01から約5重量パーセントの範囲内の濃度で存在する、請求項1に記載のCMP組成物。
- 粒子状研磨剤が、コロイダルシリカ、ヒュームドシリカ、及びα−アルミナからなる群から選択される、請求項1に記載のCMP組成物。
- 酸化剤をさらに含む、請求項1に記載のCMP組成物。
- 酸化剤が、約0.01から約6重量パーセントの範囲内の濃度で存在する、請求項5に記載のCMP組成物。
- 酸化剤が、過酸化水素、過硫酸塩、過ヨウ素酸塩及びそれらの塩からなる群から選択される少なくとも1つの酸化剤を含む、請求項5に記載のCMP組成物。
- 酸化剤が過酸化水素を含む、請求項5に記載のCMP組成物。
- 酸化剤の存在下に請求項1のCMP組成物で基材表面を研磨することを含む、相変化材料含有基材を研磨するための化学的機械的研磨(CMP)方法。
- 相変化材料含有基材を研磨するための化学的機械的研磨(CMP)方法であって、
(a)酸化剤の存在下に、基材表面を、研磨パッド並びに、水性キャリヤー、粒子状研磨剤、及びリシンを含む水性CMP組成物と接触させる工程、並びに
(b)研磨パッドと基材との間に相対運動を起こさせて、その間、基材から相変化材料の少なくとも一部を研磨するのに十分な時間、CMP組成物の一部がパッドと基材との間の表面と接触するように保つ工程、
を含む方法。 - 粒子状研磨剤が、組成物中に約0.001から約6重量パーセントの範囲内の濃度で存在する、請求項10に記載のCMP方法。
- リシンが、組成物中に約0.01から約5重量パーセントの範囲内の濃度で存在する、請求項10に記載のCMP方法。
- 粒子状研磨剤が、コロイダルシリカ、ヒュームドシリカ、及びα−アルミナからなる群から選択される、請求項10に記載のCMP方法。
- 酸化剤が、過酸化水素、過硫酸塩、過ヨウ素酸塩、及びそれらの塩からなる群から選択される少なくとも1つの材料を含む、請求項10に記載のCMP方法。
- 酸化剤が過酸化水素を含む、請求項10に記載のCMP方法。
- 酸化剤が、約0.01から約6重量パーセントの範囲内の濃度で存在する、請求項10に記載のCMP方法。
- 基材が、ゲルマニウム−アンチモン−テルル(GST)合金の表面層を含む、請求項10に記載のCMP方法。
- 基材が、表面層の下にライナー材料をさらに含む、請求項17に記載のCMP方法。
- ライナー材料が、Ti、TiN、及びそれらの組合せからなる群から選択される、請求項18に記載のCMP方法。
- 基材が、ライナー材料の下に二酸化ケイ素層をさらに含む、請求項18に記載のCMP方法。
- GST合金及びライナー材料が、各々研磨されて、研磨が二酸化ケイ素層で終了される、請求項20に記載のCMP方法。
- 基材がインジウムアンチモナイト(InS(登録商標)b)を含む、請求項10に記載のCMP方法。
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PCT/US2008/008978 WO2009017652A2 (en) | 2007-07-26 | 2008-07-24 | Compositions and methods for chemical-mechanical polishing of phase change materials |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013047734A1 (ja) * | 2011-09-30 | 2013-04-04 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
WO2013047733A1 (ja) * | 2011-09-30 | 2013-04-04 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
WO2013179718A1 (ja) * | 2012-05-29 | 2013-12-05 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
JP2014225517A (ja) * | 2013-05-15 | 2014-12-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP2015528842A (ja) * | 2012-07-17 | 2015-10-01 | キャボット マイクロエレクトロニクス コーポレイション | Gst用cmpスラリー |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5529736B2 (ja) * | 2007-07-26 | 2014-06-25 | キャボット マイクロエレクトロニクス コーポレイション | 相変化材料を化学的機械的に研磨するための組成物及び方法 |
US8735293B2 (en) * | 2008-11-05 | 2014-05-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
CN102690604A (zh) * | 2011-03-24 | 2012-09-26 | 中国科学院上海微系统与信息技术研究所 | 化学机械抛光液 |
US8790160B2 (en) * | 2011-04-28 | 2014-07-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing phase change alloys |
US8309468B1 (en) | 2011-04-28 | 2012-11-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys |
EP2554612A1 (en) * | 2011-08-01 | 2013-02-06 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5 |
TWI548728B (zh) * | 2011-08-01 | 2016-09-11 | 巴斯夫歐洲公司 | 一種製造半導體裝置的方法,其包含在包含特定有機化合物之CMP組成物的存在下化學機械拋光元素鍺及/或Si1-x Gex材料 |
KR101918800B1 (ko) * | 2012-02-27 | 2018-11-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 균일한 토포그래피를 위해 소거의 검출 및 조절을 이용하는 피드백 제어 |
WO2013157442A1 (ja) * | 2012-04-18 | 2013-10-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
CN103158057B (zh) * | 2013-03-06 | 2016-02-17 | 中国科学院上海微系统与信息技术研究所 | 确定相变材料的化学机械抛光停止点的方法及检测系统 |
CN103484025B (zh) * | 2013-09-25 | 2015-07-08 | 上海新安纳电子科技有限公司 | 一种自停止的gst化学机械抛光液及其制备方法和应用 |
KR20200089775A (ko) | 2019-01-17 | 2020-07-28 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2585963B2 (ja) * | 1993-12-10 | 1997-02-26 | 日本エクシード株式会社 | 化合物半導体のための研磨液及びこれを用いた化合物半導体の研磨方法 |
JP2004512681A (ja) * | 2000-10-19 | 2004-04-22 | フェロー コーポレイション | 化学機械的研磨スラリー及び研磨方法 |
WO2004053008A2 (en) * | 2002-12-10 | 2004-06-24 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
JP2005032855A (ja) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
JP2007019475A (ja) * | 2005-07-08 | 2007-01-25 | Samsung Electronics Co Ltd | 相変化メモリ素子及びその製造方法 |
JP2009016829A (ja) * | 2007-06-29 | 2009-01-22 | Cheil Industries Inc | 相変化物質研磨用化学機械研磨スラリー組成物およびこれを用いた相変化物質の研磨方法 |
JP2009016821A (ja) * | 2007-06-29 | 2009-01-22 | Cheil Industries Inc | 相変化メモリデバイスの研磨用化学機械研磨用スラリー組成物およびそれを使った相変化メモリデバイスの研磨方法 |
JP2009525615A (ja) * | 2006-02-01 | 2009-07-09 | キャボット マイクロエレクトロニクス コーポレイション | 相変化合金をcmpするための組成物及び方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6491843B1 (en) * | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
TWI288046B (en) * | 2003-11-14 | 2007-10-11 | Showa Denko Kk | Polishing composition and polishing method |
KR100615598B1 (ko) * | 2004-07-19 | 2006-08-25 | 삼성전자주식회사 | 평탄화 절연막을 갖는 반도체 장치들 및 그 형성방법들 |
KR20060016498A (ko) * | 2004-08-18 | 2006-02-22 | 삼성전자주식회사 | 슬러리 조성물, 이의 제조 방법 및 이를 이용한 가공물의연마방법 |
KR100653701B1 (ko) * | 2004-08-20 | 2006-12-04 | 삼성전자주식회사 | 반도체 소자의 작은 비아 구조체 형성방법 및 이를 사용한상변화 기억 소자의 제조방법 |
CN1300271C (zh) * | 2004-09-24 | 2007-02-14 | 中国科学院上海微系统与信息技术研究所 | 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用 |
US20060216935A1 (en) * | 2005-03-28 | 2006-09-28 | Ferro Corporation | Composition for oxide CMP in CMOS device fabrication |
KR100657972B1 (ko) * | 2005-10-28 | 2006-12-14 | 삼성전자주식회사 | 상변화 메모리 소자와 그 동작 및 제조 방법 |
US7691287B2 (en) * | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
JP5529736B2 (ja) * | 2007-07-26 | 2014-06-25 | キャボット マイクロエレクトロニクス コーポレイション | 相変化材料を化学的機械的に研磨するための組成物及び方法 |
-
2008
- 2008-07-24 JP JP2010518218A patent/JP5529736B2/ja not_active Expired - Fee Related
- 2008-07-24 SG SG2012055414A patent/SG183081A1/en unknown
- 2008-07-24 WO PCT/US2008/008978 patent/WO2009017652A2/en active Application Filing
- 2008-07-24 US US12/670,495 patent/US20100190339A1/en not_active Abandoned
- 2008-07-24 MY MYPI2010000231A patent/MY155239A/en unknown
- 2008-07-24 EP EP08794699.2A patent/EP2183333B1/en not_active Not-in-force
- 2008-07-24 KR KR1020107004124A patent/KR101325455B1/ko not_active IP Right Cessation
- 2008-07-24 CN CN200880100535.9A patent/CN101765647B/zh not_active Expired - Fee Related
- 2008-07-25 TW TW097128419A patent/TWI385243B/zh not_active IP Right Cessation
-
2010
- 2010-01-14 IL IL203300A patent/IL203300A/en not_active IP Right Cessation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2585963B2 (ja) * | 1993-12-10 | 1997-02-26 | 日本エクシード株式会社 | 化合物半導体のための研磨液及びこれを用いた化合物半導体の研磨方法 |
JP2004512681A (ja) * | 2000-10-19 | 2004-04-22 | フェロー コーポレイション | 化学機械的研磨スラリー及び研磨方法 |
WO2004053008A2 (en) * | 2002-12-10 | 2004-06-24 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
JP2005032855A (ja) * | 2003-07-09 | 2005-02-03 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
JP2007019475A (ja) * | 2005-07-08 | 2007-01-25 | Samsung Electronics Co Ltd | 相変化メモリ素子及びその製造方法 |
JP2009525615A (ja) * | 2006-02-01 | 2009-07-09 | キャボット マイクロエレクトロニクス コーポレイション | 相変化合金をcmpするための組成物及び方法 |
JP2009016829A (ja) * | 2007-06-29 | 2009-01-22 | Cheil Industries Inc | 相変化物質研磨用化学機械研磨スラリー組成物およびこれを用いた相変化物質の研磨方法 |
JP2009016821A (ja) * | 2007-06-29 | 2009-01-22 | Cheil Industries Inc | 相変化メモリデバイスの研磨用化学機械研磨用スラリー組成物およびそれを使った相変化メモリデバイスの研磨方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013047734A1 (ja) * | 2011-09-30 | 2013-04-04 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
WO2013047733A1 (ja) * | 2011-09-30 | 2013-04-04 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
JP2013080751A (ja) * | 2011-09-30 | 2013-05-02 | Fujimi Inc | 研磨用組成物 |
WO2013179718A1 (ja) * | 2012-05-29 | 2013-12-05 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
WO2013179721A1 (ja) * | 2012-05-29 | 2013-12-05 | 株式会社 フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法 |
JP2013247341A (ja) * | 2012-05-29 | 2013-12-09 | Fujimi Inc | 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法 |
US9631121B2 (en) | 2012-05-29 | 2017-04-25 | Fujimi Incorporated | Polishing composition |
JP2015528842A (ja) * | 2012-07-17 | 2015-10-01 | キャボット マイクロエレクトロニクス コーポレイション | Gst用cmpスラリー |
JP2014225517A (ja) * | 2013-05-15 | 2014-12-04 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
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TW200907036A (en) | 2009-02-16 |
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IL203300A (en) | 2015-04-30 |
US20100190339A1 (en) | 2010-07-29 |
CN101765647B (zh) | 2016-05-04 |
WO2009017652A3 (en) | 2009-04-09 |
EP2183333A2 (en) | 2010-05-12 |
WO2009017652A2 (en) | 2009-02-05 |
EP2183333B1 (en) | 2016-09-07 |
KR101325455B1 (ko) | 2013-11-04 |
EP2183333A4 (en) | 2010-09-29 |
TWI385243B (zh) | 2013-02-11 |
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