JP2009525615A5 - - Google Patents

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Publication number
JP2009525615A5
JP2009525615A5 JP2008553321A JP2008553321A JP2009525615A5 JP 2009525615 A5 JP2009525615 A5 JP 2009525615A5 JP 2008553321 A JP2008553321 A JP 2008553321A JP 2008553321 A JP2008553321 A JP 2008553321A JP 2009525615 A5 JP2009525615 A5 JP 2009525615A5
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JP
Japan
Prior art keywords
cmp
substrate
polishing
composition
phase change
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JP2008553321A
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English (en)
Japanese (ja)
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JP2009525615A (ja
JP5356832B2 (ja
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Priority claimed from PCT/US2007/002611 external-priority patent/WO2007089824A1/en
Publication of JP2009525615A publication Critical patent/JP2009525615A/ja
Publication of JP2009525615A5 publication Critical patent/JP2009525615A5/ja
Application granted granted Critical
Publication of JP5356832B2 publication Critical patent/JP5356832B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008553321A 2006-02-01 2007-01-31 相変化合金をｃｍｐするための方法 Expired - Fee Related JP5356832B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US76416106P 2006-02-01 2006-02-01
US60/764,161 2006-02-01
PCT/US2007/002611 WO2007089824A1 (en) 2006-02-01 2007-01-31 Compositions and methods for cmp of phase change alloys

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013141021A Division JP5643393B2 (ja) 2006-02-01 2013-07-04 相変化合金をｃｍｐするための組成物

Publications (3)

Publication Number Publication Date
JP2009525615A JP2009525615A (ja) 2009-07-09
JP2009525615A5 true JP2009525615A5 (enExample) 2010-03-18
JP5356832B2 JP5356832B2 (ja) 2013-12-04

Family

ID=38327727

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2008553321A Expired - Fee Related JP5356832B2 (ja) 2006-02-01 2007-01-31 相変化合金をｃｍｐするための方法
JP2013141021A Expired - Fee Related JP5643393B2 (ja) 2006-02-01 2013-07-04 相変化合金をｃｍｐするための組成物

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013141021A Expired - Fee Related JP5643393B2 (ja) 2006-02-01 2013-07-04 相変化合金をｃｍｐするための組成物

Country Status (9)

Country Link
US (1) US7897061B2 (enExample)
EP (1) EP1979431B1 (enExample)
JP (2) JP5356832B2 (enExample)
KR (1) KR101173720B1 (enExample)
CN (1) CN101370897B (enExample)
IL (1) IL192528A (enExample)
MY (1) MY147946A (enExample)
TW (1) TWI359192B (enExample)
WO (1) WO2007089824A1 (enExample)

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EP2048207A1 (en) * 2007-10-11 2009-04-15 STMicroelectronics S.r.l. Method of planarizing chalcogenide alloys, in particular for use in phase change memory devices
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US20120003834A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Method Of Polishing Chalcogenide Alloy
US20120001118A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Polishing slurry for chalcogenide alloy
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US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
EP2554613A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound
US9443739B2 (en) * 2011-08-01 2016-09-13 Basf Se Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composition comprising a specific organic compound
EP2554612A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
KR20130081599A (ko) * 2012-01-09 2013-07-17 에스케이하이닉스 주식회사 연마 조성물 및 이를 이용한 화학기계적 평탄화 방법
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WO2013137192A1 (ja) * 2012-03-16 2013-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
KR20150014924A (ko) * 2012-04-18 2015-02-09 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP2013247341A (ja) * 2012-05-29 2013-12-09 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
US9434859B2 (en) 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
KR102892429B1 (ko) 2014-12-16 2025-11-27 바스프 에스이 게르마늄을 포함하는 기판의 높은 효과적 연마를 위한 화학 기계적 연마 (cmp) 조성물
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
TWI825443B (zh) * 2015-10-30 2023-12-11 美商康寧公司 具有混合的聚合物及金屬氧化物塗層的玻璃製品
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KR100850877B1 (ko) * 2004-06-18 2008-08-07 주식회사 동진쎄미켐 철 함유 콜로이달 실리카를 포함하는 화학 기계적 연마슬러리 조성물
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
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CN100335581C (zh) * 2004-11-24 2007-09-05 中国科学院上海微系统与信息技术研究所 硫系相变材料化学机械抛光的无磨料抛光液及其应用

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