CN101370897B - 用于相变合金的化学机械抛光的组合物及方法 - Google Patents

用于相变合金的化学机械抛光的组合物及方法 Download PDF

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CN101370897B
CN101370897B CN2007800029065A CN200780002906A CN101370897B CN 101370897 B CN101370897 B CN 101370897B CN 2007800029065 A CN2007800029065 A CN 2007800029065A CN 200780002906 A CN200780002906 A CN 200780002906A CN 101370897 B CN101370897 B CN 101370897B
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cmp
composition
substrate
polishing
weight
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CN101370897A (zh
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杰弗里·戴萨德
保罗·菲尼
斯里拉姆·安朱
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CMC Materials LLC
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Cabot Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2007800029065A 2006-02-01 2007-01-31 用于相变合金的化学机械抛光的组合物及方法 Active CN101370897B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US76416106P 2006-02-01 2006-02-01
US60/764,161 2006-02-01
PCT/US2007/002611 WO2007089824A1 (en) 2006-02-01 2007-01-31 Compositions and methods for cmp of phase change alloys

Publications (2)

Publication Number Publication Date
CN101370897A CN101370897A (zh) 2009-02-18
CN101370897B true CN101370897B (zh) 2012-09-05

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Country Status (9)

Country Link
US (1) US7897061B2 (enExample)
EP (1) EP1979431B1 (enExample)
JP (2) JP5356832B2 (enExample)
KR (1) KR101173720B1 (enExample)
CN (1) CN101370897B (enExample)
IL (1) IL192528A (enExample)
MY (1) MY147946A (enExample)
TW (1) TWI359192B (enExample)
WO (1) WO2007089824A1 (enExample)

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US8735293B2 (en) 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
US20100130013A1 (en) * 2008-11-24 2010-05-27 Applied Materials, Inc. Slurry composition for gst phase change memory materials polishing
US8226841B2 (en) * 2009-02-03 2012-07-24 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous memory disks
US20120003834A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Method Of Polishing Chalcogenide Alloy
US20120001118A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Polishing slurry for chalcogenide alloy
CN102554783B (zh) * 2010-12-23 2014-12-03 中芯国际集成电路制造(上海)有限公司 研磨垫清洗方法
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
EP2554612A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5
EP2742103B1 (en) * 2011-08-01 2016-09-21 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-xGex MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
EP2554613A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
KR20130081599A (ko) * 2012-01-09 2013-07-17 에스케이하이닉스 주식회사 연마 조성물 및 이를 이용한 화학기계적 평탄화 방법
US10143358B2 (en) 2012-02-07 2018-12-04 Treble Innovations, Llc System and method for a magnetic endoscope
US9376594B2 (en) 2012-03-16 2016-06-28 Fujimi Incorporated Polishing composition
JP6132315B2 (ja) * 2012-04-18 2017-05-24 株式会社フジミインコーポレーテッド 研磨用組成物
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
JP2013247341A (ja) * 2012-05-29 2013-12-09 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
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CN107406721A (zh) 2014-12-16 2017-11-28 巴斯夫欧洲公司 用于高效率抛光含锗基材的化学机械抛光(cmp)组合物
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SG11201803373UA (en) * 2015-10-30 2018-05-30 Corning Inc Glass articles with mixed polymer and metal oxide coatings
CN110788739A (zh) * 2019-10-31 2020-02-14 云南北方昆物光电科技发展有限公司 一种锑化铟单晶片的抛光方法

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Also Published As

Publication number Publication date
US7897061B2 (en) 2011-03-01
WO2007089824A8 (en) 2007-12-06
EP1979431A4 (en) 2009-04-29
TW200734439A (en) 2007-09-16
IL192528A0 (en) 2009-02-11
JP2009525615A (ja) 2009-07-09
JP5356832B2 (ja) 2013-12-04
JP5643393B2 (ja) 2014-12-17
EP1979431B1 (en) 2018-01-10
EP1979431A1 (en) 2008-10-15
US20070178700A1 (en) 2007-08-02
WO2007089824A1 (en) 2007-08-09
IL192528A (en) 2012-10-31
MY147946A (en) 2013-02-15
KR20080092976A (ko) 2008-10-16
JP2013214769A (ja) 2013-10-17
KR101173720B1 (ko) 2012-08-13
TWI359192B (en) 2012-03-01
CN101370897A (zh) 2009-02-18

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