JP5356832B2 - 相変化合金をcmpするための方法 - Google Patents
相変化合金をcmpするための方法 Download PDFInfo
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- JP5356832B2 JP5356832B2 JP2008553321A JP2008553321A JP5356832B2 JP 5356832 B2 JP5356832 B2 JP 5356832B2 JP 2008553321 A JP2008553321 A JP 2008553321A JP 2008553321 A JP2008553321 A JP 2008553321A JP 5356832 B2 JP5356832 B2 JP 5356832B2
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
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Description
本例では、基材からのGST薄膜の除去についての従来のCMP組成物の挙動を本発明の組成物と比較して説明する。
本例では、GST薄膜の有効な除去に関して、キレート化剤を含有するCMP組成物の能力を説明する。
本例では、GST薄膜の有効な除去に関して、キレート化剤、酸化剤及び3重量%以下の量の研磨材を含有する本発明のCMP組成物の能力を説明する。
本例では、本発明のCMP組成物を使用したGST除去の時間依存性を、キレート化剤を包含していない従来のCMPスラリーと比較して説明する。
Claims (1)
- 相変化合金としてゲルマニウム・アンチモン・テルル(GST)合金を含有する基材を研磨するための化学機械研磨(CMP)方法であって、下記の工程:
(a)相変化合金を含有する前記基材の表面に、研磨パッドと、2〜4のpHを有する水性CMP組成物であって、水性キャリヤ、70〜110nmの平均粒径を有する粒状研磨材料、酸化剤及び、蓚酸、マロン酸、コハク酸、クエン酸及びその塩からなる群から選択される少なくとも1種類のキレート化剤を含み、かつ前記粒状研磨材料が0.01〜5重量%の量で存在しているCMP組成物とを接触させること、及び
(b)前記CMP組成物の一部と、前記研磨パッドと前記基材の間の表面との接触を前記基材から前記相変化合金の少なくとも一部を研磨するのに十分な時間にわたって継続する一方で、前記研磨パッドと前記基材との間で相対運動を引き起こすこと
を含んでなり、
前記基材が、線形材料をさらに含み、かつ前記GST合金及び前記線形材料の下に二酸化ケイ素の層をさらに含み、そして
前記GST合金及び前記線形材料がそれぞれ研磨され、前記二酸化ケイ素の層のところで研磨が停止される、CMP方法。
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