KR100850877B1 - 철 함유 콜로이달 실리카를 포함하는 화학 기계적 연마슬러리 조성물 - Google Patents
철 함유 콜로이달 실리카를 포함하는 화학 기계적 연마슬러리 조성물 Download PDFInfo
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- KR100850877B1 KR100850877B1 KR1020040045639A KR20040045639A KR100850877B1 KR 100850877 B1 KR100850877 B1 KR 100850877B1 KR 1020040045639 A KR1020040045639 A KR 1020040045639A KR 20040045639 A KR20040045639 A KR 20040045639A KR 100850877 B1 KR100850877 B1 KR 100850877B1
- Authority
- KR
- South Korea
- Prior art keywords
- iron
- slurry composition
- colloidal silica
- mechanical polishing
- chemical mechanical
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 239000002002 slurry Substances 0.000 title claims abstract description 69
- 238000005498 polishing Methods 0.000 title claims abstract description 64
- 239000000203 mixture Substances 0.000 title claims abstract description 51
- 239000008119 colloidal silica Substances 0.000 title claims abstract description 38
- 239000000126 substance Substances 0.000 title claims abstract description 30
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052742 iron Inorganic materials 0.000 claims abstract description 34
- 239000007800 oxidant agent Substances 0.000 claims abstract description 20
- 150000002505 iron Chemical class 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000007864 aqueous solution Substances 0.000 claims abstract description 4
- 230000001590 oxidative effect Effects 0.000 claims description 23
- 239000006185 dispersion Substances 0.000 claims description 17
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- 239000003381 stabilizer Substances 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 40
- 239000002184 metal Substances 0.000 abstract description 40
- 229910003902 SiCl 4 Inorganic materials 0.000 abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 5
- 150000004706 metal oxides Chemical class 0.000 abstract description 5
- 159000000014 iron salts Chemical class 0.000 abstract description 4
- 150000003839 salts Chemical class 0.000 abstract description 4
- -1 SiCl 4 Chemical compound 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 15
- 229910021485 fumed silica Inorganic materials 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 239000010937 tungsten Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- ISXSFOPKZQZDAO-UHFFFAOYSA-N formaldehyde;sodium Chemical compound [Na].O=C ISXSFOPKZQZDAO-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- BEQKKZICTDFVMG-UHFFFAOYSA-N 1,2,3,4,6-pentaoxepane-5,7-dione Chemical compound O=C1OOOOC(=O)O1 BEQKKZICTDFVMG-UHFFFAOYSA-N 0.000 description 1
- 239000012028 Fenton's reagent Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- PDAVOLCVHOKLEO-UHFFFAOYSA-N acetyl benzenecarboperoxoate Chemical compound CC(=O)OOC(=O)C1=CC=CC=C1 PDAVOLCVHOKLEO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- MGZTXXNFBIUONY-UHFFFAOYSA-N hydrogen peroxide;iron(2+);sulfuric acid Chemical compound [Fe+2].OO.OS(O)(=O)=O MGZTXXNFBIUONY-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- SRSFOMHQIATOFV-UHFFFAOYSA-N octanoyl octaneperoxoate Chemical compound CCCCCCCC(=O)OOC(=O)CCCCCCC SRSFOMHQIATOFV-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
텅스텐 금속막 제거 속도(Å/min) | 실리콘 산화막 제거 속도(Å/min) | 선택비 | |
비교예 1 | 350 | 22 | 16 |
실시예 1 | 500 | 24 | 20 |
비교예 2 | 790 | 20 | 40 |
실시예 2 | 1240 | 19 | 65 |
Fe/Si 함량 | pH | 텅스텐 금속막 제거 속도 (Å/min) | 실리콘 산화막 제거 속도(Å/min) | 선택비 | |
비교예 3 | 0 ppm | 2.35 | 2100 | 22 | 95 |
실시예 3 | 10 ppm | 2.28 | 1710 | 21 | 81 |
실시예 4 | 50 ppm | 2.3 | 1850 | 23 | 80 |
실시예 5 | 100 ppm | 2.29 | 1920 | 22 | 87 |
실시예 6 | 1000 ppm | 2.3 | 2080 | 21 | 99 |
부식 (Erosion) | 산화막 손실 (Oxide loss) | 키 홀 (Key hole) | 플러그 리세스 (Plug recess) | |
비교예 3 | 350 | 610 | ○ | 300 |
실시예 3 | 340 | 500 | ○ | 250 |
실시예 4 | 310 | 580 | ○ | 240 |
실시예 5 | 330 | 560 | ○ | 255 |
실시예 6 | 300 | 600 | ○ | 290 |
침전 (90일 후) | 제타 전위 (mV) | 평균 입도 (초기, nm) | 평균 입도 (90일 후, nm) | |
비교예 3 | 침전 | -12 | 172 | 응집 현상 발생 |
실시예 3 | 없음 | -25 | 165 | 191 |
실시예 4 | 없음 | -20 | 175 | 197 |
실시예 5 | 없음 | -22 | 168 | 195 |
실시예 6 | 없음 | -21 | 170 | 200 |
Claims (7)
- 연마제; 산화제; 철 함유 콜로이달 실리카; 및 물을 포함하며,상기 철 함유 콜로이달 실리카의 함량은 전체 슬러리 조성물에 대하여 0.0001 내지 0.5중량%인 것인 화학 기계적 연마 슬러리 조성물.
- 삭제
- 제1항에 있어서, 상기 철 함유 콜로이달 실리카는 수용액 중에서 철염의 존재 하에서, 실리카염을 반응시켜 제조되는 것인 화학 기계적 연마 슬러리 조성물.
- 제3항에 있어서, 상기 철염 중의 Fe와 실리카염 중의 Si의 비율은 몰비로 1 : 2 내지 1: 10인 것인 화학 기계적 연마 슬러리 조성물.
- 제1항에 있어서, 상기 철 함유 콜로이달 실리카의 크기는 50 내지 150nm인 것인 화학 기계적 연마 슬러리 조성물.
- 제1항에 있어서, 상기 연마제의 함량은 전체 슬러리 조성물에 대하여 0.1 내지 20.0중량%이며, 상기 산화제의 함량은 전체 슬러리 조성물에 대하여 1.0 내지 5.0중량%인 것인 화학-기계적 연마 슬러리 조성물.
- 제1항에 있어서, 산화보조제로서 전체 슬러리 조성물에 대하여 0.01 내지 2.0중량%의 말론산 및 분산안정제로서 0.0005 내지 0.1중량%의 나프탈렌설포닉계 고분자를 더욱 포함하는 것인 화학 기계적 연마 슬러리 조성물.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040045639A KR100850877B1 (ko) | 2004-06-18 | 2004-06-18 | 철 함유 콜로이달 실리카를 포함하는 화학 기계적 연마슬러리 조성물 |
TW094120003A TWI260707B (en) | 2004-06-18 | 2005-06-16 | Chemical mechanical polishing slurry useful for tungsten/titanium substrate |
US11/153,624 US20050282471A1 (en) | 2004-06-18 | 2005-06-16 | Chemical mechanical polishing slurry useful for tunsten/titanium substrate |
MYPI20052787A MY142487A (en) | 2004-06-18 | 2005-06-17 | Chemical mechanical polishing slurry composition including iron-doped colloidal silica |
US12/314,714 US20090120012A1 (en) | 2004-06-18 | 2008-12-16 | Method for preparing additive for chemical mechanical polishing slurry composition |
US13/433,041 US8241375B1 (en) | 2004-06-18 | 2012-03-28 | Method for preparing chemical mechanical polishing slurry composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040045639A KR100850877B1 (ko) | 2004-06-18 | 2004-06-18 | 철 함유 콜로이달 실리카를 포함하는 화학 기계적 연마슬러리 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050120326A KR20050120326A (ko) | 2005-12-22 |
KR100850877B1 true KR100850877B1 (ko) | 2008-08-07 |
Family
ID=35481235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040045639A KR100850877B1 (ko) | 2004-06-18 | 2004-06-18 | 철 함유 콜로이달 실리카를 포함하는 화학 기계적 연마슬러리 조성물 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050282471A1 (ko) |
KR (1) | KR100850877B1 (ko) |
MY (1) | MY142487A (ko) |
TW (1) | TWI260707B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010140788A2 (ko) | 2009-06-01 | 2010-12-09 | 주식회사 동진쎄미켐 | 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090120012A1 (en) * | 2004-06-18 | 2009-05-14 | Dongjin Semichem Co., Ltd. | Method for preparing additive for chemical mechanical polishing slurry composition |
KR101072271B1 (ko) * | 2005-03-14 | 2011-10-11 | 주식회사 동진쎄미켐 | 화학 기계적 연마 슬러리 조성물용 산화제 및 그 제조방법 |
US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
CN102351157A (zh) * | 2011-08-10 | 2012-02-15 | 河南大学 | 一种掺杂铁的新型氮化钛纳米颗粒 |
JP6925958B2 (ja) * | 2017-12-26 | 2021-08-25 | 花王株式会社 | 研磨液組成物 |
KR102678715B1 (ko) * | 2018-12-28 | 2024-06-28 | 주식회사 케이씨텍 | 금속-치환 연마입자를 포함하는 금속막 연마용 슬러리조성물 |
CN110394187A (zh) * | 2019-07-31 | 2019-11-01 | 江西昌河汽车有限责任公司 | 一种氮、铁掺杂共轭微孔碳材料及其制备方法与应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000075558A (ko) * | 1997-02-24 | 2000-12-15 | 맥켈러 로버트 루이스 | 중성 조건하에서 감소된 표면적을 갖는 소수성 실리카의 제조방법 |
KR20040035073A (ko) * | 2002-10-18 | 2004-04-29 | 주식회사 동진쎄미켐 | 분산 안정성이 우수한 텅스텐 금속막 연마용 화학-기계적연마 슬러리 조성물 |
KR100803876B1 (ko) | 2000-05-12 | 2008-02-14 | 닛산 가가쿠 고교 가부시키 가이샤 | 연마용 조성물 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0786504A3 (en) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
DE59806748D1 (de) * | 1997-07-25 | 2003-01-30 | Infineon Technologies Ag | Poliermittel für halbleitersubstrate |
DE10153547A1 (de) * | 2001-10-30 | 2003-05-22 | Degussa | Dispersion, enthaltend pyrogen hergestellte Abrasivpartikel mit superparamagnetischen Domänen |
US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
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2004
- 2004-06-18 KR KR1020040045639A patent/KR100850877B1/ko active IP Right Review Request
-
2005
- 2005-06-16 TW TW094120003A patent/TWI260707B/zh active
- 2005-06-16 US US11/153,624 patent/US20050282471A1/en not_active Abandoned
- 2005-06-17 MY MYPI20052787A patent/MY142487A/en unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000075558A (ko) * | 1997-02-24 | 2000-12-15 | 맥켈러 로버트 루이스 | 중성 조건하에서 감소된 표면적을 갖는 소수성 실리카의 제조방법 |
KR100803876B1 (ko) | 2000-05-12 | 2008-02-14 | 닛산 가가쿠 고교 가부시키 가이샤 | 연마용 조성물 |
KR20040035073A (ko) * | 2002-10-18 | 2004-04-29 | 주식회사 동진쎄미켐 | 분산 안정성이 우수한 텅스텐 금속막 연마용 화학-기계적연마 슬러리 조성물 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2010140788A2 (ko) | 2009-06-01 | 2010-12-09 | 주식회사 동진쎄미켐 | 이온화되지 않는 열활성 나노촉매를 포함하는 화학 기계적 연마 슬러리 조성물 및 이를 이용한 연마방법 |
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US20050282471A1 (en) | 2005-12-22 |
TWI260707B (en) | 2006-08-21 |
MY142487A (en) | 2010-11-30 |
KR20050120326A (ko) | 2005-12-22 |
TW200601448A (en) | 2006-01-01 |
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