CN100335581C - 硫系相变材料化学机械抛光的无磨料抛光液及其应用 - Google Patents
硫系相变材料化学机械抛光的无磨料抛光液及其应用 Download PDFInfo
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- CN100335581C CN100335581C CNB2004100844904A CN200410084490A CN100335581C CN 100335581 C CN100335581 C CN 100335581C CN B2004100844904 A CNB2004100844904 A CN B2004100844904A CN 200410084490 A CN200410084490 A CN 200410084490A CN 100335581 C CN100335581 C CN 100335581C
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实施例 | 抛光液编号 | 氧化剂 | 螯合剂 | 表面活性剂 | 促进剂 | 抗蚀剂 | pH调节剂 |
3 | C | H2O23.0wt% | 乙二胺四乙酸铵2.0wt% | 十六烷基三甲基溴化铵0.2wt% | 氯化铵0.5wt% | 苯并三唑0.1wt%; | 氨水,羟胺,pH9.2 |
4 | D | H2O21.0wt%,过氧化氢脲5.0wt% | 羟乙基乙二胺四乙酸铵1.0wt% | 十二烷基醇聚氧乙烯基醚0.3wt% | 氟化胺0.3wt% | 1,2,4-三唑0.3wt% | 四甲基氢氧化铵pH9.8 |
5 | E | 过硫酸铵4.0wt% | 柠檬酸铵3.0wt% | 十二烷基磺酸铵0.5wt% | 氟化胺1.1wt% | 6-甲苯基三唑0.8wt% | 氨水,羟胺pH10.2 |
6 | F | H2O22.0wt%,过硫酸铵1.0wt% | 羟乙基乙二胺四乙酸铵0.5wt% | 十六烷基三甲基溴化铵0.1wt%,十二烷基醇聚氧乙烯基醚0.1wt% | 氯化铵1.3wt% | 苯并三唑0.2wt%; | 氨水,羟胺pH10.2 |
7 | G | 过氧化氢脲,15.0wt% | 羟乙基乙二胺四乙酸铵0.5wt% | 十六烷基三甲基溴化铵0.1wt%,十二烷基醇聚氧乙烯基醚0.1wt% | 氯化铵2.0wt% | 苯并三唑0.2wt%; | 氨水,羟胺pH8.8 |
抛光液 | Ge2Sb2Te5抛光速率(/min) | SiO2抛光速率(/min) | 粗糙度RMS(nm) | 选择性(Ge2Sb2Te5/SiO2) |
抛光液A | 680 | 90 | 0.91 | 7.56 |
抛光液B | 720 | 80 | 0.82 | 9.00 |
抛光液C | 540 | 90 | 0.88 | 6.00 |
抛光液D | 420 | 70 | 0.74 | 6.00 |
抛光液E | 660 | 80 | 0.79 | 8.25 |
抛光液F | 710 | 80 | 0.69 | 8.875 |
抛光液G | 760 | 70 | 0.85 | 10.86 |
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CNB2004100844904A CN100335581C (zh) | 2004-11-24 | 2004-11-24 | 硫系相变材料化学机械抛光的无磨料抛光液及其应用 |
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CNB2004100844904A CN100335581C (zh) | 2004-11-24 | 2004-11-24 | 硫系相变材料化学机械抛光的无磨料抛光液及其应用 |
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CN1632023A CN1632023A (zh) | 2005-06-29 |
CN100335581C true CN100335581C (zh) | 2007-09-05 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7897061B2 (en) * | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
CN100492695C (zh) * | 2006-05-26 | 2009-05-27 | 中国科学院上海微系统与信息技术研究所 | 用硅湿法刻蚀和键合工艺制备相变存储器的方法 |
CN101724346A (zh) * | 2008-10-10 | 2010-06-09 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN101372606B (zh) * | 2008-10-14 | 2013-04-17 | 中国科学院上海微系统与信息技术研究所 | 用氧化铈化学机械抛光液抛光硫系化合物相变材料的方法 |
CN102690604A (zh) * | 2011-03-24 | 2012-09-26 | 中国科学院上海微系统与信息技术研究所 | 化学机械抛光液 |
EP2741892A4 (en) * | 2011-08-01 | 2015-03-18 | Basf Se | METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS WITH CHEMICAL-MECHANICAL POLISHING ELEMENTARY GERMANIUM AND / OR SI1-XGEX MATERIALS IN THE PRESENCE OF A CMP COMPOSITION OF A PH BETWEEN 3.0 AND 5.5 |
US8778211B2 (en) | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
CN103897603B (zh) * | 2012-12-28 | 2016-09-28 | 上海新安纳电子科技有限公司 | 一种gst中性化学机械抛光液 |
US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
CN107011806A (zh) * | 2017-04-27 | 2017-08-04 | 安徽智诚光学科技有限公司 | 一种手机液晶触控屏抛光剂及其制备方法 |
CN116855913A (zh) * | 2022-03-28 | 2023-10-10 | 中国科学院上海光学精密机械研究所 | 一种去除光学薄膜节瘤缺陷表面球冠状凸起的抛光方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000160141A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
EP1279708A1 (en) * | 2001-07-23 | 2003-01-29 | Fujimi Incorporated | Polishing composition and polishing method employing it |
CN1398938A (zh) * | 2002-05-10 | 2003-02-26 | 河北工业大学 | 超大规模集成电路多层铜布线化学机械全局平面化抛光液 |
WO2003031527A1 (en) * | 2001-10-11 | 2003-04-17 | Cabot Microelectronics Corporation | Phospono compound-containing polishing composition and method of using same |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000160141A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
EP1279708A1 (en) * | 2001-07-23 | 2003-01-29 | Fujimi Incorporated | Polishing composition and polishing method employing it |
WO2003031527A1 (en) * | 2001-10-11 | 2003-04-17 | Cabot Microelectronics Corporation | Phospono compound-containing polishing composition and method of using same |
CN1398938A (zh) * | 2002-05-10 | 2003-02-26 | 河北工业大学 | 超大规模集成电路多层铜布线化学机械全局平面化抛光液 |
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