SG11201704506UA - Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium - Google Patents

Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium

Info

Publication number
SG11201704506UA
SG11201704506UA SG11201704506UA SG11201704506UA SG11201704506UA SG 11201704506U A SG11201704506U A SG 11201704506UA SG 11201704506U A SG11201704506U A SG 11201704506UA SG 11201704506U A SG11201704506U A SG 11201704506UA SG 11201704506U A SG11201704506U A SG 11201704506UA
Authority
SG
Singapore
Prior art keywords
polishing
cmp
germanium
substrates
composition
Prior art date
Application number
SG11201704506UA
Inventor
Dr Max Siebert
Dr Michael Lauter
Yongqing Lan
Dr Robert Reichardt
Alexandra Muench
Manuel Six
Gerald Daniel
Dr Bastian Marten Noller
Kevin Huang
Ibrahim Sheik Ansar Usman
Original Assignee
Basf Se
Basf (China) Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Basf Se, Basf (China) Company Ltd filed Critical Basf Se
Publication of SG11201704506UA publication Critical patent/SG11201704506UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
SG11201704506UA 2014-12-16 2015-12-04 Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium SG11201704506UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP14198297 2014-12-16
PCT/IB2015/059351 WO2016097915A1 (en) 2014-12-16 2015-12-04 Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium

Publications (1)

Publication Number Publication Date
SG11201704506UA true SG11201704506UA (en) 2017-06-29

Family

ID=52023401

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201704506UA SG11201704506UA (en) 2014-12-16 2015-12-04 Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium

Country Status (8)

Country Link
US (1) US10227506B2 (en)
EP (1) EP3234049B1 (en)
JP (1) JP2018506176A (en)
KR (1) KR20180004701A (en)
CN (1) CN107406721A (en)
SG (1) SG11201704506UA (en)
TW (1) TWI700358B (en)
WO (1) WO2016097915A1 (en)

Family Cites Families (25)

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US4778825A (en) * 1986-08-29 1988-10-18 The University Of Akron Macrophage stimulation by quadrol
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
NZ236229A (en) * 1989-12-05 1993-02-25 Calgon Corp Compositions comprising ethylene oxide/propylene oxide block copolymers: use in treating wounds
JP4264781B2 (en) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド Polishing composition and polishing method
TWI228538B (en) 2000-10-23 2005-03-01 Kao Corp Polishing composition
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
JP2006278522A (en) 2005-03-28 2006-10-12 Seimi Chem Co Ltd Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing same
US20060278614A1 (en) * 2005-06-08 2006-12-14 Cabot Microelectronics Corporation Polishing composition and method for defect improvement by reduced particle stiction on copper surface
US7897061B2 (en) 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
KR20090049067A (en) * 2006-09-11 2009-05-15 아사히 가라스 가부시키가이샤 Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
KR101349983B1 (en) * 2006-09-13 2014-01-13 아사히 가라스 가부시키가이샤 Polishing agent for semiconductor integrated circuit device, polishing method, and method for manufacturing semiconductor integrated circuit device
DE102007019565A1 (en) 2007-04-25 2008-09-04 Siltronic Ag Semiconductor disk one-sided polishing method for e.g. memory cell, involves providing polishing agent between polishing cloth and disk, where polishing agent has alkaline component and component dissolving germanium
US8540894B2 (en) 2007-09-28 2013-09-24 Nitta Haas Incorporated Polishing composition
JP5467804B2 (en) * 2008-07-11 2014-04-09 富士フイルム株式会社 Polishing liquid for silicon nitride and polishing method
KR101094662B1 (en) 2008-07-24 2011-12-20 솔브레인 주식회사 Chemical mechanical polishing composition including a stopping agent of poly-silicon polishing
JP6005521B2 (en) * 2010-11-08 2016-10-12 株式会社フジミインコーポレーテッド Polishing composition and semiconductor substrate polishing method using the same
WO2012127398A1 (en) * 2011-03-22 2012-09-27 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
EP2742103B1 (en) * 2011-08-01 2016-09-21 Basf Se A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-xGex MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC ORGANIC COMPOUND
RU2014107762A (en) 2011-08-01 2015-09-10 Басф Се METHOD FOR PRODUCING SEMICONDUCTOR DEVICES, INCLUDING CHEMICAL AND MECHANICAL POLISHING OF ELEMENTARY GERMANY AND / OR MATERIAL BASED ON Si1-xGex IN THE PRESENCE OF A CMP COMPOSITION OF 5.0 OWNING WITH A 5 OWN OF 5
KR102050783B1 (en) * 2011-11-25 2019-12-02 가부시키가이샤 후지미인코퍼레이티드 Polishing composition
JP2015205348A (en) * 2012-08-30 2015-11-19 日立化成株式会社 Abrasive, abrasive set and substrate abrasion method
EP2997104A4 (en) * 2013-05-15 2017-01-25 Basf Se Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material
CN103937414B (en) * 2014-04-29 2018-03-02 杰明纳微电子股份有限公司 A kind of precise polishing solution of hard disc of computer disk substrate

Also Published As

Publication number Publication date
EP3234049A1 (en) 2017-10-25
WO2016097915A1 (en) 2016-06-23
EP3234049B1 (en) 2020-12-02
TWI700358B (en) 2020-08-01
US10227506B2 (en) 2019-03-12
JP2018506176A (en) 2018-03-01
CN107406721A (en) 2017-11-28
US20170369743A1 (en) 2017-12-28
KR20180004701A (en) 2018-01-12
TW201700706A (en) 2017-01-01
EP3234049A4 (en) 2018-11-14

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