KR101173720B1 - 상변화 합금의 ｃｍｐ를 위한 조성물 및 방법 - Google Patents

상변화 합금의 ｃｍｐ를 위한 조성물 및 방법 Download PDF

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KR101173720B1
KR101173720B1 KR1020087021237A KR20087021237A KR101173720B1 KR 101173720 B1 KR101173720 B1 KR 101173720B1 KR 1020087021237 A KR1020087021237 A KR 1020087021237A KR 20087021237 A KR20087021237 A KR 20087021237A KR 101173720 B1 KR101173720 B1 KR 101173720B1
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cmp
polishing
substrate
composition
acid
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KR20080092976A (ko
Inventor
제프리 디사르드
파울 페니
스리람 안주르
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캐보트 마이크로일렉트로닉스 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020087021237A 2006-02-01 2007-01-31 상변화 합금의 ｃｍｐ를 위한 조성물 및 방법 Active KR101173720B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US76416106P 2006-02-01 2006-02-01
US60/764,161 2006-02-01
PCT/US2007/002611 WO2007089824A1 (en) 2006-02-01 2007-01-31 Compositions and methods for cmp of phase change alloys

Publications (2)

Publication Number Publication Date
KR20080092976A KR20080092976A (ko) 2008-10-16
KR101173720B1 true KR101173720B1 (ko) 2012-08-13

Family

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KR1020087021237A Active KR101173720B1 (ko) 2006-02-01 2007-01-31 상변화 합금의 ｃｍｐ를 위한 조성물 및 방법

Country Status (9)

Country Link
US (1) US7897061B2 (enExample)
EP (1) EP1979431B1 (enExample)
JP (2) JP5356832B2 (enExample)
KR (1) KR101173720B1 (enExample)
CN (1) CN101370897B (enExample)
IL (1) IL192528A (enExample)
MY (1) MY147946A (enExample)
TW (1) TWI359192B (enExample)
WO (1) WO2007089824A1 (enExample)

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US20090001339A1 (en) * 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
MY155239A (en) * 2007-07-26 2015-09-30 Cabot Microelectronics Corp Compositions and methods for chemical-mechanical polishing of phase change materials
EP2048207A1 (en) * 2007-10-11 2009-04-15 STMicroelectronics S.r.l. Method of planarizing chalcogenide alloys, in particular for use in phase change memory devices
KR101198100B1 (ko) * 2007-12-11 2012-11-09 삼성전자주식회사 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
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US8226841B2 (en) * 2009-02-03 2012-07-24 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous memory disks
US20120003834A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Method Of Polishing Chalcogenide Alloy
US20120001118A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Polishing slurry for chalcogenide alloy
CN102554783B (zh) 2010-12-23 2014-12-03 中芯国际集成电路制造(上海)有限公司 研磨垫清洗方法
US8309468B1 (en) 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
EP2554613A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound
EP2554612A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5
US9443739B2 (en) 2011-08-01 2016-09-13 Basf Se Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composition comprising a specific organic compound
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
KR20130081599A (ko) * 2012-01-09 2013-07-17 에스케이하이닉스 주식회사 연마 조성물 및 이를 이용한 화학기계적 평탄화 방법
US10143358B2 (en) 2012-02-07 2018-12-04 Treble Innovations, Llc System and method for a magnetic endoscope
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US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
US8920667B2 (en) 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
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Also Published As

Publication number Publication date
US20070178700A1 (en) 2007-08-02
KR20080092976A (ko) 2008-10-16
TW200734439A (en) 2007-09-16
JP2013214769A (ja) 2013-10-17
JP5643393B2 (ja) 2014-12-17
IL192528A (en) 2012-10-31
US7897061B2 (en) 2011-03-01
EP1979431B1 (en) 2018-01-10
IL192528A0 (en) 2009-02-11
JP2009525615A (ja) 2009-07-09
EP1979431A1 (en) 2008-10-15
WO2007089824A1 (en) 2007-08-09
CN101370897A (zh) 2009-02-18
MY147946A (en) 2013-02-15
EP1979431A4 (en) 2009-04-29
CN101370897B (zh) 2012-09-05
WO2007089824A8 (en) 2007-12-06
TWI359192B (en) 2012-03-01
JP5356832B2 (ja) 2013-12-04

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