WO2013137192A1 - 研磨用組成物 - Google Patents
研磨用組成物 Download PDFInfo
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- WO2013137192A1 WO2013137192A1 PCT/JP2013/056636 JP2013056636W WO2013137192A1 WO 2013137192 A1 WO2013137192 A1 WO 2013137192A1 JP 2013056636 W JP2013056636 W JP 2013056636W WO 2013137192 A1 WO2013137192 A1 WO 2013137192A1
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- carbon atoms
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- 229910052799 carbon Inorganic materials 0.000 claims abstract description 20
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 15
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims abstract description 14
- -1 diketone compound Chemical class 0.000 claims description 41
- 125000000524 functional group Chemical group 0.000 claims description 28
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- 239000002612 dispersion medium Substances 0.000 description 1
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- KCHWKBCUPLJWJA-UHFFFAOYSA-N dodecyl 3-oxobutanoate Chemical compound CCCCCCCCCCCCOC(=O)CC(C)=O KCHWKBCUPLJWJA-UHFFFAOYSA-N 0.000 description 1
- YMCDYRGMTRCAPZ-UHFFFAOYSA-N ethyl 2-acetyl-3-oxobutanoate Chemical compound CCOC(=O)C(C(C)=O)C(C)=O YMCDYRGMTRCAPZ-UHFFFAOYSA-N 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 150000002244 furazanes Chemical class 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 description 1
- CTHCTLCNUREAJV-UHFFFAOYSA-N heptane-2,4,6-trione Chemical compound CC(=O)CC(=O)CC(C)=O CTHCTLCNUREAJV-UHFFFAOYSA-N 0.000 description 1
- DGCTVLNZTFDPDJ-UHFFFAOYSA-N heptane-3,5-dione Chemical compound CCC(=O)CC(=O)CC DGCTVLNZTFDPDJ-UHFFFAOYSA-N 0.000 description 1
- NDOGLIPWGGRQCO-UHFFFAOYSA-N hexane-2,4-dione Chemical compound CCC(=O)CC(C)=O NDOGLIPWGGRQCO-UHFFFAOYSA-N 0.000 description 1
- NUKZAGXMHTUAFE-UHFFFAOYSA-N hexanoic acid methyl ester Natural products CCCCCC(=O)OC NUKZAGXMHTUAFE-UHFFFAOYSA-N 0.000 description 1
- RKKOMEIYHHASIN-UHFFFAOYSA-N hydroperoxyboronic acid Chemical compound OOB(O)O RKKOMEIYHHASIN-UHFFFAOYSA-N 0.000 description 1
- GEOVEUCEIQCBKH-UHFFFAOYSA-N hypoiodous acid Chemical compound IO GEOVEUCEIQCBKH-UHFFFAOYSA-N 0.000 description 1
- IENZCGNHSIMFJE-UHFFFAOYSA-N indole-5-carboxylic acid Chemical compound OC(=O)C1=CC=C2NC=CC2=C1 IENZCGNHSIMFJE-UHFFFAOYSA-N 0.000 description 1
- 150000002475 indoles Chemical class 0.000 description 1
- HOBCFUWDNJPFHB-UHFFFAOYSA-N indolizine Chemical compound C1=CC=CN2C=CC=C21 HOBCFUWDNJPFHB-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical compound C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 1
- CTAPFRYPJLPFDF-UHFFFAOYSA-N isoxazole Chemical compound C=1C=NOC=1 CTAPFRYPJLPFDF-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QMPFMODFBNEYJH-UHFFFAOYSA-N methyl 1h-1,2,4-triazole-5-carboxylate Chemical compound COC(=O)C1=NC=NN1 QMPFMODFBNEYJH-UHFFFAOYSA-N 0.000 description 1
- XJMIXEAZMCTAGH-UHFFFAOYSA-N methyl 3-oxopentanoate Chemical compound CCC(=O)CC(=O)OC XJMIXEAZMCTAGH-UHFFFAOYSA-N 0.000 description 1
- NTMXFHGYWJIAAE-UHFFFAOYSA-N n,n-diethyl-3-oxobutanamide Chemical compound CCN(CC)C(=O)CC(C)=O NTMXFHGYWJIAAE-UHFFFAOYSA-N 0.000 description 1
- HZGHSXQROPQLCJ-UHFFFAOYSA-N n,n-dimethyl-4-oxopentanamide Chemical compound CN(C)C(=O)CCC(C)=O HZGHSXQROPQLCJ-UHFFFAOYSA-N 0.000 description 1
- CYLHYHWFVOHKMK-UHFFFAOYSA-N n-(2-hydroxyethyl)-3-oxobutanamide Chemical compound CC(=O)CC(=O)NCCO CYLHYHWFVOHKMK-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- BMOMBHKAYGMGCR-UHFFFAOYSA-N octadecyl 3-oxobutanoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)CC(C)=O BMOMBHKAYGMGCR-UHFFFAOYSA-N 0.000 description 1
- AIVJKJUUXMUBEG-UHFFFAOYSA-N octane-2,4,7-trione Chemical compound CC(=O)CCC(=O)CC(C)=O AIVJKJUUXMUBEG-UHFFFAOYSA-N 0.000 description 1
- IKYDDBGYKFPTGF-UHFFFAOYSA-N octyl 3-oxobutanoate Chemical compound CCCCCCCCOC(=O)CC(C)=O IKYDDBGYKFPTGF-UHFFFAOYSA-N 0.000 description 1
- KOJIAQAVFFLLGJ-UHFFFAOYSA-N octyl 3-oxopentanoate Chemical compound CCCCCCCCOC(=O)CC(=O)CC KOJIAQAVFFLLGJ-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- JMRJWEJJUKUBEA-UHFFFAOYSA-N p-Chloroacetoacetanilide Chemical compound CC(=O)CC(=O)NC1=CC=C(Cl)C=C1 JMRJWEJJUKUBEA-UHFFFAOYSA-N 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- MPNNOLHYOHFJKL-UHFFFAOYSA-N peroxyphosphoric acid Chemical compound OOP(O)(O)=O MPNNOLHYOHFJKL-UHFFFAOYSA-N 0.000 description 1
- LFSXCDWNBUNEEM-UHFFFAOYSA-N phthalazine Chemical compound C1=NN=CC2=CC=CC=C21 LFSXCDWNBUNEEM-UHFFFAOYSA-N 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- QHFDHWJHIAVELW-UHFFFAOYSA-M sodium;4,6-dioxo-1h-1,3,5-triazin-2-olate Chemical compound [Na+].[O-]C1=NC(=O)NC(=O)N1 QHFDHWJHIAVELW-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 125000005420 sulfonamido group Chemical group S(=O)(=O)(N*)* 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/02—Light metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the polishing composition is used for polishing a polishing object having a portion containing a group IV material, more specifically, for polishing a polishing object and manufacturing a substrate.
- the object to be polished may further have a silicon material portion.
- the group IV material include Ge (germanium), SiGe (silicon germanium), and the like.
- the silicon material include polysilicon, silicon oxide, silicon nitride, and the like.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
研磨用組成物中に含まれる酸化剤の種類は特に限定されないが、0.3V以上の標準電極電位を有していることが好ましい。0.3V以上の標準電極電位を有する酸化剤を使用した場合には、0.3V未満の標準電極電位を有する酸化剤を使用した場合に比べて、研磨用組成物によるIV族材料を含有する部分の研磨速度が向上する点で有利である。0.3V以上の標準電極電位を有する酸化剤の具体例としては、例えば、過酸化水素、過酸化ナトリウム、過酸化バリウム、有機酸化剤、オゾン水、銀(II)塩、鉄(III)塩、ならびに過マンガン酸、クロム酸、重クロム酸、ペルオキソ二硫酸、ペルオキソリン酸、ペルオキソ硫酸、ペルオキソホウ酸、過ギ酸、過酢酸、過安息香酸、過フタル酸、次亜塩素酸、次亜臭素酸、次亜ヨウ素酸、塩素酸、亜塩素酸、過塩素酸、臭素酸、ヨウ素酸、過ヨウ素酸、硫酸、過硫酸、クエン酸、ジクロロイソシアヌル酸およびそれらの塩等が挙げられる。これらの中でも、研磨用組成物によるIV族材料を含有する部分の研磨速度が大きく向上することから、特に過酸化水素、過硫酸アンモニウム、次亜塩素酸、次亜塩素酸ナトリウム、過ヨウ素酸およびジクロロイソシアヌル酸ナトリウムが好ましい。
研磨用組成物中に含まれる防食剤の種類は特に限定されないが、分子内に含有される2個以上のカルボニル基が炭素原子を介して結合した化合物からなる群より選ばれる少なくとも1種であることが好ましい。従来の研磨用組成物では、研磨用組成物中の添加剤(特に錯化剤)等により、IV族材料を含有する部分の過度なエッチングが起こっていた。これに対して、特に分子内に含有される2個以上のカルボニル基が炭素原子を介して結合した化合物を防食剤として用いた本実施形態の研磨用組成物の場合は、IV族材料が、防食剤の分子内の2個以上のカルボニル基と結合して不溶性の錯体を形成し、不溶性の脆性膜を形成すると考えられる。その結果、従来の研磨用組成物中の添加剤(特に錯化剤)等によるIV族材料に対する過度なエッチングが抑制され、エッチングを原因とした段差が研磨対象物の表面に生じることを抑制することができると考えられる。なお、上記メカニズムは推測によるものであり、本実施形態は上記メカニズムに何ら制限されるものではない。
R1は炭素数1~4の直鎖状または分枝状のアルキレン基であり、
R2およびR3は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状、もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、または無置換もしくは置換基を有する炭素数6~20のアリール基であり、
X1およびX2は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状、もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、無置換もしくは置換基を有する炭素数6~20のアリール基、下記官能基(1)、または下記官能基(2)である。この際、R2とX1、R2とR3、およびR3とX2の一組以上は、直接または炭素原子を介して互いに結合して環状構造を形成してもよい。)
より具体的には、前記一般式(1)中のR1の炭素数が2以下である、下記一般式(2)により表される1,3-ジケトン化合物、および下記一般式(3)により表される1,4-ジケトン化合物からなる群より選択される少なくとも1種の化合物が好ましく挙げられる。
X1およびX2は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、無置換もしくは置換基を有する炭素数6~20のアリール基、下記官能基(1)、または下記官能基(2)である。この際、R9とX1、R9とR10、R11とR12、およびR12とX2の一組以上は、直接または炭素原子を介して互いに結合して環状構造を形成してもよい。)
研磨用組成物中に含まれる防食剤が、分子内に含有される2個以上のカルボニル基が炭素原子を介して結合した化合物のうち、前記一般式(2)で表される1,3-ジケトン化合物の例としては、具体的には、β-ジケトン化合物、β-ケトアミド化合物、およびβ-ケトエステル化合物等が挙げられる。さらに具体的には、例えば、アセチルアセトン、3-メチル-2,4-ペンタンジオン、3-エチル-2,4-ペンタンジオン、3,5-ヘプタンジオン、6-メチル-2,4-ヘプタンジオン、2,6-ジメチル-3,5-ヘプタンジオン、2,2,6,6-テトラメチルヘプタン-3,5-ジオン、2-アセチルシクロペンタノン、3-クロロアセチルアセトン、トリフルオロアセチルアセトン、2,4-ヘキサンジオン、ベンゾイルアセトン、ベンゾイルトリフルオロアセトン、ジベンゾイルメタン、N,N-ジメチルアセトアセタミド、N,N-ジエチルアセトアセタミド、N,N-ジメチル-2-クロロアセトアセタミド、1,3-ジエトキシプロパン-1,3-ジオン、N,N-ジメチル-4-オキソペンタンアミド、5-オキソカプロン酸メチル、ジアセト酢酸エチル、N-メチルアセト酢酸アミド、N,N-ジメチルアセト酢酸アミド、N-(2-ヒドロキシエチル)アセト酢酸アミド、アセト酢酸アニリド、N-(2-メチルフェニル)アセト酢酸アミド、N-(4-メトキシフェニル)アセト酢酸アミド、N-(4-クロロフェニル)アセト酢酸アミド、3-オキソペンタン酸アミド、アセト酢酸メチル、アセト酢酸エチル、アセト酢酸オクチル、アセト酢酸オレイル、アセト酢酸ラウリル、アセト酢酸ステアリル、アセト酢酸オレイル、アセト酢酸ベンジル、3-オキソペンタン酸メチル、3-オキソペンタン酸オクチル等が挙げられる。
R15、R16、R17、およびR18は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状、もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、または無置換もしくは置換基を有する炭素数6~20のアリール基であり、
X1およびX2は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、無置換もしくは置換基を有する炭素数6~20のアリール基、下記官能基(1)、または下記官能基(2)である。この際、X1とR15、R15とR16、R16とR17、R17とR18、およびR18とX2の一組以上は、直接または炭素原子を介して互いに結合して環状構造を形成してもよい。)
上記一般式(4)で表されるトリケトン化合物のさらに具体的な例としては、例えば、2,4,6-ヘプタントリオン、2,4,7‐オクタントリオン等が挙げられる。
上述のように、本発明の研磨用組成物は、IV族材料を含有する部分を有する研磨対象物の研磨に好適に用いられる。よって、本発明は、IV族材料を含有する部分を有する研磨対象物を本発明の研磨用組成物で研磨する研磨方法を提供する。また、本発明は、IV族材料を含有する部分を有する研磨対象物を前記研磨方法で研磨する工程を含む基板の製造方法を提供する。
Claims (10)
- IV族材料を含有する部分を有する研磨対象物を研磨する用途で使用される研磨用組成物であって、酸化剤と防食剤とを含有する、研磨用組成物。
- 前記防食剤は、分子内に含有される2個以上のカルボニル基が分子内で炭素原子を介して結合した化合物からなる群より選ばれる少なくとも1種である、請求項1に記載の研磨用組成物。
- 前記化合物が、下記一般式(1)により表されるジケトン化合物である、請求項2に記載の研磨用組成物。
R2およびR3は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状、もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、無置換もしくは置換基を有する炭素数6~20のアリール基であり、
X1およびX2は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状、もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、無置換もしくは置換基を有する炭素数6~20のアリール基、下記官能基(1)、または下記官能基(2)である。この際、X1とR2、R2とR3、およびR3とX2の一組以上は、直接または炭素原子を介して互いに結合して環状構造を形成してもよい。)
- 前記化合物が、一般式(1)中のR1の炭素原子数が2以下である、下記一般式(2)により表されるジケトン化合物および下記一般式(3)により表されるジケトン化合物からなる群より選択される少なくとも1種である、請求項3に記載の研磨用組成物。
X1およびX2は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状、もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、無置換もしくは置換基を有する炭素数6~20のアリール基、下記官能基(1)、または下記官能基(2)である。この際、R9とX1、R9とR10、R11とR12、およびR12とX2の一組以上は、直接または炭素原子を介して互いに結合して環状構造を形成してもよい。)
- 前記化合物が、前記一般式(1)~(3)中のX1およびX2の少なくとも一方が、4個以上の炭素原子を有する無置換もしくは置換基を有する直鎖状、分枝状、もしくは環状のアルキル基、ヒドロキシメチル基またはヒドロキシエチル基であるジケトン化合物からなる群より選択される少なくとも1種である、請求項3または4に記載の研磨用組成物。
- 前記化合物が、前記一般式(1)~(3)中のR2~R12が、それぞれ独立して、水素原子またはハロゲン原子であるジケトン化合物からなる群より選択される少なくとも1種である、請求項3~5のいずれか1項に記載の研磨用組成物。
- 前記化合物が、下記一般式(4)により表される化合物である、請求項2に記載の研磨用組成物。
R15、R16、R17、およびR18は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数1~10の直鎖状、分枝状もしくは環状のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、無置換もしくは置換基を有する炭素数6~20のアリール基であり、
X1およびX2は、それぞれ独立して、水素原子、ハロゲン原子、無置換もしくは置換基を有する炭素数6~20のアルキル基、ヒドロキシメチル基、ヒドロキシエチル基、無置換もしくは置換基を有する炭素数6~20のアリール基、下記官能基(1)、または下記官能基(2)である。この際、X1とR15、R15とR16、R16とR17、R17とR18、およびR18とX2の一組以上は、直接または炭素原子を介して互いに結合して環状構造を形成してもよい。)
- pHが5以上12以下である、請求項1~7のいずれか1項に記載の研磨用組成物。
- IV族材料を含有する部分を有する研磨対象物を、請求項1~8のいずれか1項に記載の研磨用組成物を用いて研磨する、研磨方法。
- 請求項9に記載の研磨方法で研磨する工程を含む、IV族材料を含有する部分を有する基板の製造方法。
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