TWI648387B - Grinding composition - Google Patents
Grinding composition Download PDFInfo
- Publication number
- TWI648387B TWI648387B TW104107909A TW104107909A TWI648387B TW I648387 B TWI648387 B TW I648387B TW 104107909 A TW104107909 A TW 104107909A TW 104107909 A TW104107909 A TW 104107909A TW I648387 B TWI648387 B TW I648387B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- acid
- polishing
- pyrrolidone
- sodium
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 72
- 238000000227 grinding Methods 0.000 title claims abstract description 17
- 238000005498 polishing Methods 0.000 claims abstract description 122
- 239000007800 oxidant agent Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 34
- 125000005843 halogen group Chemical group 0.000 claims abstract description 18
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 18
- -1 N-chloroammonium imine Chemical class 0.000 claims description 75
- 239000006061 abrasive grain Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 13
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 10
- 125000000623 heterocyclic group Chemical group 0.000 claims description 8
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 8
- 239000011575 calcium Substances 0.000 claims description 7
- 125000000524 functional group Chemical group 0.000 claims description 7
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 6
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 6
- CUILPNURFADTPE-UHFFFAOYSA-N hypobromous acid Chemical compound BrO CUILPNURFADTPE-UHFFFAOYSA-N 0.000 claims description 6
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 5
- ODHCTXKNWHHXJC-UHFFFAOYSA-N acide pyroglutamique Natural products OC(=O)C1CCC(=O)N1 ODHCTXKNWHHXJC-UHFFFAOYSA-N 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 5
- CRWJEUDFKNYSBX-UHFFFAOYSA-N sodium;hypobromite Chemical compound [Na+].Br[O-] CRWJEUDFKNYSBX-UHFFFAOYSA-N 0.000 claims description 5
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims description 4
- WLDMPODMCFGWAA-UHFFFAOYSA-N 3a,4,5,6,7,7a-hexahydroisoindole-1,3-dione Chemical compound C1CCCC2C(=O)NC(=O)C21 WLDMPODMCFGWAA-UHFFFAOYSA-N 0.000 claims description 4
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 claims description 4
- IOGISYQVOGVIEU-UHFFFAOYSA-N 4-hydroxypyrrolidin-2-one Chemical compound OC1CNC(=O)C1 IOGISYQVOGVIEU-UHFFFAOYSA-N 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- LQZMLBORDGWNPD-UHFFFAOYSA-N N-iodosuccinimide Chemical compound IN1C(=O)CCC1=O LQZMLBORDGWNPD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004153 Potassium bromate Substances 0.000 claims description 4
- VULIHENHKGDFAB-UHFFFAOYSA-N Pterolactam Chemical compound COC1CCC(=O)N1 VULIHENHKGDFAB-UHFFFAOYSA-N 0.000 claims description 4
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 4
- 125000003172 aldehyde group Chemical group 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 claims description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 125000000018 nitroso group Chemical group N(=O)* 0.000 claims description 4
- 229940094037 potassium bromate Drugs 0.000 claims description 4
- 235000019396 potassium bromate Nutrition 0.000 claims description 4
- XUXNAKZDHHEHPC-UHFFFAOYSA-M sodium bromate Chemical compound [Na+].[O-]Br(=O)=O XUXNAKZDHHEHPC-UHFFFAOYSA-M 0.000 claims description 4
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 claims description 4
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 4
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 claims description 3
- ODHCTXKNWHHXJC-VKHMYHEASA-N 5-oxo-L-proline Chemical compound OC(=O)[C@@H]1CCC(=O)N1 ODHCTXKNWHHXJC-VKHMYHEASA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- ODHCTXKNWHHXJC-GSVOUGTGSA-N Pyroglutamic acid Natural products OC(=O)[C@H]1CCC(=O)N1 ODHCTXKNWHHXJC-GSVOUGTGSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims description 3
- 229940077239 chlorous acid Drugs 0.000 claims description 3
- 150000002466 imines Chemical class 0.000 claims description 3
- LWXVCCOAQYNXNX-UHFFFAOYSA-N lithium hypochlorite Chemical compound [Li+].Cl[O-] LWXVCCOAQYNXNX-UHFFFAOYSA-N 0.000 claims description 3
- JOUZTPYNXDURHJ-UHFFFAOYSA-N lithium;hypobromite Chemical compound [Li+].Br[O-] JOUZTPYNXDURHJ-UHFFFAOYSA-N 0.000 claims description 3
- WYWLSUBVZXKJGO-UHFFFAOYSA-N lithium;hypofluorite Chemical compound [Li+].F[O-] WYWLSUBVZXKJGO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- KEBMRNXDMRFGNV-UHFFFAOYSA-N 1-(chloromethyl)pyrrolidin-2-one Chemical compound ClCN1CCCC1=O KEBMRNXDMRFGNV-UHFFFAOYSA-N 0.000 claims description 2
- ZTUKZULGOCFJET-UHFFFAOYSA-N 1-phenylpyrrolidine-2,5-dione Chemical compound O=C1CCC(=O)N1C1=CC=CC=C1 ZTUKZULGOCFJET-UHFFFAOYSA-N 0.000 claims description 2
- QSTXMZUAMCBUQU-UHFFFAOYSA-N 2-(1-methyl-5-oxopyrrolidin-2-yl)acetic acid Chemical compound CN1C(CC(O)=O)CCC1=O QSTXMZUAMCBUQU-UHFFFAOYSA-N 0.000 claims description 2
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 claims description 2
- HCKUBNLZMKAEIN-UHFFFAOYSA-N 3-amino-1-hydroxypyrrolidin-2-one Chemical compound NC1CCN(O)C1=O HCKUBNLZMKAEIN-UHFFFAOYSA-N 0.000 claims description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- MNAHCZZIMJUOPZ-UHFFFAOYSA-N BrO.N Chemical compound BrO.N MNAHCZZIMJUOPZ-UHFFFAOYSA-N 0.000 claims description 2
- ZKQDCIXGCQPQNV-UHFFFAOYSA-N Calcium hypochlorite Chemical compound [Ca+2].Cl[O-].Cl[O-] ZKQDCIXGCQPQNV-UHFFFAOYSA-N 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- NQTADLQHYWFPDB-UHFFFAOYSA-N N-Hydroxysuccinimide Chemical compound ON1C(=O)CCC1=O NQTADLQHYWFPDB-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- 229920001145 Poly(N-vinylacetamide) Polymers 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- ZKJOXOJMGXFSPF-QYZPTAICSA-N [[(2r,3r,4r,5r)-5-(6-aminopurin-9-yl)-3-hydroxy-4-phosphonooxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(3-carbamoylpyridin-1-ium-1-yl)-3,4-dihydroxyoxolan-2-yl]methyl phosphate;hydrate Chemical compound O.NC(=O)C1=CC=C[N+]([C@H]2[C@@H]([C@H](O)[C@@H](COP([O-])(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](OP(O)(O)=O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=C1 ZKJOXOJMGXFSPF-QYZPTAICSA-N 0.000 claims description 2
- KBKZYWOOZPIUJT-UHFFFAOYSA-N azane;hypochlorous acid Chemical compound N.ClO KBKZYWOOZPIUJT-UHFFFAOYSA-N 0.000 claims description 2
- ISFLYIRWQDJPDR-UHFFFAOYSA-L barium chlorate Chemical compound [Ba+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O ISFLYIRWQDJPDR-UHFFFAOYSA-L 0.000 claims description 2
- HPEWZLCIOKVLBZ-UHFFFAOYSA-N barium hypochlorite Chemical compound [Ba+2].Cl[O-].Cl[O-] HPEWZLCIOKVLBZ-UHFFFAOYSA-N 0.000 claims description 2
- VJFAIDAVGLTVGD-UHFFFAOYSA-N barium(2+) dihypofluorite Chemical compound [Ba++].[O-]F.[O-]F VJFAIDAVGLTVGD-UHFFFAOYSA-N 0.000 claims description 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 2
- XVDWMONETMNKBK-UHFFFAOYSA-N calcium;dihypobromite Chemical compound [Ca+2].Br[O-].Br[O-] XVDWMONETMNKBK-UHFFFAOYSA-N 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 claims description 2
- 229940005991 chloric acid Drugs 0.000 claims description 2
- HAPOVYFOVVWLRS-UHFFFAOYSA-N ethosuximide Chemical compound CCC1(C)CC(=O)NC1=O HAPOVYFOVVWLRS-UHFFFAOYSA-N 0.000 claims description 2
- QYJOOVQLTTVTJY-YFKPBYRVSA-N ethyl (2s)-5-oxopyrrolidine-2-carboxylate Chemical compound CCOC(=O)[C@@H]1CCC(=O)N1 QYJOOVQLTTVTJY-YFKPBYRVSA-N 0.000 claims description 2
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- VIVMUYLVKOXORD-UHFFFAOYSA-N magnesium dihypobromite Chemical compound [Mg+2].Br[O-].Br[O-] VIVMUYLVKOXORD-UHFFFAOYSA-N 0.000 claims description 2
- RXVFHPTXNPUIOJ-UHFFFAOYSA-N magnesium dihypofluorite Chemical compound [Mg++].[O-]F.[O-]F RXVFHPTXNPUIOJ-UHFFFAOYSA-N 0.000 claims description 2
- YZQBYALVHAANGI-UHFFFAOYSA-N magnesium;dihypochlorite Chemical compound [Mg+2].Cl[O-].Cl[O-] YZQBYALVHAANGI-UHFFFAOYSA-N 0.000 claims description 2
- NALMPLUMOWIVJC-UHFFFAOYSA-N n,n,4-trimethylbenzeneamine oxide Chemical compound CC1=CC=C([N+](C)(C)[O-])C=C1 NALMPLUMOWIVJC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 claims description 2
- VISKNDGJUCDNMS-UHFFFAOYSA-M potassium;chlorite Chemical compound [K+].[O-]Cl=O VISKNDGJUCDNMS-UHFFFAOYSA-M 0.000 claims description 2
- ORQYPOUSZINNCB-UHFFFAOYSA-N potassium;hypobromite Chemical compound [K+].Br[O-] ORQYPOUSZINNCB-UHFFFAOYSA-N 0.000 claims description 2
- FGMDLONQELOFGF-UHFFFAOYSA-N potassium;hypofluorite Chemical compound [K+].F[O-] FGMDLONQELOFGF-UHFFFAOYSA-N 0.000 claims description 2
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 2
- SDLBJIZEEMKQKY-UHFFFAOYSA-M silver chlorate Chemical compound [Ag+].[O-]Cl(=O)=O SDLBJIZEEMKQKY-UHFFFAOYSA-M 0.000 claims description 2
- 239000011697 sodium iodate Substances 0.000 claims description 2
- 235000015281 sodium iodate Nutrition 0.000 claims description 2
- 229940032753 sodium iodate Drugs 0.000 claims description 2
- IXZDIALLLMRYOU-UHFFFAOYSA-N tert-butyl hypochlorite Chemical compound CC(C)(C)OCl IXZDIALLLMRYOU-UHFFFAOYSA-N 0.000 claims description 2
- KHFBUINXBGUEQW-UHFFFAOYSA-N versimide Natural products COC(=O)C(=C)N1C(=O)CC(C)C1=O KHFBUINXBGUEQW-UHFFFAOYSA-N 0.000 claims description 2
- KYEACNNYFNZCST-UHFFFAOYSA-N 1-methylpyrrolidine-2,5-dione Chemical compound CN1C(=O)CCC1=O KYEACNNYFNZCST-UHFFFAOYSA-N 0.000 claims 1
- XVEPBYZYNPTQFF-UHFFFAOYSA-N 2-aminoethanol;hypochlorous acid Chemical compound ClO.NCCO XVEPBYZYNPTQFF-UHFFFAOYSA-N 0.000 claims 1
- NQQPHCJPHACZEZ-UHFFFAOYSA-N BrO.N(CCO)(CCO)CCO Chemical compound BrO.N(CCO)(CCO)CCO NQQPHCJPHACZEZ-UHFFFAOYSA-N 0.000 claims 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims 1
- HQGPKMSGXAUKHT-UHFFFAOYSA-N L-pyroglutamic acid methyl ester Natural products COC(=O)C1CCC(=O)N1 HQGPKMSGXAUKHT-UHFFFAOYSA-N 0.000 claims 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims 1
- WLWFNJKHKGIJNW-UHFFFAOYSA-N Phensuximide Chemical compound O=C1N(C)C(=O)CC1C1=CC=CC=C1 WLWFNJKHKGIJNW-UHFFFAOYSA-N 0.000 claims 1
- GMZVRMREEHBGGF-UHFFFAOYSA-N Piracetam Chemical compound NC(=O)CN1CCCC1=O GMZVRMREEHBGGF-UHFFFAOYSA-N 0.000 claims 1
- OEMUKJZHMHTYSL-UHFFFAOYSA-N [Na].OCl=O Chemical compound [Na].OCl=O OEMUKJZHMHTYSL-UHFFFAOYSA-N 0.000 claims 1
- GJLYNKHFWXDDKG-UHFFFAOYSA-N barium(2+) dihypobromite Chemical compound [Ba+2].Br[O-].Br[O-] GJLYNKHFWXDDKG-UHFFFAOYSA-N 0.000 claims 1
- 239000000571 coke Substances 0.000 claims 1
- YVIVRJLWYJGJTJ-UHFFFAOYSA-N gamma-Valerolactam Chemical compound CC1CCC(=O)N1 YVIVRJLWYJGJTJ-UHFFFAOYSA-N 0.000 claims 1
- 229930195712 glutamate Natural products 0.000 claims 1
- GEOVEUCEIQCBKH-UHFFFAOYSA-N hypoiodous acid Chemical compound IO GEOVEUCEIQCBKH-UHFFFAOYSA-N 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- HQGPKMSGXAUKHT-BYPYZUCNSA-N methyl (2s)-5-oxopyrrolidine-2-carboxylate Chemical compound COC(=O)[C@@H]1CCC(=O)N1 HQGPKMSGXAUKHT-BYPYZUCNSA-N 0.000 claims 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 claims 1
- 229940046063 potassium chlorate Drugs 0.000 claims 1
- 229940080281 sodium chlorate Drugs 0.000 claims 1
- YEBAHVHZZBYXTG-UHFFFAOYSA-N sodium;hypofluorite Chemical compound [Na+].F[O-] YEBAHVHZZBYXTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 238000004090 dissolution Methods 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 21
- 150000003839 salts Chemical class 0.000 description 15
- 229910000420 cerium oxide Inorganic materials 0.000 description 14
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 229910052707 ruthenium Inorganic materials 0.000 description 9
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 7
- 150000007524 organic acids Chemical class 0.000 description 7
- 150000003304 ruthenium compounds Chemical class 0.000 description 7
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 150000002391 heterocyclic compounds Chemical group 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000003755 preservative agent Substances 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 229910000820 Os alloy Inorganic materials 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 4
- KXDAEFPNCMNJSK-UHFFFAOYSA-N Benzamide Chemical compound NC(=O)C1=CC=CC=C1 KXDAEFPNCMNJSK-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000003429 antifungal agent Substances 0.000 description 4
- 229940121375 antifungal agent Drugs 0.000 description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- SRPSOCQMBCNWFR-UHFFFAOYSA-N iodous acid Chemical compound OI=O SRPSOCQMBCNWFR-UHFFFAOYSA-N 0.000 description 4
- 239000011164 primary particle Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
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- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
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- KYPIPCWVZKRJDD-UHFFFAOYSA-N benzotriazole-1-carboxylic acid Chemical compound C1=CC=C2N(C(=O)O)N=NC2=C1 KYPIPCWVZKRJDD-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- OHJMTUPIZMNBFR-UHFFFAOYSA-N biuret Chemical compound NC(=O)NC(N)=O OHJMTUPIZMNBFR-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- CNWSQCLBDWYLAN-UHFFFAOYSA-N butylurea Chemical compound CCCCNC(N)=O CNWSQCLBDWYLAN-UHFFFAOYSA-N 0.000 description 1
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 description 1
- ZUKFMWLYNRZZEH-UHFFFAOYSA-N calcium;dihypofluorite Chemical compound [Ca+2].F[O-].F[O-] ZUKFMWLYNRZZEH-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 description 1
- 125000005708 carbonyloxy group Chemical group [*:2]OC([*:1])=O 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229940106189 ceramide Drugs 0.000 description 1
- ZVEQCJWYRWKARO-UHFFFAOYSA-N ceramide Natural products CCCCCCCCCCCCCCC(O)C(=O)NC(CO)C(O)C=CCCC=C(C)CCCCCCCCC ZVEQCJWYRWKARO-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- SFZULDYEOVSIKM-UHFFFAOYSA-N chembl321317 Chemical compound C1=CC(C(=N)NO)=CC=C1C1=CC=C(C=2C=CC(=CC=2)C(=N)NO)O1 SFZULDYEOVSIKM-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 description 1
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- 239000013078 crystal Substances 0.000 description 1
- 150000001923 cyclic compounds Chemical group 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000006612 decyloxy group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
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- 229940113088 dimethylacetamide Drugs 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
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- 239000012153 distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
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- 238000007429 general method Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- PKWIYNIDEDLDCJ-UHFFFAOYSA-N guanazole Chemical compound NC1=NNC(N)=N1 PKWIYNIDEDLDCJ-UHFFFAOYSA-N 0.000 description 1
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- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- PGHMDPHPIKEYOG-UHFFFAOYSA-N iminomethylidenecyanamide Chemical compound N=C=NC#N PGHMDPHPIKEYOG-UHFFFAOYSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- IENZCGNHSIMFJE-UHFFFAOYSA-N indole-5-carboxylic acid Chemical compound OC(=O)C1=CC=C2NC=CC2=C1 IENZCGNHSIMFJE-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-N iso-quinoline Natural products C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 1
- 125000002462 isocyano group Chemical group *[N+]#[C-] 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
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- 235000011090 malic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
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- 125000001360 methionine group Chemical group N[C@@H](CCSC)C(=O)* 0.000 description 1
- QMPFMODFBNEYJH-UHFFFAOYSA-N methyl 1h-1,2,4-triazole-5-carboxylate Chemical compound COC(=O)C1=NC=NN1 QMPFMODFBNEYJH-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 1
- FQTCUKQMGGJRCU-UHFFFAOYSA-N n,n-diacetylacetamide Chemical compound CC(=O)N(C(C)=O)C(C)=O FQTCUKQMGGJRCU-UHFFFAOYSA-N 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- VVGIYYKRAMHVLU-UHFFFAOYSA-N newbouldiamide Natural products CCCCCCCCCCCCCCCCCCCC(O)C(O)C(O)C(CO)NC(=O)CCCCCCCCCCCCCCCCC VVGIYYKRAMHVLU-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002892 organic cations Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 125000003355 oxamoyl group Chemical group C(C(=O)N)(=O)* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- IHLAQQPQKRMGSS-UHFFFAOYSA-N oxiracetam Chemical compound NC(=O)CN1CC(O)CC1=O IHLAQQPQKRMGSS-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000005740 oxycarbonyl group Chemical group [*:1]OC([*:2])=O 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 125000005328 phosphinyl group Chemical group [PH2](=O)* 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 1
- FPOLWERNILTNDK-UHFFFAOYSA-N pyruvamide Chemical compound CC(=O)C(N)=O FPOLWERNILTNDK-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- DUIOPKIIICUYRZ-UHFFFAOYSA-N semicarbazide Chemical compound NNC(N)=O DUIOPKIIICUYRZ-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- UQDJGEHQDNVPGU-UHFFFAOYSA-N serine phosphoethanolamine Chemical compound [NH3+]CCOP([O-])(=O)OCC([NH3+])C([O-])=O UQDJGEHQDNVPGU-UHFFFAOYSA-N 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- 125000000446 sulfanediyl group Chemical group *S* 0.000 description 1
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 150000003866 tertiary ammonium salts Chemical class 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N tetrahydropyrrole Substances C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- CBDKQYKMCICBOF-UHFFFAOYSA-N thiazoline Chemical compound C1CN=CS1 CBDKQYKMCICBOF-UHFFFAOYSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本發明係提供一種適於研磨具有含有IV族材料之層之研磨對象物,且可防止IV族材料溶解之研磨用組成物。
本發明係一種研磨用組成物,其含有含鹵原子之氧化劑及含醯胺鍵之有機化合物。
Description
本發明係關於研磨用組成物。
近年來,隨著LSI之高積體化、高性能化已開發新的微細加工技術。化學機械研磨(以下亦簡稱為CMP)法亦為其一種,係於LSI製造步驟,尤其是多層配線形成步驟中之層間絕緣膜之平坦化、金屬柱塞形成、埋入配線(鑲嵌(damascene)配線)形成中頻繁被利用之技術。該技術已揭示於例如美國專利第4944836號說明書中。鑲嵌配線技術可簡化配線步驟,或提高良率及信賴性,認為爾後會擴大其應用。
高速邏輯裝置(logic device)中,作為鑲嵌配線目前由於為低電阻故主要使用銅作為配線金屬,銅被認為在今後以DRAM為代表之記憶體裝置中亦將被廣泛使用。金屬CMP之一般方法係將研磨墊貼附於圓形之研磨壓盤(platen)上,以研磨劑浸漬研磨墊表面,且壓抵向基板之形成金屬膜之面,於自其背面施加特定壓力(以下亦簡稱為研磨壓力)之狀態下旋轉研磨壓盤,藉由研磨劑與
金屬膜之凸部之機械摩擦,而去除凸部之金屬膜者。
另一方面,於配線之銅或銅合金等之下層形成鉭、鉭合金、或鉭化合物等作為用於防止銅對層間絕緣膜中之擴散之障壁層。因此,埋入銅或銅合金之配線部分以外,有必要藉由CMP去除露出之障壁層。然而,障壁層相較於銅或銅合金一般硬度較高,故使用銅或銅合金用之研磨材料之組合之CMP大多情況無法獲得充分之CMP速度。
另一方面,作為障壁層使用之鉭、鉭合金、或鉭化合物等難以化學安定地蝕刻,且由於硬度高故即使機械研磨亦不像銅或銅合金那般容易。此外,近年來,已檢討釕、釕合金、釕化合物等貴金屬材料作為障壁層用之材料。釕、釕合金、釕化合物等貴金屬材料之電阻率低於鉭、鉭合金、鉭化合物,而可藉化學氣相成長法(CVD)成膜,就可對應於細微寬度之配線方面而言較優異。然而,釕、釕合金、或釕化合物等貴金屬材料與鉭、鉭合金、或鉭化合物同樣,為化學安定且硬度高,故難以研磨。
又,貴金屬材料係使用於例如DRAM電容器構造之製造步驟中之電極材料。而且,於去除由含有如釕單質體或氧化釕(RuOx)之貴金屬之材料所成之部分的一部分時,係使用研磨用組成物利用研磨而進行。然而,與前述障壁層用之貴金屬材料同樣地,於去除含有化學安定的貴金屬之材料時一般較花費時間,故對於該種研磨用組成物之進一步改良以提高處理量之需求強烈。
CMP中所用之研磨劑一般包含氧化劑及研磨粒。由該CMP用研磨劑進行之CMP之基本機制認為係首先,以氧化劑使金屬膜表面氧化,且以研磨粒削除所得金屬膜表面之氧化層者。凹部之金屬膜表面之氧化層不太碰觸到研磨墊,達不到利用研磨粒之削除效果,故與CMP之進行一起去除凸部之金屬膜使基板表面平坦化。
CMP中,要求對配線金屬的高研磨速率、研磨速率之安定性及研磨表面之低缺陷密度。然而,含釕之膜由於比如銅、鉭之其他鑲嵌配線金屬膜更為化學安定且為高硬度,故難以研磨。作為含該貴金屬之膜,尤其是含釕之膜的研磨液,於例如日本特開2004-172326號公報中提案含有研磨粒、氧化劑及苯并三唑之研磨液。
且,作為降低電晶體之消耗電力或提高性能(動作特性)之技術之一,已進行提高載子之移動度之高移動度通道材料之檢討。該等提高載子之輸送特性之通道由於提高導通之汲極電流,故一方面獲得充分之導通電流,一方面降低電源電壓。該組合獲得在低電力下之更高MOSFET(金屬氧化物半導體場效電晶體(metal oxide semiconductor field-effect transistor))之性能。
高移動度通道材料期待應用僅由III-V族化合物、IV族化合物、Ge(鍺)、C(碳)所成之石墨烯等。目前,III-V族化合物通道之形成由於存在有無法確立能提高通道之結晶性、良好地進行形狀之控制.成長之技術的課題,故對於比III-V族化合物更易於導入之IV族化合
物,尤其是SiGe與Ge等積極地進行檢討。
使用高移動度材料之通道可對具有IV族化合物通道、及/或Ge通道(以下亦稱為Ge材料部分)與含矽材料之部分(以下亦稱為矽材料部分)之研磨對象物進行研磨而形成。此時,除了以高的研磨速率研磨Ge材料部分以外,亦要求在研磨對象物研磨後之表面不產生因蝕刻造成之階差。例如,日本特開2010-130009號公報(美國專利申請公開第2010/130012號說明書)及日本特表2010-519740號公報(美國專利申請公開第2011/117740號說明書)中揭示於研磨Ge基板之用途中使用之研磨用組成物。
然而,日本特開2010-130009號公報(美國專利申請公開第2010/130012號說明書)及日本特表2010-519740號公報(美國專利申請公開第2011/117740號說明書)中記載之研磨用組成物原先係基於研磨Ge基板而設計,對於具有含Ge作為材料之層之研磨對象物之應用有困難。尤其,無法防止Ge之溶解,存在難以抑制Ge材料部分之凹陷發生之問題。
因此本發明之目的係提供一種適合具有含有IV族材料之層之研磨對象物之研磨,且可防止IV族材料溶解之研磨用組成物。
為解決上述課題,本發明人重複積極研究。結果,發現藉由含有含鹵原子之氧化劑、與含醯胺鍵之有機
化合物之研磨用組成物可解決上述課題。而且,基於上述見解,終於完成本發明。
亦即,本發明係一種研磨用組成物,其含有含鹵原子之氧化劑、及含醯胺鍵之有機化合物。
本發明係一種研磨用組成物,其含有含鹵原子之氧化劑、及含醯胺鍵之有機化合物。藉由成為該構成,而成為適於具有含有IV族材料之層之研磨對象物之研磨,且可防止IV族材料之溶解之研磨用組成物。
藉由本發明之研磨用組成物如何獲得上述之效果,詳細並不清楚,但認為係含有醯胺鍵之有機化合物扮演抑制含鹵原子之氧化劑之分解,且形成保護含有IV族材料之層之保護膜的角色之故。又,該機制為推測者,本發明並不受上述機制之任何限制。
本發明之研磨對象物並無特別限制,但可較佳地用於研磨具有含有IV族材料之層之研磨對象物之用途。更詳細而言,係於研磨該研磨對象物而製造基板之用途中使用。IV族材料之例列舉為Ge(鍺)、SiGe(矽鍺)等。
接著,針對本發明之研磨用組成物之構成加以詳細說明。
本發明使用之氧化劑含有鹵原子。該氧化劑之具體例列舉為例如鹵酸及其鹽、亞氯酸(HClO2)、亞溴酸(HBrO2)、亞碘酸(HIO2)、亞氯酸鈉(NaClO2)、亞氯酸鉀(KClO2)、亞溴酸鈉(NaBrO2)、亞溴酸鉀(KBrO2)等之亞鹵酸或其鹽;氯酸鈉(NaClO3)、氯酸鉀(KClO3)、氯酸銀(AgClO3)、氯酸鋇(Ba(ClO3)2)、溴酸鈉(NaBrO3)、溴酸鉀(KBrO3)、碘酸鈉(NaIO3)等鹵酸或其鹽;過氯酸(HClO4)、過溴酸(HBrO4)、過碘酸(HIO4)、過碘酸鈉(NaIO4)、過碘酸鉀(KIO4)、過碘酸四丁基銨((C4H9)4NIO4)等之過鹵酸或其鹽;次氟酸(HFO)、次氯酸(HClO)、次溴酸(HBrO)、次碘酸(HIO)等次鹵酸;次氟酸鋰(LiFO)、次氟酸鈉(NaFO)、次氟酸鉀(KFO)、次氟酸鎂(Mg(FO)2)、次氟酸鈣(Ca(FO)2)、次氟酸鋇(Ba(FO)2)等次氟酸之鹽;次氯酸鋰(LiClO)、次氯酸鈉(NaClO)、次氯酸鉀(KClO)、次氯酸鎂(Mg(ClO)2)、次氯酸鈣(Ca(ClO)2)、次氯酸鋇(Ba(ClO)2)、次氯酸第三丁酯(t-BuClO)、次氯酸銨(NH4ClO)、次氯酸三乙醇胺((CH2CH2OH)3N.ClO)等之次氯酸之鹽;次溴酸鋰(LiBrO)、次溴酸鈉(NaBrO)、次溴酸鉀(KBrO)、次溴酸鎂(Mg(BrO)2)、次溴酸鈣(Ca(BrO)2)、次溴酸鋇(Ba(BrO)2)、次溴酸銨(NH4BrO)、次溴酸三乙醇胺((CH2CH2OH)3N.BrO)等之次溴酸之鹽;次碘酸鋰(LiIO)、次碘酸鈉(NaIO)、次碘酸鉀(KIO)、次碘酸鎂(Mg(IO)2)、次碘酸鈣(Ca(IO)2)、次碘酸鋇(Ba(IO)2)、次碘
酸銨(NH4IO)、次碘酸三乙醇胺((CH2CH2OH)3N.IO)等之次碘酸之鹽等。該等含鹵原子之氧化劑可單獨使用或亦可混合2種以上使用。
該等含鹵原子之氧化劑中,以亞氯酸、次氯酸、氯酸、過氯酸及該等之鹽較佳。至於鹽可選擇銨鹽、鈉鹽、鉀鹽等。
本發明之研磨用組成物中之氧化劑濃度之下限較好為0.0001質量%以上,更好為0.001質量%以上,又更好為0.005質量%以上。此外,本發明之研磨用組成物中之氧化劑濃度之上限較好未達0.5質量%,更好為0.4質量%以下,又更好為0.3質量%以下。若為該範圍,則可抑制含有IV族材料之層之過度溶解,並且獲得高的研磨速率,可有效地進行加工。
本發明之研磨用組成物含有含醯胺鍵之有機化合物。該有機化合物為分子中具有以-CO-NR-(CO之部分為雙鍵)表示之醯胺鍵之化合物。藉由含該有機化合物,可發揮抑制本發明之研磨用組成物中所含之氧化劑之分解,且形成保護含有IV族材料之層之保護膜之角色,故可防止IV族材料之溶解。
該等有機化合物之例列舉為例如於上述鍵之兩末端具有官能基之化合物、於上述鍵之一末端鍵結有環狀化合物之化合物、上述兩末端之官能基為氫之脲及脲衍生
物等。具體例列舉為乙醯胺、丙二醯胺、丁二醯胺、馬來醯胺、富馬醯胺、苯甲醯胺、萘甲醯胺、鄰苯二甲醯胺、間苯二甲醯胺、對苯二甲醯胺、菸鹼醯胺、異菸鹼醯胺、甲醯胺、N-甲基甲醯胺、丙醯胺、丁醯胺、異丁醯胺、丙烯醯胺、甲基丙烯醯胺、棕櫚醯胺、硬脂醯胺、油醯胺、草醯胺、榖胺醯胺、己二醯胺、桂皮醯胺、二醇醯胺、乳醯胺、甘油醯胺、酒石醯胺(tartaramide)、神經醯胺(citramide)、乙醛醯胺(glyoxylamide)、丙酮醯胺(pyruvamide)、乙醯基乙醯胺、二甲基乙醯胺、苯甲醯胺、鄰胺基苯甲醯胺、乙二胺四乙醯胺、二乙醯胺、三乙醯胺、二苯甲醯胺、三苯甲醯胺、羅單寧(rhodanine)、脲、1-乙醯基-2-硫脲、縮二脲(biuret)、丁基脲、二丁基脲、1,3-二甲基脲、1,3-二乙基脲及該等之衍生物等。
有,列舉具有以下述通式(1)或通式(2)表示之構造之化合物。
其中,上述通式(1)中,R1表示氫原子、羥
基、醛基、羰基、羧基、胺基、亞胺基、偶氮基、硝基、亞硝基、硫醇基、磺酸基、磷酸基、鹵基、烷基(直鏈、分支、環狀之烷基,包含雙環烷基、活性次甲基(methine))、芳基、或醯基。該等官能基可未取代亦可經取代。通式(1)中,R2表示具有2個以上碳原子之雜環式構造。該等官能基可為未取代或經取代。
取代基並無特別限制,列舉為例如以下者。
鹵原子(氟原子、氯原子、溴原子或碘原子)、烷基(直鏈、分支或環狀烷基,包含雙環烷基、活性次甲基)、烯基、炔基、芳基、雜環基(不管取代位置)、醯基、烷氧基羰基、芳基氧基羰基、雜環氧基羰基、胺甲醯基、N-羥基胺甲醯基、N-醯基胺甲醯基、N-磺醯基胺甲醯基、N-胺甲醯基胺甲醯基、硫胺甲醯基、N-胺磺醯基胺甲醯基、咔唑基、羧基或其鹽、草醯基、胺基草醯基(oxamoyl)、氰基、碳二醯亞胺基、甲醯基、羥基、烷氧基(包含重複含有伸乙基氧基或伸丙基氧基單位之基)、芳氧基、雜環氧基、醯氧基、(烷氧基或芳氧基)羰基氧基、胺甲醯氧基、磺醯氧基、胺基、(烷基、芳基或雜環)胺基、醯基胺基、磺醯胺基、脲基、硫脲基、N-羥基脲基、醯亞胺基、(烷氧基或芳氧基)羰基胺基、胺磺醯基胺基、胺基脲(semicarbazide)基、硫胺基脲基、聯胺基、銨基(ammonio)、胺基草醯基胺基、N-(烷基或芳基)磺醯基脲基、N-醯基脲基、N-醯基胺磺醯基胺基、羥基胺基、硝基、含4級化氮原子之雜環基(例如吡啶鎓基、咪唑鎓
基、喹啉鎓基、異喹啉鎓基)、異氰基(isocyano)、亞胺基、巰基、(烷基、芳基或雜環)硫基、(烷基、芳基或雜環)二硫基、(烷基或芳基)磺醯基、(烷基或芳基)亞磺醯基、磺基或其鹽、胺磺醯基、N-醯基胺磺醯基、N-磺醯基胺磺醯基或其鹽、膦基、氧膦基(phosphinyl)、氧膦基氧基、氧膦基胺基、矽烷基等。
又其中,所謂活性次甲基意指以2個拉電子基取代之次甲基,此處所謂拉電子基意指醯基、烷氧基羰基、芳氧基羰基、胺甲醯基、烷基磺醯基、芳基磺醯基、胺磺醯基、三氟甲基、氰基、硝基、碳醯亞胺基。此處2個拉電子基亦可相互鍵結成為環構造。此外,所謂鹽意指鹼金屬、鹼土類金屬、重金屬等陽離子、或銨離子、鏻離子等之有機陽離子。
該等取代基亦可經與上述相同之取代基進一步取代。
以上述通式(1)表示之化合物之具體例列舉為例如2-吡咯啶酮、1-甲基-2-吡咯啶酮、1-乙基-2-吡咯啶酮、5-甲基-2-吡咯啶酮、1-(2-羥基甲基)-2-吡咯啶酮、1-(2-羥基乙基)-2-吡咯啶酮、1-(氯甲基)-2-吡咯啶酮、1-乙醯基-2-吡咯啶酮、5-硫代吡咯啶-2-酮、焦穀胺酸(pyroglutamic acid)(D型、L型、DL型)、L-焦穀胺酸甲酯、焦穀胺酸乙酯、琥珀醯亞胺、N-溴琥珀醯亞胺、N-氯琥珀醯亞胺、N-碘琥珀醯亞胺、N-羥基琥珀醯亞胺、N-甲基琥珀醯亞胺、N-苯基琥珀醯亞胺、N-甲基-2-苯基琥珀
醯亞胺、2-乙基-2-甲基琥珀醯亞胺、六氫鄰苯二甲醯亞胺、連苯四酸二醯亞胺、六氫鄰苯二甲醯亞胺、2-氧代吡咯啶-1-乙醯胺、1-甲基-5-氧代-2-吡咯啶乙酸、2-(2-氧代吡咯啶-1-基)丁烷醯胺、5-甲氧基吡咯啶-2-酮、2-(3-甲基-2,5-二氧代吡咯啶-1-基)丙-1-烯酸甲酯(versimide)、4-羥基-2-氧代-1-吡咯啶乙醯胺、4-羥基-2-吡咯啶酮、1-羥基-3-胺基-2-吡咯啶酮、1-(2-羥基乙基)-2-吡咯啶酮、2-吡咯啶酮-5-羧酸、1,2-二氫-3H-吡咯嗪(pyrrolizine)-3-酮等。
其中,上述通式(2)中,R3及R4各自獨立表示氫原子、羥基、醛基、羰基、羧基、胺基、亞胺基、偶氮基、硝基、亞硝基、硫醇基、磺酸基、磷酸基、鹵基、烷基(直鏈、分支、環狀之烷基,包含雙環烷基、活性次甲基)、芳基或醯基。該等官能基可未取代亦可經取代。n表示重複單位之數。
例如,以通式(2)表示之化合物之具體例列舉為聚-N-乙烯基乙醯胺等。
該等含醯胺鍵之有機化合物可單獨使用或亦可
混合2種以上使用。
本發明之研磨用組成物中之含醯胺鍵之有機化合物之含量下限較好為0.001質量%以上,更好為0.01質量%以上,又更好為0.1質量%以上。又,本發明之研磨用組成物中之含醯胺鍵之有機化合物之含量之上限較好為20質量%以下,更好為10質量%以下,又更好為5質量%以下。若為該範圍,則可抑制氧化劑之分解,且進一步提高形成保護含有IV族材料之層之保護膜之效果。
本發明之研磨用組成物較好進一步含有研磨粒。研磨粒具有機械研磨研磨對象物之作用,且提高研磨用組成物對研磨對象物的研磨速率。
本發明中使用之研磨粒並無特別限制,具體例列舉為例如由二氧化矽、氧化鋁、氧化鋯、氧化鈦等金屬氧化物所成之粒子。該研磨粒可單獨使用或亦可混合2種以上使用。此外,該研磨粒可使用市售品亦可使用合成品。
該等研磨粒中以二氧化矽粒子較佳,最好為膠體二氧化矽。
研磨粒亦可經表面修飾。通常之膠體二氧化矽由於在酸性條件下之Zeta電位值接近於零,故在酸性條件下二氧化矽粒子彼此間不會靜電排斥而容易引起凝聚。相對於此,即使在酸性條件下具有Zeta電位較大之負值
之經表面修飾之研磨粒,在酸性條件下相互間強烈排斥而良好分散之結果,提高了研磨用組成物之保存安定性。如此之表面修飾研磨粒可藉由例如使鋁、鈦或鋯等金屬或該等之氧化物與研磨粒混合而摻雜於研磨粒之表面而獲得。
其中,最好為固定化有有機酸之膠體二氧化矽。有機酸對研磨用組成物中所含之膠體二氧化矽表面之固定化係藉由例如使有機酸之官能基化學鍵結於膠體二氧化矽表面而進行。僅單使膠體二氧化矽與有機酸共存,無法發揮有機酸對膠體二氧化矽之固定化。若使有機酸之一種的磺酸固定化於膠體二氧化矽上,則可藉例如”Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups",Chem.Commun.246-247(2003)中所記載之方法進行。具體而言,使3-巰丙基三甲氧基矽烷等之具有硫醇基之矽烷偶合劑偶合於膠體二氧化矽上後,以過氧化氫使硫醇基氧化,藉此可獲得磺酸固定化於表面之膠體二氧化矽。或者,若使羧酸固定化於膠體二氧化矽上,則可藉例如”Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel”,Chemistry Letters,3,228-229(2000)中所記載之方法進行。具體而言,在將含有光反應性2-硝基苄酯之矽烷偶合劑偶合於膠體二氧化矽後,藉由光照射,可獲得使羧酸固定化於表面之膠體二氧化矽。
研磨粒之平均一次粒徑之下限較好為5nm以
上,更好為7nm以上,又更好為10nm以上。且,研磨粒之平均一次粒徑之上限較好為500nm以下,更好為300nm以下,又更好為200nm以下。若為該範圍,則研磨用組成物對研磨對象物之研磨速率獲得提高,且,可進一步抑制使用研磨用組成物研磨後之研磨對象物表面產生凹陷。又,研磨粒之平均一次粒徑係採用基於以BET法測定之研磨粒之比表面積算出。
研磨用組成物中之研磨粒之含量(濃度)下限較好為0.0002g/L以上,更好為0.002g/L以上,又更好為0.02g/L以上。另外,研磨用組成物中之研磨粒之含量(濃度)上限較好為200g/L以下,更好為100g/L以下,又更好為50g/L以下。若在該範圍,則一方面可抑制成分,一方面獲得高的研磨速率,且可有效地進行加工。
本發明之研磨用組成物之pH較好為5以上,更好為7以上。且,本發明之研磨用組成物之pH較好為12以下,更好為10以下。若為該範圍,則可抑制研磨對象物之過度溶解並且有效地實施研磨。
前述pH可藉由適量添加pH調節劑加以調整。用於將研磨用組成物之pH調整至期望之值而視需要使用之pH調整劑可為酸或鹼之任一種,且,亦可為無機化合物及有機化合物之任一種。酸之具體例列舉為例如硫酸、硝酸、硼酸、碳酸、次亞磷酸、亞磷酸及磷酸等無機
酸;甲酸、乙酸、丙酸、丁酸、戊酸、2-甲基丁酸、正己酸、3,3-二甲基丁酸、2-乙基丁酸、4-甲基戊酸、正庚酸、2-甲基己酸、正辛酸、2-乙基己酸、苯甲酸、乙醇酸、水楊酸、甘油酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、馬來酸、鄰苯二甲酸、蘋果酸、酒石酸、檸檬酸及乳酸等之羧酸,以及甲烷磺酸、乙烷磺酸及羥乙磺酸等有機硫酸等之有機酸等。鹼之具體例列舉為氫氧化鈉、氫氧化鉀等鹼金屬之氫氧化物、氨、乙二胺及哌啶等之胺,以及四甲基銨及四乙基銨等之4級銨鹽。該等pH調節劑可單獨使用或亦可混合2種以上使用。
本發明之研磨用組成物較好含有水作為用以使各成分分散或溶解之分散介質或溶劑。就抑制阻礙其他成分之作用之觀點而言,較好為儘可能不含雜質之水,具體而言較好為以離子交換樹脂去除雜質離子後,通過過濾器去除異物之純水或超純水、或蒸餾水。
本發明之研磨用組成物亦可視需要進一步含有金屬防腐蝕劑、防腐劑、防黴劑、水溶性高分子、用以使難溶性之有機物溶解之有機溶劑等其他成分。以下針對較佳之其他成分之金屬防腐蝕劑、防腐劑、及防黴劑加以說明。
藉由於研磨用組成物中添加金屬防腐蝕劑,可進一步抑制因使用研磨用組成物研磨而在配線之側邊產生凹陷。另外,可進一步抑制使用研磨用組成物研磨後在研磨對象物之表面產生凹陷。
可使用之金屬防腐蝕劑並無特別限制,但較好為雜環式化合物或界面活性劑。雜環式化合物中之雜環之員數並無特別限制。且,雜環式化合物可為單環化合物,亦可為具有縮合環之多環化合物。該金屬防腐蝕劑可單獨使用或混合2種以上使用。另外,該金屬防腐蝕劑可使用市售品,亦可使用合成品。
可作為金屬防腐蝕劑使用之雜環化合物之具體例列舉為例如吡咯化合物、吡唑化合物、咪唑化合物、三唑化合物、四唑化合物、吡啶化合物、哌啶化合物、嘧啶化合物、吡嗪化合物、吲哚嗪(indolizine)化合物、吲哚化合物、異吲哚化合物、吲唑化合物、嘌呤化合物、喹嗪(quinolizine)化合物、喹啉化合物、異喹啉化合物、萘啶化合物、酞嗪化合物、喹喔啉化合物、喹唑啉化合物、噌啉化合物、喋啶化合物、噻唑化合物、異噻唑化合物、噁唑化合物、異噁唑化合物、呋咱化合物等含氮雜環化合物。
若進一步列舉具體例,則吡唑化合物之例列舉為例如1H-吡唑、4-硝基-3-吡唑羧酸、3,5-吡唑羧酸、3-胺基-5-苯基吡唑、5-胺基-3-苯基吡唑、3,4,5-三溴吡唑、
3-胺基吡唑、3,5-二甲基吡唑、3,5-二甲基-1-羥基甲基吡唑、3-甲基吡唑、1-甲基吡唑、3-胺基-5-甲基吡唑、4-胺基-吡唑并[3,4-d]嘧啶、異嘌呤醇(allopurinol)、4-氯-1H-吡唑并[3,4-D]嘧啶、3,4-二羥基-6-甲基吡唑并(3,4-B)吡啶、6-甲基-1H-吡唑并[3,4-b]吡啶-3-胺等。
咪唑化合物之具體例列舉為例如咪唑、1-甲基咪唑、2-甲基咪唑、4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-異丙基咪唑、苯并咪唑、5,6-二甲基苯并咪唑、2-胺基苯并咪唑、2-氯苯并咪唑、2-甲基苯并咪唑、2-(1-羥基乙基)苯并咪唑、2-羥基苯并咪唑、2-苯基苯并咪唑、2,5-二甲基苯并咪唑、5-甲基苯并咪唑、5-硝基苯并咪唑、1H-嘌呤等。
三唑化合物之例列舉為例如1,2,3-三唑、1,2,4-三唑、1-甲基-1,2,4-三唑、甲基-1H-1,2,4-三唑-3-羧酸酯、1,2,4-三唑-3-羧酸、1,2,4-三唑-3-羧酸甲酯、1H-1,2,4-三唑-3-硫醇、3,5-二胺基-1H-1,2,4-三唑、3-胺基-1,2,4-三唑-5-硫醇、3-胺基-1H-1,2,4-三唑、3-胺基-5-苄基-4H-1,2,4-三唑、3-胺基-5-甲基-4H-1,2,4-三唑、3-硝基-1,2,4-三唑、3-溴-5-硝基-1,2,4-三唑、4-(1,2,4-三唑-1-基)苯酚、4-胺基-1,2,4-三唑、4-胺基-3,5-二丙基-4H-1,2,4-三唑、4-胺基-3,5-二甲基-4H-1,2,4-三唑、4-胺基-3,5-二庚基-4H-1,2,4-三唑、5-甲基-1,2,4-三唑-3,4-二胺、1H-苯并三唑、1-羥基苯并三唑、1-胺基苯并三唑、1-羧基苯并三唑、5-氯-1H-苯并三唑、5-硝基-1H-苯并三唑、5-羧基-
1H-苯并三唑、5-甲基-1H-苯并三唑、5,6-二甲基-1H-苯并三唑、1-(1’,2’-二羧基乙基)苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]-5-甲基苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]-4-甲基苯并三唑等。
四唑化合物之例列舉為例如1H-四唑、5-甲基四唑、5-胺基四唑、及5-苯基四唑等。
吲唑化合物之例列舉為例如1H-吲唑、5-胺基-1H-吲唑、5-硝基-1H-吲唑、5-羥基-1H-吲唑、6-胺基-1H-吲唑、6-硝基-1H-吲唑、6-羥基-1H-吲唑、3-羧基-5-甲基-1H-吲唑等。
吲哚化合物之具體例列舉為1H-吲哚、1-甲基-1H-吲哚、2-甲基-1H-吲哚、3-甲基-1H-吲哚、4-甲基-1H-吲哚、5-甲基-1H-吲哚、6-甲基-1H-吲哚、7-甲基-1H-吲哚、4-胺基-1H-吲哚、5-胺基-1H-吲哚、6-胺基-1H-吲哚、7-胺基-1H-吲哚、4-羥基-1H-吲哚、5-羥基-1H-吲哚、6-羥基-1H-吲哚、7-羥基-1H-吲哚、4-甲氧基-1H-吲哚、5-甲氧基-1H-吲哚、6-甲氧基-1H-吲哚、7-甲氧基-1H-吲哚、4-氯-1H-吲哚、5-氯-1H-吲哚、6-氯-1H-吲哚、7-氯-1H-吲哚、4-羧基-1H-吲哚、5-羧基-1H-吲哚、6-羧基-1H-吲哚、7-羧基-1H-吲哚、4-硝基-1H-吲哚、5-硝基-1H-吲哚、6-硝基-1H-吲哚、7-硝基-1H-吲哚、4-腈基-1H-吲哚、5-腈基-1H-吲哚、6-腈基-1H-吲哚、7-腈基-1H-吲哚、2,5-二甲基-1H-吲哚、1,2-二甲基-1H-吲哚、1,3-二甲
基-1H-吲哚、2,3-二甲基-1H-吲哚、5-胺基-2,3-二甲基-1H-吲哚、7-乙基-1H-吲哚、5-(胺基甲基)吲哚、2-甲基-5-胺基-1H-吲哚、3-羥基甲基-1H-吲哚、6-異丙基-1H-吲哚、5-氯-2-甲基-1H-吲哚等。
該等中較佳之雜環化合物為三唑化合物,最好為1H-苯并三唑、5-甲基-1H-苯并三唑、5,6-二甲基-1H-苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]-5-甲基苯并三唑、1-[N,N-雙(羥基乙基)胺基甲基]-4-甲基苯并三唑、1,2,3-三唑、及1,2,4-三唑。該等雜環化合物由於對研磨對象物表面之化學或物理之吸附力高,故可在研磨對象物之表面形成更堅固之保護膜。此在使用本發明之研磨用組成物研磨後對於提高研磨對象物之表面平坦性有利。
且,使用作為金屬防腐蝕劑之界面活性劑列舉為陰離子性界面活性劑、陽離子性界面活性劑、兩性界面活性劑及非離子性界面活性劑之任一種。
陰離子性界面活性劑之例列舉為聚氧伸乙基烷基醚乙酸、聚氧伸乙基烷基硫酸酯、烷基硫酸酯、聚氧伸乙基烷基醚硫酸、烷基醚硫酸、烷基苯磺酸、烷基磷酸酯、聚氧伸乙基烷基磷酸酯、聚氧伸乙基磺基琥珀酸、烷基磺基琥珀酸、烷基萘磺酸、烷基二苯基醚二磺酸、及該等之鹽等。
陽離子性界面活性劑之例列舉為例如烷基三甲基銨鹽、烷基二甲基銨鹽、烷基苄基二甲基銨鹽、及烷基胺鹽等。
兩性界面活性劑之例列舉為例如烷基甜菜鹼及烷基氧化胺等。
非離子性界面活性劑之例列舉為例如聚氧伸乙基烷基醚、聚氧伸烷基烷基醚、山梨糖醇酐脂肪酸酯、甘油脂肪酸酯、聚氧伸乙基脂肪酸酯、聚氧伸乙基烷基胺、及烷基烷醇醯胺等。
該等中較佳之界面活性劑為聚氧伸乙基烷基醚乙酸鹽、聚氧伸乙基烷基醚硫酸鹽、烷基醚硫酸鹽、及烷基苯磺酸鹽、及聚氧伸乙基烷基醚。該等界面活性劑由於對於研磨對象物表面之化學或物理性吸附力高,故可在研磨對象物表面形成更堅固之保護膜。此對於提高使用本發明之研磨用組成物研磨後之研磨對象物之表面之平坦性有利。
本發明中使用之防腐劑及防黴劑列舉為例如2-甲基-4-異噻唑啉-3-酮或5-氯-2-甲基-4-異噻唑啉-3-酮等之異噻唑啉系防腐劑,對羥基苯甲酸酯類、及苯氧基乙醇等。該等防腐劑及防黴劑可單獨使用或亦可混合2種以上使用。
本發明之研磨用組成物之製造方法並未特別限制,可藉由例如在水中攪拌混合含有鹵原子之氧化劑及含有醯胺鍵之有機化合物、及視需要之其他成分而得。
混合各成分時之溫度並無特別限制,較好為10~40℃,亦可加熱以提高溶解速度。又,混合時間亦無特別限制。
如上述,本發明之研磨用組成物係較好地使用於具有含有IV族材料之層之研磨對象物之研磨。因此,本發明提供以本發明之研磨用組成物研磨具有含有IV族材料之層之研磨對象物之研磨方法。另外,本發明提供包含以前述研磨方法具有含有IV族材料之層之研磨對象物之步驟之基板製造方法。
研磨裝置可使用安裝有保持具有研磨對象物之基板等之載具與可改變轉數之馬達等,且具有可貼附研磨墊(研磨布)之研磨壓盤之一般研磨裝置。
前述研磨墊可無特別限制的使用一般之不織布、聚胺基甲酸酯及多孔質氟樹脂等。研磨墊較好施以可使研磨液積存之溝槽加工。
研磨條件亦無特別限制,例如研磨壓盤之轉數較好為10~500rpm,對具有研磨對象物之基板施加之壓力(研磨壓力)較好為0.5~10psi。將研磨用組成物供給於研磨墊之方法亦無特別限制,例如可採用泵等連續供給之方法。其供給量並無限制,但較好隨時以本發明之研磨用組成物覆蓋研磨墊表面。
研磨結束後,在水流中洗淨基板,以旋轉乾燥
機等甩掉附著於基板上之水滴予以乾燥,而獲得具有含有IV族材料之層之基板。
使用以下實施例及比較例更詳細說明本發明。但,本發明之技術範圍並非僅限制於以下實施例。
(實施例1~9、比較例1~29)
以成為表1所示之組成物中之含量之方式添加表1所示含醯胺鍵之有機化合物。且,以在組成物中之含量計為0.03質量%之方式於水中混合攪拌次亞氯酸鈉之水溶液(濃度:5.9質量%)或過氧化氫水溶液(濃度:31質量%)作為氧化劑(混合溫度:約25℃,混合時間:約10分鐘),調製實施例1~9及比較例1~29之研磨用組成物。研磨用組成物之pH係添加氫氧化鉀(KOH)而調整,且以pH計確認。
殘留之氧化劑之比例(氧化劑殘留率)係針對保管前之研磨用組成物、與在25℃下保管7天後之研磨用組成物,使用平成15年9月29日日本厚生勞動省公告第318號之方法分別測定氧化劑之含量,且以下述式算出。
殘留之氧化劑之比例(%)=(保管後之研磨用組成物中之氧化劑之量)/(保管前之研磨用組成物中之氧化劑之量)×100
Ge基板之蝕刻速率係以浸漬條件:在43℃下浸漬
3cm×3cm之Ge基板5分鐘(邊使攪拌子以300rpm旋轉),由隨後之重量變化算出溶解量,且將其溶解量除以浸漬時間,測定Ge基板之蝕刻速率。
實施例1~9及比較例1~29之研磨用組成物之組成,以及Ge蝕刻速率及氧化劑殘留率之測定結果示於下述表1。
如由上述表1所了解,可知實施例1~9之研磨用組成物可抑制Ge之溶解。比較例2~3、及比較例8~13之研磨用組成物中,Ge蝕刻速率雖低,但氧化劑殘留率低,可知該等研磨用組成物會使氧化劑分解。
(實施例10~19、比較例30~46)
分別以下述表3所示之含量,在水中攪拌混合作為研磨粒之平均一次粒徑30nm、平均二次粒徑62nm之膠體二氧化矽、作為含鹵素之氧化劑之NaClO,作為含醯胺基之有機化合物之下述表3所記載之化合物(混合溫度:約25℃,混合時間:約10分鐘),調製實施例10~19及比較例30~46之研磨用組成物。研磨用組成物之pH係添加硝酸(HNO3)或氫氧化鉀(KOH),調整至pH8.5。
針對Ge基板及TEOS基板,求出使用實施例10~19及比較例30~46之研磨用組成物,以下述表2所示之研磨條件研磨一定時間時之研磨速度。使Ge基板[結晶方位(100)]單片(coupon)化為3cm×3cm而使用。Ge基板之研磨速度係由研磨前後之重量差值求出。且,TEOS基板之研磨速度係將使用光干涉式膜厚測定裝置測定之研磨前後之各自膜之厚度差除以研磨時間而求出。
[表2]
〈研磨條件〉
研磨裝置:桌上型研磨機ENGIS
研磨墊:發泡聚胺基甲酸酯製
研磨壓力:1.0psi(約6.9kpa)
研磨壓盤轉數:60rpm
研磨用組成物之供給:源源流出
漿料供給量:100ml/min
載具轉數:40rpm
進而,與上述同樣,亦針對實施例10~19、比較例30~46之研磨用組成物測定Ge蝕刻速率及氧化劑殘留率。該等評價結果示於下述表3。
如上述表3所示,可知使用實施例10~19之研磨用組成物時,可抑制Ge之溶解,且抑制氧化劑之分解而提高Ge基板之研磨速度。
又,本申請案係基於2014年3月31日申請之日本專利申請第2014-71918號,其揭示內容全文以參照加以援用。
Claims (8)
- 一種研磨用組成物,其係包含含鹵原子之氧化劑、及含醯胺鍵之有機化合物,其中前述含鹵原子之氧化劑係包含選自由亞氯酸、亞溴酸、亞碘酸、亞氯酸鈉、亞氯酸鉀、亞溴酸鈉、亞溴酸鉀、氯酸、氯酸鈉、氯酸鉀、氯酸銀、氯酸鋇、溴酸鈉、溴酸鉀、碘酸鈉、過氯酸、過溴酸、過碘酸、過碘酸鈉、過碘酸四丁基銨、次氟酸、次氯酸、次溴酸、次碘酸、次氟酸鋰、次氟酸鈉、次氟酸鉀、次氟酸鎂、次氟酸鈣、次氟酸鋇、次氯酸鋰、次氯酸鈉、次氯酸鎂、次氯酸鈣、次氯酸鋇、次氯酸第三丁酯、次氯酸銨、次氯酸三乙醇胺、次溴酸鋰、次溴酸鈉、次溴酸鉀、次溴酸鎂、次溴酸鈣、次溴酸鋇、次溴酸銨、次溴酸三乙醇胺、次碘酸鋰、次碘酸鈉、次碘酸鉀、次碘酸鎂、次碘酸鈣、次碘酸鋇、次碘酸銨及次碘酸三乙醇胺所成群組之至少一種,前述含醯胺鍵之有機化合物係包含具有以下述通式(1)或通式(2)表示之構造的化合物,
- 如請求項1之研磨用組成物,其中前述具有通式(1)表示之構造的化合物係包含選自由2-吡咯啶酮、1-甲基-2-吡咯啶酮、1-乙基-2-吡咯啶酮、5-甲基-2-吡咯啶酮、1-(2-羥基甲基)-2-吡咯啶酮、1-(2-羥基乙基)-2-吡咯啶酮、1-(氯甲基)-2-吡咯啶酮、1-乙醯基-2-吡咯啶酮、5-硫代吡咯啶-2-酮、D型焦穀胺酸(pyroglutamic acid)、L型型焦穀胺酸、DL型型焦穀胺酸、L-焦穀胺酸甲酯、焦穀胺酸乙酯、琥珀醯亞胺、N-溴琥珀醯亞胺、N-氯琥珀醯亞胺、 N-碘琥珀醯亞胺、N-羥基琥珀醯亞胺、N-甲基琥珀醯亞胺、N-苯基琥珀醯亞胺、N-甲基-2-苯基琥珀醯亞胺、2-乙基-2-甲基琥珀醯亞胺、六氫鄰苯二甲醯亞胺、連苯四酸二醯亞胺、六氫鄰苯二甲醯亞胺、2-氧代吡咯啶-1-乙醯胺、1-甲基-5-氧代-2-吡咯啶乙酸、2-(2-氧代吡咯啶-1-基)丁烷醯胺、5-甲氧基吡咯啶-2-酮、2-(3-甲基-2,5-二氧代吡咯啶-1-基)丙-1-烯酸甲酯(versimide)、4-羥基-2-氧代-1-吡咯啶乙醯胺、4-羥基-2-吡咯啶酮、1-羥基-3-胺基-2-吡咯啶酮、1-(2-羥基乙基)-2-吡咯啶酮、2-吡咯啶酮-5-羧酸及1,2-二氫-3H-吡咯嗪(pyrrolizine)-3-酮所成群組之至少一種。
- 如請求項1之研磨用組成物,其中前述具有通式(2)表示之構造的化合物係包含聚-N-乙烯基乙醯胺。
- 如請求項1~3中任一項之研磨用組成物,其中前述含鹵原子之氧化劑係包含次氯酸鈉。
- 如請求項1~3中任一項之研磨用組成物,其係在研磨具有包含IV族材料之層之研磨對象物的用途使用。
- 如請求項1~3中任一項之研磨用組成物,其進而含有研磨粒。
- 一種研磨方法,其係以如請求項1~6中任一項之研磨用組成物研磨具有包含IV族材料之層之研磨對象物。
- 一種基板之製造方法,其係包含以如請求項7之研磨方法研磨具有包含IV族材料之層之研磨對象物的步驟。
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