JP2006518940A5 - - Google Patents

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Publication number
JP2006518940A5
JP2006518940A5 JP2006503725A JP2006503725A JP2006518940A5 JP 2006518940 A5 JP2006518940 A5 JP 2006518940A5 JP 2006503725 A JP2006503725 A JP 2006503725A JP 2006503725 A JP2006503725 A JP 2006503725A JP 2006518940 A5 JP2006518940 A5 JP 2006518940A5
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JP
Japan
Prior art keywords
substrate
main surface
polishing
semiconductor
abrasive particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006503725A
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English (en)
Japanese (ja)
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JP2006518940A (ja
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Publication date
Priority claimed from US10/370,781 external-priority patent/US6910951B2/en
Application filed filed Critical
Publication of JP2006518940A publication Critical patent/JP2006518940A/ja
Publication of JP2006518940A5 publication Critical patent/JP2006518940A5/ja
Pending legal-status Critical Current

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JP2006503725A 2003-02-24 2004-02-19 化学機械的平坦化のための材料及び方法 Pending JP2006518940A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/370,781 US6910951B2 (en) 2003-02-24 2003-02-24 Materials and methods for chemical-mechanical planarization
PCT/US2004/004987 WO2004076126A1 (en) 2003-02-24 2004-02-19 Materials and methods for chemical-mechanical planarization

Publications (2)

Publication Number Publication Date
JP2006518940A JP2006518940A (ja) 2006-08-17
JP2006518940A5 true JP2006518940A5 (enExample) 2007-04-05

Family

ID=32868224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006503725A Pending JP2006518940A (ja) 2003-02-24 2004-02-19 化学機械的平坦化のための材料及び方法

Country Status (7)

Country Link
US (1) US6910951B2 (enExample)
EP (1) EP1599314A1 (enExample)
JP (1) JP2006518940A (enExample)
KR (1) KR20050107454A (enExample)
CN (1) CN1774316A (enExample)
TW (1) TWI316887B (enExample)
WO (1) WO2004076126A1 (enExample)

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JP6991130B2 (ja) * 2017-03-16 2022-01-12 Idec株式会社 研削液生成装置、研削液生成方法、研削装置および研削液
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
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CN109894930B (zh) * 2019-03-22 2021-06-25 湖南科技大学 一种缓释型柔性磨具及抛光方法
US11759909B2 (en) * 2020-06-19 2023-09-19 Sk Enpulse Co., Ltd. Polishing pad, preparation method thereof and method for preparing semiconductor device using same
US12138738B2 (en) * 2020-06-19 2024-11-12 Sk Enpulse Co., Ltd. Polishing pad, preparation method thereof and method for preparing semiconductor device using same
CN112740375B (zh) 2020-12-23 2023-02-10 长江存储科技有限责任公司 用于在形成半导体器件时抛光电介质层的方法
CN114686110A (zh) * 2020-12-30 2022-07-01 安集微电子科技(上海)股份有限公司 一种化学机械抛光液
CN113246016A (zh) * 2021-06-09 2021-08-13 广东工业大学 一种多层多功能cmp抛光垫及其制备方法和应用
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CN120693233A (zh) * 2023-03-22 2025-09-23 则武株式会社 研磨垫及其制造方法

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