JP2006518940A - 化学機械的平坦化のための材料及び方法 - Google Patents

化学機械的平坦化のための材料及び方法 Download PDF

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Publication number
JP2006518940A
JP2006518940A JP2006503725A JP2006503725A JP2006518940A JP 2006518940 A JP2006518940 A JP 2006518940A JP 2006503725 A JP2006503725 A JP 2006503725A JP 2006503725 A JP2006503725 A JP 2006503725A JP 2006518940 A JP2006518940 A JP 2006518940A
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Prior art keywords
polishing
substrate
semiconductor
conditioning
abrasive particles
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Japanese (ja)
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JP2006518940A5 (enExample
Inventor
バリジェパリ，スドハカール
ジェイ． アルドリッチ，デール
エー． グライアー，ローラ
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ダウ グローバル テクノロジーズ インコーポレイティド
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Publication of JP2006518940A publication Critical patent/JP2006518940A/ja
Publication of JP2006518940A5 publication Critical patent/JP2006518940A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP2006503725A 2003-02-24 2004-02-19 化学機械的平坦化のための材料及び方法 Pending JP2006518940A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/370,781 US6910951B2 (en) 2003-02-24 2003-02-24 Materials and methods for chemical-mechanical planarization
PCT/US2004/004987 WO2004076126A1 (en) 2003-02-24 2004-02-19 Materials and methods for chemical-mechanical planarization

Publications (2)

Publication Number Publication Date
JP2006518940A true JP2006518940A (ja) 2006-08-17
JP2006518940A5 JP2006518940A5 (enExample) 2007-04-05

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JP2006503725A Pending JP2006518940A (ja) 2003-02-24 2004-02-19 化学機械的平坦化のための材料及び方法

Country Status (7)

Country Link
US (1) US6910951B2 (enExample)
EP (1) EP1599314A1 (enExample)
JP (1) JP2006518940A (enExample)
KR (1) KR20050107454A (enExample)
CN (1) CN1774316A (enExample)
TW (1) TWI316887B (enExample)
WO (1) WO2004076126A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009113196A (ja) * 2007-08-29 2009-05-28 Applied Materials Inc 除去レートランプアップによる影響を減少し且つ欠陥レートを安定化するための柔軟パッド調整方法
JP2011171409A (ja) * 2010-02-17 2011-09-01 Disco Corp ウエーハの研磨方法
JP2014514971A (ja) * 2011-05-17 2014-06-26 イファ ダイヤモンド インダストリアル カンパニー，リミテッド Ｃｍｐパッドコンディショナーおよび前記ｃｍｐパッドコンディショナーの製造方法
KR101492297B1 (ko) * 2007-09-28 2015-02-11 후지보홀딩스가부시끼가이샤 연마 패드
KR20180064136A (ko) * 2016-12-05 2018-06-14 삼성전자주식회사 집적회로 소자 제조용 연마 패드의 제조 방법
JPWO2018168912A1 (ja) * 2017-03-16 2019-11-07 Ｉｄｅｃ株式会社 研削液生成装置、研削液生成方法、研削装置および研削液
JP2022002305A (ja) * 2020-06-19 2022-01-06 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッド、その製造方法およびこれを用いる半導体素子の製造方法
JP2022002306A (ja) * 2020-06-19 2022-01-06 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッド、その製造方法およびこれを用いる半導体素子の製造方法
KR20240009690A (ko) * 2022-07-14 2024-01-23 에프엔에스테크 주식회사 재생 연마패드
WO2024195369A1 (ja) * 2023-03-22 2024-09-26 ノリタケ株式会社 研磨パッド及びその製造方法

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6352595B1 (en) * 1999-05-28 2002-03-05 Lam Research Corporation Method and system for cleaning a chemical mechanical polishing pad
JP4345357B2 (ja) * 2003-05-27 2009-10-14 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
US6986284B2 (en) * 2003-08-29 2006-01-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. System and method for characterizing a textured surface
US7074115B2 (en) * 2003-10-09 2006-07-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad
US20050079451A1 (en) * 2003-10-09 2005-04-14 Doan Trung Tri Processes for treating a substrate and removing resist from a substrate
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US7335239B2 (en) * 2003-11-17 2008-02-26 Advanced Technology Materials, Inc. Chemical mechanical planarization pad
JP2007514553A (ja) * 2003-11-26 2007-06-07 スリーエム イノベイティブ プロパティズ カンパニー 工作物の研磨方法
US7294575B2 (en) * 2004-01-05 2007-11-13 United Microelectronics Corp. Chemical mechanical polishing process for forming shallow trench isolation structure
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
WO2006057720A1 (en) * 2004-11-29 2006-06-01 Rajeev Bajaj Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor
US20080318505A1 (en) * 2004-11-29 2008-12-25 Rajeev Bajaj Chemical mechanical planarization pad and method of use thereof
WO2006057713A2 (en) * 2004-11-29 2006-06-01 Rajeev Bajaj Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance
US20090061744A1 (en) * 2007-08-28 2009-03-05 Rajeev Bajaj Polishing pad and method of use
US20070224925A1 (en) * 2006-03-21 2007-09-27 Rajeev Bajaj Chemical Mechanical Polishing Pad
US7815778B2 (en) * 2005-11-23 2010-10-19 Semiquest Inc. Electro-chemical mechanical planarization pad with uniform polish performance
US7846008B2 (en) * 2004-11-29 2010-12-07 Semiquest Inc. Method and apparatus for improved chemical mechanical planarization and CMP pad
US7291280B2 (en) * 2004-12-28 2007-11-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride
JP4646638B2 (ja) * 2005-01-14 2011-03-09 株式会社リコー 表面研磨加工法及び加工装置
US7762871B2 (en) * 2005-03-07 2010-07-27 Rajeev Bajaj Pad conditioner design and method of use
US8398463B2 (en) * 2005-03-07 2013-03-19 Rajeev Bajaj Pad conditioner and method
KR20060099398A (ko) * 2005-03-08 2006-09-19 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 수계 연마 패드 및 제조 방법
US7494519B2 (en) * 2005-07-28 2009-02-24 3M Innovative Properties Company Abrasive agglomerate polishing method
US7169031B1 (en) 2005-07-28 2007-01-30 3M Innovative Properties Company Self-contained conditioning abrasive article
US20070049164A1 (en) * 2005-08-26 2007-03-01 Thomson Clifford O Polishing pad and method for manufacturing polishing pads
TW200720017A (en) * 2005-09-19 2007-06-01 Rohm & Haas Elect Mat Water-based polishing pads having improved adhesion properties and methods of manufacture
RU2354675C1 (ru) * 2005-09-30 2009-05-10 Сэнт-Гобэн Керамикс Енд Пластикс, Инк. Полировальная суспензия и способ полирования керамической детали
KR100697293B1 (ko) * 2005-10-04 2007-03-20 삼성전자주식회사 화학기계적 연마용 연마제 및 이를 이용한 화학기계적연마방법
MXPA05011412A (es) * 2005-10-21 2010-06-02 3M Mexico S A De C V Articulo abrasivo de limpieza que contiene un agente que promueve la creacion de espuma al contacto con agua de tratamiento de superficies.
US20070128991A1 (en) * 2005-12-07 2007-06-07 Yoon Il-Young Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
US20070141312A1 (en) * 2005-12-21 2007-06-21 James David B Multilayered polishing pads having improved defectivity and methods of manufacture
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
US7452264B2 (en) * 2006-06-27 2008-11-18 Applied Materials, Inc. Pad cleaning method
US20070295610A1 (en) * 2006-06-27 2007-12-27 Applied Materials, Inc. Electrolyte retaining on a rotating platen by directional air flow
US20080063856A1 (en) * 2006-09-11 2008-03-13 Duong Chau H Water-based polishing pads having improved contact area
JP5274647B2 (ja) * 2008-04-18 2013-08-28 サンーゴバン アブレイシブズ，インコーポレイティド 高空隙率研摩材物品およびその製造方法
JP5351967B2 (ja) 2008-08-28 2013-11-27 スリーエム イノベイティブ プロパティズ カンパニー 構造化研磨物品、その製造方法、及びウエハの平坦化における使用
DE102008059044B4 (de) * 2008-11-26 2013-08-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht
DE102009030298B4 (de) * 2009-06-24 2012-07-12 Siltronic Ag Verfahren zur lokalen Politur einer Halbleiterscheibe
TWI404596B (zh) * 2009-09-22 2013-08-11 San Fang Chemical Industry Co 製造研磨墊之方法及研磨墊
JP5617387B2 (ja) * 2010-07-06 2014-11-05 富士電機株式会社 垂直磁気記録媒体用基板の製造方法、および、該製造方法により製造される垂直磁気記録媒体用基板
SG11201606187RA (en) * 2010-09-08 2016-09-29 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
JP6091773B2 (ja) * 2012-06-11 2017-03-08 株式会社東芝 半導体装置の製造方法
US10226853B2 (en) 2013-01-18 2019-03-12 Applied Materials, Inc. Methods and apparatus for conditioning of chemical mechanical polishing pads
CN103252710B (zh) * 2013-04-08 2016-04-20 清华大学 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法
JP6088919B2 (ja) * 2013-06-28 2017-03-01 株式会社東芝 半導体装置の製造方法
EP3084339B1 (en) * 2013-12-18 2019-04-17 Covestro LLC Ballistic-resistant structural insulated panels
US9879474B2 (en) 2014-05-06 2018-01-30 Covestro Llc Polycarbonate based rapid deployment cover system
US11179822B2 (en) * 2017-08-31 2021-11-23 Hubei Dinghui Microelectronics Materials Co., Ltd Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material
US11697183B2 (en) 2018-07-26 2023-07-11 Taiwan Semiconductor Manufacturing Co., Ltd. Fabrication of a polishing pad for chemical mechanical polishing
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US20220396723A1 (en) * 2021-06-11 2022-12-15 Sponge-Jet, Inc. Abrasive media blends and related methods
IT202100019064A1 (it) * 2021-07-19 2023-01-19 Triulzi Cesare Special Equipments S R L Una macchina lucidatrice

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000117616A (ja) * 1998-08-11 2000-04-25 Hitachi Ltd 半導体装置の製造方法及び加工装置
JP2000164595A (ja) * 1998-11-26 2000-06-16 Nec Corp 金属配線形成方法
JP2001127022A (ja) * 1999-08-18 2001-05-11 Ebara Corp 研磨方法及び研磨装置
JP2001522729A (ja) * 1997-11-06 2001-11-20 ロデール ホールディングス インコーポレイテッド 研磨剤研磨システムを使用したメモリーディスクあるいは半導体デバイスの製造方法及び研磨パッド
JP2002079456A (ja) * 2000-06-20 2002-03-19 Toray Ind Inc 研磨パッド、研磨装置、およびそれを用いた研磨方法
JP2002313760A (ja) * 2001-04-05 2002-10-25 Samsung Electronics Co Ltd 化学機械的研磨スラリー、化学機械的研磨方法及びこれを採用する浅いトレンチ素子分離方法
WO2003007360A1 (en) * 2001-07-09 2003-01-23 Motorola, Inc. Method for chemical mechanical polishing (cmp) with altering the concentration of oxidizing agent in slurry
JP2003051469A (ja) * 2001-06-29 2003-02-21 Hynix Semiconductor Inc Ｃｍｐ用スラリー組成物、パターニング方法及び半導体素子

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1216651B (de) 1963-03-28 1966-05-12 Siemens Ag Verfahren zum polierenden Abtragen von einkristallinen Halbleiterkoerpern, insbesondere Halbleiterscheiben
DE2551094A1 (de) 1975-11-14 1977-05-26 Bayer Ag Verfahren zur herstellung von in wasser dispergierbaren polyurethanen
DE2651506C2 (de) 1976-11-11 1986-04-30 Bayer Ag, 5090 Leverkusen Verfahren zur Herstellung von in Wasser dispergierbaren Polyurethanen
US4841680A (en) * 1987-08-25 1989-06-27 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
US5234867A (en) 1992-05-27 1993-08-10 Micron Technology, Inc. Method for planarizing semiconductor wafers with a non-circular polishing pad
US5197999A (en) 1991-09-30 1993-03-30 National Semiconductor Corporation Polishing pad for planarization
US5287663A (en) 1992-01-21 1994-02-22 National Semiconductor Corporation Polishing pad and method for polishing semiconductor wafers
US6099394A (en) * 1998-02-10 2000-08-08 Rodel Holdings, Inc. Polishing system having a multi-phase polishing substrate and methods relating thereto
US5356513A (en) 1993-04-22 1994-10-18 International Business Machines Corporation Polishstop planarization method and structure
US5441598A (en) 1993-12-16 1995-08-15 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5516729A (en) 1994-06-03 1996-05-14 Advanced Micro Devices, Inc. Method for planarizing a semiconductor topography using a spin-on glass material with a variable chemical-mechanical polish rate
US6099954A (en) 1995-04-24 2000-08-08 Rodel Holdings, Inc. Polishing material and method of polishing a surface
JP3230986B2 (ja) 1995-11-13 2001-11-19 株式会社東芝 ポリッシング方法、半導体装置の製造方法及び半導体製造装置。
US5624303A (en) 1996-01-22 1997-04-29 Micron Technology, Inc. Polishing pad and a method for making a polishing pad with covalently bonded particles
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US6537137B2 (en) 1996-08-16 2003-03-25 Rodel Holdings, Inc Methods for chemical-mechanical polishing of semiconductor wafers
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
JP3722591B2 (ja) 1997-05-30 2005-11-30 株式会社日立製作所 研磨装置
US5919082A (en) 1997-08-22 1999-07-06 Micron Technology, Inc. Fixed abrasive polishing pad
ATE266071T1 (de) 1998-02-24 2004-05-15 Showa Denko Kk Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben
US6514301B1 (en) 1998-06-02 2003-02-04 Peripheral Products Inc. Foam semiconductor polishing belts and pads
US6475069B1 (en) 1999-10-22 2002-11-05 Rodel Holdings, Inc. Control of removal rates in CMP
US6302770B1 (en) 1998-07-28 2001-10-16 Nikon Research Corporation Of America In-situ pad conditioning for CMP polisher
JP3858462B2 (ja) 1998-07-30 2006-12-13 株式会社日立製作所 半導体装置の製造方法
US6095902A (en) 1998-09-23 2000-08-01 Rodel Holdings, Inc. Polyether-polyester polyurethane polishing pads and related methods
WO2000024842A1 (en) 1998-10-23 2000-05-04 Arch Specialty Chemicals, Inc. A chemical mechanical polishing slurry system having an activator solution
US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
AU760247B2 (en) 1998-12-29 2003-05-08 Dow Global Technologies Inc. Polyurethane foams prepared from mechanically frothed polyurethane dispersions
JP3760064B2 (ja) 1999-08-09 2006-03-29 株式会社日立製作所 半導体装置の製造方法及び半導体装置の平坦化加工装置
US6331135B1 (en) 1999-08-31 2001-12-18 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives
US6306008B1 (en) * 1999-08-31 2001-10-23 Micron Technology, Inc. Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization
US6364749B1 (en) 1999-09-02 2002-04-02 Micron Technology, Inc. CMP polishing pad with hydrophilic surfaces for enhanced wetting
JP2001077060A (ja) 1999-09-08 2001-03-23 Toshiba Corp 半導体装置の製造方法
US7015134B2 (en) 1999-11-02 2006-03-21 Advanced Micro Devices, Inc. Method for reducing anti-reflective coating layer removal during removal of photoresist
US6626740B2 (en) 1999-12-23 2003-09-30 Rodel Holdings, Inc. Self-leveling pads and methods relating thereto
US6419553B2 (en) 2000-01-04 2002-07-16 Rodel Holdings, Inc. Methods for break-in and conditioning a fixed abrasive polishing pad
US6368200B1 (en) 2000-03-02 2002-04-09 Agere Systems Guardian Corporation Polishing pads from closed-cell elastomer foam
US6416685B1 (en) 2000-04-11 2002-07-09 Honeywell International Inc. Chemical mechanical planarization of low dielectric constant materials
US6454634B1 (en) 2000-05-27 2002-09-24 Rodel Holdings Inc. Polishing pads for chemical mechanical planarization
US6709981B2 (en) 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
US6477926B1 (en) 2000-09-15 2002-11-12 Ppg Industries Ohio, Inc. Polishing pad
EP1211024A3 (en) 2000-11-30 2004-01-02 JSR Corporation Polishing method
US6478659B2 (en) 2000-12-13 2002-11-12 Promos Technologies, Inc. Chemical mechanical polishing method for slurry free fixed abrasive pads
US20020072307A1 (en) 2000-12-13 2002-06-13 Fruitman Clinton O. Apparatus and method for chemical mechanical planarization using a fixed-abrasive polishing pad
KR100394572B1 (ko) 2000-12-28 2003-08-14 삼성전자주식회사 복합특성을 가지는 씨엠피 패드구조와 그 제조방법
US6387807B1 (en) 2001-01-30 2002-05-14 Speedfam-Ipec Corporation Method for selective removal of copper

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001522729A (ja) * 1997-11-06 2001-11-20 ロデール ホールディングス インコーポレイテッド 研磨剤研磨システムを使用したメモリーディスクあるいは半導体デバイスの製造方法及び研磨パッド
JP2000117616A (ja) * 1998-08-11 2000-04-25 Hitachi Ltd 半導体装置の製造方法及び加工装置
JP2000164595A (ja) * 1998-11-26 2000-06-16 Nec Corp 金属配線形成方法
JP2001127022A (ja) * 1999-08-18 2001-05-11 Ebara Corp 研磨方法及び研磨装置
JP2002079456A (ja) * 2000-06-20 2002-03-19 Toray Ind Inc 研磨パッド、研磨装置、およびそれを用いた研磨方法
JP2002313760A (ja) * 2001-04-05 2002-10-25 Samsung Electronics Co Ltd 化学機械的研磨スラリー、化学機械的研磨方法及びこれを採用する浅いトレンチ素子分離方法
JP2003051469A (ja) * 2001-06-29 2003-02-21 Hynix Semiconductor Inc Ｃｍｐ用スラリー組成物、パターニング方法及び半導体素子
WO2003007360A1 (en) * 2001-07-09 2003-01-23 Motorola, Inc. Method for chemical mechanical polishing (cmp) with altering the concentration of oxidizing agent in slurry

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JP2011171409A (ja) * 2010-02-17 2011-09-01 Disco Corp ウエーハの研磨方法
JP2014514971A (ja) * 2011-05-17 2014-06-26 イファ ダイヤモンド インダストリアル カンパニー，リミテッド Ｃｍｐパッドコンディショナーおよび前記ｃｍｐパッドコンディショナーの製造方法
US9314901B2 (en) 2011-05-17 2016-04-19 Ehwa Diamond Industrial Co., Ltd. CMP pad conditioner, and method for producing the CMP pad conditioner
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KR20180064136A (ko) * 2016-12-05 2018-06-14 삼성전자주식회사 집적회로 소자 제조용 연마 패드의 제조 방법
JPWO2018168912A1 (ja) * 2017-03-16 2019-11-07 Ｉｄｅｃ株式会社 研削液生成装置、研削液生成方法、研削装置および研削液
JP2022002306A (ja) * 2020-06-19 2022-01-06 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッド、その製造方法およびこれを用いる半導体素子の製造方法
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JP2022002305A (ja) * 2020-06-19 2022-01-06 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッド、その製造方法およびこれを用いる半導体素子の製造方法
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WO2024195369A1 (ja) * 2023-03-22 2024-09-26 ノリタケ株式会社 研磨パッド及びその製造方法

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CN1774316A (zh) 2006-05-17
EP1599314A1 (en) 2005-11-30
US20040166779A1 (en) 2004-08-26
KR20050107454A (ko) 2005-11-11
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