CN1774316A - 用于化学机械平面化的材料和方法 - Google Patents
用于化学机械平面化的材料和方法 Download PDFInfo
- Publication number
- CN1774316A CN1774316A CNA2004800103002A CN200480010300A CN1774316A CN 1774316 A CN1774316 A CN 1774316A CN A2004800103002 A CNA2004800103002 A CN A2004800103002A CN 200480010300 A CN200480010300 A CN 200480010300A CN 1774316 A CN1774316 A CN 1774316A
- Authority
- CN
- China
- Prior art keywords
- major surface
- polishing
- substrate
- semiconductor
- abrasive particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/370,781 | 2003-02-24 | ||
| US10/370,781 US6910951B2 (en) | 2003-02-24 | 2003-02-24 | Materials and methods for chemical-mechanical planarization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1774316A true CN1774316A (zh) | 2006-05-17 |
Family
ID=32868224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2004800103002A Pending CN1774316A (zh) | 2003-02-24 | 2004-02-19 | 用于化学机械平面化的材料和方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6910951B2 (enExample) |
| EP (1) | EP1599314A1 (enExample) |
| JP (1) | JP2006518940A (enExample) |
| KR (1) | KR20050107454A (enExample) |
| CN (1) | CN1774316A (enExample) |
| TW (1) | TWI316887B (enExample) |
| WO (1) | WO2004076126A1 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103252710A (zh) * | 2013-04-08 | 2013-08-21 | 清华大学 | 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法 |
| CN103534790A (zh) * | 2011-05-17 | 2014-01-22 | 二和钻石工业股份有限公司 | Cmp垫调整器及用于制造cmp垫调整器的方法 |
| CN109894930A (zh) * | 2019-03-22 | 2019-06-18 | 湖南科技大学 | 一种缓释型柔性磨具及抛光方法 |
| CN110774167A (zh) * | 2018-07-26 | 2020-02-11 | 台湾积体电路制造股份有限公司 | 化学机械研磨垫的形成方法、化学机械研磨方法及其装置 |
| CN113246016A (zh) * | 2021-06-09 | 2021-08-13 | 广东工业大学 | 一种多层多功能cmp抛光垫及其制备方法和应用 |
| WO2022133789A1 (en) * | 2020-12-23 | 2022-06-30 | Yangtze Memory Technologies Co., Ltd. | Methods for polishing dielectric layer in forming semiconductor device |
| CN114686110A (zh) * | 2020-12-30 | 2022-07-01 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6352595B1 (en) * | 1999-05-28 | 2002-03-05 | Lam Research Corporation | Method and system for cleaning a chemical mechanical polishing pad |
| JP4345357B2 (ja) * | 2003-05-27 | 2009-10-14 | 株式会社Sumco | 半導体ウェーハの製造方法 |
| US6986284B2 (en) * | 2003-08-29 | 2006-01-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | System and method for characterizing a textured surface |
| US7074115B2 (en) * | 2003-10-09 | 2006-07-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad |
| US20050079451A1 (en) * | 2003-10-09 | 2005-04-14 | Doan Trung Tri | Processes for treating a substrate and removing resist from a substrate |
| US7247566B2 (en) * | 2003-10-23 | 2007-07-24 | Dupont Air Products Nanomaterials Llc | CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers |
| US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
| US7335239B2 (en) * | 2003-11-17 | 2008-02-26 | Advanced Technology Materials, Inc. | Chemical mechanical planarization pad |
| JP2007514553A (ja) * | 2003-11-26 | 2007-06-07 | スリーエム イノベイティブ プロパティズ カンパニー | 工作物の研磨方法 |
| US7294575B2 (en) * | 2004-01-05 | 2007-11-13 | United Microelectronics Corp. | Chemical mechanical polishing process for forming shallow trench isolation structure |
| JP4814502B2 (ja) * | 2004-09-09 | 2011-11-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| WO2006057720A1 (en) * | 2004-11-29 | 2006-06-01 | Rajeev Bajaj | Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor |
| US20080318505A1 (en) * | 2004-11-29 | 2008-12-25 | Rajeev Bajaj | Chemical mechanical planarization pad and method of use thereof |
| WO2006057713A2 (en) * | 2004-11-29 | 2006-06-01 | Rajeev Bajaj | Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance |
| US20090061744A1 (en) * | 2007-08-28 | 2009-03-05 | Rajeev Bajaj | Polishing pad and method of use |
| US20070224925A1 (en) * | 2006-03-21 | 2007-09-27 | Rajeev Bajaj | Chemical Mechanical Polishing Pad |
| US7815778B2 (en) * | 2005-11-23 | 2010-10-19 | Semiquest Inc. | Electro-chemical mechanical planarization pad with uniform polish performance |
| US7846008B2 (en) * | 2004-11-29 | 2010-12-07 | Semiquest Inc. | Method and apparatus for improved chemical mechanical planarization and CMP pad |
| US7291280B2 (en) * | 2004-12-28 | 2007-11-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| JP4646638B2 (ja) * | 2005-01-14 | 2011-03-09 | 株式会社リコー | 表面研磨加工法及び加工装置 |
| US7762871B2 (en) * | 2005-03-07 | 2010-07-27 | Rajeev Bajaj | Pad conditioner design and method of use |
| US8398463B2 (en) * | 2005-03-07 | 2013-03-19 | Rajeev Bajaj | Pad conditioner and method |
| KR20060099398A (ko) * | 2005-03-08 | 2006-09-19 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 수계 연마 패드 및 제조 방법 |
| US7494519B2 (en) * | 2005-07-28 | 2009-02-24 | 3M Innovative Properties Company | Abrasive agglomerate polishing method |
| US7169031B1 (en) | 2005-07-28 | 2007-01-30 | 3M Innovative Properties Company | Self-contained conditioning abrasive article |
| US20070049164A1 (en) * | 2005-08-26 | 2007-03-01 | Thomson Clifford O | Polishing pad and method for manufacturing polishing pads |
| TW200720017A (en) * | 2005-09-19 | 2007-06-01 | Rohm & Haas Elect Mat | Water-based polishing pads having improved adhesion properties and methods of manufacture |
| RU2354675C1 (ru) * | 2005-09-30 | 2009-05-10 | Сэнт-Гобэн Керамикс Енд Пластикс, Инк. | Полировальная суспензия и способ полирования керамической детали |
| KR100697293B1 (ko) * | 2005-10-04 | 2007-03-20 | 삼성전자주식회사 | 화학기계적 연마용 연마제 및 이를 이용한 화학기계적연마방법 |
| MXPA05011412A (es) * | 2005-10-21 | 2010-06-02 | 3M Mexico S A De C V | Articulo abrasivo de limpieza que contiene un agente que promueve la creacion de espuma al contacto con agua de tratamiento de superficies. |
| US20070128991A1 (en) * | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
| US20070141312A1 (en) * | 2005-12-21 | 2007-06-21 | James David B | Multilayered polishing pads having improved defectivity and methods of manufacture |
| US7585340B2 (en) * | 2006-04-27 | 2009-09-08 | Cabot Microelectronics Corporation | Polishing composition containing polyether amine |
| US7452264B2 (en) * | 2006-06-27 | 2008-11-18 | Applied Materials, Inc. | Pad cleaning method |
| US20070295610A1 (en) * | 2006-06-27 | 2007-12-27 | Applied Materials, Inc. | Electrolyte retaining on a rotating platen by directional air flow |
| US20080063856A1 (en) * | 2006-09-11 | 2008-03-13 | Duong Chau H | Water-based polishing pads having improved contact area |
| US20090061743A1 (en) * | 2007-08-29 | 2009-03-05 | Stephen Jew | Method of soft pad preparation to reduce removal rate ramp-up effect and to stabilize defect rate |
| JP5078527B2 (ja) * | 2007-09-28 | 2012-11-21 | 富士紡ホールディングス株式会社 | 研磨布 |
| JP5274647B2 (ja) * | 2008-04-18 | 2013-08-28 | サンーゴバン アブレイシブズ,インコーポレイティド | 高空隙率研摩材物品およびその製造方法 |
| JP5351967B2 (ja) | 2008-08-28 | 2013-11-27 | スリーエム イノベイティブ プロパティズ カンパニー | 構造化研磨物品、その製造方法、及びウエハの平坦化における使用 |
| DE102008059044B4 (de) * | 2008-11-26 | 2013-08-22 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht |
| DE102009030298B4 (de) * | 2009-06-24 | 2012-07-12 | Siltronic Ag | Verfahren zur lokalen Politur einer Halbleiterscheibe |
| TWI404596B (zh) * | 2009-09-22 | 2013-08-11 | San Fang Chemical Industry Co | 製造研磨墊之方法及研磨墊 |
| JP2011171409A (ja) * | 2010-02-17 | 2011-09-01 | Disco Corp | ウエーハの研磨方法 |
| JP5617387B2 (ja) * | 2010-07-06 | 2014-11-05 | 富士電機株式会社 | 垂直磁気記録媒体用基板の製造方法、および、該製造方法により製造される垂直磁気記録媒体用基板 |
| SG11201606187RA (en) * | 2010-09-08 | 2016-09-29 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
| JP6091773B2 (ja) * | 2012-06-11 | 2017-03-08 | 株式会社東芝 | 半導体装置の製造方法 |
| US10226853B2 (en) | 2013-01-18 | 2019-03-12 | Applied Materials, Inc. | Methods and apparatus for conditioning of chemical mechanical polishing pads |
| JP6088919B2 (ja) * | 2013-06-28 | 2017-03-01 | 株式会社東芝 | 半導体装置の製造方法 |
| EP3084339B1 (en) * | 2013-12-18 | 2019-04-17 | Covestro LLC | Ballistic-resistant structural insulated panels |
| US9879474B2 (en) | 2014-05-06 | 2018-01-30 | Covestro Llc | Polycarbonate based rapid deployment cover system |
| KR102608960B1 (ko) * | 2016-12-05 | 2023-12-01 | 삼성전자주식회사 | 집적회로 소자 제조용 연마 패드의 제조 방법 |
| JP6991130B2 (ja) * | 2017-03-16 | 2022-01-12 | Idec株式会社 | 研削液生成装置、研削液生成方法、研削装置および研削液 |
| US11179822B2 (en) * | 2017-08-31 | 2021-11-23 | Hubei Dinghui Microelectronics Materials Co., Ltd | Polyurethane polishing layer, polishing pad comprising polishing layer, method for preparing polishing layer and method for planarizing material |
| US11759909B2 (en) * | 2020-06-19 | 2023-09-19 | Sk Enpulse Co., Ltd. | Polishing pad, preparation method thereof and method for preparing semiconductor device using same |
| US12138738B2 (en) * | 2020-06-19 | 2024-11-12 | Sk Enpulse Co., Ltd. | Polishing pad, preparation method thereof and method for preparing semiconductor device using same |
| US20220396723A1 (en) * | 2021-06-11 | 2022-12-15 | Sponge-Jet, Inc. | Abrasive media blends and related methods |
| IT202100019064A1 (it) * | 2021-07-19 | 2023-01-19 | Triulzi Cesare Special Equipments S R L | Una macchina lucidatrice |
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| CN120693233A (zh) * | 2023-03-22 | 2025-09-23 | 则武株式会社 | 研磨垫及其制造方法 |
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| US6387807B1 (en) | 2001-01-30 | 2002-05-14 | Speedfam-Ipec Corporation | Method for selective removal of copper |
| US6540935B2 (en) * | 2001-04-05 | 2003-04-01 | Samsung Electronics Co., Ltd. | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
| KR100557600B1 (ko) * | 2001-06-29 | 2006-03-10 | 주식회사 하이닉스반도체 | 나이트라이드 cmp용 슬러리 |
| US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
-
2003
- 2003-02-24 US US10/370,781 patent/US6910951B2/en not_active Expired - Fee Related
-
2004
- 2004-02-19 JP JP2006503725A patent/JP2006518940A/ja active Pending
- 2004-02-19 CN CNA2004800103002A patent/CN1774316A/zh active Pending
- 2004-02-19 WO PCT/US2004/004987 patent/WO2004076126A1/en not_active Ceased
- 2004-02-19 EP EP04712869A patent/EP1599314A1/en not_active Withdrawn
- 2004-02-19 KR KR1020057015685A patent/KR20050107454A/ko not_active Ceased
- 2004-02-20 TW TW093104265A patent/TWI316887B/zh not_active IP Right Cessation
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103534790A (zh) * | 2011-05-17 | 2014-01-22 | 二和钻石工业股份有限公司 | Cmp垫调整器及用于制造cmp垫调整器的方法 |
| US9314901B2 (en) | 2011-05-17 | 2016-04-19 | Ehwa Diamond Industrial Co., Ltd. | CMP pad conditioner, and method for producing the CMP pad conditioner |
| CN103534790B (zh) * | 2011-05-17 | 2016-07-06 | 二和钻石工业股份有限公司 | Cmp垫调整器及用于制造cmp垫调整器的方法 |
| CN103252710A (zh) * | 2013-04-08 | 2013-08-21 | 清华大学 | 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法 |
| CN103252710B (zh) * | 2013-04-08 | 2016-04-20 | 清华大学 | 用于超硬材料的化学机械平坦化抛光垫及制备、抛光方法 |
| CN110774167A (zh) * | 2018-07-26 | 2020-02-11 | 台湾积体电路制造股份有限公司 | 化学机械研磨垫的形成方法、化学机械研磨方法及其装置 |
| US11697183B2 (en) | 2018-07-26 | 2023-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fabrication of a polishing pad for chemical mechanical polishing |
| US12269141B2 (en) | 2018-07-26 | 2025-04-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fabrication of a polishing pad for chemical mechanical polishing |
| CN109894930A (zh) * | 2019-03-22 | 2019-06-18 | 湖南科技大学 | 一种缓释型柔性磨具及抛光方法 |
| WO2022133789A1 (en) * | 2020-12-23 | 2022-06-30 | Yangtze Memory Technologies Co., Ltd. | Methods for polishing dielectric layer in forming semiconductor device |
| US11462415B2 (en) | 2020-12-23 | 2022-10-04 | Yangtze Memory Technologies Co., Ltd. | Methods for polishing dielectric layer in forming semiconductor device |
| US11862472B2 (en) | 2020-12-23 | 2024-01-02 | Yangtze Memory Technologies Co., Ltd. | Methods for polishing dielectric layer in forming semiconductor device |
| CN114686110A (zh) * | 2020-12-30 | 2022-07-01 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
| CN113246016A (zh) * | 2021-06-09 | 2021-08-13 | 广东工业大学 | 一种多层多功能cmp抛光垫及其制备方法和应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI316887B (en) | 2009-11-11 |
| US6910951B2 (en) | 2005-06-28 |
| WO2004076126A1 (en) | 2004-09-10 |
| JP2006518940A (ja) | 2006-08-17 |
| EP1599314A1 (en) | 2005-11-30 |
| US20040166779A1 (en) | 2004-08-26 |
| KR20050107454A (ko) | 2005-11-11 |
| TW200510116A (en) | 2005-03-16 |
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