JP2007512966A5 - - Google Patents
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- JP2007512966A5 JP2007512966A5 JP2006539596A JP2006539596A JP2007512966A5 JP 2007512966 A5 JP2007512966 A5 JP 2007512966A5 JP 2006539596 A JP2006539596 A JP 2006539596A JP 2006539596 A JP2006539596 A JP 2006539596A JP 2007512966 A5 JP2007512966 A5 JP 2007512966A5
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- JP
- Japan
- Prior art keywords
- substrate according
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- removing material
- kpa
- Prior art date
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- 239000000463 material Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 23
- 239000003082 abrasive agent Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 2
- 230000003750 conditioning effect Effects 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000010949 copper Substances 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 4
- 230000006835 compression Effects 0.000 claims 3
- 238000007906 compression Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 1
- 239000002738 chelating agent Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000011236 particulate material Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 claims 1
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 239000006185 dispersion Substances 0.000 description 9
- 229920003009 polyurethane dispersion Polymers 0.000 description 5
- 239000004816 latex Substances 0.000 description 4
- 229920000126 latex Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- -1 polychloropropylene Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- NULPNBOHNGRVJF-UHFFFAOYSA-N buta-1,3-diene;1,1-dichloroethene;styrene Chemical compound C=CC=C.ClC(Cl)=C.C=CC1=CC=CC=C1 NULPNBOHNGRVJF-UHFFFAOYSA-N 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/704,982 US6918821B2 (en) | 2003-11-12 | 2003-11-12 | Materials and methods for low pressure chemical-mechanical planarization |
| PCT/US2004/036407 WO2005046935A1 (en) | 2003-11-12 | 2004-11-01 | Materials and methods for low pressure chemical-mechanical planarization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007512966A JP2007512966A (ja) | 2007-05-24 |
| JP2007512966A5 true JP2007512966A5 (enExample) | 2007-12-13 |
Family
ID=34552246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006539596A Pending JP2007512966A (ja) | 2003-11-12 | 2004-11-01 | 低圧力化学機械平坦化のための材料及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6918821B2 (enExample) |
| JP (1) | JP2007512966A (enExample) |
| KR (1) | KR20060109897A (enExample) |
| TW (1) | TW200524023A (enExample) |
| WO (1) | WO2005046935A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121969A1 (en) * | 2003-12-04 | 2005-06-09 | Ismail Emesh | Lubricant for wafer polishing using a fixed abrasive pad |
| US7220167B2 (en) * | 2005-01-11 | 2007-05-22 | Hitachi Global Storage Technologies Netherlands B.V. | Gentle chemical mechanical polishing (CMP) liftoff process |
| TWI326790B (en) * | 2005-02-16 | 2010-07-01 | Au Optronics Corp | Method of fabricating a thin film transistor of a thin film transistor liquid crystal display and method of fabricating a transistor liquid crystal display |
| KR20060099398A (ko) * | 2005-03-08 | 2006-09-19 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 수계 연마 패드 및 제조 방법 |
| US7521353B2 (en) * | 2005-03-25 | 2009-04-21 | Sandisk 3D Llc | Method for reducing dielectric overetch when making contact to conductive features |
| US7422985B2 (en) * | 2005-03-25 | 2008-09-09 | Sandisk 3D Llc | Method for reducing dielectric overetch using a dielectric etch stop at a planar surface |
| TW200720017A (en) * | 2005-09-19 | 2007-06-01 | Rohm & Haas Elect Mat | Water-based polishing pads having improved adhesion properties and methods of manufacture |
| US20070128991A1 (en) * | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
| US20070295610A1 (en) * | 2006-06-27 | 2007-12-27 | Applied Materials, Inc. | Electrolyte retaining on a rotating platen by directional air flow |
| US7452264B2 (en) * | 2006-06-27 | 2008-11-18 | Applied Materials, Inc. | Pad cleaning method |
| DE102006032455A1 (de) * | 2006-07-13 | 2008-04-10 | Siltronic Ag | Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben sowie Halbleierscheibe mit hervorragender Ebenheit |
| US20080063856A1 (en) * | 2006-09-11 | 2008-03-13 | Duong Chau H | Water-based polishing pads having improved contact area |
| US20090023362A1 (en) * | 2007-07-17 | 2009-01-22 | Tzu-Shin Chen | Retaining ring for chemical mechanical polishing, its operational method and application system |
| US20090062414A1 (en) * | 2007-08-28 | 2009-03-05 | David Picheng Huang | System and method for producing damping polyurethane CMP pads |
| US8721917B2 (en) * | 2007-10-05 | 2014-05-13 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
| JP5346940B2 (ja) * | 2007-10-05 | 2013-11-20 | サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド | 改善された炭化ケイ素粒子、ならびにその製造方法および使用方法 |
| US8052507B2 (en) * | 2007-11-20 | 2011-11-08 | Praxair Technology, Inc. | Damping polyurethane CMP pads with microfillers |
| WO2009128982A2 (en) * | 2008-04-18 | 2009-10-22 | Saint-Gobain Abrasives, Inc. | High porosity abrasive articles and methods of manufacturing same |
| WO2010025003A2 (en) | 2008-08-28 | 2010-03-04 | 3M Innovative Properties Company | Structured abrasive article, method of making the same, and use in wafer planarization |
| WO2010138724A1 (en) * | 2009-05-27 | 2010-12-02 | Rogers Corporation | Polishing pad, polyurethane layer therefor, and method of polishing a silicon wafer |
| TWI404596B (zh) * | 2009-09-22 | 2013-08-11 | San Fang Chemical Industry Co | 製造研磨墊之方法及研磨墊 |
| WO2011087653A1 (en) * | 2009-12-22 | 2011-07-21 | 3M Innovative Properties Company | Flexible abrasive article and methods of making |
| JP2011171409A (ja) * | 2010-02-17 | 2011-09-01 | Disco Corp | ウエーハの研磨方法 |
| DE102010013519B4 (de) * | 2010-03-31 | 2012-12-27 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
| JP6581587B2 (ja) * | 2013-12-18 | 2019-09-25 | コベストロ・エルエルシー | 耐弾丸構造用防護パネル |
| WO2015171775A1 (en) | 2014-05-06 | 2015-11-12 | Covestro Llc | Polycarbonate based rapid deployment cover system |
| CN109015341B (zh) * | 2018-08-03 | 2020-08-11 | 成都时代立夫科技有限公司 | 一种基于多孔氧化铈的cmp抛光层及其制备方法 |
| JP6446590B1 (ja) * | 2018-08-09 | 2018-12-26 | 国立大学法人 東京大学 | 局所研磨加工方法、および局所研磨加工装置、並びに該局所研磨加工装置を用いた修正研磨加工装置 |
| WO2024054662A2 (en) * | 2022-09-09 | 2024-03-14 | Biocubic Llc | Compositions and methods for nanohistology |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6069080A (en) * | 1992-08-19 | 2000-05-30 | Rodel Holdings, Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
| JPH10156704A (ja) * | 1996-12-03 | 1998-06-16 | Toshiba Mach Co Ltd | 研磨方法およびその装置 |
| US6019670A (en) * | 1997-03-10 | 2000-02-01 | Applied Materials, Inc. | Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system |
| JPH11170155A (ja) * | 1997-12-09 | 1999-06-29 | Hitachi Ltd | 研磨装置 |
| JPH11204467A (ja) * | 1998-01-19 | 1999-07-30 | Sony Corp | 半導体製造装置および半導体装置の製造方法 |
| JP3922887B2 (ja) * | 2001-03-16 | 2007-05-30 | 株式会社荏原製作所 | ドレッサ及びポリッシング装置 |
| JP4686912B2 (ja) * | 2001-06-15 | 2011-05-25 | 東レ株式会社 | 研磨パッド |
| US7104869B2 (en) * | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
| US6821881B2 (en) * | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
| KR20040030100A (ko) * | 2001-08-16 | 2004-04-08 | 아사히 가세이 케미칼즈 가부시키가이샤 | 금속막용 연마액 및 그를 이용한 반도체 기판의 제조 방법 |
| US6685540B2 (en) * | 2001-11-27 | 2004-02-03 | Cabot Microelectronics Corporation | Polishing pad comprising particles with a solid core and polymeric shell |
| JP2003251555A (ja) * | 2001-12-28 | 2003-09-09 | Ebara Corp | ポリッシング方法 |
-
2003
- 2003-11-12 US US10/704,982 patent/US6918821B2/en not_active Expired - Fee Related
-
2004
- 2004-11-01 WO PCT/US2004/036407 patent/WO2005046935A1/en not_active Ceased
- 2004-11-01 KR KR1020067009043A patent/KR20060109897A/ko not_active Ceased
- 2004-11-01 JP JP2006539596A patent/JP2007512966A/ja active Pending
- 2004-11-11 TW TW093134451A patent/TW200524023A/zh unknown
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