TW200524023A - Materials and methods for low pressure chemical-mechanical planarization - Google Patents
Materials and methods for low pressure chemical-mechanical planarization Download PDFInfo
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- TW200524023A TW200524023A TW093134451A TW93134451A TW200524023A TW 200524023 A TW200524023 A TW 200524023A TW 093134451 A TW093134451 A TW 093134451A TW 93134451 A TW93134451 A TW 93134451A TW 200524023 A TW200524023 A TW 200524023A
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/007—Cleaning of grinding wheels
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/704,982 US6918821B2 (en) | 2003-11-12 | 2003-11-12 | Materials and methods for low pressure chemical-mechanical planarization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200524023A true TW200524023A (en) | 2005-07-16 |
Family
ID=34552246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093134451A TW200524023A (en) | 2003-11-12 | 2004-11-11 | Materials and methods for low pressure chemical-mechanical planarization |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6918821B2 (enExample) |
| JP (1) | JP2007512966A (enExample) |
| KR (1) | KR20060109897A (enExample) |
| TW (1) | TW200524023A (enExample) |
| WO (1) | WO2005046935A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102448669A (zh) * | 2009-05-27 | 2012-05-09 | 罗杰斯公司 | 抛光垫、其聚氨酯层及抛光硅晶片的方法 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121969A1 (en) * | 2003-12-04 | 2005-06-09 | Ismail Emesh | Lubricant for wafer polishing using a fixed abrasive pad |
| US7220167B2 (en) * | 2005-01-11 | 2007-05-22 | Hitachi Global Storage Technologies Netherlands B.V. | Gentle chemical mechanical polishing (CMP) liftoff process |
| TWI326790B (en) * | 2005-02-16 | 2010-07-01 | Au Optronics Corp | Method of fabricating a thin film transistor of a thin film transistor liquid crystal display and method of fabricating a transistor liquid crystal display |
| KR20060099398A (ko) * | 2005-03-08 | 2006-09-19 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 수계 연마 패드 및 제조 방법 |
| US7422985B2 (en) * | 2005-03-25 | 2008-09-09 | Sandisk 3D Llc | Method for reducing dielectric overetch using a dielectric etch stop at a planar surface |
| US7521353B2 (en) * | 2005-03-25 | 2009-04-21 | Sandisk 3D Llc | Method for reducing dielectric overetch when making contact to conductive features |
| TW200720017A (en) * | 2005-09-19 | 2007-06-01 | Rohm & Haas Elect Mat | Water-based polishing pads having improved adhesion properties and methods of manufacture |
| US20070128991A1 (en) * | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
| US7452264B2 (en) * | 2006-06-27 | 2008-11-18 | Applied Materials, Inc. | Pad cleaning method |
| US20070295610A1 (en) * | 2006-06-27 | 2007-12-27 | Applied Materials, Inc. | Electrolyte retaining on a rotating platen by directional air flow |
| DE102006032455A1 (de) * | 2006-07-13 | 2008-04-10 | Siltronic Ag | Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben sowie Halbleierscheibe mit hervorragender Ebenheit |
| US20080063856A1 (en) * | 2006-09-11 | 2008-03-13 | Duong Chau H | Water-based polishing pads having improved contact area |
| US20090023362A1 (en) * | 2007-07-17 | 2009-01-22 | Tzu-Shin Chen | Retaining ring for chemical mechanical polishing, its operational method and application system |
| US20090062414A1 (en) * | 2007-08-28 | 2009-03-05 | David Picheng Huang | System and method for producing damping polyurethane CMP pads |
| KR101323577B1 (ko) * | 2007-10-05 | 2013-10-30 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 개선된 탄화규소 입자, 그 제조방법 및 그의 이용 방법 |
| CA2700413A1 (en) * | 2007-10-05 | 2009-04-09 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
| US8052507B2 (en) * | 2007-11-20 | 2011-11-08 | Praxair Technology, Inc. | Damping polyurethane CMP pads with microfillers |
| CN102046751B (zh) * | 2008-04-18 | 2013-08-28 | 圣戈班磨料磨具有限公司 | 高孔隙率磨料物品及其制造方法 |
| CN102138203B (zh) | 2008-08-28 | 2015-02-04 | 3M创新有限公司 | 结构化磨料制品、其制备方法、及其在晶片平面化中的用途 |
| TWI404596B (zh) * | 2009-09-22 | 2013-08-11 | San Fang Chemical Industry Co | 製造研磨墊之方法及研磨墊 |
| WO2011087653A1 (en) * | 2009-12-22 | 2011-07-21 | 3M Innovative Properties Company | Flexible abrasive article and methods of making |
| JP2011171409A (ja) * | 2010-02-17 | 2011-09-01 | Disco Corp | ウエーハの研磨方法 |
| DE102010013519B4 (de) * | 2010-03-31 | 2012-12-27 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
| EP3084339B1 (en) * | 2013-12-18 | 2019-04-17 | Covestro LLC | Ballistic-resistant structural insulated panels |
| EP3140487A1 (en) | 2014-05-06 | 2017-03-15 | Covestro LLC | Polycarbonate based rapid deployment cover system |
| CN109015341B (zh) * | 2018-08-03 | 2020-08-11 | 成都时代立夫科技有限公司 | 一种基于多孔氧化铈的cmp抛光层及其制备方法 |
| JP6446590B1 (ja) * | 2018-08-09 | 2018-12-26 | 国立大学法人 東京大学 | 局所研磨加工方法、および局所研磨加工装置、並びに該局所研磨加工装置を用いた修正研磨加工装置 |
| WO2024054662A2 (en) * | 2022-09-09 | 2024-03-14 | Biocubic Llc | Compositions and methods for nanohistology |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6069080A (en) * | 1992-08-19 | 2000-05-30 | Rodel Holdings, Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
| JPH10156704A (ja) * | 1996-12-03 | 1998-06-16 | Toshiba Mach Co Ltd | 研磨方法およびその装置 |
| US6019670A (en) * | 1997-03-10 | 2000-02-01 | Applied Materials, Inc. | Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system |
| JPH11170155A (ja) * | 1997-12-09 | 1999-06-29 | Hitachi Ltd | 研磨装置 |
| JPH11204467A (ja) * | 1998-01-19 | 1999-07-30 | Sony Corp | 半導体製造装置および半導体装置の製造方法 |
| JP3922887B2 (ja) * | 2001-03-16 | 2007-05-30 | 株式会社荏原製作所 | ドレッサ及びポリッシング装置 |
| JP4686912B2 (ja) * | 2001-06-15 | 2011-05-25 | 東レ株式会社 | 研磨パッド |
| US7104869B2 (en) * | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
| US6821881B2 (en) * | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
| WO2003021651A1 (en) * | 2001-08-16 | 2003-03-13 | Asahi Kasei Chemicals Corporation | Polishing fluid for metallic film and method for producing semiconductor substrate using the same |
| US6685540B2 (en) * | 2001-11-27 | 2004-02-03 | Cabot Microelectronics Corporation | Polishing pad comprising particles with a solid core and polymeric shell |
| JP2003251555A (ja) * | 2001-12-28 | 2003-09-09 | Ebara Corp | ポリッシング方法 |
-
2003
- 2003-11-12 US US10/704,982 patent/US6918821B2/en not_active Expired - Fee Related
-
2004
- 2004-11-01 WO PCT/US2004/036407 patent/WO2005046935A1/en not_active Ceased
- 2004-11-01 KR KR1020067009043A patent/KR20060109897A/ko not_active Ceased
- 2004-11-01 JP JP2006539596A patent/JP2007512966A/ja active Pending
- 2004-11-11 TW TW093134451A patent/TW200524023A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102448669A (zh) * | 2009-05-27 | 2012-05-09 | 罗杰斯公司 | 抛光垫、其聚氨酯层及抛光硅晶片的方法 |
| US9056382B2 (en) | 2009-05-27 | 2015-06-16 | Rogers Corporation | Polishing pad, composition for the manufacture thereof, and method of making and using |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050101227A1 (en) | 2005-05-12 |
| US6918821B2 (en) | 2005-07-19 |
| WO2005046935A1 (en) | 2005-05-26 |
| KR20060109897A (ko) | 2006-10-23 |
| JP2007512966A (ja) | 2007-05-24 |
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