KR20060109897A - 저압 화학-기계적 평탄화를 위한 재료 및 방법 - Google Patents

저압 화학-기계적 평탄화를 위한 재료 및 방법 Download PDF

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Publication number
KR20060109897A
KR20060109897A KR1020067009043A KR20067009043A KR20060109897A KR 20060109897 A KR20060109897 A KR 20060109897A KR 1020067009043 A KR1020067009043 A KR 1020067009043A KR 20067009043 A KR20067009043 A KR 20067009043A KR 20060109897 A KR20060109897 A KR 20060109897A
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KR
South Korea
Prior art keywords
polishing
substrate
conditioning
psi
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067009043A
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English (en)
Korean (ko)
Inventor
수다카르 발리제팔리
데일 제이. 알드리치
로라 에이. 그리어
마이클 이. 밀스
Original Assignee
다우 글로벌 테크놀로지스 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 다우 글로벌 테크놀로지스 인크. filed Critical 다우 글로벌 테크놀로지스 인크.
Publication of KR20060109897A publication Critical patent/KR20060109897A/ko
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/007—Cleaning of grinding wheels

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
KR1020067009043A 2003-11-12 2004-11-01 저압 화학-기계적 평탄화를 위한 재료 및 방법 Ceased KR20060109897A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/704,982 US6918821B2 (en) 2003-11-12 2003-11-12 Materials and methods for low pressure chemical-mechanical planarization
US10/704,982 2003-11-12

Publications (1)

Publication Number Publication Date
KR20060109897A true KR20060109897A (ko) 2006-10-23

Family

ID=34552246

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067009043A Ceased KR20060109897A (ko) 2003-11-12 2004-11-01 저압 화학-기계적 평탄화를 위한 재료 및 방법

Country Status (5)

Country Link
US (1) US6918821B2 (enExample)
JP (1) JP2007512966A (enExample)
KR (1) KR20060109897A (enExample)
TW (1) TW200524023A (enExample)
WO (1) WO2005046935A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050121969A1 (en) * 2003-12-04 2005-06-09 Ismail Emesh Lubricant for wafer polishing using a fixed abrasive pad
US7220167B2 (en) * 2005-01-11 2007-05-22 Hitachi Global Storage Technologies Netherlands B.V. Gentle chemical mechanical polishing (CMP) liftoff process
TWI326790B (en) * 2005-02-16 2010-07-01 Au Optronics Corp Method of fabricating a thin film transistor of a thin film transistor liquid crystal display and method of fabricating a transistor liquid crystal display
KR20060099398A (ko) * 2005-03-08 2006-09-19 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 수계 연마 패드 및 제조 방법
US7422985B2 (en) * 2005-03-25 2008-09-09 Sandisk 3D Llc Method for reducing dielectric overetch using a dielectric etch stop at a planar surface
US7521353B2 (en) * 2005-03-25 2009-04-21 Sandisk 3D Llc Method for reducing dielectric overetch when making contact to conductive features
TW200720017A (en) * 2005-09-19 2007-06-01 Rohm & Haas Elect Mat Water-based polishing pads having improved adhesion properties and methods of manufacture
US20070128991A1 (en) * 2005-12-07 2007-06-07 Yoon Il-Young Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
US7452264B2 (en) * 2006-06-27 2008-11-18 Applied Materials, Inc. Pad cleaning method
US20070295610A1 (en) * 2006-06-27 2007-12-27 Applied Materials, Inc. Electrolyte retaining on a rotating platen by directional air flow
DE102006032455A1 (de) * 2006-07-13 2008-04-10 Siltronic Ag Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben sowie Halbleierscheibe mit hervorragender Ebenheit
US20080063856A1 (en) * 2006-09-11 2008-03-13 Duong Chau H Water-based polishing pads having improved contact area
US20090023362A1 (en) * 2007-07-17 2009-01-22 Tzu-Shin Chen Retaining ring for chemical mechanical polishing, its operational method and application system
US20090062414A1 (en) * 2007-08-28 2009-03-05 David Picheng Huang System and method for producing damping polyurethane CMP pads
KR101323577B1 (ko) * 2007-10-05 2013-10-30 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 개선된 탄화규소 입자, 그 제조방법 및 그의 이용 방법
CA2700413A1 (en) * 2007-10-05 2009-04-09 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries
US8052507B2 (en) * 2007-11-20 2011-11-08 Praxair Technology, Inc. Damping polyurethane CMP pads with microfillers
CN102046751B (zh) * 2008-04-18 2013-08-28 圣戈班磨料磨具有限公司 高孔隙率磨料物品及其制造方法
CN102138203B (zh) 2008-08-28 2015-02-04 3M创新有限公司 结构化磨料制品、其制备方法、及其在晶片平面化中的用途
KR101352235B1 (ko) * 2009-05-27 2014-01-15 로저스코포레이션 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법
TWI404596B (zh) * 2009-09-22 2013-08-11 San Fang Chemical Industry Co 製造研磨墊之方法及研磨墊
WO2011087653A1 (en) * 2009-12-22 2011-07-21 3M Innovative Properties Company Flexible abrasive article and methods of making
JP2011171409A (ja) * 2010-02-17 2011-09-01 Disco Corp ウエーハの研磨方法
DE102010013519B4 (de) * 2010-03-31 2012-12-27 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
EP3084339B1 (en) * 2013-12-18 2019-04-17 Covestro LLC Ballistic-resistant structural insulated panels
EP3140487A1 (en) 2014-05-06 2017-03-15 Covestro LLC Polycarbonate based rapid deployment cover system
CN109015341B (zh) * 2018-08-03 2020-08-11 成都时代立夫科技有限公司 一种基于多孔氧化铈的cmp抛光层及其制备方法
JP6446590B1 (ja) * 2018-08-09 2018-12-26 国立大学法人 東京大学 局所研磨加工方法、および局所研磨加工装置、並びに該局所研磨加工装置を用いた修正研磨加工装置
WO2024054662A2 (en) * 2022-09-09 2024-03-14 Biocubic Llc Compositions and methods for nanohistology

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6069080A (en) * 1992-08-19 2000-05-30 Rodel Holdings, Inc. Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like
JPH10156704A (ja) * 1996-12-03 1998-06-16 Toshiba Mach Co Ltd 研磨方法およびその装置
US6019670A (en) * 1997-03-10 2000-02-01 Applied Materials, Inc. Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system
JPH11170155A (ja) * 1997-12-09 1999-06-29 Hitachi Ltd 研磨装置
JPH11204467A (ja) * 1998-01-19 1999-07-30 Sony Corp 半導体製造装置および半導体装置の製造方法
JP3922887B2 (ja) * 2001-03-16 2007-05-30 株式会社荏原製作所 ドレッサ及びポリッシング装置
JP4686912B2 (ja) * 2001-06-15 2011-05-25 東レ株式会社 研磨パッド
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US6821881B2 (en) * 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
WO2003021651A1 (en) * 2001-08-16 2003-03-13 Asahi Kasei Chemicals Corporation Polishing fluid for metallic film and method for producing semiconductor substrate using the same
US6685540B2 (en) * 2001-11-27 2004-02-03 Cabot Microelectronics Corporation Polishing pad comprising particles with a solid core and polymeric shell
JP2003251555A (ja) * 2001-12-28 2003-09-09 Ebara Corp ポリッシング方法

Also Published As

Publication number Publication date
US20050101227A1 (en) 2005-05-12
TW200524023A (en) 2005-07-16
US6918821B2 (en) 2005-07-19
WO2005046935A1 (en) 2005-05-26
JP2007512966A (ja) 2007-05-24

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