JP2007512966A - 低圧力化学機械平坦化のための材料及び方法 - Google Patents
低圧力化学機械平坦化のための材料及び方法 Download PDFInfo
- Publication number
- JP2007512966A JP2007512966A JP2006539596A JP2006539596A JP2007512966A JP 2007512966 A JP2007512966 A JP 2007512966A JP 2006539596 A JP2006539596 A JP 2006539596A JP 2006539596 A JP2006539596 A JP 2006539596A JP 2007512966 A JP2007512966 A JP 2007512966A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- polishing
- substrate according
- conditioning
- psi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 129
- 239000000126 substance Substances 0.000 title abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 238000005498 polishing Methods 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 103
- 239000002245 particle Substances 0.000 claims description 102
- 230000003750 conditioning effect Effects 0.000 claims description 93
- 239000003082 abrasive agent Substances 0.000 claims description 63
- 239000007788 liquid Substances 0.000 claims description 54
- 229920000642 polymer Polymers 0.000 claims description 24
- 230000033001 locomotion Effects 0.000 claims description 22
- 239000002002 slurry Substances 0.000 claims description 22
- 239000011159 matrix material Substances 0.000 claims description 15
- 239000004094 surface-active agent Substances 0.000 claims description 15
- 239000007800 oxidant agent Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 6
- 239000002738 chelating agent Substances 0.000 claims description 5
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000011236 particulate material Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 74
- 239000004065 semiconductor Substances 0.000 abstract description 41
- 238000004519 manufacturing process Methods 0.000 abstract description 15
- 238000001465 metallisation Methods 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 51
- 235000012431 wafers Nutrition 0.000 description 38
- 229920003009 polyurethane dispersion Polymers 0.000 description 33
- 239000006260 foam Substances 0.000 description 32
- 239000006185 dispersion Substances 0.000 description 23
- 229920002635 polyurethane Polymers 0.000 description 17
- 239000004814 polyurethane Substances 0.000 description 17
- 210000004027 cell Anatomy 0.000 description 13
- 238000012360 testing method Methods 0.000 description 11
- 239000004034 viscosity adjusting agent Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 9
- 230000001143 conditioned effect Effects 0.000 description 9
- 238000011065 in-situ storage Methods 0.000 description 9
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000005187 foaming Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 229920005830 Polyurethane Foam Polymers 0.000 description 6
- 229920002125 Sokalan® Polymers 0.000 description 6
- 239000011496 polyurethane foam Substances 0.000 description 6
- JPNZKPRONVOMLL-UHFFFAOYSA-N azane;octadecanoic acid Chemical compound [NH4+].CCCCCCCCCCCCCCCCCC([O-])=O JPNZKPRONVOMLL-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000004816 latex Substances 0.000 description 5
- 229920000126 latex Polymers 0.000 description 5
- 229920005862 polyol Polymers 0.000 description 5
- 150000003077 polyols Chemical class 0.000 description 5
- 239000002562 thickening agent Substances 0.000 description 5
- 239000004604 Blowing Agent Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- -1 aromatic isocyanates Chemical class 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- YXLIYGUJLJFLJH-UHFFFAOYSA-L disodium;4-(octadecylamino)-4-oxo-2-sulfonatobutanoate Chemical compound [Na+].[Na+].CCCCCCCCCCCCCCCCCCNC(=O)CC(C([O-])=O)S([O-])(=O)=O YXLIYGUJLJFLJH-UHFFFAOYSA-L 0.000 description 4
- 239000004088 foaming agent Substances 0.000 description 4
- 239000012948 isocyanate Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 239000003945 anionic surfactant Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002513 isocyanates Chemical class 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000004970 Chain extender Substances 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 210000002421 cell wall Anatomy 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011246 composite particle Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 238000005389 semiconductor device fabrication Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000004634 thermosetting polymer Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- XPTYFQIWAFDDML-UHFFFAOYSA-N 2-aminoacetic acid;ethanol Chemical compound CCO.NCC(O)=O.NCC(O)=O XPTYFQIWAFDDML-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229920003091 Methocel™ Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HOCHJWBNDOKTEV-UHFFFAOYSA-K [Na+].C(C)C(CC(C(C(=O)[O-])S(=O)(=O)[O-])(C(=O)[O-])CC(CCCC)CC)CCCC.[Na+].[Na+] Chemical compound [Na+].C(C)C(CC(C(C(=O)[O-])S(=O)(=O)[O-])(C(=O)[O-])CC(CCCC)CC)CCCC.[Na+].[Na+] HOCHJWBNDOKTEV-UHFFFAOYSA-K 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229920003232 aliphatic polyester Polymers 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229940088990 ammonium stearate Drugs 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- NULPNBOHNGRVJF-UHFFFAOYSA-N buta-1,3-diene;1,1-dichloroethene;styrene Chemical compound C=CC=C.ClC(Cl)=C.C=CC1=CC=CC=C1 NULPNBOHNGRVJF-UHFFFAOYSA-N 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 229920003086 cellulose ether Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920005553 polystyrene-acrylate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/007—Cleaning of grinding wheels
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/704,982 US6918821B2 (en) | 2003-11-12 | 2003-11-12 | Materials and methods for low pressure chemical-mechanical planarization |
| PCT/US2004/036407 WO2005046935A1 (en) | 2003-11-12 | 2004-11-01 | Materials and methods for low pressure chemical-mechanical planarization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007512966A true JP2007512966A (ja) | 2007-05-24 |
| JP2007512966A5 JP2007512966A5 (enExample) | 2007-12-13 |
Family
ID=34552246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006539596A Pending JP2007512966A (ja) | 2003-11-12 | 2004-11-01 | 低圧力化学機械平坦化のための材料及び方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6918821B2 (enExample) |
| JP (1) | JP2007512966A (enExample) |
| KR (1) | KR20060109897A (enExample) |
| TW (1) | TW200524023A (enExample) |
| WO (1) | WO2005046935A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008018528A (ja) * | 2006-07-13 | 2008-01-31 | Siltronic Ag | 複数の半導体ウェハを同時に両面研磨する方法および半導体ウェハ |
| JP2011171409A (ja) * | 2010-02-17 | 2011-09-01 | Disco Corp | ウエーハの研磨方法 |
| JP2011216884A (ja) * | 2010-03-31 | 2011-10-27 | Siltronic Ag | 半導体ウエハの研磨方法 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121969A1 (en) * | 2003-12-04 | 2005-06-09 | Ismail Emesh | Lubricant for wafer polishing using a fixed abrasive pad |
| US7220167B2 (en) * | 2005-01-11 | 2007-05-22 | Hitachi Global Storage Technologies Netherlands B.V. | Gentle chemical mechanical polishing (CMP) liftoff process |
| TWI326790B (en) * | 2005-02-16 | 2010-07-01 | Au Optronics Corp | Method of fabricating a thin film transistor of a thin film transistor liquid crystal display and method of fabricating a transistor liquid crystal display |
| KR20060099398A (ko) * | 2005-03-08 | 2006-09-19 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 수계 연마 패드 및 제조 방법 |
| US7422985B2 (en) * | 2005-03-25 | 2008-09-09 | Sandisk 3D Llc | Method for reducing dielectric overetch using a dielectric etch stop at a planar surface |
| US7521353B2 (en) * | 2005-03-25 | 2009-04-21 | Sandisk 3D Llc | Method for reducing dielectric overetch when making contact to conductive features |
| TW200720017A (en) * | 2005-09-19 | 2007-06-01 | Rohm & Haas Elect Mat | Water-based polishing pads having improved adhesion properties and methods of manufacture |
| US20070128991A1 (en) * | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
| US7452264B2 (en) * | 2006-06-27 | 2008-11-18 | Applied Materials, Inc. | Pad cleaning method |
| US20070295610A1 (en) * | 2006-06-27 | 2007-12-27 | Applied Materials, Inc. | Electrolyte retaining on a rotating platen by directional air flow |
| US20080063856A1 (en) * | 2006-09-11 | 2008-03-13 | Duong Chau H | Water-based polishing pads having improved contact area |
| US20090023362A1 (en) * | 2007-07-17 | 2009-01-22 | Tzu-Shin Chen | Retaining ring for chemical mechanical polishing, its operational method and application system |
| US20090062414A1 (en) * | 2007-08-28 | 2009-03-05 | David Picheng Huang | System and method for producing damping polyurethane CMP pads |
| KR101323577B1 (ko) * | 2007-10-05 | 2013-10-30 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 개선된 탄화규소 입자, 그 제조방법 및 그의 이용 방법 |
| CA2700413A1 (en) * | 2007-10-05 | 2009-04-09 | Saint-Gobain Ceramics & Plastics, Inc. | Polishing of sapphire with composite slurries |
| US8052507B2 (en) * | 2007-11-20 | 2011-11-08 | Praxair Technology, Inc. | Damping polyurethane CMP pads with microfillers |
| CN102046751B (zh) * | 2008-04-18 | 2013-08-28 | 圣戈班磨料磨具有限公司 | 高孔隙率磨料物品及其制造方法 |
| CN102138203B (zh) | 2008-08-28 | 2015-02-04 | 3M创新有限公司 | 结构化磨料制品、其制备方法、及其在晶片平面化中的用途 |
| KR101352235B1 (ko) * | 2009-05-27 | 2014-01-15 | 로저스코포레이션 | 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법 |
| TWI404596B (zh) * | 2009-09-22 | 2013-08-11 | San Fang Chemical Industry Co | 製造研磨墊之方法及研磨墊 |
| WO2011087653A1 (en) * | 2009-12-22 | 2011-07-21 | 3M Innovative Properties Company | Flexible abrasive article and methods of making |
| EP3084339B1 (en) * | 2013-12-18 | 2019-04-17 | Covestro LLC | Ballistic-resistant structural insulated panels |
| EP3140487A1 (en) | 2014-05-06 | 2017-03-15 | Covestro LLC | Polycarbonate based rapid deployment cover system |
| CN109015341B (zh) * | 2018-08-03 | 2020-08-11 | 成都时代立夫科技有限公司 | 一种基于多孔氧化铈的cmp抛光层及其制备方法 |
| JP6446590B1 (ja) * | 2018-08-09 | 2018-12-26 | 国立大学法人 東京大学 | 局所研磨加工方法、および局所研磨加工装置、並びに該局所研磨加工装置を用いた修正研磨加工装置 |
| WO2024054662A2 (en) * | 2022-09-09 | 2024-03-14 | Biocubic Llc | Compositions and methods for nanohistology |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10156704A (ja) * | 1996-12-03 | 1998-06-16 | Toshiba Mach Co Ltd | 研磨方法およびその装置 |
| JPH11170155A (ja) * | 1997-12-09 | 1999-06-29 | Hitachi Ltd | 研磨装置 |
| JPH11204467A (ja) * | 1998-01-19 | 1999-07-30 | Sony Corp | 半導体製造装置および半導体装置の製造方法 |
| JP2002370157A (ja) * | 2001-06-15 | 2002-12-24 | Toray Ind Inc | 研磨パッド |
| WO2003021651A1 (en) * | 2001-08-16 | 2003-03-13 | Asahi Kasei Chemicals Corporation | Polishing fluid for metallic film and method for producing semiconductor substrate using the same |
| JP2003251555A (ja) * | 2001-12-28 | 2003-09-09 | Ebara Corp | ポリッシング方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6069080A (en) * | 1992-08-19 | 2000-05-30 | Rodel Holdings, Inc. | Fixed abrasive polishing system for the manufacture of semiconductor devices, memory disks and the like |
| US6019670A (en) * | 1997-03-10 | 2000-02-01 | Applied Materials, Inc. | Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system |
| JP3922887B2 (ja) * | 2001-03-16 | 2007-05-30 | 株式会社荏原製作所 | ドレッサ及びポリッシング装置 |
| US7104869B2 (en) * | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
| US6821881B2 (en) * | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
| US6685540B2 (en) * | 2001-11-27 | 2004-02-03 | Cabot Microelectronics Corporation | Polishing pad comprising particles with a solid core and polymeric shell |
-
2003
- 2003-11-12 US US10/704,982 patent/US6918821B2/en not_active Expired - Fee Related
-
2004
- 2004-11-01 WO PCT/US2004/036407 patent/WO2005046935A1/en not_active Ceased
- 2004-11-01 KR KR1020067009043A patent/KR20060109897A/ko not_active Ceased
- 2004-11-01 JP JP2006539596A patent/JP2007512966A/ja active Pending
- 2004-11-11 TW TW093134451A patent/TW200524023A/zh unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10156704A (ja) * | 1996-12-03 | 1998-06-16 | Toshiba Mach Co Ltd | 研磨方法およびその装置 |
| JPH11170155A (ja) * | 1997-12-09 | 1999-06-29 | Hitachi Ltd | 研磨装置 |
| JPH11204467A (ja) * | 1998-01-19 | 1999-07-30 | Sony Corp | 半導体製造装置および半導体装置の製造方法 |
| JP2002370157A (ja) * | 2001-06-15 | 2002-12-24 | Toray Ind Inc | 研磨パッド |
| WO2003021651A1 (en) * | 2001-08-16 | 2003-03-13 | Asahi Kasei Chemicals Corporation | Polishing fluid for metallic film and method for producing semiconductor substrate using the same |
| JP2003251555A (ja) * | 2001-12-28 | 2003-09-09 | Ebara Corp | ポリッシング方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008018528A (ja) * | 2006-07-13 | 2008-01-31 | Siltronic Ag | 複数の半導体ウェハを同時に両面研磨する方法および半導体ウェハ |
| JP2011171409A (ja) * | 2010-02-17 | 2011-09-01 | Disco Corp | ウエーハの研磨方法 |
| JP2011216884A (ja) * | 2010-03-31 | 2011-10-27 | Siltronic Ag | 半導体ウエハの研磨方法 |
| US8882565B2 (en) | 2010-03-31 | 2014-11-11 | Siltronic Ag | Method for polishing a semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050101227A1 (en) | 2005-05-12 |
| TW200524023A (en) | 2005-07-16 |
| US6918821B2 (en) | 2005-07-19 |
| WO2005046935A1 (en) | 2005-05-26 |
| KR20060109897A (ko) | 2006-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6918821B2 (en) | Materials and methods for low pressure chemical-mechanical planarization | |
| TWI316887B (en) | Materials and methods for chemical-mechanical planarization | |
| KR101494034B1 (ko) | 반도체 제작에 적합한 표면 개질용 조성물 및 방법 | |
| US6857941B2 (en) | Multi-phase polishing pad | |
| KR100638289B1 (ko) | 구조화된 웨이퍼의 표면 변형 방법 | |
| JP5270182B2 (ja) | ケミカルメカニカル研磨パッド | |
| JP6290004B2 (ja) | 軟質かつコンディショニング可能な化学機械ウィンドウ研磨パッド | |
| EP1118432A2 (en) | Substrate polishing pad | |
| JP2006519115A (ja) | 固定研磨材料の製造方法 | |
| US20020197935A1 (en) | Method of polishing a substrate | |
| KR20150123728A (ko) | 화학 기계적 연마 패드 | |
| JP6113331B2 (ja) | 研磨パッド及びその製造方法 | |
| JP2014233835A (ja) | 軟質かつコンディショニング可能な研磨層を有する多層化学機械研磨パッドスタック | |
| TW202100713A (zh) | 低碎屑氟聚合物複合cmp 拋光墊 | |
| JP2002231669A (ja) | 半導体ウェーハ用研磨布およびこれを用いた半導体ウェーハの研磨方法 | |
| KR100741216B1 (ko) | 반도체 웨이퍼의 제조방법 및 반도체 웨이퍼 | |
| US6607428B2 (en) | Material for use in carrier and polishing pads | |
| JP2017035773A (ja) | ケミカルメカニカル研磨パッド複合研磨層調合物 | |
| TW202045610A (zh) | 薄膜氟聚合物複合cmp拋光墊 | |
| US20060099891A1 (en) | Method of chemical mechanical polishing, and a pad provided therefore | |
| TWI612084B (zh) | 研磨墊的製造方法 | |
| JPH1110523A (ja) | 研磨装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071026 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071026 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100720 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20101214 |