JP6243009B2 - GaN単結晶材料の研磨加工方法 - Google Patents
GaN単結晶材料の研磨加工方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/06—Polysulfones; Polyethersulfones
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Description
Ehmin(mV)=−27.2pH+738.4 ・・・(3)
Ehmax(mV)=−84.0pH+1481 ・・・(4)
以下、本発明者等が行った実験例1を説明する。先ず、図1に示す研磨加工装置10と同様に構成された装置を用い、以下に示す遊離砥粒研磨条件にて、硬質ポリウレタンから成る研磨砥粒遊離型研磨パッドと研磨砥粒とを用いるとともに、酸化還元電位については過マンガン酸カリウムおよびチオ硫酸カリウムを用い、pHについては硫酸と水酸化カリウムを用いて、pHおよび酸化還元電位Ehが相互に異なるように調整され、且つ研磨砥粒が12.5重量%となるように分散された14種類の酸化性の研磨液について、10mm×10mm×0.35mmのGaN単結晶板である試料1〜試料14の研磨試験をそれぞれ行った。
研磨加工装置 :エンギスハイプレス EJW−380
研磨パッド :硬質発泡ポリウレタン製 300mmφ×2mmt(ニッタハース社製のIC1000)
研磨パッド回転数 :60rpm
被研磨体(試料) :GaN単結晶板(0001)
被研磨体の形状 :10mm×10mm×0.35mmの板が3個
被研磨体回転数 :60rpm
研磨荷重(圧力) :52.2kPa
研磨液供給量 :10ml/min
研磨時間 :120min
コンディショナー :SD#325(電着ダイヤモンドホイール)
Ehmin(mV)=−33.9pH+750 ・・・(1)
Ehmax(mV)=−82.1pH+1491 ・・・(2)
以下、本発明者等が行った実験例2を説明する。先ず、図1に示す研磨加工装置10と同様に構成された装置を用い、以下に示す固定砥粒研磨条件にて、砥粒内包研磨パッドを用いるとともに、酸化還元電位については過マンガン酸カリウムおよびチオ硫酸カリウムを用い、pHについては硫酸と水酸化カリウムを用いて、pHおよび酸化還元電位Ehが異なるように調整された16種類の酸化性の研磨液について、10mm×10mm×0.35mmのGaN単結晶板である試料15〜試料30の研磨試験をそれぞれ行った。この研磨加工において、各試料15〜試料30に用いられる砥粒内包研磨パッドは、独立気孔を有する母材樹脂と、その母材樹脂に一部が固着し或いは一部が母材樹脂から分離した状態でその独立気孔内に収容された研磨砥粒とを有するものであり、たとえばシリカ(ρ=2.20)或いはアルミナ(ρ=3.98)が10体積%、母材樹脂としてのエポキシ樹脂(ρ=1.15)が55体積%、独立気孔が35体積%から構成されている。また、試料31〜32に用いられる砥粒内包研磨パッドは、連通気孔を有する母材樹脂と、その母材樹脂内に収容された研磨砥粒とを有するものであり、たとえばシリカ(ρ=2.20)が32体積%、母材樹脂としてのポリエーテルサルホン(PES)樹脂(ρ=1.35)が33体積%、連通気孔が35体積%から構成されている。砥粒内包研磨パッドは、たとえば500×500×2mmのシート状に成形し、300mmφの円形に切り出されたものである。
研磨加工装置 :エンギスハイプレス EJW−380
研磨パッド :砥粒内包パッド 300mmφ×2mmt
研磨パッド回転数 :60rpm
被研磨体(試料) :GaN単結晶板(0001)
被研磨体の形状 :10mm×10mm×0.35mmの板が3個
被研磨体回転数 :60rpm
研磨荷重(圧力) :52.2kPa
研磨液供給量 :10ml/min
研磨時間 :120min
コンディショナー :SD#325(電着ダイヤモンドホイール)
Ehmin(mV)=−27.2pH+738.4 ・・・(3)
Ehmax(mV)=−84pH+1481 ・・・(4)
12:研磨定盤
14:研磨パッド(研磨砥粒遊離型研磨パッド、研磨砥粒固定型研磨パッド)
16:被研磨体(GaN単結晶基板)
20:研磨液
26:研磨砥粒
30:連通気孔
32:母材樹脂
Claims (3)
- 研磨液および複数の研磨砥粒の存在下において研磨砥粒固定型研磨パッドを用いて結晶材料の表面を平滑に研磨するためのCMP法による研磨加工方法であって、
前記結晶材料は、GaNの単結晶であり、
前記研磨液は、酸化還元電位がEhmin(式(3)で定められる値)mV〜Ehmax(式(4)で定められる値)mVであり、且つpHが0.12〜5.7である酸化性の研磨液であることを特徴とする研磨加工方法。
Ehmin(mV)=−27.2pH+738.4 ・・・(3)
Ehmax(mV)=−84pH+1481 ・・・(4) - 前記研磨砥粒固定型研磨パッドは、独立気孔または連通気孔を有する母材樹脂を有し、
前記複数の研磨砥粒は、前記母材樹脂に形成された独立気孔または連通気孔内に一部が固着し或いは一部が該母材樹脂から分離した状態で該母材樹脂内に収容されている
ことを特徴とする請求項1の研磨加工方法。 - 前記研磨砥粒固定型研磨パッドの母剤樹脂は、エポキシ樹脂またはポリエーテルサルホン(PES)樹脂から構成されたものである
ことを特徴とする請求項1の研磨加工方法。
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TWI641038B (zh) * | 2016-08-02 | 2018-11-11 | 兆遠科技股份有限公司 | 拋光液供給系統 |
JP7409815B2 (ja) | 2019-09-26 | 2024-01-09 | 株式会社ノリタケカンパニーリミテド | 半導体ウェハの研磨方法 |
CN115091338A (zh) * | 2022-06-29 | 2022-09-23 | 中国地质大学(北京) | 通过加入金属氧化物纳米颗粒提高单晶金刚石抛光效率的方法 |
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JP2006179647A (ja) * | 2004-12-22 | 2006-07-06 | Renesas Technology Corp | 半導体装置の製造方法及び半導体製造装置 |
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JP5336699B2 (ja) | 2006-09-15 | 2013-11-06 | 株式会社ノリタケカンパニーリミテド | 結晶材料の研磨加工方法 |
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EP3128536A4 (en) | 2018-06-20 |
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