JP5643183B2 - ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 - Google Patents
ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 Download PDFInfo
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- JP5643183B2 JP5643183B2 JP2011500789A JP2011500789A JP5643183B2 JP 5643183 B2 JP5643183 B2 JP 5643183B2 JP 2011500789 A JP2011500789 A JP 2011500789A JP 2011500789 A JP2011500789 A JP 2011500789A JP 5643183 B2 JP5643183 B2 JP 5643183B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/02—Light metals
- C23F3/03—Light metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
各基材が独立してアルミニウム−銅、チタン、タンタル及びTEOSを含む2つの類似した組の基材を2つの異なる研磨用組成物(研磨用組成物1A及び1B)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、ポリアクリル酸を200ppm、Kathon 886 MWの殺生物剤を14ppm、及び過酸化水素を3wt%含んでいた。研磨用組成物1A及び1Bは、それぞれ0.5wt%及び1.0wt%の乳酸をさらに含んでいた。
2つの類似の基材を、パターニングされたTEOS層上に、順にチタン、次いでアルミニウム−銅を堆積させることにより調製した。これらの基材を2つの異なる研磨用組成物(研磨用組成物2A及び2B)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、ポリアクリル酸を200ppm、Kathon 886 MWの殺生物剤を14ppm、及び過酸化水素を3wt%含んでいた。研磨用組成物2A及び2Bは、それぞれ0.5wt%及び1.0wt%の乳酸をさらに含んでいた。
アルミニウム−銅を含む4つの類似の基材を4つの異なる研磨用組成物(研磨用組成物3A〜3D)で別々に40秒間研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、及び過酸化水素を3wt%含んでいた。研磨用組成物3A〜3Dは、乳酸及びポリアクリル酸を表3に記載される量においてさらに含んでいた。
各基材が独立してアルミニウム−銅、チタン及びTEOSを含む2つの類似した組の基材を2つの異なる研磨用組成物(研磨用組成物4A及び4B)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、及び過酸化水素を3wt%含んでいた。研磨用組成物4Aは3wt%のコハク酸をさらに含んでいた。研磨用組成物4Bは1.5wt%の乳酸をさらに含んでいた。
各基材が独立してアルミニウム−銅及びチタンを含む3つの類似した組の基材を3つの異なる研磨用組成物(研磨用組成物5A〜5C)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、乳酸を0.5wt%、及び過酸化水素を3wt%含んでいた。研磨用組成物5Aは追加の成分を含んでいなかった。研磨用組成物5B及び5Cは、それぞれ0.02wt%及び0.1wt%のポリアクリル酸をさらに含んでいた。
アルミニウム−銅を含む2つの類似の基材を2つの異なる研磨用組成物(研磨用組成物6A及び6B)で研磨した。各研磨用組成物は、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、乳酸を0.5wt%、ポリアクリル酸を0.02wt%、及び過酸化水素を3wt%含んでいた。研磨用組成物6AのpHは3.5であり、研磨用組成物6BのpHは8.4であった。
9つの類似の基材を、パターニングされたTEOS層上に、順にチタン、次いでアルミニウム−銅を堆積させることにより調製した。次いで、これらの基材を8つの異なる研磨用組成物(研磨用組成物7A〜7H)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、殺生物剤を14ppm、及び過酸化水素を3wt%含んでいた。研磨用組成物7A(対照標準)は追加の成分を全く含んでいなかった。研磨用組成物7B(本発明)は0.02wt%のポリアクリル酸をさらに含んでいた。研磨用組成物7C(比較)は0.02wt%のポリマレイン酸をさらに含んでいた。研磨用組成物7D(比較)は0.045wt%のポリマレイン酸をさらに含んでいた。研磨用組成物7E(比較)は0.001wt%のポリビニルアルコールをさらに含んでいた。研磨用組成物7F(比較)は0.02wt%のポリビニルアルコールをさらに含んでいた。研磨用組成物7G(比較)は0.001wt%のポリスチレンスルホン酸をさらに含んでいた。研磨用組成物7H(比較)は0.02wt%のポリスチレンスルホン酸をさらに含んでいた。2つの基材を研磨用組成物7B(本発明)で研磨した。
Claims (13)
- アルミニウムを含む少なくとも1つの金属層、アルミニウム−銅を含む少なくとも1つの金属層、又はチタンを含む少なくとも1つの金属層を含む基材を研磨するための化学機械研磨用組成物であって、
(a)ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)又はポリスチレンスルホン酸であるアニオン性ポリマーで処理された、アルミナ粒子からなる研磨剤、
(b)α−ヒドロキシカルボン酸、
(c)少なくとも1つの金属を酸化する酸化剤、
(d)0.01wt%〜0.2wt%のポリアクリル酸、
(e)任意選択でカルシウム含有化合物、
(f)任意選択で殺生物剤、
(g)任意選択でpH調整剤、及び
(h)水
から本質的になり、2〜4のpHを有する、化学機械研磨用組成物。 - 0.1wt%〜1wt%の研磨剤を含む、請求項1に記載の研磨用組成物。
- 前記α−ヒドロキシカルボン酸が乳酸である、請求項1に記載の研磨用組成物。
- 0.5wt%〜2wt%の乳酸を含む、請求項3に記載の研磨用組成物。
- 前記酸化剤が、過硫酸アンモニウム、硝酸第二鉄、及びそれらの組み合わせからなる群より選択される、請求項1に記載の研磨用組成物。
- 前記酸化剤が過酸化水素である、請求項1に記載の研磨用組成物。
- 0.001wt%〜0.05wt%のカルシウム含有化合物を含む、請求項1に記載の研磨用組成物。
- (i)基材を研磨パッド及び請求項1〜7のいずれか1項に記載の化学機械研磨用組成物と接触させる工程、
(ii)前記基材に対して前記研磨パッドを前記化学機械研磨用組成物をそれらの間に置いて動かす工程、並びに
(iii)前記基材の少なくとも一部をすり減らして該基材を研磨する工程
を含む、基材を化学機械研磨する方法。 - (i)アルミニウムを含む少なくとも1つの金属層、アルミニウム−銅を含む少なくとも1つの金属層、又はチタンを含む少なくとも1つの金属層を含む基材を用意する工程、
(ii)前記基材を研磨パッド及び化学機械研磨用組成物であって、
(a)ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)又はポリスチレンスルホン酸であるアニオン性ポリマーで処理された、アルミナ粒子からなる研磨剤、
(b)α−ヒドロキシカルボン酸、
(c)少なくとも1つの金属を酸化する酸化剤、
(d)0.01wt%〜0.2wt%のポリアクリル酸、
(e)任意選択でカルシウム含有化合物、
(f)任意選択で殺生物剤、
(g)任意選択でpH調整剤、及び
(h)水
を含み、2〜4のpHを有する化学機械研磨用組成物と接触させる工程、
(iii)前記基材に対して前記研磨パッドを前記化学機械研磨用組成物をそれらの間に置いて動かす工程、並びに
(iv)前記基材の少なくとも一部をすり減らして該基材を研磨する工程
を含む、基材を化学機械研磨する方法。 - 前記基材がアルミニウムの少なくとも1つの層を含み、該アルミニウムの少なくとも一部が除去されて前記基材が研磨される、請求項8又は9に記載の方法。
- 前記基材がチタンの少なくとも1つの層をさらに含み、該チタンの少なくとも一部が除去されて前記基材が研磨される、請求項10に記載の方法。
- 前記基材が誘電体材料の少なくとも1つの層をさらに含み、該誘電体材料の少なくとも一部が除去されて前記基材が研磨される、請求項10に記載の方法。
- 前記基材がアルミニウムと銅の合金の少なくとも1つの層を含み、アルミニウムと銅の該合金の少なくとも一部が除去されて前記基材が研磨される、請求項8又は9に記載の方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/052,970 US8425797B2 (en) | 2008-03-21 | 2008-03-21 | Compositions for polishing aluminum/copper and titanium in damascene structures |
| US12/052,970 | 2008-03-21 | ||
| PCT/US2009/001603 WO2009117070A2 (en) | 2008-03-21 | 2009-03-13 | Compositions for polishing aluminum/copper and titanium in damascene structures |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013123913A Division JP2013179360A (ja) | 2008-03-21 | 2013-06-12 | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 |
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| Publication Number | Publication Date |
|---|---|
| JP2011517507A JP2011517507A (ja) | 2011-06-09 |
| JP5643183B2 true JP5643183B2 (ja) | 2014-12-17 |
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| JP2011500789A Active JP5643183B2 (ja) | 2008-03-21 | 2009-03-13 | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 |
| JP2013123913A Pending JP2013179360A (ja) | 2008-03-21 | 2013-06-12 | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 |
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| JP2013123913A Pending JP2013179360A (ja) | 2008-03-21 | 2013-06-12 | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US8425797B2 (ja) |
| EP (1) | EP2268761B1 (ja) |
| JP (2) | JP5643183B2 (ja) |
| KR (1) | KR101440667B1 (ja) |
| CN (1) | CN101978019B (ja) |
| IL (1) | IL207610A (ja) |
| SG (1) | SG189689A1 (ja) |
| TW (1) | TWI406918B (ja) |
| WO (1) | WO2009117070A2 (ja) |
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| US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
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| US20140054266A1 (en) * | 2012-08-24 | 2014-02-27 | Wiechang Jin | Compositions and methods for selective polishing of platinum and ruthenium materials |
| KR20150009914A (ko) * | 2013-07-17 | 2015-01-27 | 삼성전자주식회사 | 유기막 연마용 cmp 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법 |
| CN104559796B (zh) * | 2013-10-14 | 2018-01-26 | 天津西美半导体材料有限公司 | 应用于超硬表面的表面改性氧化铝抛光液的制备方法 |
| CN104745084B (zh) * | 2013-12-25 | 2018-09-14 | 安集微电子(上海)有限公司 | 一种用于铝的化学机械抛光液及使用方法 |
| US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| TWI561620B (en) * | 2014-06-20 | 2016-12-11 | Cabot Microelectronics Corp | Cmp slurry compositions and methods for aluminum polishing |
| KR101682085B1 (ko) * | 2015-07-09 | 2016-12-02 | 주식회사 케이씨텍 | 텅스텐 연마용 슬러리 조성물 |
| CN105369253B (zh) * | 2015-10-21 | 2017-11-17 | 上海铝通化学科技有限公司 | 防冲孔铝化学抛光添加剂及其应用 |
| WO2017130749A1 (ja) * | 2016-01-28 | 2017-08-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US20190085205A1 (en) * | 2017-09-15 | 2019-03-21 | Cabot Microelectronics Corporation | NITRIDE INHIBITORS FOR HIGH SELECTIVITY OF TiN-SiN CMP APPLICATIONS |
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| US6740589B2 (en) | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
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| US6821309B2 (en) * | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
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| US7485241B2 (en) * | 2003-09-11 | 2009-02-03 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
| US7427361B2 (en) * | 2003-10-10 | 2008-09-23 | Dupont Air Products Nanomaterials Llc | Particulate or particle-bound chelating agents |
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| US7264641B2 (en) * | 2003-11-10 | 2007-09-04 | Cabot Microelectronics Corporation | Polishing pad comprising biodegradable polymer |
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| US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
| KR100630737B1 (ko) | 2005-02-04 | 2006-10-02 | 삼성전자주식회사 | 금속 cmp 후 세정액 및 이를 이용한 반도체 소자의금속 배선 형성 방법 |
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| US7803203B2 (en) * | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| US7265055B2 (en) * | 2005-10-26 | 2007-09-04 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
| US7820067B2 (en) * | 2006-03-23 | 2010-10-26 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
-
2008
- 2008-03-21 US US12/052,970 patent/US8425797B2/en active Active
-
2009
- 2009-03-05 TW TW098107164A patent/TWI406918B/zh active
- 2009-03-13 JP JP2011500789A patent/JP5643183B2/ja active Active
- 2009-03-13 SG SG2013020573A patent/SG189689A1/en unknown
- 2009-03-13 KR KR1020107023419A patent/KR101440667B1/ko active Active
- 2009-03-13 CN CN200980110032.4A patent/CN101978019B/zh active Active
- 2009-03-13 EP EP09722067.7A patent/EP2268761B1/en not_active Not-in-force
- 2009-03-13 WO PCT/US2009/001603 patent/WO2009117070A2/en not_active Ceased
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2013
- 2013-03-18 US US13/846,126 patent/US8623767B2/en active Active
- 2013-06-12 JP JP2013123913A patent/JP2013179360A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SG189689A1 (en) | 2013-05-31 |
| WO2009117070A2 (en) | 2009-09-24 |
| TW200946622A (en) | 2009-11-16 |
| KR20110007143A (ko) | 2011-01-21 |
| EP2268761B1 (en) | 2016-12-21 |
| US20130224955A1 (en) | 2013-08-29 |
| KR101440667B1 (ko) | 2014-09-19 |
| WO2009117070A3 (en) | 2009-12-17 |
| US8623767B2 (en) | 2014-01-07 |
| US8425797B2 (en) | 2013-04-23 |
| CN101978019B (zh) | 2014-07-02 |
| JP2011517507A (ja) | 2011-06-09 |
| TWI406918B (zh) | 2013-09-01 |
| IL207610A0 (en) | 2010-12-30 |
| EP2268761A2 (en) | 2011-01-05 |
| CN101978019A (zh) | 2011-02-16 |
| JP2013179360A (ja) | 2013-09-09 |
| IL207610A (en) | 2015-01-29 |
| EP2268761A4 (en) | 2011-12-07 |
| US20090236559A1 (en) | 2009-09-24 |
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