JP2011517507A - ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 - Google Patents
ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 Download PDFInfo
- Publication number
- JP2011517507A JP2011517507A JP2011500789A JP2011500789A JP2011517507A JP 2011517507 A JP2011517507 A JP 2011517507A JP 2011500789 A JP2011500789 A JP 2011500789A JP 2011500789 A JP2011500789 A JP 2011500789A JP 2011517507 A JP2011517507 A JP 2011517507A
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- substrate
- aluminum
- polishing
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 201
- 239000000203 mixture Substances 0.000 title claims abstract description 171
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims description 36
- 239000010936 titanium Substances 0.000 title claims description 36
- 229910052719 titanium Inorganic materials 0.000 title claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 29
- 229910052782 aluminium Inorganic materials 0.000 title claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 5
- 229910052802 copper Inorganic materials 0.000 title claims description 5
- 239000010949 copper Substances 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 60
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229920002125 Sokalan® Polymers 0.000 claims abstract description 41
- 239000004584 polyacrylic acid Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000007800 oxidant agent Substances 0.000 claims abstract description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229920000642 polymer Polymers 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 27
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011575 calcium Substances 0.000 claims abstract description 23
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000003139 biocide Substances 0.000 claims abstract description 19
- 230000003115 biocidal effect Effects 0.000 claims abstract description 18
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 12
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 38
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 28
- 239000004310 lactic acid Substances 0.000 claims description 19
- 235000014655 lactic acid Nutrition 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 claims description 10
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 claims description 10
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 6
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 5
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229920006318 anionic polymer Polymers 0.000 claims description 4
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims 4
- 239000003989 dielectric material Substances 0.000 claims 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 31
- 239000010410 layer Substances 0.000 description 29
- 239000012141 concentrate Substances 0.000 description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 11
- 239000011164 primary particle Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 5
- 229910001424 calcium ion Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000001737 promoting effect Effects 0.000 description 5
- 239000007787 solid Chemical group 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- QYYMDNHUJFIDDQ-UHFFFAOYSA-N 5-chloro-2-methyl-1,2-thiazol-3-one;2-methyl-1,2-thiazol-3-one Chemical compound CN1SC=CC1=O.CN1SC(Cl)=CC1=O QYYMDNHUJFIDDQ-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003124 biologic agent Substances 0.000 description 2
- 159000000007 calcium salts Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229920001444 polymaleic acid Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- AFENDNXGAFYKQO-UHFFFAOYSA-N 2-hydroxybutyric acid Chemical compound CCC(O)C(O)=O AFENDNXGAFYKQO-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 239000004343 Calcium peroxide Substances 0.000 description 1
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 210000000476 body water Anatomy 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 229960004995 magnesium peroxide Drugs 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229940045872 sodium percarbonate Drugs 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/02—Light metals
- C23F3/03—Light metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Composite Materials (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
各基材が独立してアルミニウム−銅、チタン、タンタル及びTEOSを含む2つの類似した組の基材を2つの異なる研磨用組成物(研磨用組成物1A及び1B)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、ポリアクリル酸を200ppm、Kathon 886 MWの殺生物剤を14ppm、及び過酸化水素を3wt%含んでいた。研磨用組成物1A及び1Bは、それぞれ0.5wt%及び1.0wt%の乳酸をさらに含んでいた。
2つの類似の基材を、パターニングされたTEOS層上に、順にチタン、次いでアルミニウム−銅を堆積させることにより調製した。これらの基材を2つの異なる研磨用組成物(研磨用組成物2A及び2B)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、ポリアクリル酸を200ppm、Kathon 886 MWの殺生物剤を14ppm、及び過酸化水素を3wt%含んでいた。研磨用組成物2A及び2Bは、それぞれ0.5wt%及び1.0wt%の乳酸をさらに含んでいた。
アルミニウム−銅を含む4つの類似の基材を4つの異なる研磨用組成物(研磨用組成物3A〜3D)で別々に40秒間研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、及び過酸化水素を3wt%含んでいた。研磨用組成物3A〜3Dは、乳酸及びポリアクリル酸を表3に記載される量においてさらに含んでいた。
各基材が独立してアルミニウム−銅、チタン及びTEOSを含む2つの類似した組の基材を2つの異なる研磨用組成物(研磨用組成物4A及び4B)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、及び過酸化水素を3wt%含んでいた。研磨用組成物4Aは3wt%のコハク酸をさらに含んでいた。研磨用組成物4Bは1.5wt%の乳酸をさらに含んでいた。
各基材が独立してアルミニウム−銅及びチタンを含む3つの類似した組の基材を3つの異なる研磨用組成物(研磨用組成物5A〜5C)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、乳酸を0.5wt%、及び過酸化水素を3wt%含んでいた。研磨用組成物5Aは追加の成分を含んでいなかった。研磨用組成物5B及び5Cは、それぞれ0.02wt%及び0.1wt%のポリアクリル酸をさらに含んでいた。
アルミニウム−銅を含む2つの類似の基材を2つの異なる研磨用組成物(研磨用組成物6A及び6B)で研磨した。各研磨用組成物は、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、乳酸を0.5wt%、ポリアクリル酸を0.02wt%、及び過酸化水素を3wt%含んでいた。研磨用組成物6AのpHは3.5であり、研磨用組成物6BのpHは8.4であった。
9つの類似の基材を、パターニングされたTEOS層上に、順にチタン、次いでアルミニウム−銅を堆積させることにより調製した。次いで、これらの基材を8つの異なる研磨用組成物(研磨用組成物7A〜7H)で研磨した。研磨用組成物のそれぞれは、pH3.5において、ポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)で処理されたα−アルミナを0.5wt%、殺生物剤を14ppm、及び過酸化水素を3wt%含んでいた。研磨用組成物7A(対照標準)は追加の成分を全く含んでいなかった。研磨用組成物7B(本発明)は0.02wt%のポリアクリル酸をさらに含んでいた。研磨用組成物7C(比較)は0.02wt%のポリマレイン酸をさらに含んでいた。研磨用組成物7D(比較)は0.045wt%のポリマレイン酸をさらに含んでいた。研磨用組成物7E(比較)は0.001wt%のポリビニルアルコールをさらに含んでいた。研磨用組成物7F(比較)は0.02wt%のポリビニルアルコールをさらに含んでいた。研磨用組成物7G(比較)は0.001wt%のポリスチレンスルホン酸をさらに含んでいた。研磨用組成物7H(比較)は0.02wt%のポリスチレンスルホン酸をさらに含んでいた。2つの基材を研磨用組成物7B(本発明)で研磨した。
Claims (29)
- (a)任意選択でポリマーで処理された、アルミナ粒子からなる研磨剤、
(b)α−ヒドロキシカルボン酸、
(c)少なくとも1つの金属を酸化する酸化剤、
(d)0.01wt%〜0.2wt%のポリアクリル酸、
(e)任意選択でカルシウム含有化合物、
(f)任意選択で殺生物剤、
(g)任意選択でpH調整剤、及び
(h)水
から本質的になり、2〜6のpHを有する、化学機械研磨用組成物。 - 前記研磨剤がアニオン性ポリマーで処理されたアルミナからなる、請求項1に記載の研磨用組成物。
- 前記負に帯電したポリマーがポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)又はポリスチレンスルホン酸である、請求項2に記載の研磨用組成物。
- 0.1wt%〜1wt%の研磨剤を含む、請求項1に記載の研磨用組成物。
- 前記α−ヒドロキシカルボン酸が乳酸である、請求項1に記載の研磨用組成物。
- 0.5wt%〜2wt%の乳酸を含む、請求項5に記載の研磨用組成物。
- 前記酸化剤が、過硫酸アンモニウム、硝酸第二鉄、及びそれらの組み合わせからなる群より選択される、請求項1に記載の研磨用組成物。
- 前記酸化剤が過酸化水素である、請求項1に記載の研磨用組成物。
- 0.001wt%〜0.05wt%のカルシウム含有化合物を含む、請求項1に記載の研磨用組成物。
- 2〜4のpHを有する、請求項1に記載の研磨用組成物。
- (i)基材を研磨パッド及び化学機械研磨用組成物であって、
(a)任意選択でポリマーで処理された、アルミナ粒子からなる研磨剤、
(b)α−ヒドロキシカルボン酸、
(c)少なくとも1つの金属を酸化する酸化剤、
(d)0.01wt%〜0.2wt%のポリアクリル酸、
(e)任意選択でカルシウム含有化合物、
(f)任意選択で殺生物剤、
(g)任意選択でpH調整剤、及び
(h)水
から本質的になり、2〜6のpHを有する化学機械研磨用組成物と接触させる工程、
(ii)前記基材に対して前記研磨パッドを前記化学機械研磨用組成物をそれらの間に置いて動かす工程、並びに
(iii)前記基材の少なくとも一部をすり減らして該基材を研磨する工程
を含む、基材を化学機械研磨する方法。 - 前記研磨剤がアニオン性ポリマーで処理されたアルミナからなる、請求項11に記載の方法。
- 前記負に帯電したポリマーがポリ(2−アクリルアミド−2−メチルプロパンスルホン酸)又はポリスチレンスルホン酸である、請求項12に記載の方法。
- 前記研磨用組成物が0.1wt%〜1wt%の研磨剤を含む、請求項11に記載の方法。
- 前記α−ヒドロキシカルボン酸が乳酸である、請求項11に記載の方法。
- 前記研磨用組成物が0.5wt%〜2wt%の乳酸を含む、請求項15に記載の方法。
- 前記酸化剤が、過硫酸アンモニウム、硝酸第二鉄、及びそれらの組み合わせからなる群より選択される、請求項11に記載の方法。
- 前記酸化剤が過酸化水素である、請求項11に記載の方法。
- 前記研磨用組成物が0.001wt%〜0.05wt%のカルシウム含有化合物を含む、請求項11に記載の方法。
- 前記研磨用組成物が2〜4のpHを有する、請求項11に記載の方法。
- 前記基材がアルミニウムの少なくとも1つの層を含み、該アルミニウムの少なくとも一部が除去されて前記基材が研磨される、請求項11に記載の方法。
- 前記基材がチタンの少なくとも1つの層をさらに含み、該チタンの少なくとも一部が除去されて前記基材が研磨される、請求項21に記載の方法。
- 前記基材が誘電体材料の少なくとも1つの層をさらに含み、該誘電体材料の少なくとも一部が除去されて前記基材が研磨される、請求項21に記載の方法。
- 前記基材がアルミニウムと銅の合金の少なくとも1つの層を含み、アルミニウムと銅の該合金の少なくとも一部が除去されて前記基材が研磨される、請求項11に記載の方法。
- (i)アルミニウム、チタン又はアルミニウムと銅の合金の少なくとも1つの層を含む基材を用意する工程、
(ii)前記基材を研磨パッド及び化学機械研磨用組成物であって、
(a)任意選択でポリマーで処理された、アルミナ粒子からなる研磨剤、
(b)α−ヒドロキシカルボン酸、
(c)少なくとも1つの金属を酸化する酸化剤、
(d)0.01wt%〜0.2wt%のポリアクリル酸、
(e)任意選択でカルシウム含有化合物、
(f)任意選択で殺生物剤、
(g)任意選択でpH調整剤、及び
(h)水
を含み、2〜6のpHを有する化学機械研磨用組成物と接触させる工程、
(iii)前記基材に対して前記研磨パッドを前記化学機械研磨用組成物をそれらの間に置いて動かす工程、並びに
(iv)前記基材の少なくとも一部をすり減らして該基材を研磨する工程
を含む、基材を化学機械研磨する方法。 - 前記基材がアルミニウムの少なくとも1つの層を含み、該アルミニウムの少なくとも一部が除去されて前記基材が研磨される、請求項25に記載の方法。
- 前記基材がチタンの少なくとも1つの層をさらに含み、該チタンの少なくとも一部が除去されて前記基材が研磨される、請求項26に記載の方法。
- 前記基材が誘電体材料の少なくとも1つの層をさらに含み、該誘電体材料の少なくとも一部が除去されて前記基材が研磨される、請求項26に記載の方法。
- 前記基材がアルミニウムと銅の合金の少なくとも1つの層を含み、アルミニウムと銅の該合金の少なくとも一部が除去されて前記基材が研磨される、請求項25に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/052,970 US8425797B2 (en) | 2008-03-21 | 2008-03-21 | Compositions for polishing aluminum/copper and titanium in damascene structures |
US12/052,970 | 2008-03-21 | ||
PCT/US2009/001603 WO2009117070A2 (en) | 2008-03-21 | 2009-03-13 | Compositions for polishing aluminum/copper and titanium in damascene structures |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013123913A Division JP2013179360A (ja) | 2008-03-21 | 2013-06-12 | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011517507A true JP2011517507A (ja) | 2011-06-09 |
JP5643183B2 JP5643183B2 (ja) | 2014-12-17 |
Family
ID=41087959
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011500789A Active JP5643183B2 (ja) | 2008-03-21 | 2009-03-13 | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 |
JP2013123913A Pending JP2013179360A (ja) | 2008-03-21 | 2013-06-12 | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013123913A Pending JP2013179360A (ja) | 2008-03-21 | 2013-06-12 | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 |
Country Status (9)
Country | Link |
---|---|
US (2) | US8425797B2 (ja) |
EP (1) | EP2268761B1 (ja) |
JP (2) | JP5643183B2 (ja) |
KR (1) | KR101440667B1 (ja) |
CN (1) | CN101978019B (ja) |
IL (1) | IL207610A (ja) |
SG (1) | SG189689A1 (ja) |
TW (1) | TWI406918B (ja) |
WO (1) | WO2009117070A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015021132A (ja) * | 2013-07-17 | 2015-02-02 | サムスン エレクトロニクス カンパニー リミテッド | 有機膜研磨に用いられるcmp用スラリー組成物、これを利用し、cmp処理を行う方法及びこれを利用する半導体装置の製造方法 |
JP2017527446A (ja) * | 2014-06-20 | 2017-09-21 | キャボット マイクロエレクトロニクス コーポレイション | アルミニウムの研磨のためのcmpスラリー組成物及び方法 |
JP2020534680A (ja) * | 2017-09-15 | 2020-11-26 | キャボット マイクロエレクトロニクス コーポレイション | TiN−SiN CMP用途の高選択性のための窒化物抑制剤 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
JP6325441B2 (ja) * | 2012-07-17 | 2018-05-16 | 株式会社フジミインコーポレーテッド | 合金材料研磨用組成物及びそれを用いた合金材料の製造方法 |
US20140054266A1 (en) * | 2012-08-24 | 2014-02-27 | Wiechang Jin | Compositions and methods for selective polishing of platinum and ruthenium materials |
CN104559796B (zh) * | 2013-10-14 | 2018-01-26 | 天津西美半导体材料有限公司 | 应用于超硬表面的表面改性氧化铝抛光液的制备方法 |
CN104745084B (zh) * | 2013-12-25 | 2018-09-14 | 安集微电子(上海)有限公司 | 一种用于铝的化学机械抛光液及使用方法 |
US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
KR101682085B1 (ko) * | 2015-07-09 | 2016-12-02 | 주식회사 케이씨텍 | 텅스텐 연마용 슬러리 조성물 |
CN105369253B (zh) * | 2015-10-21 | 2017-11-17 | 上海铝通化学科技有限公司 | 防冲孔铝化学抛光添加剂及其应用 |
US20190031919A1 (en) * | 2016-01-28 | 2019-01-31 | Fujimi Incorporated | Polishing composition |
US11043151B2 (en) * | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
US20200332150A1 (en) * | 2019-04-17 | 2020-10-22 | Cabot Microelectronics Corporation | Surface coated abrasive particles for tungsten buff applications |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050595A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
JP2004532509A (ja) * | 2001-01-22 | 2004-10-21 | キャボット マイクロエレクトロニクス コーポレイション | 固体触媒を含むcmp研磨パッド |
JP2006502579A (ja) * | 2002-10-11 | 2006-01-19 | キャボット マイクロエレクトロニクス コーポレイション | 両親媒性非イオン性界面活性剤を利用したcmp法 |
US20060096179A1 (en) * | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
US20070090094A1 (en) * | 2005-10-26 | 2007-04-26 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
WO2007111855A2 (en) * | 2006-03-23 | 2007-10-04 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
WO2008027421A1 (en) * | 2006-08-30 | 2008-03-06 | Cabot Microelectronics Corporation | Compositions and methods for cmp of semiconductor materials |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5840381A (en) * | 1996-04-25 | 1998-11-24 | Aicello Chemical Co., Ltd. | Corrosion inhibiting laminate sheets and containers |
US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US6083840A (en) | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
TW501197B (en) | 1999-08-17 | 2002-09-01 | Hitachi Chemical Co Ltd | Polishing compound for chemical mechanical polishing and method for polishing substrate |
KR100400030B1 (ko) | 2000-06-05 | 2003-09-29 | 삼성전자주식회사 | 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법 |
US20020062600A1 (en) * | 2000-08-11 | 2002-05-30 | Mandigo Glenn C. | Polishing composition |
JP3768401B2 (ja) | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP3816743B2 (ja) * | 2000-11-24 | 2006-08-30 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US6740589B2 (en) | 2000-11-30 | 2004-05-25 | Showa Denko Kabushiki Kaisha | Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same |
US20030104770A1 (en) | 2001-04-30 | 2003-06-05 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
US6821897B2 (en) | 2001-12-05 | 2004-11-23 | Cabot Microelectronics Corporation | Method for copper CMP using polymeric complexing agents |
US6620215B2 (en) * | 2001-12-21 | 2003-09-16 | Dynea Canada, Ltd. | Abrasive composition containing organic particles for chemical mechanical planarization |
US7132058B2 (en) | 2002-01-24 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tungsten polishing solution |
US7513920B2 (en) | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
US6821309B2 (en) * | 2002-02-22 | 2004-11-23 | University Of Florida | Chemical-mechanical polishing slurry for polishing of copper or silver films |
US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
US6727052B1 (en) * | 2002-12-20 | 2004-04-27 | Eastman Kodak Company | Multilayer photographic film and an imaging element made of said base |
US7300603B2 (en) | 2003-08-05 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
US7485241B2 (en) * | 2003-09-11 | 2009-02-03 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
US20050076579A1 (en) | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Bicine/tricine containing composition and method for chemical-mechanical planarization |
US7427361B2 (en) * | 2003-10-10 | 2008-09-23 | Dupont Air Products Nanomaterials Llc | Particulate or particle-bound chelating agents |
US7264641B2 (en) * | 2003-11-10 | 2007-09-04 | Cabot Microelectronics Corporation | Polishing pad comprising biodegradable polymer |
US7390744B2 (en) | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US20050211950A1 (en) * | 2004-03-24 | 2005-09-29 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
KR100630737B1 (ko) | 2005-02-04 | 2006-10-02 | 삼성전자주식회사 | 금속 cmp 후 세정액 및 이를 이용한 반도체 소자의금속 배선 형성 방법 |
US20060219663A1 (en) | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
-
2008
- 2008-03-21 US US12/052,970 patent/US8425797B2/en active Active
-
2009
- 2009-03-05 TW TW098107164A patent/TWI406918B/zh active
- 2009-03-13 KR KR1020107023419A patent/KR101440667B1/ko active IP Right Grant
- 2009-03-13 JP JP2011500789A patent/JP5643183B2/ja active Active
- 2009-03-13 CN CN200980110032.4A patent/CN101978019B/zh active Active
- 2009-03-13 WO PCT/US2009/001603 patent/WO2009117070A2/en active Application Filing
- 2009-03-13 EP EP09722067.7A patent/EP2268761B1/en active Active
- 2009-03-13 SG SG2013020573A patent/SG189689A1/en unknown
-
2010
- 2010-08-15 IL IL207610A patent/IL207610A/en active IP Right Grant
-
2013
- 2013-03-18 US US13/846,126 patent/US8623767B2/en active Active
- 2013-06-12 JP JP2013123913A patent/JP2013179360A/ja active Pending
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050595A (ja) * | 2000-08-04 | 2002-02-15 | Hitachi Ltd | 研磨方法、配線形成方法及び半導体装置の製造方法 |
JP2004532509A (ja) * | 2001-01-22 | 2004-10-21 | キャボット マイクロエレクトロニクス コーポレイション | 固体触媒を含むcmp研磨パッド |
JP2006502579A (ja) * | 2002-10-11 | 2006-01-19 | キャボット マイクロエレクトロニクス コーポレイション | 両親媒性非イオン性界面活性剤を利用したcmp法 |
US20060096179A1 (en) * | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
US20070090094A1 (en) * | 2005-10-26 | 2007-04-26 | Cabot Microelectronics Corporation | CMP of copper/ruthenium substrates |
JP2009514219A (ja) * | 2005-10-26 | 2009-04-02 | キャボット マイクロエレクトロニクス コーポレイション | 銅/ルテニウム基材のcmp |
WO2007111855A2 (en) * | 2006-03-23 | 2007-10-04 | Cabot Microelectronics Corporation | Halide anions for metal removal rate control |
JP2009530853A (ja) * | 2006-03-23 | 2009-08-27 | キャボット マイクロエレクトロニクス コーポレイション | 金属の除去速度を制御するためのハロゲン化物アニオン |
WO2008027421A1 (en) * | 2006-08-30 | 2008-03-06 | Cabot Microelectronics Corporation | Compositions and methods for cmp of semiconductor materials |
JP2010503211A (ja) * | 2006-08-30 | 2010-01-28 | キャボット マイクロエレクトロニクス コーポレイション | 半導体材料のcmpのための組成物と研磨方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015021132A (ja) * | 2013-07-17 | 2015-02-02 | サムスン エレクトロニクス カンパニー リミテッド | 有機膜研磨に用いられるcmp用スラリー組成物、これを利用し、cmp処理を行う方法及びこれを利用する半導体装置の製造方法 |
JP2017527446A (ja) * | 2014-06-20 | 2017-09-21 | キャボット マイクロエレクトロニクス コーポレイション | アルミニウムの研磨のためのcmpスラリー組成物及び方法 |
JP2020534680A (ja) * | 2017-09-15 | 2020-11-26 | キャボット マイクロエレクトロニクス コーポレイション | TiN−SiN CMP用途の高選択性のための窒化物抑制剤 |
JP7334148B2 (ja) | 2017-09-15 | 2023-08-28 | シーエムシー マテリアルズ リミティド ライアビリティ カンパニー | TiN-SiN CMP用途の高選択性のための窒化物抑制剤 |
Also Published As
Publication number | Publication date |
---|---|
US8623767B2 (en) | 2014-01-07 |
EP2268761A4 (en) | 2011-12-07 |
JP5643183B2 (ja) | 2014-12-17 |
SG189689A1 (en) | 2013-05-31 |
JP2013179360A (ja) | 2013-09-09 |
CN101978019A (zh) | 2011-02-16 |
TW200946622A (en) | 2009-11-16 |
IL207610A0 (en) | 2010-12-30 |
WO2009117070A2 (en) | 2009-09-24 |
EP2268761A2 (en) | 2011-01-05 |
TWI406918B (zh) | 2013-09-01 |
US20090236559A1 (en) | 2009-09-24 |
US8425797B2 (en) | 2013-04-23 |
KR101440667B1 (ko) | 2014-09-19 |
KR20110007143A (ko) | 2011-01-21 |
IL207610A (en) | 2015-01-29 |
US20130224955A1 (en) | 2013-08-29 |
EP2268761B1 (en) | 2016-12-21 |
WO2009117070A3 (en) | 2009-12-17 |
CN101978019B (zh) | 2014-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5643183B2 (ja) | ダマシン構造におけるアルミニウム/銅及びチタンを研磨するための組成物 | |
EP2092036B1 (en) | Compositions for polishing aluminum/copper and titanium in damascene structures | |
TWI374172B (en) | Selective slurry for chemical mechanical polishing | |
JP4774219B2 (ja) | ケミカルメカニカルプラナリゼーションのための多工程研磨溶液 | |
EP2118227B1 (en) | Polishing composition for tungsten-containing substrate | |
JP4188598B2 (ja) | 停止化合物を伴う研磨系及びその使用方法 | |
TWI374931B (en) | Compositions and methods for polishing silicon nitride materials | |
JP4790707B2 (ja) | タングステン含有基材の研磨方法 | |
TWI296283B (en) | Chemical-mechanical polishing composition and method for using the same | |
EP2758989B1 (en) | Composition and method for polishing aluminum semiconductor substrates | |
JP3837277B2 (ja) | 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法 | |
TW200910445A (en) | Method for chemical mechanical planarization of chalcogenide materials | |
KR20160051649A (ko) | 부식을 감소시키기 위한 화학적 기계적 폴리싱 슬러리 및 이의 사용 방법 | |
TW200907037A (en) | Polymeric barrier removal polishing slurry | |
TW201006916A (en) | Chemical mechanical polishing composition and methods relating thereto | |
JP4657408B2 (ja) | 金属膜用研磨剤 | |
JP2001031953A (ja) | 金属膜用研磨剤 | |
JP4231950B2 (ja) | 金属膜用研磨剤 | |
TW200846454A (en) | Polishing composition | |
JP2000290637A (ja) | 金属膜用研磨剤および研磨方法 | |
JP2004523123A (ja) | Cmp研磨のための方法及び組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120807 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121107 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130612 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130619 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20130830 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131210 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140903 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141030 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5643183 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |