CN101479359B - 在化学机械抛光应用中的可调选择性的浆料 - Google Patents

在化学机械抛光应用中的可调选择性的浆料 Download PDF

Info

Publication number
CN101479359B
CN101479359B CN2007800241788A CN200780024178A CN101479359B CN 101479359 B CN101479359 B CN 101479359B CN 2007800241788 A CN2007800241788 A CN 2007800241788A CN 200780024178 A CN200780024178 A CN 200780024178A CN 101479359 B CN101479359 B CN 101479359B
Authority
CN
China
Prior art keywords
chemical
polishing composition
layer
mechanical polishing
selectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800241788A
Other languages
English (en)
Chinese (zh)
Other versions
CN101479359A (zh
Inventor
陈湛
罗伯特·瓦卡西
本杰明·拜尔
迪尼什·卡纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN101479359A publication Critical patent/CN101479359A/zh
Application granted granted Critical
Publication of CN101479359B publication Critical patent/CN101479359B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2007800241788A 2006-06-29 2007-06-13 在化学机械抛光应用中的可调选择性的浆料 Expired - Fee Related CN101479359B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/478,023 US7294576B1 (en) 2006-06-29 2006-06-29 Tunable selectivity slurries in CMP applications
US11/478,023 2006-06-29
PCT/US2007/013889 WO2008005160A1 (en) 2006-06-29 2007-06-13 Tunable selectivity slurries in cmp applications

Publications (2)

Publication Number Publication Date
CN101479359A CN101479359A (zh) 2009-07-08
CN101479359B true CN101479359B (zh) 2012-12-26

Family

ID=38664578

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800241788A Expired - Fee Related CN101479359B (zh) 2006-06-29 2007-06-13 在化学机械抛光应用中的可调选择性的浆料

Country Status (10)

Country Link
US (1) US7294576B1 (enExample)
EP (1) EP2038361A4 (enExample)
JP (2) JP5642962B2 (enExample)
KR (1) KR101252895B1 (enExample)
CN (1) CN101479359B (enExample)
IL (1) IL195697A (enExample)
MY (1) MY144326A (enExample)
SG (1) SG173331A1 (enExample)
TW (1) TWI354697B (enExample)
WO (1) WO2008005160A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080096385A1 (en) * 2006-09-27 2008-04-24 Hynix Semiconductor Inc. Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same
JP5361306B2 (ja) * 2008-09-19 2013-12-04 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US8480920B2 (en) * 2009-04-02 2013-07-09 Jsr Corporation Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
CN102650059B (zh) * 2009-06-26 2015-04-15 中国石油化工股份有限公司 一种丁基橡胶氯甲烷甘醇脱水再生系统的复合缓蚀剂
CN104011155B (zh) * 2012-03-30 2017-03-15 霓达哈斯股份有限公司 抛光组合物
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US9303189B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
KR102193325B1 (ko) * 2014-04-18 2020-12-22 가부시키가이샤 에바라 세이사꾸쇼 기판 처리 장치, 기판 처리 시스템 및 기판 처리 방법
CN104513627B (zh) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 一种集成电路铜cmp组合物及其制备方法
KR101741707B1 (ko) * 2015-02-27 2017-05-30 유비머트리얼즈주식회사 연마 슬러리 및 이를 이용한 기판 연마 방법
KR101834418B1 (ko) * 2015-10-02 2018-03-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
US9484212B1 (en) 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
KR102543680B1 (ko) * 2015-12-17 2023-06-16 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
US11339308B2 (en) * 2016-03-01 2022-05-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
US10727076B2 (en) * 2018-10-25 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Slurry and manufacturing semiconductor using the slurry
WO2020245904A1 (ja) 2019-06-04 2020-12-10 昭和電工マテリアルズ株式会社 研磨液、分散体、研磨液の製造方法及び研磨方法
CN113004802B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN113122141B (zh) * 2019-12-30 2024-08-02 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN111218687B (zh) * 2020-03-30 2022-01-21 惠州宇盛机械设备有限公司 一种用于精密铜合金工件的化学抛光液
KR102455159B1 (ko) * 2020-07-17 2022-10-18 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
WO2022024726A1 (ja) * 2020-07-27 2022-02-03 山口精研工業株式会社 研磨剤組成物、及び研磨剤組成物を用いる研磨方法
KR102531445B1 (ko) * 2020-10-28 2023-05-12 주식회사 케이씨텍 연마 슬러리 조성물

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0896042A1 (en) * 1997-07-28 1999-02-10 Cabot Corporation A polishing composition including an inhibitor of tungsten etching
US20030025200A1 (en) * 2001-06-29 2003-02-06 Nobuhito Katsumura Process of manufacturing semiconductor device and slurry used therefor
CN1660951A (zh) * 2004-02-27 2005-08-31 福吉米株式会社 抛光组合物和抛光方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US5916855A (en) * 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US5910022A (en) * 1997-05-22 1999-06-08 Vlsi Technology, Inc. Method and system for tungsten chemical mechanical polishing for unplanarized dielectric surfaces
AU2001251318A1 (en) * 2000-04-07 2001-10-23 Cabot Microelectronics Corporation Integrated chemical-mechanical polishing
TW462908B (en) * 2000-09-25 2001-11-11 United Microelectronics Corp Chemical mechanical polishing
DE10109483A1 (de) 2001-02-28 2002-09-05 Clariant Gmbh Oxalkylierungsprodukte hergestellt aus Epoxiden und Aminen und deren Verwendung in Pigmentpräparationen
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US20030162399A1 (en) * 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
KR20060024775A (ko) 2003-05-12 2006-03-17 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 제2단계 구리 라이너 및 관련된 물질을 위한 ｃｍｐ조성물및 그 이용방법
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
JP2006049479A (ja) * 2004-08-03 2006-02-16 Nitta Haas Inc 化学的機械研磨方法
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0896042A1 (en) * 1997-07-28 1999-02-10 Cabot Corporation A polishing composition including an inhibitor of tungsten etching
US20030025200A1 (en) * 2001-06-29 2003-02-06 Nobuhito Katsumura Process of manufacturing semiconductor device and slurry used therefor
CN1660951A (zh) * 2004-02-27 2005-08-31 福吉米株式会社 抛光组合物和抛光方法

Also Published As

Publication number Publication date
MY144326A (en) 2011-08-29
CN101479359A (zh) 2009-07-08
JP5642962B2 (ja) 2014-12-17
KR20090023640A (ko) 2009-03-05
KR101252895B1 (ko) 2013-04-09
EP2038361A4 (en) 2011-04-20
JP2014205851A (ja) 2014-10-30
IL195697A (en) 2012-12-31
WO2008005160A1 (en) 2008-01-10
JP2009543336A (ja) 2009-12-03
SG173331A1 (en) 2011-08-29
TWI354697B (en) 2011-12-21
TW200811277A (en) 2008-03-01
JP5986146B2 (ja) 2016-09-06
EP2038361A1 (en) 2009-03-25
IL195697A0 (en) 2009-09-01
US7294576B1 (en) 2007-11-13

Similar Documents

Publication Publication Date Title
CN101479359B (zh) 在化学机械抛光应用中的可调选择性的浆料
CN101506325B (zh) 用于半导体材料的化学机械抛光的组合物及方法
CN1849378B (zh) 化学-机械抛光组合物及其使用方法
US8008202B2 (en) Ruthenium CMP compositions and methods
CN111183195B (zh) 用于钨磨光应用的经表面处理的研磨剂颗粒
CN101553550A (zh) 用于抛光镶嵌结构中的铝/铜及钛的组合物
CN101389723B (zh) 含碘酸盐的化学机械抛光组合物及方法
WO2004076575A2 (en) Modular barrier removal polishing slurry
WO2008005164A1 (en) Silicon oxide polishing method utilizing colloidal silica
WO2009085164A2 (en) Halide anions for metal removal rate control
CN101389724B (zh) 用于金属移除速率控制的卤化物阴离子
TW201724236A (zh) 研磨方法及雜質去除用組成物以及基板及其製造方法
CN101675138B (zh) 含有可溶性金属过氧酸盐络合物的化学机械抛光组合物及其使用方法
JP2016003275A (ja) タングステン系材料用研磨剤、研磨剤用貯蔵液、及び研磨方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, USA

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, USA

Patentee before: CABOT MICROELECTRONICS Corp.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121226