TWI577765B - 一種用於矽通孔平坦化的化學機械拋光液 - Google Patents
一種用於矽通孔平坦化的化學機械拋光液 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims description 89
- 239000000126 substance Substances 0.000 title claims description 26
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000002002 slurry Substances 0.000 title 1
- 239000007788 liquid Substances 0.000 claims description 58
- -1 azole compound Chemical class 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 15
- 239000003945 anionic surfactant Substances 0.000 claims description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 9
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- 229910019142 PO4 Inorganic materials 0.000 claims description 6
- 239000010452 phosphate Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- PSZYNBSKGUBXEH-UHFFFAOYSA-M naphthalene-1-sulfonate Chemical group C1=CC=C2C(S(=O)(=O)[O-])=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-M 0.000 claims description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims description 4
- 230000000844 anti-bacterial effect Effects 0.000 claims description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N glycerol group Chemical group OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003112 inhibitor Substances 0.000 claims description 4
- 150000007522 mineralic acids Chemical class 0.000 claims description 4
- 150000007524 organic acids Chemical class 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 150000002978 peroxides Chemical group 0.000 claims description 4
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 2
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 claims description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 2
- WWBXZKQQXUFSED-UHFFFAOYSA-N [Na].O=C.C1=CC=C2C(S(=O)(=O)OC)=CC=CC2=C1 Chemical compound [Na].O=C.C1=CC=C2C(S(=O)(=O)OC)=CC=CC2=C1 WWBXZKQQXUFSED-UHFFFAOYSA-N 0.000 claims description 2
- 239000013543 active substance Substances 0.000 claims description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 2
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 235000011187 glycerol Nutrition 0.000 claims description 2
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 claims description 2
- LCRMGUFGEDUSOG-UHFFFAOYSA-N naphthalen-1-ylsulfonyloxymethyl naphthalene-1-sulfonate;sodium Chemical group [Na].C1=CC=C2C(S(=O)(OCOS(=O)(=O)C=3C4=CC=CC=C4C=CC=3)=O)=CC=CC2=C1 LCRMGUFGEDUSOG-UHFFFAOYSA-N 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical group 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 2
- 239000001384 succinic acid Substances 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims 1
- 150000003851 azoles Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000012876 topography Methods 0.000 description 7
- 238000001878 scanning electron micrograph Methods 0.000 description 6
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical group 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- YXJUEYDETJCBKA-UHFFFAOYSA-N bis(2-hydroxyethyl)azanium;dihydrogen phosphate Chemical compound OP(O)(O)=O.OCCNCCO YXJUEYDETJCBKA-UHFFFAOYSA-N 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本發明涉及一種化學機械拋光液,更具體地說,本發明涉及一種用於矽通孔平坦化的化學機械拋光液。
隨著CMOS工藝開發的發展,器件的特徵尺寸逐漸縮小,電路密度的變的更加複雜,由此帶來的設計和製造變得愈加困難,互連過程中的信號擁堵進一步加劇,小型化和超高集成(integration)越加逼近其物理極限,為了延續摩爾定律,解決銅互連的延遲問題,滿足性能,頻寬和功耗的要求,3D IC集成技術逐漸發展起來。
即在垂直方向將晶片疊層,穿過有源電路直接實現高效互連,由於大大縮短了互聯線的長度,不僅提高了電路性能,還進一步降低了功耗。如下圖所示矽通孔(TSV)技術主要分為幾個步驟1:快速刻蝕形成通孔。2:通孔填注的過程包括氧化層的澱積、金屬粘附層/阻擋層/種子層、ECP金屬銅。採用CMP技術去除金屬銅。實現平坦化,形現金屬導通。
TSV制程的集成方式非常多,但都面臨一個共同的難題,即TSV製作都需要打通不同材料層,包括矽材料、IC中各種絕緣或導電的薄膜層。例如金屬銅,阻擋層金屬鉭,二氧化矽絕緣層以及氮化矽停止層等,各種膜層的厚度也比較高,為了提高三維集成技術的經濟性,就需要在CMP過程中具有較高的去除速率和合適的拋光選擇比,才能實現對前程缺陷的最大矯正,並停止在氮化矽層,同時不能產生金屬的腐蝕和缺陷,表面顆粒物控制在工藝要求的範圍。這對矽通孔阻擋層的CMP提出了更高的要求。目前針對TSV技術的專用CMP拋光液研究非常活躍,但至今還沒有商業化的產品報導,尤其是TSV阻擋層的拋光液。
本發明為解決上述現有技術存在的問題,提供了一種化學機械拋光液,滿足了矽通孔平坦化過程中二氧化矽對氮化矽的去除速率選擇比較高的工藝要求,並對前程的缺陷值具有較好的矯正作用,且防止了金屬拋光過程中產生的腐蝕,拋光後晶圓表面缺陷和污染物皆少。
本發明的用於矽通孔平坦化的化學機械拋光液,包含:研磨顆粒、酸、陰離子表面活性劑、氧化劑和唑類化合物及其衍生物。
在本發明中,所述的研磨顆粒為二氧化矽溶膠,所述的研磨顆粒的粒徑為20-200nm,優選地,所述的研磨顆粒的粒徑為40-120nm。
在本發明中,所述的研磨顆粒的濃度為10-50wt%。
在本發明中,所述的唑類化合物及其衍生物為三唑類化合物及其衍生物。優選地,所述三唑類化合物及其衍生物選自苯並三氮唑,甲基苯並三氮唑,羥基苯並三氮唑和羧基苯並三氮唑中的一種或多種。
在本發明中,所述的唑類化合物濃度為0.01-0.5wt%,優選地,所述的唑類化合物濃度為0.05-0.2wt%。
在本發明中,所述的酸為無機酸或有機酸,優選地,所述的無機酸或有機酸選自鹽酸,硝酸,草酸,丙二酸,丁二酸和磺基水楊酸中的一種或多種。
在本發明中,所述的酸的濃度為0.01-1wt%,優選地,所述的酸的濃度為0.01-0.2wt%。
在本發明中,所述的陰離子表面活性劑為至少兩種陰離子表面活性劑,優選地,所述的陰離子表面活性劑為萘磺酸鹽類表面活性劑和磷酸酯鹽類表面活性劑的混和物。
在本發明中,所述的萘磺酸鹽類表面活性劑為亞甲基二萘磺酸鈉和/或甲基萘磺酸鈉甲醛縮合物;所述的磷酸酯鹽類表面活性劑為烷基磷酸酯二乙醇胺鹽,ROPO3H2(NH(CH2CH2OH)2)2,其中R為-CmH2m+1,8m12,和/或醇醚磷酸單酯,RO(CH2CH2O)bPO(OH)2,其中R為-CnH2n+1,12n14,1b9。
在本發明中,所述的混合陰離子表面活性劑的濃度為50-2000ppm。
在本發明中,所述的氧化劑為過氧化物或過硫化物,優
選地,所述的氧化劑為選自過氧化氫,過氧化鈉,過氧化鉀,過硫酸鈉,過硫酸銨,過氧化苯甲醯中的一種或多種。
在本發明中,所述的拋光液還包含添加劑和/或殺菌防黴變劑。優選地,所述添加劑為有機溶劑,所述殺菌防黴變劑為季銨鹽活性劑,更優選地,所述有機溶劑為甘油。
在本發明中,所述的拋光液的pH值為1~4,優選地,所述的拋光液的pH值為2~3。
本發明突出的技術效果在於:1.本發明的拋光液具有較高的二氧化矽去除速率和較低的氮化矽去除速率,獲得較高的二氧化矽對氮化矽的去除速率選擇比;2.本發明的拋光液具有較高的缺陷校正能力,同時不產生金屬腐蝕,提高產品良率;3.採用本發明的拋光液拋光後,晶圓具有完好的表面形貌和較低的表面污染物殘留。
圖1A為TSV矽通孔阻擋層拋光前的拋面示意圖;圖1B為TSV矽通孔阻擋層拋光銅後的拋面示意圖;圖1C為TSV矽通孔阻擋層拋光阻擋層後的拋面示意圖;圖2為對比拋光液拋光後Semtech 854圖形測試晶圓的表面形貌的SEM圖;圖3為實施例3的拋光液拋光後Semtech 854圖形測試晶圓的表面形貌的SEM圖;
圖4為對比拋光液浸漬10min後Semtech 854圖形測試晶圓的表面形貌的SEM圖;以及圖5為實施例3的拋光液浸漬10min後Semtech 854圖形測試晶圓的表面形貌的SEM圖。
下面通過具體實施例進一步闡述本發明的優點,但本發明的保護範圍不僅僅局限於下述實施例。
表1給出了對比拋光液和本發明的拋光液1~10的配方,按表中配方,將各成分簡單均勻混合,餘量為水,之後採用氫氧化鉀、氨水和硝酸調節至合適的pH值,即可製得各實施例拋光液。
效果實施例1
採用對比拋光液和本發明的拋光液1~10按照下述條件對銅、鉭、二氧化矽(TEOS)和氮化矽(Si3N4)進行拋光。拋光條件:拋光墊為IC pad,下壓力為3.0psi,轉速為拋光盤/拋光頭=70/90rpm,拋光液流速為100ml/min,拋光時間為1min。
結果如表2所示:本發明的拋光液和對比拋光液相比,具有較高的鉭和二氧化矽的去除速率,添加一定量的萘磺酸鹽類陰離子表面活性劑後,氮化矽的去除速率得到有效的抑制而不影響二氧化矽的去除,添加醇醚磷酸酯類陰離子表面活性劑後,氮化矽的去除速率得到進一步降低,二氧化矽對氮化矽的去除速率的選擇比得到了進一步的提高。且由拋光液3~5對銅的拋光結果可以看出,金屬銅的去除速率可根據氧化劑的濃度進行調整,並具有合適的敏感度。
效果實施例2
採用拋光液1和拋光液3按照下述條件對Semtech 854圖形
測試晶圓進行拋光。拋光條件:拋光墊為IC pad,下壓力為3.0psi,轉速為拋光盤/拋光頭=70/90rpm,拋光液流速為100ml/min,拋光時間為1min。
圖1和圖2分別採用拋光液1和拋光液3拋光後Semtech 854圖形測試晶圓的表面形貌的SEM圖。
圖3和圖4分別採用拋光液1和拋光液3浸漬10min後Semtech 854圖形測試晶圓的表面形貌的SEM圖。
由圖3和圖4可以看出,本發明中的拋光液添加了醇醚磷酸酯類陰離子表面活性劑後有效抑制了金屬腐蝕,圖形片經過拋光液浸漬後的表面仍然清晰銳利,未發現金屬腐蝕現象。唑類化合物結合醇醚磷酸酯類陰離子表面活性劑很好的保護了金屬銅。
效果實施例3
採用對比拋光液1和拋光液1~2按照下述條件對TSV圖形測試晶圓進行拋光。拋光條件:拋光墊為IC pad,下壓力為3.0psi,轉速為拋光盤/拋光頭=70/90rpm,拋光液流速為100ml/min,拋光時間為1min。
拋光結果如表3所示:本發明的拋光液和對比拋光液相比,能較好的修正前程在晶圓上產生的碟形凹陷,獲得了較好的晶圓形貌。
應當理解的是,本發明所述wt%均指的是質量百分比含量。
以上對本發明的具體實施例進行了詳細描述,但其只是作為範例,本發明並不限制於以上描述的具體實施例。對於本領域技術人員而言,任何對本發明進行的等同修改和替代也都在本發明的範疇之中。因此,在不脫離本發明的精神和範圍下所作的均等變換和修改,都應涵蓋在本發明的範圍內。
Claims (21)
- 一種用於矽通孔平坦化的化學機械拋光液,包含:研磨顆粒、酸、陰離子表面活性劑、氧化劑和唑類化合物及其衍生物,其中所述的陰離子表面活性劑為萘磺酸鹽類表面活性劑和磷酸酯鹽類表面活性劑的混和物。
- 根據請求項1所述的化學機械拋光液,其中所述的研磨顆粒為二氧化矽溶膠,所述的研磨顆粒的粒徑為20-200nm。
- 根據請求項2所述的化學機械拋光液,其中所述的研磨顆粒的粒徑為40-120nm。
- 根據請求項1所述的化學機械拋光液,其中所述的研磨顆粒的濃度為10-50wt%。
- 根據請求項1所述的化學機械拋光液,其中所述的唑類化合物及其衍生物為三唑類化合物及其衍生物。
- 根據請求項5所述的化學機械拋光液,其中所述三唑類化合物及其衍生物選自苯並三氮唑,甲基苯並三氮唑,羥基苯並三氮唑和羧基苯並三氮唑中的一種或多種。
- 根據請求項1所述的化學機械拋光液,其中所述的唑類化合物濃度為0.01-0.5wt%。
- 根據請求項7所述的化學機械拋光液,其中所述的唑類化合物濃度為0.05-0.2wt%。
- 根據請求項1所述的化學機械拋光液,其中所述的酸為無機酸或有機酸。
- 根據請求項1所述的化學機械拋光液,其中所述的無機酸或有機酸選自鹽酸,硝酸,草酸,丙二酸,丁二酸和磺基水楊 酸中的一種或多種。
- 根據請求項1所述的化學機械拋光液,其中所述的酸的濃度為0.01-1wt%。
- 根據請求項11所述的化學機械拋光液,其中所述的酸的濃度為0.01-0.2wt%。
- 根據請求項1所述的化學機械拋光液,其中所述的萘磺酸鹽類表面活性劑為亞甲基二萘磺酸鈉和/或甲基萘磺酸鈉甲醛縮合物;所述的磷酸酯鹽類表面活性劑為烷基磷酸酯二乙醇胺鹽,ROPO3H2(NH(CH2CH2OH)2)2,其中R為-CmH2m+1,8m12,和/或醇醚磷酸單酯,RO(CH2CH2O)bPO(OH)2,其中R為-CnH2n+1,12n14,1b9。
- 根據請求項1所述的化學機械拋光液,其中所述的混合陰離子表面活性劑的濃度為50-2000ppm。
- 根據請求項1所述的化學機械拋光液,其中所述的氧化劑為過氧化物或過硫化物。
- 根據請求項15所述的化學機械拋光液,其中所述的氧化劑為選自過氧化氫,過氧化鈉,過氧化鉀,過硫酸鈉,過硫酸銨,過氧化苯甲醯中的一種或多種。
- 根據請求項1所述的化學機械拋光液,其中所述的拋光液還包含添加劑和/或殺菌防黴變劑。
- 根據請求項17所述的化學機械拋光液,其中所述添加劑為有機溶劑,所述殺菌防黴變劑為季銨鹽活性劑。
- 根據請求項18所述的化學機械拋光液,其中所述有機溶劑為甘油。
- 根據請求項1所述的化學機械拋光液,其中所述的拋光液的pH值為1~4。
- 根據請求項20所述的化學機械拋光液,其中所述的拋光液的pH值為2~3。
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