TW201224090A - Chemical-mechanical polishing slurry - Google Patents
Chemical-mechanical polishing slurry Download PDFInfo
- Publication number
- TW201224090A TW201224090A TW100134049A TW100134049A TW201224090A TW 201224090 A TW201224090 A TW 201224090A TW 100134049 A TW100134049 A TW 100134049A TW 100134049 A TW100134049 A TW 100134049A TW 201224090 A TW201224090 A TW 201224090A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing liquid
- acid
- liquid according
- organic
- polishing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 72
- 239000002002 slurry Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 239000002184 metal Substances 0.000 claims abstract description 36
- 239000003960 organic solvent Substances 0.000 claims abstract description 16
- 239000002738 chelating agent Substances 0.000 claims abstract description 8
- 238000005260 corrosion Methods 0.000 claims abstract description 7
- 230000007797 corrosion Effects 0.000 claims abstract description 7
- 239000007800 oxidant agent Substances 0.000 claims abstract description 6
- 239000003112 inhibitor Substances 0.000 claims abstract description 5
- 239000002245 particle Substances 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 32
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 15
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 14
- 229920002125 Sokalan® Polymers 0.000 claims description 13
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- -1 azole compound Chemical class 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229920003169 water-soluble polymer Polymers 0.000 claims description 5
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011975 tartaric acid Substances 0.000 claims description 4
- 235000002906 tartaric acid Nutrition 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004584 polyacrylic acid Substances 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 2
- 125000003158 alcohol group Chemical group 0.000 claims description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 239000010452 phosphate Substances 0.000 claims description 2
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 claims 2
- 235000011187 glycerol Nutrition 0.000 claims 2
- 150000007524 organic acids Chemical group 0.000 claims 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims 2
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 claims 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- JKTORXLUQLQJCM-UHFFFAOYSA-N 4-phosphonobutylphosphonic acid Chemical compound OP(O)(=O)CCCCP(O)(O)=O JKTORXLUQLQJCM-UHFFFAOYSA-N 0.000 claims 1
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229940120146 EDTMP Drugs 0.000 claims 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 229920000289 Polyquaternium Polymers 0.000 claims 1
- 206010036790 Productive cough Diseases 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- 239000006061 abrasive grain Substances 0.000 claims 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 229920001577 copolymer Polymers 0.000 claims 1
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 239000007791 liquid phase Substances 0.000 claims 1
- 229940097156 peroxyl Drugs 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 1
- 229920001223 polyethylene glycol Polymers 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 210000003802 sputum Anatomy 0.000 claims 1
- 208000024794 sputum Diseases 0.000 claims 1
- 229910021653 sulphate ion Inorganic materials 0.000 claims 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 11
- 239000003989 dielectric material Substances 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000000844 anti-bacterial effect Effects 0.000 description 11
- 239000003899 bactericide agent Substances 0.000 description 10
- 229910000420 cerium oxide Inorganic materials 0.000 description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000855 fungicidal effect Effects 0.000 description 2
- 239000000417 fungicide Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- SQDFHQJTAWCFIB-UHFFFAOYSA-N n-methylidenehydroxylamine Chemical compound ON=C SQDFHQJTAWCFIB-UHFFFAOYSA-N 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- BAERPNBPLZWCES-UHFFFAOYSA-N (2-hydroxy-1-phosphonoethyl)phosphonic acid Chemical compound OCC(P(O)(O)=O)P(O)(O)=O BAERPNBPLZWCES-UHFFFAOYSA-N 0.000 description 1
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- HEOGKPWVVDRDDT-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl butane-1-sulfonate Chemical compound CCCCS(=O)(=O)OCCOCCO HEOGKPWVVDRDDT-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- FYELSNVLZVIGTI-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-5-ethylpyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1CC)CC(=O)N1CC2=C(CC1)NN=N2 FYELSNVLZVIGTI-UHFFFAOYSA-N 0.000 description 1
- AWFYPPSBLUWMFQ-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(1,4,6,7-tetrahydropyrazolo[4,3-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=C2 AWFYPPSBLUWMFQ-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- GCZJIJVKIAGFFJ-UHFFFAOYSA-N C(C)NN.C(CO)O Chemical compound C(C)NN.C(CO)O GCZJIJVKIAGFFJ-UHFFFAOYSA-N 0.000 description 1
- SOKMETDFTNIGDL-UHFFFAOYSA-N C(CCC)NN.C(CO)O Chemical compound C(CCC)NN.C(CO)O SOKMETDFTNIGDL-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000003903 lactic acid esters Chemical class 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002763 monocarboxylic acids Chemical group 0.000 description 1
- 239000003471 mutagenic agent Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000004291 sulphur dioxide Substances 0.000 description 1
- 235000010269 sulphur dioxide Nutrition 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
201224090 六、發明說明: 【發明所屬之技術領域】 本發明涉及一種化學機械拋光液。 【先前技術】 銅互連的平坦化通常採用三步法,即銅的粗拋,軟著陸和阻擋 層的拋光。而阻擋層的拋光是非常關鍵的步驟,因為它的目的是去 除组阻擋層,清理表面所有金屬殘留和有機物殘留等,並停止在工 藝要求的厚度,形成銅互聯線,這一步決定著最終的表面形貌、可 罪性和電學特性。隨著45nm技術的發展以及新材料尤其是低介電 材料的應用,對包括表面污染物顆粒,蝶形凹陷,厚度分佈,拋光 均一'丨生、表面潔淨度以及低介電材料的去除速率等等關鍵參數都有 了更咼的要求。特別是表面污染物控制、電性能和可靠性方面,其 精度和範圍越來小,越來越苛刻,電阻值在不同線寬的分佈,電遷 移特性’擊穿電壓(VBD)分佈以及時間相關介質擊穿(TDDB) 等等都更加_於輯層的拋光。再者’低介電材料的機械強度也 要求CMP工藝更加溫和雜護介質層峨械完整性,拋光耗材的 成本控制也要求拋光液的低成本和拋光塾的長壽命,這些都對阻擂 層的拋光提iH 了更大的賊,可贱沒有縣和高品f的阻擋層拋 光,技術節點的進—步推進將*可能實現。在阻騎的拋光過程甲 會出現金屬雜和介質材料赖,金屬物賊留,有機物質殘留, 201224090 拋光均一性等問題,因為各個晶片廠的製造工藝有不同的側重點, 所以對阻擋層的平坦化也有不同的要求,現今的拋光液市場,還沒 有一支拋光液能夠解決所有的問題,尤其是對4511111及以下製(制) 程中’阻騎的厚度更薄’封裝(封蓋)_以及齡紐料的物性 特點,都使得拋光㈣配謂拋光性能的變化更加敏感,尤其是對 表面缺陷的修正能力,拋光均—性和穩定性等方面都有近乎苛刻的 要求。本專利提供一種阻擋層拋光液,具有較高的二氧化石夕去除 速率和可_低介電材料去除速率,表面污雜較低,拋光塾無金 屬物質殘留拋綠,並具有較強的表面缺陷修概力。且成本低廉 使用方便。 【發明内容】 本發明要解決的技術問題是:解決銅的去除隨雙氧水變化敏 感、拋光過程中抛光塾上金屬物質殘留、提高低介電材料 的問題。解決_晶圓上表面缺陷的校正能力的問題。〃 本發明提供了—種化學賊拋綠,包含町組分: 一種磨料、—種金屬顧抑制劑組合、-種螯合劑、-種氧化 劑、一種有機溶劑。 最優料是二氧化石夕溶膠,氣相法二氧化石夕。粒徑為20_200nm, 2Gnm。磨料含量為丨—逐,較好的為纖 ,腐财卩糊組合包括—種蝴化合物, 物,一種场侧膦蝴她。其巾,规合物^三201224090 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a chemical mechanical polishing liquid. [Prior Art] The planarization of copper interconnects is usually carried out in a three-step process, namely, copper throwing, soft landing, and polishing of the barrier layer. The polishing of the barrier layer is a very critical step because its purpose is to remove the group barrier layer, clean all metal residues and organic residues on the surface, and stop at the thickness required by the process to form a copper interconnect. This step determines the final Surface topography, sinfulness and electrical properties. With the development of 45nm technology and the application of new materials, especially low dielectric materials, including surface contaminant particles, butterfly depression, thickness distribution, polishing uniformity, surface cleanliness and removal rate of low dielectric materials, etc. Other key parameters have more stringent requirements. Especially in terms of surface contaminant control, electrical properties and reliability, its accuracy and range are getting smaller and more demanding, the resistance value is distributed in different line widths, electromigration characteristics 'breakdown voltage (VBD) distribution and time correlation Dielectric breakdown (TDDB) and so on are all more polished. Furthermore, the mechanical strength of the low dielectric material also requires the CMP process to be more gentle and to maintain the mechanical integrity of the dielectric layer. The cost control of the polishing consumable also requires the low cost of the polishing solution and the long life of the polishing crucible. The polishing of the iH has a larger thief, but there is no barrier polishing of the county and high-quality f, and the advancement of the technology node will be possible. In the polishing process of the riding resistance, there will be metal impurities and dielectric materials, metal thieves, organic matter residues, 201224090 polishing uniformity, etc., because the manufacturing process of each wafer factory has different emphasis, so the barrier layer There are also different requirements for flattening. In today's polishing liquid market, there is not a single polishing solution that can solve all the problems, especially for the thinner thickness of the 'resistance ride' package (cover) for the 4511111 and below. _ and the physical properties of the ageing materials make the polishing (four) with a more sensitive change in polishing performance, especially the ability to correct surface defects, polishing uniformity and stability have almost strict requirements. The patent provides a barrier layer polishing liquid, which has a high removal rate of the dioxide and a low dielectric material removal rate, a low surface contamination, a polished metal, no metal residue, and a strong surface. Defect repair. And the cost is low and easy to use. SUMMARY OF THE INVENTION The technical problem to be solved by the present invention is to solve the problem that copper removal is sensitive to changes in hydrogen peroxide, polishing of metal residues on the crucible during polishing, and improvement of low dielectric materials. Solve the problem of the ability to correct surface defects on the wafer. 〃 The present invention provides a chemical thief throwing green, comprising a component: an abrasive, a metal-inhibitor combination, a chelating agent, an oxidizing agent, and an organic solvent. The optimum material is a dioxide dioxide sol, a gas phase method of sulphur dioxide. The particle size is 20-200 nm, 2 Gnm. The abrasive content is 丨-, preferably, the fiber, and the rot-mix combination includes a butterfly compound, a field-side phosphine butterfly. Its towel, the rule ^ three
S 201224090 氮嗤(BTA)及其仿生物,水溶性聚合物為聚丙烯酸及其鹽或聚丙 烯酸共聚物,所述的大分子有機膦為多氨基多趟基亞曱基膦酸 (ΡΑΡΕΜΡ )或有機鱗酸脂例如多元醇填酸醋(pApE )。βτα的濃 度範圍為0.01-0.5% ’最好的是(u_〇.2%,水溶性聚合物的濃度為 0.01-1% ’最好的是在0.05-0.2% ’大分子有機膦或有機磷酸脂的含 量在 0.01%_1%,最好的為 0.05-0.5%。 螯合劑為一元羧酸或多元羧酸,或者有機膦^例如醋酸,草酸, 丙二酸,檸檬酸,酒石酸,丁二酸,己二酸等,有機鱗為,2_鱗酸 基丁烧-1,2,4-三羧酸(PBTCA),2_羥基膦醯基乙酸(HPAA), 羥基亞乙基二膦酸(hedp)’乙二胺四曱叉膦酸五鈉(EDTMp), 氨基三曱叉繼(ATMP),等,螯合_添加量為__1%,最佳 的為 0.1-0.5%。 其中’有機溶劑為醇類或峨有機溶劑,較好的為乙醇、丙醇、 乙二醇、丙二醇、丙三醇、二乙二醇;乙二醇曱醚、乙二醇乙醚、 乙二醇丁趟、丙二醇曱醚,丙二醇⑽、丙二醇_、丙二醇丁醚、 乙一醇單甲喊、_乙二醇單乙趟、二乙二醇丁喊、二丙二醇甲峻、 二丙二醇⑽、二丙二醇丙醚等。有機溶劑的添加量為叫〇%, 最好的是1-5%。 上述含量均為質量百分比含量。 其中,氧化料過氧化物或過硫化物,過氧化氫,過氧化納, 過氧化鉀’過氧化笨甲醯’過硫酸納,過硫酸鉀,過硫酸銨等 、本發明的化學機械拋絲進—步包括:殺菌峨變劑,如聚季 錄鹽等。 201224090 本發明的化學機械拋光液pH值為2-5,較佳的為3_4。 本發明中:磨料的作用是去除反應掉的表面金屬材料和非金屬 材料。螯合劑的作用是徹底清楚拋光後表面的金屬物質殘留。複合 防腐劑的作収賴金屬不被雜,另外對氧化綱合翻敏感程 度’保護凹陷處的金屬不被快速絲’飾對前㈣表面缺陷進行 修補。有機溶劑的作用是改變拋光液在晶片和拋光塾上的吸附性 能,溶解去除有機物_和金屬㈣殘留,延長拋光墊壽命,提高 拋光穩定性。並能-定程度的提高二氧切和lGw_k材料的去除^ 率,並抑制銅的絲’改善拋綠在晶片她光墊上面的擴散行 為,改善管晶(芯)内不同線寬結構的拋光均一性。 本發明的有益效果是:採用金屬顧抑制敝合,有效保護金 屬在拋光雜中免受雜,魏校轉簡,翻平坦化 的效果,期有機溶劑來改魏料與拋缝和晶片之 為,來降低拋光墊上金屬殘留物的水準’進—步提高拋光塾壽命, 提高產能’此外械溶劑也能—定程度的雕對不嶋層的抛光選 擇比’更餅制玉藝要求的厚度分佈和表面性貌。 【實施方式】 步闡述本發明的優勢 下面通過具體實施方式來進_ 拋光條件: 抛光塾:Fujibopad 抛光條件:70/90rpm 201224090 拋光液流量:1 〇〇ml/min 靜態腐触速率:將新鮮拋光的銅片放入聚液中浸潰15min,測 量前後的膜層厚度。 蝶形凹陷:採用TEOS封蓋的BD854圖形晶圓,測量80um 金屬塊的蝶形凹陷。 切片内的拋光均一性:為一個管晶(芯)内不同線寬的蝶形凹陷。 表1、實施例1〜11 實施例 金屬腐蝕抑制劑組合 蝥合劑 有機 溶劑 氧化 劑 其它添 加劑 pH值 參比拋光 液 Anji阻棺層抛 光液(商業化) 0.3% 殺菌劑 3.00 實施例1 10% 二氧化矽 lOOnm 0.2% BTA 0.2% 丙 二酸 0.3% 殺菌劑 3.00 實施例2 10% 二氧化矽 lOOnm 0.2% BTA 0.0 (5% PAA 0.2% 丙 二酸 0.3% 殺菌劑 3.00 實施例3 10% 二氧化矽 lOOnm 0.2% BTA 0.05% PAA 0.1% PAPEMP 0.2% 丙 二酸 0.3% 殺菌劑 3.00 實施例4 10% 二氧化矽 lOOnm 0.2% BTA 0.05% PAA 0.1% PAPEMP 0.2% 丙 二酸 2%二乙二 醇單乙醚 0.3% 殺菌劑 3.00 實施例5 10% 二氧化矽 lOOnm 0.2% BTA 0.05% PAA 0.1% PAPEMP 0.2% 丙 二酸 5%乙二醇 丁醚 0.3% 殺菌劑 3.00 實施例6 10% 二氧化矽 lOOnm 0.2% BTA 0.1% PAA 共聚物 0.1% PAPE 0.2%丁 二酸 2%乙二醇 甲醚 0.3% 殺菌劑 3.00 實施例7 10% 二氧化矽 lOOnm 0-2% BTA 0.1% PAA 共聚物 0-1% PAPE 0.2%檸 檬酸 2%丙二醇 甲醚 0.3% 殺菌劑 3.00 實施例8 10% 二氧化矽 lOOnm 0.2% BTA 0.1% PAA 共聚物 0.1% PAPEMP 0.2% PBTCA 2% 二乙二 醇甲醚 0.3% 殺菌劑 3.00 201224090 實施例9 5% 二氧化矽 lOOnm 0.2% BTA 0.1% PAA 共聚物 0.1% PAPEMP 0.2% PBTCA 5%乙二醇 0.3% 殺菌劑 3.00 實施例10 30% 二氧化矽 20nm 0.5% BTA 0.01% PAA 0.01% PAPEMP 0.1%酒 石酸 1%丙二醇 乙醚 0.3% 殺菌劑 5.00 實施例11 1% 二氧化矽 200nm 0.01% BTA 0.1% PAA m PAPEMP 0.5% 酒 石酸 10%乙二醇 丁醚 0.3% 殺菌劑 2.00 註:參比拋光液為市售的阻擋層拋光液 表2、實施例1〜11的實施效果資料 TEOS BD1 Cu Ta Corrosion SER pre pos WIDNU 拋光墊 金屬殘留物 對比拋光液 655 343 490 419 No 1.5 455 462 500A 深綠色 殘留物 實施例1 723 352 202 406 No 1 320 -260 淺綠色 殘留物 實例2 715 328 495 415 No 1.2 752 748 淺綠色 殘留物 實例3 732 364 272 426 No 2 462 210 淺綠色 殘留物 實例4 971 620 235 495 No 1 366 60 180A 無金屬 殘留物 實例5 895 608 246 502 No 1.2 478 135 200A 無金屬 殘留物 實例6 867 635 276 496 no 1.1 520 212 無明顯-金屬殘留物 實例7 906 598 236 486 No 1.5 440 i35 無明顯金屬 殘留物 實例8 882 584 247 468 No 1.2 653 327 無明顯金屬 殘留物 實例9 635 423 326 386 No 1 320 50 無明顯金屬 殘留物 實例10 1658 1024 284 825 No 1.2 695 •240 無明顯金屬 殘留物 實例11 362 255 223 375 No 1.1 425 286 無明顯金屬 殘留物 SER :靜態腐蝕速率;Corrosion :金屬腐蝕;TEOS :二氧化矽;BD1 :低介電材料(黑 鑽1) ; Ta:阻擋層金屬钽;Pre.阻擋層拋光前的蝶形凹陷;pos。:阻擋層拋光後的蝶形 凹陷;WIDNU : —個管晶(芯)内的拋光均一性。 201224090 從上述實施例中我們可以看出,與對比抛光液,本專利特有的 拋光液具有更多的優點。 從圖1可赠出’細金制麟糊組合錢將金屬鋼的 去除速率隨雙氧水變化的敏感程度調整到卫藝要求的範圍,即不能 太敏感以至於讀難喻制,又錢過於雜,造成厚度分佈不可 調0 從圖2-4可以看出’有機溶劑的加人,改變了拋光液在晶片和 拋光墊上的吸_散性能。從岐變了各種膜層材料縣除逮率。 進而改變官晶⑻内的拋光均—性。加人有機麵,能夠一定程度 上提高介質材料包括二氧姆(PETE〇s)和低介電材料⑽^ 的,除速率’降低金屬銅的去除,這樣可以更好的改善表面缺陷, 使得表面形貌能夠滿足工藝要求。 採用本專利特有的金屬雜抑制敝合,可以得 金屬對氧化綱敏感度,使得金屬的厚度控做容易通過二$ 和乳化劑濃度線上縱。也可以更好的修正軟著陸階段金屬表 蝶形凹陷。有齡_加人配合該金屬賴抑軸組合大大改 切片級的均-性’使制—管晶⑻内不同線寬的表面凹陷的· 幅度降低到200埃以下,性能得到了很大的改善。 【圖式簡單說明】 圖1為不同金屬腐钱抑制劑組合下銅去除速率隨雙氧水、 變化情況; 7 /辰又的 201224090 圖2為二氧化矽的去除速率隨有機溶劑濃度的變化情況。 圖3為低介電材料的抛光速率隨有機溶劑添加量的變化情況。 圖4為金屬去除速率隨有機溶劑添加量的變化。 【主要元件符號說明】 (無)S 201224090 Nitrogen tellurium (BTA) and its imitation organism, the water-soluble polymer is polyacrylic acid and its salt or polyacrylic acid copolymer, and the macromolecular organophosphine is polyaminopolydecylphosphinic acid (ΡΑΡΕΜΡ) or Organic lactic acid esters such as polyols filled with vinegar (pApE). The concentration of βτα ranges from 0.01 to 0.5%. The best is (u_〇.2%, the concentration of water-soluble polymer is 0.01-1% 'best is 0.05-0.2% 'macromolecule organic phosphine or organic The content of the phosphate ester is 0.01%_1%, preferably 0.05-0.5%. The chelating agent is a monocarboxylic acid or a polycarboxylic acid, or an organic phosphine such as acetic acid, oxalic acid, malonic acid, citric acid, tartaric acid, dibutyl Acid, adipic acid, etc., organic scales, 2_ squarytin butyrate-1,2,4-tricarboxylic acid (PBTCA), 2-hydroxyphosphonium thioglycolic acid (HPAA), hydroxyethylidene diphosphonic acid (hedp) 'Ethylenediamine tetraindole phosphopentapentate (EDTMp), aminotriterpene (ATMP), etc., chelation_addition amount is __1%, optimally 0.1-0.5%. The organic solvent is an alcohol or hydrazine organic solvent, preferably ethanol, propanol, ethylene glycol, propylene glycol, glycerol, diethylene glycol; ethylene glycol oxime ether, ethylene glycol ether, ethylene glycol butyl hydrazine , propylene glycol oxime ether, propylene glycol (10), propylene glycol _, propylene glycol butyl ether, ethyl ketone monomethyl sulfonate, _ ethylene glycol monoethyl hydrazine, diethylene glycol butyl sulfonate, dipropylene glycol methyl thiophene, dipropylene glycol (10), dipropylene glycol Ether, etc. The amount of the organic solvent added is 〇%, preferably 1-5%. The above contents are all percentage by mass. Among them, oxidized peroxide or persulfide, hydrogen peroxide, sodium peroxide, The potassium oxyhydroxide 'peroxidized benzoic acid sulfonate 'sodium persulfate, potassium persulfate, ammonium persulfate, etc., the chemical mechanical ripper of the present invention includes: a bactericidal mutator, such as a polyquarium salt, etc. 201224090 The chemical mechanical polishing liquid has a pH of 2-5, preferably 3_4. In the present invention, the role of the abrasive is to remove the surface metal material and the non-metal material which are reacted. The function of the chelating agent is to thoroughly understand the metal of the polished surface. Residues of substances. The composite preservatives do not interfere with the metal, and the degree of sensitivity to oxidation is 'protected the metal in the depression is not repaired by the fast wire' to the front (four) surface defects. The role of the organic solvent is to change the polishing. The adsorption performance of the liquid on the wafer and the polishing crucible dissolves and removes organic matter and metal (4) residues, prolongs the life of the polishing pad, improves polishing stability, and can improve the degree of dioxo and lGw_k materials to a certain extent. In addition to the ^ rate, and suppressing the copper wire 'improves the diffusion behavior of the greening on the wafer above her optical pad, improving the polishing uniformity of different line width structures in the tube crystal (core). The beneficial effect of the invention is: using metal to suppress Cohesion, effectively protect the metal from polishing in the polishing, the effect of turning the flat and flattening, and the organic solvent to change the level of the metal residue on the polishing pad. Step-by-step to improve the life of the polishing crucible and increase the productivity. In addition, the mechanical solvent can also be used to determine the thickness distribution and surface appearance of the non-defective layer of the engraving layer. [Embodiment] Steps Advantages of the Invention The following is by way of specific embodiments. Polishing conditions: Polishing Fu: Fujibopad Polishing conditions: 70/90 rpm 201224090 Polishing fluid flow rate: 1 〇〇ml/min Static rotting rate: placing freshly polished copper sheets into a poly The film thickness was measured before and after the liquid was immersed for 15 min. Butterfly-shaped depression: The butterfly-shaped depression of the 80um metal block was measured using a TEOS-capped BD854 graphic wafer. Polishing uniformity within the slice: a butterfly-shaped depression of different line widths within a tube (core). Table 1, Examples 1 to 11 Examples Metal corrosion inhibitor combination chelating agent Organic solvent oxidizing agent Other additives pH reference polishing solution Anji barrier layer polishing solution (commercialized) 0.3% bactericide 3.00 Example 1 10% dioxide矽lOOnm 0.2% BTA 0.2% malonic acid 0.3% bactericide 3.00 Example 2 10% cerium oxide lOOnm 0.2% BTA 0.0 (5% PAA 0.2% malonic acid 0.3% bactericide 3.00 Example 3 10% cerium oxide LOOnm 0.2% BTA 0.05% PAA 0.1% PAPEMP 0.2% malonic acid 0.3% fungicide 3.00 Example 4 10% cerium oxide lOOnm 0.2% BTA 0.05% PAA 0.1% PAPEMP 0.2% malonic acid 2% diethylene glycol single Ether 0.3% bactericide 3.00 Example 5 10% cerium oxide lOOnm 0.2% BTA 0.05% PAA 0.1% PAPEMP 0.2% malonic acid 5% ethylene glycol butyl ether 0.3% bactericide 3.00 Example 6 10% cerium oxide lOOnm 0.2% BTA 0.1% PAA copolymer 0.1% PAPE 0.2% succinic acid 2% ethylene glycol methyl ether 0.3% bactericide 3.00 Example 7 10% cerium oxide lOOnm 0-2% BTA 0.1% PAA copolymer 0-1 % PAPE 0.2% citric acid 2% propylene glycol methyl ether 0.3% bactericide 3.00 Example 8 10% Ceria 100 nm 0.2% BTA 0.1% PAA Copolymer 0.1% PAPEMP 0.2% PBTCA 2% Diethylene glycol methyl ether 0.3% Fungicide 3.00 201224090 Example 9 5% Ceria 100 nm 0.2% BTA 0.1% PAA Copolymer 0.1 % PAPEMP 0.2% PBTCA 5% ethylene glycol 0.3% bactericide 3.00 Example 10 30% cerium oxide 20 nm 0.5% BTA 0.01% PAA 0.01% PAPEMP 0.1% tartaric acid 1% propylene glycol ether 0.3% bactericide 5.00 Example 11 1% Ceria 200 nm 0.01% BTA 0.1% PAA m PAPEMP 0.5% tartaric acid 10% ethylene glycol butyl ether 0.3% bactericide 2.00 Note: The reference polishing liquid is a commercially available barrier polishing liquid. Table 2, Examples 1 to 11 Effect data TEOS BD1 Cu Ta Corrosion SER pre pos WIDNU Polishing pad metal residue contrast polishing liquid 655 343 490 419 No 1.5 455 462 500A Dark green residue Example 1 723 352 202 406 No 1 320 -260 Light green residue example 2 715 328 495 415 No 1.2 752 748 Light green residue example 3 732 364 272 426 No 2 462 210 Light green residue example 4 971 620 235 495 No 1 366 60 180A Example of metal free residue 5 895 608 246 502 No 1.2 478 13 5 200A Metal-free residue example 6 867 635 276 496 no 1.1 520 212 No obvious - metal residue example 7 906 598 236 486 No 1.5 440 i35 No obvious metal residue Example 8 882 584 247 468 No 1.2 653 327 No visible metal Residue example 9 635 423 326 386 No 1 320 50 No significant metal residue Example 10 1658 1024 284 825 No 1.2 695 •240 No obvious metal residue Example 11 362 255 223 375 No 1.1 425 286 No significant metal residue SER: Static corrosion rate; Corrosion: metal corrosion; TEOS: cerium oxide; BD1: low dielectric material (black diamond 1); Ta: barrier metal ruthenium; Pre. : Butterfly-shaped depression after polishing of the barrier layer; WIDNU: - Polishing uniformity in a tube crystal (core). 201224090 From the above examples, we can see that the polishing liquid unique to this patent has more advantages than the comparative polishing liquid. From Figure 1, you can give the 'fine gold-based paste combination money to adjust the metal steel removal rate with the sensitivity of the hydrogen peroxide change to the range of the requirements of the art, that is, not too sensitive to read difficult, and too much money, resulting in thickness The distribution is not adjustable. From Figure 2-4, it can be seen that the addition of organic solvents changes the absorption and dispersion properties of the polishing solution on the wafer and the polishing pad. From the change of the various film materials, the county arrest rate. Further, the polishing uniformity in the official crystal (8) is changed. Adding organic surface can improve the dielectric materials to a certain extent, including dioxin (PETE〇s) and low dielectric materials (10)^, in addition to the rate of 'reduced metal copper removal, which can better improve surface defects, making the surface The shape can meet the process requirements. By using the unique metal hetero-inhibition coupling of this patent, the sensitivity of the metal to the oxidation group can be obtained, so that the thickness of the metal can be easily controlled by the two-dimensional and the concentration of the emulsifier on the line. It is also possible to better correct the metal-shaped butterfly depression in the soft landing stage. The age-plus plus the metal-reducing axis combination greatly changed the homogeneity of the slice level, so that the surface depression of different line widths in the system-tube crystal (8) was reduced to less than 200 angstroms, and the performance was greatly improved. . [Simple description of the diagram] Figure 1 shows the removal rate of copper with hydrogen peroxide in different combinations of metal decay inhibitors. 7 / Chen 201224900 Figure 2 shows the removal rate of cerium oxide with the concentration of organic solvent. Figure 3 shows the polishing rate of a low dielectric material as a function of the amount of organic solvent added. Figure 4 shows the change in metal removal rate with the amount of organic solvent added. [Main component symbol description] (none)
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CN103898512A (en) * | 2012-12-28 | 2014-07-02 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing solution and technique for copper interconnection |
TWI577765B (en) * | 2012-06-21 | 2017-04-11 | 安集微電子(上海)有限公司 | Chemical mechanical polishing slurry for silicon through-hole |
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US20130327977A1 (en) * | 2012-06-11 | 2013-12-12 | Cabot Microelectronics Corporation | Composition and method for polishing molybdenum |
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CN104513626B (en) * | 2014-12-22 | 2017-01-11 | 深圳市力合材料有限公司 | Silicon chemical-mechanical polishing solution |
WO2017191671A1 (en) * | 2016-05-02 | 2017-11-09 | ニッタ・ハース株式会社 | Polishing composition |
CN107236959A (en) * | 2017-05-22 | 2017-10-10 | 如皋市下原科技创业服务有限公司 | A kind of polishing fluid |
CN111378972A (en) * | 2018-12-29 | 2020-07-07 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution |
TW202138505A (en) * | 2020-03-31 | 2021-10-16 | 美商富士軟片電子材料美國股份有限公司 | Polishing compositions and methods of use thereof |
CN111423819A (en) * | 2020-04-17 | 2020-07-17 | 深圳市朗纳研磨材料有限公司 | Polishing solution and preparation method thereof |
CN112175525A (en) * | 2020-09-30 | 2021-01-05 | 常州时创新材料有限公司 | Polishing composition for IC copper barrier layer CMP and preparation method thereof |
CN112646550B (en) * | 2020-12-23 | 2022-03-18 | 江苏奥首材料科技有限公司 | Diamond grinding fluid for wafer substrate slice |
CN116004332B (en) * | 2022-01-24 | 2024-05-10 | 云南鑫耀半导体材料有限公司 | Method for cleaning adhesive on back of rough polished germanium wafer |
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CN1900206B (en) * | 2005-07-21 | 2011-01-05 | 安集微电子(上海)有限公司 | Chemical and mechanical polishing liquid and its use |
JP2007088379A (en) * | 2005-09-26 | 2007-04-05 | Fujifilm Corp | Aqueous polishing slurry and chemical mechanical polishing method |
CN101077961B (en) * | 2006-05-26 | 2011-11-09 | 安集微电子(上海)有限公司 | Polishing fluid for smoothing treatment of refined surface and use method thereof |
WO2008004579A1 (en) * | 2006-07-05 | 2008-01-10 | Hitachi Chemical Co., Ltd. | Polishing liquid for cmp and polishing method |
CN101130665A (en) * | 2006-08-25 | 2008-02-27 | 安集微电子(上海)有限公司 | Polishing solution used for polishing low-dielectric materials |
CN101451044B (en) * | 2007-11-30 | 2013-10-02 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing liquid |
CN101463227B (en) * | 2007-12-21 | 2013-06-12 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing solution for barrier layer |
EP2268777A4 (en) * | 2008-04-24 | 2011-11-23 | Ppt Res Inc | Stable aqueous slurry suspensions |
CN101747841A (en) * | 2008-12-05 | 2010-06-23 | 安集微电子(上海)有限公司 | Chemical-mechanical polishing solution |
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TWI577765B (en) * | 2012-06-21 | 2017-04-11 | 安集微電子(上海)有限公司 | Chemical mechanical polishing slurry for silicon through-hole |
CN103898512A (en) * | 2012-12-28 | 2014-07-02 | 安集微电子(上海)有限公司 | Chemico-mechanical polishing solution and technique for copper interconnection |
CN103898512B (en) * | 2012-12-28 | 2018-10-26 | 安集微电子(上海)有限公司 | A kind of chemical mechanical polishing liquid and technique for copper-connection |
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