CN101747841A - Chemical-mechanical polishing solution - Google Patents

Chemical-mechanical polishing solution Download PDF

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Publication number
CN101747841A
CN101747841A CN200810204101A CN200810204101A CN101747841A CN 101747841 A CN101747841 A CN 101747841A CN 200810204101 A CN200810204101 A CN 200810204101A CN 200810204101 A CN200810204101 A CN 200810204101A CN 101747841 A CN101747841 A CN 101747841A
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China
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mechanical polishing
chemical mechanical
acid
surfactant
benzotriazole
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CN200810204101A
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Chinese (zh)
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宋伟红
姚颖
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安集微电子(上海)有限公司
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Priority to CN200810204101A priority Critical patent/CN101747841A/en
Publication of CN101747841A publication Critical patent/CN101747841A/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents

Abstract

The invention discloses chemical-mechanical polishing solution, which has good effect on polishing dielectric materials and higher rate of removing dielectric materials and simultaneously contains dimer dumbbell shaped and/or poly chain shaped silica sol ground particles. The particles have regular shapes. The wafer after polishing has better surface finish and flatness and can meet the requirements for the surfaces of the dielectric materials under various technological conditions.

Description

一种化学机械抛光液 A chemical mechanical polishing liquid

技术领域 FIELD

[0001] 本发明涉及一种化学机械抛光液。 [0001] The present invention relates to a chemical mechanical polishing liquid.

背景技术 Background technique

[0002] 化学机械平坦化(CMP)技术中抛光液的磨料颗粒是关键的组分之,不同的磨料颗粒具有不同的效果。 The abrasive particles [0002] Chemical mechanical planarization (CMP) technique in the polishing liquid is a key component, the different abrasive particles having different effects. 在影响抛光性能的因素中,磨料颗粒往往具有决定的作用,它的性能包括多方面的指标,如磨料颗粒的粒径分布、形状、聚集态以及在抛光液中的固含量,它们对抛光后晶圆的表面粗糙度,表面污染物颗粒,以及各种材料的去除速率等都会有不同影响。 The factors affecting polishing performance, the abrasive particles tend to have a decisive role, which includes various performance metrics, such as the particle size distribution of the abrasive particles, shape, and aggregation state of the solid content in the polishing liquid, after they are polished wafer surface roughness, surface contaminant particles, and so the removal rate of various materials have different effects. 传统磨料二氧化硅溶胶颗粒是球形的颗粒,呈单分散状(单聚,见附图l),对各种材料尤其是介质材料的去除速率有限,只有增大磨料粒子含量来加快去除,而粉状二氧化硅磨料,由于颗粒发生团聚,形成大颗粒,形状不规则,容易引起表面微划伤等各种缺陷。 Traditional abrasive silica sol particles are spherical particles, monodispersed shape (monomeric, see Figure L), in particular limited to various material removal rate of the dielectric material, and only the abrasive particle content is increased to accelerate the removal, and pulverulent silica abrasives due to particle agglomeration, formation of large particles, irregularly shaped, micro prone to scratches and other defects on the surface of various.

发明内容 SUMMARY

[0003] 本发明所要解决的技术问题是克服现有的含有传统的球形单分散硅溶胶颗粒或粉状氧化硅磨料的化学机械抛光液去除速率有限或容易引起晶圆原表面微划伤的缺陷,提供了一种具有较高去除速率,并且用于抛光后晶原表面光洁度和平坦度都较好的化学机械抛光液。 [0003] The present invention is to overcome the technical problem of the conventional containing spherical monodisperse silica particles or powdered silica abrasive chemical mechanical polishing removal rate was limited or likely to cause scratching of the wafer surface of the micro defects in the original provided the original surface finish after polishing the crystal and flatness are good chemical mechanical polishing liquid having a high removal rate, and used.

[0004] 本发明所述的化学机械抛光液含有二聚哑铃形和/或多聚链形二氧化硅溶胶研磨颗粒(附图1)和水。 [0004] The chemical mechanical polishing liquid according to the present invention includes a dimer dumbbell and / or polyalkenyl-shaped abrasive particles of silica sol (FIG. 1) and water.

[0005] 其中,所述的二聚鹏铃形或多聚链形二氧化硅溶胶研磨颗粒的粒径大小较佳的为10〜150nm,更佳的为20〜100nm,最佳的为30〜100nm ;所述的二聚哑铃形和/或多聚链形二氧化硅溶胶研磨颗粒的含量为1〜20%,百分比为质量百分比。 [0005] wherein the particle size of the dimeric or polymeric chain Peng bell-shaped abrasive particles of silica sol is preferably 10~150nm, is more preferably 20~100nm, the best of 30~ 100 nm or; dumbbell according dimeric content and / or polyalkenyl-shaped silica sol is 1~20% abrasive particles, percent by mass percentage.

[0006] 根据需要,本发明的化学机械抛光液还可含有表面活性剂、氧化剂、成膜剂和螯合剂中的一种或多种。 [0006] If necessary, chemical mechanical polishing solution of the present invention may also contain one or more surfactants, antioxidants, chelating agents and film formers.

[0007] 本发明的一较佳实例中,所述的化学机械抛光液含有二聚哑铃形和/或多聚链形二氧化硅溶胶研磨颗粒、表面活性剂和水。 [0007] In a preferred embodiment of the invention, the chemical mechanical polishing liquid containing dimer dumbbell and / or polyalkenyl-shaped silica sol abrasive particles, a surfactant and water. 该化学机械抛光液适用于抛光不同介电常数的材料,较佳的适用于氧化硅(PETEOS)和掺杂碳的氧化硅的绝缘膜等。 The CMP polishing liquid materials suitable for different dielectric constants, preferably applied to the silicon oxide (the PETEOS) insulating film and a silicon oxide doped carbon.

[0008] 本发明的另一较佳实例中,所述的化学机械抛光液含有二聚鹏铃形和/或多聚链形二氧化硅溶胶研磨颗粒、氧化剂、成膜剂、螯合剂、表面活性剂和水。 [0008] Another preferred embodiment of the invention, the chemical mechanical polishing liquid containing dimer Peng bell and / or polymeric chain silica sol shaped abrasive particles, oxidizing agents, film formers, chelating agents, surfactants active agent and water. 该化学机械抛光液较佳的适用于抛光铜或阻挡层材料。 The chemical mechanical polishing suitable for polishing liquid preferably copper or a barrier layer material.

[0009] 其中,所述的表面活性剂为本领域常规用的表面活性剂,其功能是调节不同材料之间的抛光选择比,尤其是不同硅基材料之间的选择比,例如二氧化硅、碳参杂的二氧化硅、氮化硅、碳化硅、氮氧化硅等。 [0009] wherein the surfactant is conventionally used in the art surfactants which functions to adjust the polishing selectivity between different materials, in particular different selection ratio between the silicon-based material, such as silica , carbon doped silicon dioxide, silicon nitride, silicon carbide, silicon nitride oxide and the like. 所述的表面活性剂较佳的为阳离子表面活性剂、阴离子表面活性剂、两性表面活性剂和非离子型表面活性剂中的一种或多种。 Preferred cationic surfactants, anionic surfactants, amphoteric surfactants and nonionic surfactants, one or more of said surfactant. 所述的阳离子表面活性剂较佳的为数均分子量为2000〜50000的聚乙烯亚胺和/或季铵盐类表面活性剂(如十六烷基三甲基氯化铵);所述的阴离子型表面活性剂较佳的为数均分子量为1000〜50000的聚丙烯酸类聚合物,可以是均聚物,也可以是共聚物;所述的两性表面活性剂较佳的为甜菜碱类表面活性剂;所述的非离子型表面活性剂较佳的为数均分子量为200〜 20000的聚乙二醇和/或亲水疏水平衡值(HLB值)为5〜15的聚氧乙烯醚。 Said cationic surfactant is a preferred number average molecular weight polyethyleneimine 2000~50000 and / or a quaternary ammonium salt surfactants (such as cetyl trimethyl ammonium chloride); the anion surfactants preferred number average molecular weight of the polyacrylic polymers 1000~50000 may be a homopolymer or a copolymer; the preferred amphoteric surfactant is a betaine surfactant ; said nonionic surfactant is preferred number average molecular weight of polyethylene glycol and / or hydrophile-lipophile balance (HLB value) of 20,000 200~ polyoxyethylene ethers of 5~15. 所述的表面活性剂的含量较佳的为0. 001〜0. 1%,更佳的为0. 005〜0. 05%,百分比为质量百分比。 The content of the surfactant is preferably 0.5 mass percent 001~0. 1%, more preferably 0. 005~0 05% percentage. [0010] 其中,所述的氧化剂为本领域常规使用的氧化剂,较佳的为过氧化物、过硫化物和硝酸铵中的一种或多种;更佳的为过氧化氢、过氧化氢脲、过氧乙酸、过氧化苯甲酰、过硫酸钾、过硫酸铵和硝酸铵中的一种或多种;氧化剂的含量为质量百分比0. 1〜10%。 [0010] wherein the oxidant conventionally used in the art oxidizing agent, preferably a peroxide, persulfide, and one or more of ammonium nitrate; more preferably is hydrogen peroxide, hydrogen peroxide urea, peracetic acid, benzoyl peroxide, potassium persulfate, ammonium sulfate and ammonium nitrate one or more of; the oxidizing agent content is 0.5 mass% 1~10%. [0011] 其中,所述的成膜剂为本领域常规使用的成膜剂,其功能是在金属表面形成不溶性保护膜,以达到缓蚀和提高平坦化效率的目的。 [0011] wherein said film-forming agent film formers conventionally used in the art, its function is to form an insoluble protective film, in order to achieve the object of corrosion and improve the efficiency of flattening of the metal surface. 所述的成膜剂较佳的为唑类有机物;更佳的为苯并三氮唑及其衍生物,以及四唑及其衍生物中的一种或多种。 The film-forming agent is preferably organic azole; is more preferably benzotriazole and its derivatives, tetrazole and its derivatives of one or more. 所述的苯并三氮唑衍生物较佳的为羧基和/或酯基取代的苯并三唑衍生物;所述的四唑衍生物较佳的为苯基取代的四唑衍生物、巯基取代的四唑衍生物、氨基取代的四唑衍生物、苯基和巯基取代的四唑衍生物、苯基和氨基取代的四唑衍生物、巯基和氨基取代的四唑衍生物,以及苯基、巯基和氨基共同取代的四唑衍生物中的一种或多种;所述的酯基取代的三唑衍生物为烷氧基羰基取代的三唑衍生物和/或芳氧基羰基取代的三唑衍生物。 Said benzotriazole derivative preferably is a carboxyl group and / or ester-substituted benzotriazole derivatives; the tetrazole derivative is preferably a substituted phenyl tetrazole derivative, a mercapto group substituted tetrazole derivatives, tetrazole derivatives substituted amino group, a substituted phenyl group and a mercapto tetrazole derivative, and an amino-substituted phenyl tetrazole derivative, a mercapto group, and amino-substituted tetrazole derivatives, and phenyl a common mercapto and amino-substituted derivatives of tetrazole or more; the ester-substituted triazole derivative alkoxycarbonyl-substituted triazole derivatives and / or substituted aryloxycarbonyl group triazole derivatives. 所述的成膜剂最佳的为苯并三氮唑、苯并咪唑、吲哚、甲基苯并三氮唑、吲唑、N-甲基苯三唑、4-羧基苯并三唑甲酯、5-羧基苯并三唑甲酯、4-羧基苯并三唑丁酯、5-羧基苯并三唑丁酯、4-羟基苯并三氮唑、5-羟基苯并三氮唑、1-H四氮唑、5_氨基四氮唑、5_甲基-四氮唑和1-苯基-5巯基四氮唑中的一种或多种。 The optimum film-forming agent is benzotriazole, benzimidazole, indole, methyl benzotriazole, indazole, N- methyl benzotriazole, 4-carboxy-benzotriazole A ester, methyl 5-carboxy-benzotriazole, 4-carboxy-butyl benzotriazole, benzotriazole-5-carboxy-butyl, 4-triazole-hydroxybenzotriazole, 5-hydroxybenzotriazole triazole, 1-H-tetrazol, 5_ aminotetrazole, 5_ methyl - tetrazolium and 1-phenyl-5-mercapto group of one or more of the tetrazolium. 所述的成膜剂的含量较佳的为0. 001〜1%,更佳的为0. 05〜0. 5%,最佳的为 The content of the film-forming agent is preferably 0.5 001~1%, more preferably 0. 05~0. 5% for the best

0. 1〜0.4%,百分比为质量百分比。 1~0.4 0.5%, as a percentage of mass percentage.

[0012] 所述的螯合剂为本领域常规使用的螯合剂,选自有机膦、含氮杂环类、有机胺类和水溶性羧酸类聚合物中的一种或多种。 [0012] The chelating agent is a chelating agent conventionally used in the art, selected from organic phosphines, nitrogen-containing heterocycles, amines and water-soluble organic carboxylic acid polymer of one or more. 其中,所述的有机膦较佳的为有机磷酸类化合物和/或有机磷酸酯类化合物的螯合剂,更佳的为羟基亚乙基二膦酸(HEDP)、氨基三亚甲基膦酸(ATMP)、乙二胺四亚甲基膦酸(EDTMP)、二亚乙基三胺五亚甲基膦酸(DTPMP) 、2-膦酸丁烷-l,2,4三羧酸(PBTCA)、2-羟基膦酰基乙酸(HPAA)、聚氨基聚醚基亚甲基膦酸和多元醇磷酸酯(PAPEMP)中的一种或多种。 Wherein said organic phosphine is preferably an organic phosphoric acid chelating compound and / or an organic phosphate-based compound, more preferably is hydroxy ethylidene diphosphonic acid (of HEDP), amino-trimethylene phosphonic acid (ATMP ), ethylenediamine tetramethylene phosphonic acid (EDTMP), diethylene triamine penta methylene phosphonic acid (DTPMP), 2- butane phosphonic acid -l, 2,4-tricarboxylic acid (PBTCA), One or more of 2-hydroxy phosphonoacetic acid (HPAA), polyamino polyether methylene phosphonic acid and a polyhydric alcohol phosphate ester (PAPEMP) in. 其中,所述含氮杂环类较佳的为含有两个氮原子的六元杂环、三个氮原子的六元杂环和含有两个氮原子的五元杂环的一种或多种,更佳的为嘧啶、 吡啶、哌啶、哌嗪、哒嗪、吗啉、氨基取代的三唑类化合物和羧基取代的三唑类化合物中的一种或多种。 Wherein the nitrogen-containing heterocyclic six-membered heterocyclic ring containing two nitrogen atoms, of a preferred Hexaheterocyclic containing three nitrogen atoms and two nitrogen atoms, five-membered heterocyclic or more , more preferably a pyrimidine, pyridine, piperidine, piperazine, pyridazine, morpholine, an amino group substituted with one or more of a triazole compound and a carboxyl-substituted triazole compound. 其中,所述的有机胺类化合物较佳的为伯胺、仲胺、叔胺和季铵类化合物中的一种或多种,更佳的为二胺、多烯多胺和环胺中的一种或多种,如己二胺、二乙烯三胺、三乙烯四胺、四乙烯五胺和环己胺等。 Wherein a primary amine, secondary amine, tertiary amine and quaternary ammonium compounds of one of the organic amine compound is preferably one or more, more preferably a diamine, polyamine and polyene cyclic amine one or more, such as hexamethylene diamine, diethylene triamine, triethylene tetramine, tetraethylene pentamine and cyclohexylamine. 其中,所述的水溶性羧酸类聚合物包括均聚物和共聚物,也包括聚羧酸类化合物的盐,较佳的为钠盐或铵盐,优选聚丙烯酸、聚丙烯酸酯、聚丙烯酸钠盐、聚丙烯酸铵盐、聚马来酸、聚环氧琥珀酸和聚天冬氨酸等均聚物、丙烯酸_丙烯酸酯共聚物、丙烯酸_马来酸共聚物和丙烯酸_有机磷酸_磺酸盐共聚物中的一种或多种。 Wherein the water soluble carboxylic acid polymers include homopolymers and copolymers, polycarboxylic acid compounds include salts, preferably sodium or ammonium salt, preferably a polyacrylic acid, polyacrylates, polyacrylic acid sodium, ammonium polyacrylate, polymaleic acid, polyepoxy succinic acid and polyaspartic acid homopolymers, acrylic _ acrylate copolymer, maleic acid copolymer of acrylic acid and acrylic _ _ _ organic sulfonic acid one or more acid copolymer. 所述的水溶性羧酸类聚合物的数均分子量较佳的为200〜5000。 The number of water soluble carboxylic acid polymer average molecular weight is preferably 200~5000. 所述的有机螯合剂的含量较佳地为质量百分比0. 001〜5%,更佳的为质量百分比0. 1〜2%,最佳的为质量百分比0.2〜 The content of the organic chelating agent is preferably 0.5 mass percent 001~5%, more preferably 1 to 2 mass percentage of 0.5%, the optimum mass percentage 0.2~

1. 5%。 1.5%.

[0013] 本发明中,所述的水较佳的为去离子水,水的用量为补足质量百分比100%。 [0013] In the present invention, the water is preferably deionized water, an amount of water to make up 100% by mass. [0014] 本发明的化学机械抛光液中还可含有本领域其他常规添加剂,如粘度调节剂、稳 [0014] The chemical mechanical polishing liquid of the invention may also contain other conventional additives in the art, such as viscosity regulators, stabilizers

5定剂、防霉剂和杀菌剂等。 5 set agents, antifungal agents, and fungicides.

[0015] 本发明中的化学机械抛光液的酸碱度会影响其抛光性能,酸性条件下对氧化硅的材料抛光效果较好,碱性条件下对掺杂碳的氧化硅抛光效果较好,较佳的化学机械抛光液的pH为2〜4或9〜12。 [0015] In the present invention, the pH of the chemical mechanical polishing liquid to the polishing effect will affect the silica material under its polishing performance, preferably acidic conditions, preferably of carbon-doped silicon oxide polishing under basic conditions, preferably pH of chemical mechanical polishing liquid to ~ 4 or 9~12.

[0016] 本发明的抛光液由上述成分简单均匀混合,之后采用pH调节剂调节至合适pH值即可制得。 [0016] The polishing liquid of the invention simply by mixing the above ingredients uniformly, followed by pH adjusting agent is adjusted to an appropriate pH value can be prepared. pH调节剂可选用本领域常规pH调节剂,如氢氧化钾、氨水和硝酸等。 optional pH adjusting agent pH adjusting agents conventional in the art, such as potassium hydroxide, ammonia and nitric acid. [0017] 本发明所用试剂和原料均市售可得。 [0017] The present invention, both the reagents and starting materials are commercially available.

[0018] 本发明的积极进步效果在于:本发明的含有二聚哑铃形或多聚链形的二氧化硅溶胶颗粒磨料的化学机械抛光液,较之采用传统球形单分散的硅溶胶颗粒作为磨料的抛光液,对介质材料的抛光效果具有更高的去除速率,同时磨料颗粒形状规则,抛光后的晶圆表面光洁度和平坦度较好,能够满足各种工艺条件下对介质材料表面的要求,解决了含有传统二氧化硅溶胶颗粒的化学机械抛光液抛光的去除速率有限和微划伤问题。 [0018] The positive effect of the present invention is characterized in progress: a chemical mechanical polishing liquid containing dimeric or polymeric chain dumbbell shaped abrasive particle of the silica sol of the present invention, compared with conventional spherical monodisperse silica particles as abrasive the polishing liquid having a higher removal rate of polishing the dielectric material, while the abrasive particles regular shape, surface finish and flatness of the wafer after polishing better able to meet the surface of the dielectric material under a variety of process conditions, solve the finite chemical mechanical polishing solution containing silica sol particles conventional polishing removal rate and micro-scratching problems.

附图说明 BRIEF DESCRIPTION

[0019] 图1为二氧化硅颗粒聚集态和形状的关系图。 [0019] FIG. 1 is a state of aggregation and shape of the silica particles in relation to FIG. 具体实施方式 Detailed ways

[0020] 下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实 [0020] The present invention is further described below by way of example, but not to limit the invention thus the real

施例范围之中。 Applied within the scope of embodiments.

[0021] 实施例1〜11 [0021] Example 1~11

[0022] 表1给出了本发明的化学机械抛光液实施例1〜11的配方,按表1中所列组分及其含量,百分比均为质量百分比简单混合均匀,用去离子水补足抛光液含量至质量百分比100% ,再用pH调节剂调节抛光液pH至所列值,即制得各化学机械抛光液。 [0022] Table 1 gives the chemical mechanical polishing liquid according to the present invention Formulation Example 1~11 embodiment, the components as listed in Table 1 and its contents, percentages are percentages by weight simply mixing uniformly, deionized water up to a polishing solution content to 100% by mass, then the pH adjusting agent to adjust the pH values ​​listed polishing liquid, i.e., chemical mechanical polishing to obtain each solution. [0023]<table>table see original document page 7</column></row> <table>[0024]<table>table see original document page 8</column></row> <table> [0025]<table>table see original document page 9</column></row> <table><table>table see original document page 10</column></row> <table> 1% [0027] 效果实施例 [0023] <table> table see original document page 7 </ column> </ row> <table> [0024] <table> table see original document page 8 </ column> </ row> <table> [0025] < table> table see original document page 9 </ column> </ row> <table> <table> table see original document page 10 </ column> </ row> <table> 1% [0027] effects of the embodiment

[0028] 同等条件下,不同形状和粒径的二氧化硅溶胶颗粒对抛光效果的影响 [0028] Under the same conditions, the effects of different shape and size of the polishing particles of silica sol Effect

[0029] 表2中的抛光液均为磨料颗粒加上pH调节剂和去离子水而没有其它组分,抛光条 [0029] Table 2 in the polishing liquid abrasive particles are combined with a pH adjusting agent, and deionized water and no other components, polishing strip

件:抛光机台为Logitech(英国)PM50型,politex抛光垫,研磨压力2psi,研磨台转速70 Member: Polishing machine as the Logitech (UK) PM50 type, Politex polishing pad, the polishing pressure of 2 psi, the rotational speed of the polishing table 70

转/分钟,研磨头自转转速90转/分钟,滴加速度100ml/min。 Rev / min, the polishing head rotation speed of 90 revolutions / minute, the dropping rate 100ml / min.

[0030] 表2 [0030] TABLE 2

[0031] [0031]

<table>table see original document page 10</column></row> <table><table>table see original document page 11</column></row> <table> <Table> table see original document page 10 </ column> </ row> <table> <table> table see original document page 11 </ column> </ row> <table>

[0033] CDO :碳参杂的二氧化硅,是一种低介电材料。 [0033] CDO: carbon doped silicon dioxide, it is a low dielectric material.

[0034] 从表2可以看出:本发明使用的鹏铃形或链形的溶胶颗粒具有较高的介电材料去除速率。 [0034] As can be seen from Table 2: Peng bell-shaped or chain-shaped sol particles of the present invention has a high dielectric material removal rate.

[0035] 实施例15和16与参比2相比,酸性下采用二聚哑铃形颗粒和多聚链形颗粒, PETEOS的去除速率明显提高,尤其是二聚鹏铃形颗粒提高的幅度接近三倍,碳参杂的低介电材料去除速率增加了近30% ;而在碱性条件下,尤其是高pH下,CDO的去除速率提高幅度很大,最大可接近四倍,PETEOS的有两倍的提升。 [0035] Examples 15 and 16 compared to the reference 2, the use of dimeric acid particles dumbbell-shaped particles and polymeric chains, PETEOS removal rate is significantly improved, especially dimeric Peng bell-shaped particles improved by nearly three fold, carbon doped low dielectric material removal rate increases by almost 30%; and under alkaline conditions, particularly at high pH, ​​CDO removal rate greatly improved amplitude four times the maximum accessible, the two PETEOS fold increase. 同时,考察晶片中心和边沿区域的去除速率分布情况:不同区域中的最大去除速率和最小去除速率得之差占平均去除速率的百分比,即抛光的均一性,经对比发现,本发明的抛光液使用的二聚哑铃形和/或多聚链形的溶胶颗粒对抛光后的介电材料表面具有较好抛光均一性,也没有轻微划伤,能够满足各种工艺条件下对介电质表面的要求。 Meanwhile, the inspection center of the wafer and the removal rate at the edge regions distribution: maximum removal rate in the different regions and the minimum removal rate difference as a percentage of the average removal rate obtained, namely polishing uniformity, by comparison, the polishing liquid of the invention using dumbbell dimeric and / or polymeric chain-shaped sol particles having a surface of the dielectric material is preferably polished after polishing uniformity, no minor scratches, it is possible to meet various conditions of the dielectric surface Claim.

Claims (14)

  1. 一种化学机械抛光液,其含有二聚哑铃形和/或多聚链形二氧化硅溶胶研磨颗粒和水。 A chemical mechanical polishing solution containing dumbbell dimeric and / or polymeric chain-shaped silica sol abrasive particles and water.
  2. 2. 如权利要求l所述的化学机械抛光液,其特征在于:所述的二聚哑铃形或多聚链形二氧化硅溶胶研磨颗粒的粒径大小为10〜150nm。 2. The chemical mechanical polishing solution according to claim l, wherein: said dimeric or polymeric chain dumbbell-shaped abrasive particles of silica sol particle size is 10~150nm.
  3. 3. 如权利要求2所述的化学机械抛光液,其特征在于:所述的二聚哑铃形或多聚链形二氧化硅溶胶研磨颗粒的粒径大小为20〜100nm。 3. The chemical mechanical polishing solution according to claim 2, wherein: said dimeric or polymeric chain dumbbell-shaped abrasive particles of silica sol particle size is 20~100nm.
  4. 4. 如权利要求3所述的化学机械抛光液,其特征在于:所述的二聚哑铃形或多聚链形二氧化硅溶胶研磨颗粒的粒径大小为30〜100nm。 4. The chemical mechanical polishing solution according to claim 3, wherein: the particle size of the dimeric dumbbell shaped dioxide or silica abrasive particles polyalkene is 30~100nm.
  5. 5. 如权利要求l所述的化学机械抛光液,其特征在于:所述的二聚哑铃形和/或多聚链形二氧化硅溶胶研磨颗粒的含量为1〜20%,百分比为质量百分比。 5. The chemical mechanical polishing solution according to claim l, wherein: the content of dimeric and dumbbell / or polymeric chain-shaped silica sol is 1~20% abrasive particles, percentages are by mass .
  6. 6. 如权利要求1所述的化学机械抛光液,其特征在于:所述的化学机械抛光液还含有表面活性剂、氧化剂、成膜剂和螯合剂中的一种或多种。 The chemical mechanical polishing liquid as claimed in claim 1, wherein: said chemical mechanical polishing liquid further contains a surfactant, an oxidizing agent, into one or more chelating agents and film formers.
  7. 7. 如权利要求6所述的化学机械抛光液,其特征在于:所述的化学机械抛光液还含有表面活性剂,或还含有表面活性剂、氧化剂、成膜剂和螯合剂。 7. The chemical mechanical polishing solution according to claim 6, wherein: said chemical mechanical polishing liquid further contains a surfactant, or further contains a surfactant, an oxidizing agent, a film forming agent and a chelating agent.
  8. 8. 如权利要求6或7所述的化学机械抛光液,其特征在于:所述的表面活性剂为阳离子表面活性剂、阴离子表面活性剂、两性表面活性剂和非离子型表面活性剂中的一种或多种;所述的氧化剂为过氧化物、过硫化物和硝酸铵中的一种或多种;所述的成膜剂为唑类有机物;所述的螯合剂为有机膦、含氮杂环类、有机胺类和水溶性羧酸类聚合物中的一种或多种。 8. The chemical mechanical polishing solution of claim 6 or claim 7, wherein: the surfactant is a cationic surfactant, an anionic surfactant, an amphoteric surfactant and a nonionic surface active agent one or more; the oxidizing agent is peroxide, ammonium sulfide and one or more; the organic film formers azole; said chelating agent is an organic phosphine, containing one or more nitrogen heterocycles, organic amines and water-soluble carboxylic acid polymer.
  9. 9. 如权利要求8所述的化学机械抛光液,其特征在于:所述的唑类有机物为苯并三氮唑及其衍生物,以及四唑及其衍生物中的一种或多种;所述的有机膦为有机磷酸类化合物和/或有机磷酸酯类化合物的螯合剂;所述的含氮杂环类为含有两个氮原子的六元杂环、 含有三个氮原子的六元杂环和含有两个氮原子的的五元杂环中的一种或多种;所述的有机胺类为伯胺、仲胺、叔胺和季铵类化合物中的一种或多种;所述的水溶性羧酸类聚合物为水溶性羧酸类均聚物、水溶性羧酸类共聚物和聚羧酸类化合物的盐中的一种或多种。 Said liquid chemical mechanical polishing as claimed in claim 8, wherein: said organic azole is benzotriazole and its derivatives, tetrazole and its derivatives of one or more; the organic phosphine compound and an organic phosphoric acid chelating / or organophosphate compounds; the nitrogen-containing heterocyclic Hexaheterocyclic containing two nitrogen atoms, three nitrogen atoms containing a six-membered and one or more heterocyclic five-membered heterocyclic containing two nitrogen atoms in; the organic amines are primary amines, secondary amines, tertiary amines and quaternary ammonium compounds of one or more; said water soluble carboxylic acid polymer is a homopolymer of a water-soluble carboxylic acids, the one or more water-soluble salts of copolymers of carboxylic acids and polycarboxylic acid compound in the.
  10. 10. 如权利要求9所述的化学机械抛光液,其特征在于:所述的苯并三氮唑衍生物为羧基和/或酯基取代的苯并三唑衍生物;所述的四唑衍生物为苯基取代的四唑衍生物、巯基取代的四唑衍生物、氨基取代的四唑衍生物、苯基和巯基取代的四唑衍生物、苯基和氨基取代的四唑衍生物、巯基和氨基取代的四唑衍生物,以及苯基、巯基和氨基共同取代的四唑衍生物中的一种或多种。 10. The chemical mechanical polishing solution according to claim 9, wherein: said benzotriazole derivative is carboxyl and / or ester-substituted benzotriazole derivatives; the tetrazole derivative was substituted for the phenyl tetrazole derivative, a mercapto-substituted tetrazole derivatives, tetrazole derivatives substituted amino group, a substituted phenyl group and a mercapto tetrazole derivative, and an amino-substituted phenyl tetrazole derivative, a mercapto group and amino-substituted tetrazole derivatives, and one or more phenyl group, a mercapto group, and an amino-substituted tetrazole common derivative.
  11. 11. 如权利要求8所述的化学机械抛光液,其特征在于:所述的氧化剂为过氧化氢、过氧化氢脲、过氧乙酸、过氧化苯甲酰、过硫酸钾、过硫酸铵和硝酸铵中的一种或多种;所述的阳离子表面活性剂为数均分子量为2000〜50000的聚乙烯亚胺和/或十六烷基三甲基氯化铵;所述的阴离子型表面活性剂为数均分子量为1000〜50000的聚丙烯酸类聚合物;所述的两性表面活性剂为甜菜碱类表面活性剂;所述的非离子型表面活性剂为数均分子量为200-20000的聚乙二醇和/或亲水疏水平衡值为5〜15的聚氧乙烯醚;所述的成膜剂为苯并三氮唑、4_羧基苯并三氮唑甲酯、5_羧基苯并三氮唑甲酯、4_羧基苯并三氮唑丁酯、 5-羧基苯并三氮唑丁酯、4-羟基苯并三氮唑、5-羟基苯并三氮唑、苯并咪唑、喷哚、甲基苯并三氮唑、吲唑^-甲基苯三唑、1-H四氮唑、5-氨基四氮唑、5-甲基-四氮唑和1 11. The chemical mechanical polishing solution according to claim 8, wherein: said oxidant is hydrogen peroxide, urea hydrogen peroxide, peracetic acid, benzoyl peroxide, potassium persulfate, ammonium persulfate, and one or more ammonium nitrate; said cationic surfactant is the number average molecular weight polyethyleneimine 2000~50000 and / or cetyltrimethylammonium chloride; said anionic surfactant agent number average molecular weight of the polyacrylic polymers 1000~50000; the amphoteric surfactant is a betaine surfactant; said nonionic surfactant is a polyethylene having a number average molecular weight of 200-20000 di alcohol and / or a hydrophilic hydrophobic balance value 5~15 polyoxyethylene ethers; forming agent is benzotriazole, benzotriazole 4_ carboxy ester, carboxy benzotriazole 5_ methyl, carboxyl 4_ butyl benzotriazole, benzotriazole 5-carboxy-butyl, 4-hydroxyphenyl and triazole, 5-hydroxybenzotriazole triazole, benzimidazole, indole spray, methyl-benzotriazole, indazole ^ - methyl-benzotriazole, 1-H-tetrazol-5-aminotetrazole, 5-methyl - 1 and tetrazolium -苯基-5巯基四氮唑中的一种或多种;所述的螯合剂为羟基亚乙基二膦酸、氨基三亚甲基膦酸、乙二胺四亚甲基膦酸、二亚乙基三胺五亚甲基膦酸、2-膦酸丁烷-l,2,4三羧酸、2-羟基膦酰基乙酸、聚氨基聚醚基亚甲基膦酸、多元醇磷酸酯、嘧啶、吡啶、哌啶、哌嗪、哒嗪、吗啉、氨基取代的三唑类化合物、羧基取代的三唑类化合物、己二胺、二乙烯三胺、三乙烯四胺、四乙烯五胺、环己胺、聚丙烯酸、聚丙烯酸酯、聚丙烯酸钠盐、聚丙烯酸铵盐、聚马来酸均聚物、聚环氧琥珀酸均聚物、聚天冬氨酸均聚物、丙烯酸_丙烯酸酯共聚物、丙烯酸_马来酸共聚物和丙烯酸_有机磷酸_磺酸盐共聚物中的一种或多种。 - phenyl-5-mercapto group of one or more of the tetrazolium; said chelating agent is a hydroxy ethylidene diphosphonic acid, amino-trimethylene phosphonic acid, ethylenediamine tetramethylene phosphonic acid, diethylenetriamine triamine penta methylene phosphonic acid, 2-butane phosphonic acid -l, 2,4-tricarboxylic acid, 2-hydroxy phosphonoacetic acid, polyamino polyether methylene phosphonic acid, polyol phosphate, pyrimidine, pyridine, piperidine, piperazine, pyridazine, morpholine, an amino-substituted triazole compound, a carboxy-substituted triazole compounds, hexamethylene diamine, diethylene triamine, triethylene tetramine, tetraethylene pentamine , cyclohexylamine, polyacrylic acid, polyacrylate, sodium polyacrylate, ammonium polyacrylate, polymaleic acid homopolymer, polyethylene homopolymer acid, polyaspartic acid homopolymer, acrylic _ acrylate copolymers, acrylic _ one or more copolymers of maleic acid and acrylic acid _ _ organic sulfonate copolymer.
  12. 12. 如权利要求8所述的化学机械抛光液,其特征在于:所述的水溶性羧酸类聚合物的数均分子量为200〜5000。 12. The chemical mechanical polishing solution according to claim 8, wherein: the number of said water soluble carboxylic acid polymer average molecular weight of 200~5000.
  13. 13. 如权利要求6或7所述的化学机械抛光液,其特征在于:所述的表面活性剂的含量为质量比0. 001〜0. 1% ;所述的氧化剂的含量为0. 1〜10% ;所述的成膜剂的含量为0. 001〜1% ;所述的螯合剂的含量为0. 001〜5% ;百分比为质量百分比。 13. The chemical mechanical polishing solution of claim 6 or claim 7, wherein: the content of the surfactant is 0. 001~0 mass ratio of 1%; the content of the oxidizing agent is 0.1 ~ 10%; the content of the film-forming agent is 0. 001~1%; content of said chelating agent is 0. 001~5%; percentages are percent by mass.
  14. 14. 如权利要求1所述的化学机械抛光液,其特征在于:所述的化学机械抛光液的PH为2〜4或9〜12。 14. The chemical mechanical polishing solution according to claim 1, wherein: said chemical mechanical polishing liquid PH ~ 4 is or 9~12.
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