CN109760218A - A kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry - Google Patents
A kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry Download PDFInfo
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- CN109760218A CN109760218A CN201910120298.2A CN201910120298A CN109760218A CN 109760218 A CN109760218 A CN 109760218A CN 201910120298 A CN201910120298 A CN 201910120298A CN 109760218 A CN109760218 A CN 109760218A
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Abstract
The present invention relates to a kind of preparation methods for electronics, the ultraprecise semiconductor material of communications industry, include the following steps: that cutting semiconductor materials are gone out chip first with cutting equipment by (1)；(2) chip is fixed on one piece of supporter with a kind of binder；(3) fixed chip on a support is ground on grinder；(4) fixed chip on a support is processed by shot blasting；(5) surface cleaning processing is carried out to the chip after polishing.Ultraprecise semiconductor material of the invention has lower degree of roughness and higher processing quality, and can be avoided the risk of wafer breakage, is adapted for epitaxial growth, can be widely applied to the industries such as electronics, communication and the energy.
Description
Technical field
The present invention relates to a kind of preparation methods for electronics, the ultraprecise semiconductor material of communications industry.
Background technique
Artificial crystal material is widely used in industry, medical treatment, national defence, boat with the rapid development of photoelectric technology at present
The fields such as its aviation, scientific research, the material properties such as institutional framework, electricity and the optical characteristics of artificial crystal material are in its application
Generally change can be generated because using the difference in field and using the length of time, eventually to the service life of component and function
Energy characteristic causes great adverse effect.
With the continuous development of science and technology, requirement of the window material to functions such as its photoelectric characteristics also steps up, people
Requirement to window material increasingly tend to multi-functional, intelligent and high speed, to be wanted to the performance of optical window material
Ask also higher and higher, the performance of traditional sense upper optical glass window cannot reach existing practical application standard.Sapphire
(α-Al2O3) monocrystalline because have good electrical insulating property, translucency, chemical inertness, wearability, high rigidity and high-melting-point (2040
DEG C) etc. unique excellent material property and be widely used in aerospace and microelectronics, photoelectronic industry etc. as optical material
It is excellent that the optical window in field, especially sapphire glass have extreme hardness and structural strength, wear-resistant, material proportion is low etc.
Gesture has played great advantage to loss of weight aspect in military project and aerospace industry.In addition, sapphire such as high-end handsets window,
Application on some civilian window parts such as camera gun, scanner, projector protection prism also constantly expands.
However, the ultra-precision surface that sapphire wafer is more demanding as Surface Qualities such as substrate material, window materials
When component, surface quality has strong influence to its functional characteristic and optical characteristics, therefore in practical applications to blue precious
The surface quality of stone monocrystalline has high requirement.For example, sapphire wafer is as window material in terms of military project or aerospace
Material is occasionally used in harsh working environment, and the quality of surface quality is directly related to the integrality of detection information and accurate
Property；In civil field, sapphire wafer can be used as window material and substitute various watch mirrors and panel, as on common iPhone very
Early just to use sapphire single-crystal as its Home key, volume key and front and rear camera lens head etc., these applications are both needed to sapphire crystalline substance
Piece surface smoothness with higher and the damage of lesser subsurface stratum, and propose the processing request of global planarizartion.But due to
Sapphire crystal has the characteristics that hardness is high, brittleness is big, chemical property is stable, and sapphire crystal is caused to be difficult to grinding and polishing, add
It is long between working hour, and phenomena such as be easy to appear crushing, chipping in process.Therefore, ultra-smooth is efficiently processed without subsurface stratum
The sapphire wafer of damage has important scientific meaning and application prospect.
Sapphire single-crystal has excellent physical and mechanical property, theoretically, when any impurity that undopes, sapphire single-crystal
Materials'use characteristic is optimum state, its density value size is 3.987g/cm at this time3, however percentage is not present in real life
Hundred purity monocrystalline sapphire, in the presence of some impurity, density is about in 3.95g/cm3~4.10g/cm3Model
In enclosing, under normal circumstances, if its density value has been more than the range in practical weighing and calculating, show that the sapphire single-crystal has
The internal exergy dissipations such as micropore, gap and micro-crack injure defect presence.Since sapphire single-crystal has anisotropy, according to its lattice class
Type obtains different crystal structures when different direction is cut, and can be divided into A respectively to sapphire, C to sapphire and R to indigo plant
Jewel, wherein the sapphire physicochemical properties of different crystal orientations differ greatly, and effect is also not quite similar.C mainly makees to sapphire
For substrate growth semiconductor material；A is to sapphire because excellent optical property and high-insulation is applied to window material, mesh
Before be mainly used for the window material in the fields such as aerospace, military project；And R is mainly used in microelectronic integrated circuit to sapphire.
Corresponding change can occur for the mechanical performance with the variation monocrystalline sapphire of temperature, especially in the higher situation of temperature, at this time
Sapphire mechanical performance can there is a phenomenon where reducing rapidly, and its elasticity modulus generally also can with temperature it is continuous rise and
The phenomenon that steady decline is presented.Good thermal characteristic is sapphire single-crystal better than other window substrate materials and is answered extensively
The main thermal characteristic of one major reason, sapphire single-crystal has close pass with the thermal vibration of crystal orientation in its structure
Connection, it is generally the case that sapphire optic damage threshold value increases with the increase of specific heat.Generally, the heat of sapphire single-crystal
Conductivity and coefficient of thermal expansion are the main indicators for evaluating its cooling efficiency height, and the rapid cooling of crystal is taken to its table of crystal
Face cooling mode is realized.
In order to improve the material removal rate and surface quality of monocrystalline sapphire, the machine relied on according to various polishing technologies
The different of tool energy, chemical energy, recombination energy and extraordinary energy field etc. can format of fields.At present both at home and abroad to sapphire Ultra-precision Turning side
Method mainly has chemically mechanical polishing, ion beam polishing, floating polishing, Magnetorheological Polishing, laser polishing etc..At present about sapphire
There are many monocrystalline polishing process method, however these different polishing processes suffer from respective shortcoming, and Purely mechanical is ground
Grinding and polishing light can make the surface accurate of polished part process the requirement for meeting global planarizartion, but only remove plane of crystal by abrasive grain
When the higher crystal of material especially hardness, polishing efficiency is extremely low, and is easy to be formed on surface and scratch.Although chemical polishing can mention
The surface processing efficiency of height polishing chip, but so that it is difficult to realize the polishing wafer surface overall situation flat for the limitation of its own processing conditions
The effect of smoothization, and since chemical action is stronger, it is easy that spot corrosion occurs on surface, forms mist spot.And throwing more novel at present
Light technology such as laser beam, ion beam polishing are not only difficult to realize the leveling of polishing exemplar, technical immature
Its application is caused not promoted.The polishing technology as global planarizartion is chemically-mechanicapolish polished, it is good that acquisition can be obtained
Polishing effect, obtain super-smooth surface, be applied to the polishing of many materials.
However, how to further increase the material removal rate of monocrystalline sapphire and surface quality is always grinding for this field
Send out focus.
Summary of the invention
Need the technology further increased to solve sapphire material removal rate and surface quality in the prior art
Problem, the invention proposes following technical solutions:
A kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry, includes the following steps:
(1) cutting semiconductor materials are gone out to the chip with a thickness of 100~200 μm first with cutting equipment；
(2) chip is fixed on one piece of supporter with a kind of binder, wherein above support is the plate of rigidity；
(3) fixed chip on a support is ground on grinder；
(4) fixed chip on a support is processed by shot blasting；
(5) surface cleaning processing is carried out to the chip after polishing.
Wherein, surface cleaning processing includes successively clear using dewaxing cleaning agent, acetone, dehydrated alcohol, deionized water ultrasound
It washes, is then dried up sample using cold wind.
Wherein, the basic parameter of polishing treatment is as follows: pressure is 300 grams/cm, upper disk rotating speed 60rpm/min, under
Disk rotating speed 140rpm/min, polishing flow velocity are 70ml/min, and temperature is 25 DEG C, and polishing time is 2 hours.
Wherein, the polishing fluid of polishing treatment is composed of the following components: the partial size of 2wt%~4wt% is 6nm~10nm oxidation
Silicon particle, the partial size of 20wt%~30wt% are the silicon oxide particle of 30nm~80nm, and the partial size of 6wt%~8wt% is 120nm
~140nm silicon oxide particle, 0.1wt% surfactant, the sodium sulphate of 1wt%, sodium hydroxide, surplus are water.The polishing
The pH of liquid is 9.5~10.5.
Wherein, surfactant is that acrylic acid-acrylic ester-co-polymer of sulfonate and betanaphthol polyoxyethylene ether press quality
It compounds and constitutes than 1:1.
Preferably, semiconductor material is sapphire.
Technical solution of the present invention has as follows by beneficial effect:
(1) use the partial size of 2wt%~4wt% for 6nm~10nm silicon oxide particle, the partial size of 20wt%~30wt% is
The silicon oxide particle of 30nm~80nm, the partial size of 6wt%~8wt% are 120nm~140nm silicon oxide particle and acrylic acid-the third
Olefin(e) acid ester-co-polymer of sulfonate can be both with such combine of the surfactant that betanaphthol polyoxyethylene ether mass ratio is 1:1
The degree of roughness of wafer surface can be reduced by improving sapphire removal rate again.
(2) ultraprecise semiconductor material of the invention has lower degree of roughness and higher processing quality, and energy
The risk for enough avoiding wafer breakage, is adapted for epitaxial growth, can be widely applied to the industries such as electronics, communication and the energy.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments and comparative example,
The present invention will be described in further detail.
Embodiment 1
A kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry, the ultraprecise semiconductor material
The preparation process of material includes the following steps:
(1) cutting semiconductor materials are gone out to the chip with a thickness of 100~200 μm first with cutting equipment；
(2) chip is fixed on one piece of supporter with a kind of binder, wherein above support is the plate of rigidity；
(3) fixed chip on a support is ground on grinder；
(4) fixed chip on a support is processed by shot blasting；
(5) surface cleaning processing is carried out to the chip after polishing.
Wherein, surface cleaning processing includes successively clear using dewaxing cleaning agent, acetone, dehydrated alcohol, deionized water ultrasound
It washes, is then dried up sample using cold wind.
Wherein, the basic parameter of polishing treatment is as follows: pressure is 300 grams/cm, upper disk rotating speed 60rpm/min, under
Disk rotating speed 140rpm/min, polishing flow velocity are 70ml/min, and temperature is 25 DEG C, and polishing time is 2 hours.
Wherein, the polishing fluid of polishing treatment is composed of the following components: the partial size of 3wt% is 8nm silicon oxide particle, 25wt%
Partial size be 50nm silicon oxide particle, the partial size of 7wt% is 130nm silicon oxide particle, 0.1wt% surfactant, 1wt%
Sodium sulphate, sodium hydroxide, surplus is water.The pH of the polishing fluid is 9.9.
Wherein, surfactant is that acrylic acid-acrylic ester-co-polymer of sulfonate and betanaphthol polyoxyethylene ether press quality
It compounds and constitutes than 1:1.
Wherein, semiconductor material is sapphire.
Embodiment 2
A kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry, the ultraprecise semiconductor material
The preparation process of material includes the following steps:
(1) cutting semiconductor materials are gone out to the chip with a thickness of 100~200 μm first with cutting equipment；
(2) chip is fixed on one piece of supporter with a kind of binder, wherein above support is the plate of rigidity；
(3) fixed chip on a support is ground on grinder；
(4) fixed chip on a support is processed by shot blasting；
(5) surface cleaning processing is carried out to the chip after polishing.
Wherein, surface cleaning processing includes successively clear using dewaxing cleaning agent, acetone, dehydrated alcohol, deionized water ultrasound
It washes, is then dried up sample using cold wind.
Wherein, the basic parameter of polishing treatment is as follows: pressure is 300 grams/cm, upper disk rotating speed 60rpm/min, under
Disk rotating speed 140rpm/min, polishing flow velocity are 70ml/min, and temperature is 25 DEG C, and polishing time is 2 hours.
Wherein, the polishing fluid of polishing treatment is composed of the following components: the partial size of 2wt% is 6nm silicon oxide particle, 20wt%
Partial size be 30nm silicon oxide particle, the partial size of 6wt% is 120nm silicon oxide particle, 0.1wt% surfactant, 1wt%
Sodium sulphate, sodium hydroxide, surplus is water.The pH of the polishing fluid is 9.5.
Wherein, surfactant is that acrylic acid-acrylic ester-co-polymer of sulfonate and betanaphthol polyoxyethylene ether press quality
It compounds and constitutes than 1:1.
Wherein, semiconductor material is sapphire.
Embodiment 3
A kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry, the ultraprecise semiconductor material
The preparation process of material includes the following steps:
(1) cutting semiconductor materials are gone out to the chip with a thickness of 100~200 μm first with cutting equipment；
(2) chip is fixed on one piece of supporter with a kind of binder, wherein above support is the plate of rigidity；
(3) fixed chip on a support is ground on grinder；
(4) fixed chip on a support is processed by shot blasting；
(5) surface cleaning processing is carried out to the chip after polishing.
Wherein, surface cleaning processing includes successively clear using dewaxing cleaning agent, acetone, dehydrated alcohol, deionized water ultrasound
It washes, is then dried up sample using cold wind.
Wherein, the basic parameter of polishing treatment is as follows: pressure is 300 grams/cm, upper disk rotating speed 60rpm/min, under
Disk rotating speed 140rpm/min, polishing flow velocity are 70ml/min, and temperature is 25 DEG C, and polishing time is 2 hours.
Wherein, the polishing fluid of polishing treatment is composed of the following components: the partial size of 4wt% is 10nm silicon oxide particle,
The partial size of 30wt% is the silicon oxide particle of 80nm, and the partial size of 8wt% is 140nm silicon oxide particle, 0.1wt% surface-active
Agent, the sodium sulphate of 1wt%, sodium hydroxide, surplus are water.The pH of the polishing fluid is 9.5~10.5.
Wherein, surfactant is that acrylic acid-acrylic ester-co-polymer of sulfonate and betanaphthol polyoxyethylene ether press quality
It compounds and constitutes than 1:1.
Wherein, semiconductor material is sapphire.
Comparative example 1~5
Comparative example 1
The partial size that comparative example 1 is not added with 7wt% is 130nm silicon oxide particle, and surfactant is Sodium Polyacrylate, other
It is same as Example 1.
Comparative example 2
The partial size that comparative example 1 is not added with 7wt% is 130nm silicon oxide particle, but the partial size for adding 7wt% is 100nm
Silicon oxide particle, it is other same as Example 1.
Comparative example 3
The partial size that comparative example 3 is not added with 7wt% is 130nm silicon oxide particle, but the partial size for adding 7wt% is 160nm
Silicon oxide particle, it is other same as Example 1.
Comparative example 4
Surfactant is acrylic acid-acrylic ester-co-polymer of sulfonate in comparative example 4.
Comparative example 5
Surfactant is betanaphthol polyoxyethylene ether in comparative example 5.
Following table describes the component of large granular silicon dioxide and surfactant in embodiment 1-3 and comparative example 1-5 in detail
It constitutes.
In order to verify the removal rate and surface quality of embodiment 1-3 and comparative example 1-5, polishing front and back is measured with balance
Weight difference calculates removal rate, as a result as follows with atomic force microscope surface roughness Ra:
| Number | Removal rate μm/h | Surface roughness Ra (nm) |
| Embodiment 1 | 8.5 | 0.0543 |
| Embodiment 2 | 8.4 | 0.0536 |
| Embodiment 3 | 8.7 | 0.0551 |
| Comparative example 1 | 7.2 | 0.0672 |
| Comparative example 2 | 7.9 | 0.0726 |
| Comparative example 3 | 8.2 | 0.0765 |
| Comparative example 4 | 7.4 | 0.0618 |
| Comparative example 5 | 7.5 | 0.0614 |
The above results show (1) 2wt%~4wt% partial size be 6nm~10nm silicon oxide particle, 20wt%~
On the basis of the partial size of 30wt% is the silicon oxide particle of 30nm~80nm, the partial size for further adding 6wt%~8wt% is
Removal rate can be improved in 120nm~140nm silicon oxide particle, but can improve the degree of roughness on surface simultaneously；(2) compared to biography
The surfactant (such as polycarboxylate) of system, using acrylic acid-acrylic ester-co-polymer of sulfonate and betanaphthol polyoxyethylene
Ether mass ratio is that the surfactant of 1:1 can more promote the dispersion of polishing particles, further decreases surface roughness.(3) it adopts
It is 6nm~10nm silicon oxide particle with the partial size of 2wt%~4wt%, the partial size of 20wt%~30wt% is 30nm~80nm's
Silicon oxide particle, the partial size of 6wt%~8wt% are 120nm~140nm silicon oxide particle and acrylic acid-acrylic ester-sulfonate
Copolymer can both improve sapphire go with such combine of the surfactant that betanaphthol polyoxyethylene ether mass ratio is 1:1
Removal rates can reduce the degree of roughness of wafer surface again.(4) ultraprecise semiconductor material of the invention has lower coarse
Degree and higher processing quality, and can be avoided the risk of wafer breakage, it is adapted for epitaxial growth, can be widely applied to
The industries such as electronics, communication and the energy.
Claims (7)
1. a kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry, which is characterized in that including walking as follows
It is rapid:
(1) cutting semiconductor materials are gone out to the chip with a thickness of 100~200 μm first with cutting equipment；
(2) chip is fixed on one piece of supporter with a kind of binder；
(3) fixed chip on a support is ground on grinder；
(4) fixed chip on a support is processed by shot blasting；
(5) surface cleaning processing is carried out to the chip after polishing.
2. the preparation method of ultraprecise semiconductor material according to claim 1, which is characterized in that at the surface clean
Reason includes successively being cleaned by ultrasonic using dewaxing cleaning agent, acetone, dehydrated alcohol, deionized water, is then blown sample using cold wind
It is dry.
3. the preparation method of ultraprecise semiconductor material according to claim 1, which is characterized in that the polishing treatment
Basic parameter is as follows: pressure is 300 grams/cm, upper disk rotating speed 60rpm/min, lower disk rotating speed 140rpm/min, polishing fluid
Flow velocity is 70ml/min, and temperature is 25 DEG C, and polishing time is 2 hours.
4. the preparation method of ultraprecise semiconductor material according to claim 1, which is characterized in that the polishing treatment
Polishing fluid is composed of the following components: the partial size of 2wt%~4wt% is 6nm~10nm silicon oxide particle, 20wt%~30wt%'s
Partial size is the silicon oxide particle of 30nm~80nm, and the partial size of 6wt%~8wt% is 120nm~140nm silicon oxide particle,
0.1wt% surfactant, the sodium sulphate of 1wt%, sodium hydroxide, surplus are water, and the pH of the polishing fluid is 9.5~10.5.
5. the preparation method of ultraprecise semiconductor material according to claim 4, which is characterized in that the surfactant
Composition is compounded with betanaphthol polyoxyethylene ether 1:1 in mass ratio for acrylic acid-acrylic ester-co-polymer of sulfonate.
6. the preparation method of ultraprecise semiconductor material according to claim 1, which is characterized in that the semiconductor material
For sapphire.
7. the preparation method of ultraprecise semiconductor material according to claim 1, which is characterized in that above support is rigid
The plate of property.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113731932A (en) * | 2021-09-03 | 2021-12-03 | 广东先导微电子科技有限公司 | Wax melting method of indium phosphide wafer |
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