CN102627915A - Efficient alumina sapphire polishing solution and its preparation method - Google Patents
Efficient alumina sapphire polishing solution and its preparation method Download PDFInfo
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- CN102627915A CN102627915A CN2012100794257A CN201210079425A CN102627915A CN 102627915 A CN102627915 A CN 102627915A CN 2012100794257 A CN2012100794257 A CN 2012100794257A CN 201210079425 A CN201210079425 A CN 201210079425A CN 102627915 A CN102627915 A CN 102627915A
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- aluminum oxide
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- sapphire polishing
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Abstract
The invention relates to an efficient alumina sapphire polishing solution, which is characterized by: containing an alumina polishing abrasive material, a carboxyl-containing polymer dispersant, and at least one accelerator of an amino-containing polishing accelerator, a phosphono-containing polishing accelerator or a sulfonyl-containing polishing accelerator, and having pH ranging from 10-13. Specifically, the alumina has an alpha crystal structure and an average particle size of 0.02-3.00 micrometers. The polishing solution is prepared by dispersing the above components into water in order so as to form a suspending liquid, and finally adjusting the PH to 10-13. With a low subdamage layer, the polishing solution of the invention can substantially mitigate the pressure of subsequent precision polishing, thus being in favor of polishing cost reduction.
Description
Technical field
The present invention relates to a kind of high-efficiency aluminum oxide sapphire polishing liquid and preparation method thereof.
Background technology
Currently marketed sapphire precision sizing is mainly efficiently polished with oiliness or water-based diamond liquid on copper dish or resin copper dish; Do the polishing friction agent with silicon sol again; Under alkaline materials and parts; The water of silicon sol and silicon oxide and sapphire surface form pure aluminium silicate, under the help of mechanical force, hard sapphire are cut, polish.Copper dish, resin copper dish cost are high, repair the dish difficulty big, time-consuming, take a lot of work, efficient is low in the production process.The oiliness diamond liquid cost of this process using is high and be difficult to cleaning, and water-based diamond liquid effect does not have butyrous good.Adopt polycrystalline diamond liquid to do efficient sapphire polishing in addition, its advantage is to reduce surface disturbance, improve polishing efficiency, but cost is too high.
Summary of the invention
The object of the invention is to invent a kind of high-efficiency aluminum oxide sapphire polishing liquid that can recycle.This polishing fluid subdamage layer is low, alleviates the precise polished pressure in road, back greatly, helps reducing the polishing cost.
Technical scheme is:
The high-efficiency aluminum oxide sapphire polishing liquid; Include aluminum oxide polishing abrasive substance; Carbonyl bearing polymer dispersion agent and amino-contained polish accelerator, contain phosphonate group polishing accelerator or contain at least a accelerator in the sulfonic group polishing accelerator, and pH is in the 10-13 scope.
Aluminum oxide has the alpha-crystal structure, and median size is at the 0.02-3.00 micron.
Said alumina concentration is 0.5%wt-30%wt.
Said carbonyl bearing polymer dispersion agent comprises ROHM, polyacrylate, polymethyl acrylic acid, poly-methyl acrylate; Polymaleic acid, polymaleic acid salt, polymaleic acid, polymaleic acid salt; PEMULEN TR2, the acrylate multipolymer gathers aspartic acid, gathers at least a in the aspat.
Said carbonyl bearing polymer dispersant concentration is 0.1%wt-10%wt
Said carbonyl bearing polymer dispersant concentration is 0.2%wt-5%wt.
Said accelerator comprises EDTA; Amido phosphoric acid salt, hydroxyl phosphate, vinyl-amine based phosphates; The phosphoryl carboxylic acid multipolymer; Vinylformic acid-2-acrylic amide-2-methyl propane sulfonic acid multipolymer, vinylformic acid-propenoate-phosphonic acids-sulphonate tetrapolymer, at least a in ROHM-propenoate-sulphonate.
Another purpose of the present invention is to invent a kind of preparation method who prepares above-mentioned polishing fluid:
Earlier alumina particle is dispersed in the water, forms suspension-s, in suspension-s, add dispersion agent, accelerator more successively, the pH value with suspension-s is adjusted to 10～13 at last.
When wherein feeding intake, aluminum oxide, dispersion agent and accelerator weight account for 0.5%～30%, 0.2%～10%, 0.2%～5% of polishing fluid gross weight respectively, and pH is in 10～13 scopes.
The present invention's method is simple, reasonable, is easy to produce, and product stability is good.
Beneficial effect of the present invention: it realizes optimized polishing performance the specific conductivity of the present invention through suitable pH value control polishing fluid; Adopt reasonable raw material to improve rate of cutting through chemical enhancement method; Cooperate network and chemistry to strengthen the graduation efficient of polishing fluid, organically improve hydrodynamic performance.This product polishing efficiency is high, and stability is strong, should not produce the material surface deposition at polishing machine and polishing, and its unique fluid property should not be air-dry at sapphire surface after polishing, greatly reduces the burden of follow-up cleaning.
Embodiment
Below in conjunction with specific embodiment the present invention is explained further details.
Embodiment 1:
Take by weighing the about 1.0 microns Alpha-alumina in 250 gram particles footpath, add in the 750 gram water, stir under the room temperature, add 2 gram polymaleic aciies again.Continue to add the EDTA of 5 grams.With salt of wormwood pH is transferred to 10 at last.Made polishing fluid sample polishes on Logitech CDP single side polishing machine.Press down: 5psi, lower wall and load plate rotating speed 50RPM, polishing fluid flow velocity: 100ml/ minute.This polishing fluid polishing speed is 9.3 microns/hour.
Embodiment 2:
Take by weighing the about 0.6 micron Alpha-alumina in 250 gram particles footpath, add in the 750 gram water, stir under the room temperature, add 10 grams again and gather aspartic acid.Continue to add the EDTA of 10 grams.With potassium silicate pH is transferred to 12 at last.Made polishing fluid sample polishes on Logitech CDP single side polishing machine.Press down: 5psi, lower wall and load plate rotating speed 50RPM, polishing fluid flow velocity: 100ml/ minute.This polishing fluid polishing speed is 8.5 microns/hour.
Embodiment 3:
Take by weighing the about 1.0 microns Alpha-alumina in 250 gram particles footpath, add in the 750 gram water, stir under the room temperature, add 10 gram polymaleic aciies again.Continue to add the EDTA of 10 grams.With Pottasium Hydroxide pH is transferred to 13 at last.Made polishing fluid sample polishes on Logitech CDP single side polishing machine.Press down: 5psi, lower wall and load plate rotating speed 50RPM, polishing fluid flow velocity: 100ml/ minute.This polishing fluid polishing speed is 13.5 microns/hour.
Embodiment 4:
Take by weighing the about 0.8 micron Alpha-alumina in 250 gram particles footpath, add in the 750 gram water, stir under the room temperature, add 10 gram polymaleic aciies again.Continue to add the sodium laurylsulfonate of 10 grams.With Pottasium Hydroxide pH is transferred to 12 at last.Made polishing fluid sample polishes on Logitech CDP single side polishing machine.Press down: 5psi, lower wall and load plate rotating speed 50RPM, polishing fluid flow velocity: 100ml/ minute.This polishing fluid polishing speed is 11.1 microns/hour.
Embodiment 5:
Take by weighing the about 0.8 micron Alpha-alumina in 150 gram particles footpath, add in the 850 gram water, stir under the room temperature, add 10 gram polymethyl acrylic acid again.Continue to add the dodecyl Alendronate of 10 grams.With Pottasium Hydroxide pH is transferred to 12 at last.Made polishing fluid sample polishes on Logitech CDP single side polishing machine.Press down: 5psi, lower wall and load plate rotating speed 50RPM, polishing fluid flow velocity: 100ml/ minute.This polishing fluid polishing speed is 6.9 microns/hour.
Claims (9)
1. high-efficiency aluminum oxide sapphire polishing liquid; It is characterized in that: include aluminum oxide polishing abrasive substance; Carbonyl bearing polymer dispersion agent and amino-contained polish accelerator, contain phosphonate group polishing accelerator or contain at least a accelerator in the sulfonic group polishing accelerator, and pH is in the 10-13 scope.
2. according to the said high-efficiency aluminum oxide sapphire polishing liquid of claim 1, it is characterized in that: aluminum oxide has the alpha-crystal structure, and median size is at the 0.02-3.00 micron.
3. according to the said high-efficiency aluminum oxide sapphire polishing liquid of claim 1, it is characterized in that: said alumina concentration is 0.5%wt-30%wt.
4. according to the said high-efficiency aluminum oxide sapphire polishing liquid of claim 1, it is characterized in that: said carbonyl bearing polymer dispersion agent comprises ROHM, polyacrylate, polymethyl acrylic acid; Poly-methyl acrylate, polymaleic acid, polymaleic acid salt; Polymaleic acid, polymaleic acid salt, PEMULEN TR2; The acrylate multipolymer gathers aspartic acid, gathers at least a in the aspat.
5. according to the said high-efficiency aluminum oxide sapphire polishing liquid of claim 4, it is characterized in that: said carbonyl bearing polymer dispersant concentration is 0.1%wt-10%wt
6. according to the said high-efficiency aluminum oxide sapphire polishing liquid of claim 5, it is characterized in that: said carbonyl bearing polymer dispersant concentration is 0.2%wt-5%wt.
7. according to the said high-efficiency aluminum oxide sapphire polishing liquid of claim 1, it is characterized in that: said accelerator comprises EDTA, amido phosphoric acid salt; Hydroxyl phosphate; The vinyl-amine based phosphates, phosphoryl carboxylic acid multipolymer, vinylformic acid-2-acrylic amide-2-methyl propane sulfonic acid multipolymer; Vinylformic acid-propenoate-phosphonic acids-sulphonate tetrapolymer, at least a in ROHM-propenoate-sulphonate.
8. preparation method like arbitrary said high-efficiency aluminum oxide sapphire polishing liquid in the claim 1 to 7; It is characterized in that: earlier alumina particle is dispersed in the water; Form suspension-s, in suspension-s, add dispersion agent, accelerator more successively, the pH value with suspension-s is adjusted to 10～13 at last.
9. the preparation method of said according to Claim 8 high-efficiency aluminum oxide sapphire polishing liquid; It is characterized in that: when feeding intake; Aluminum oxide, dispersion agent and accelerator weight account for 0.5%～30%, 0.2%～10%, 0.2%～5% of polishing fluid gross weight respectively, and pH is in 10～13 scopes.
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Cited By (9)
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| CN104592898A (en) * | 2015-01-04 | 2015-05-06 | 江苏中晶科技有限公司 | High-performance sapphire grinding fluid and preparation method thereof |
| CN105950021A (en) * | 2016-07-19 | 2016-09-21 | 苏州溶煋新材料科技有限公司 | Aluminum oxide base polishing solution for sapphire substrate polishing and preparation method thereof |
| CN106057647A (en) * | 2016-07-07 | 2016-10-26 | 浙江水晶光电科技股份有限公司 | Sapphire processing method |
| JPWO2016043089A1 (en) * | 2014-09-16 | 2017-08-10 | 山口精研工業株式会社 | Abrasive composition for sapphire substrate |
| CN108034361A (en) * | 2017-12-21 | 2018-05-15 | 惠州市米特仑科技有限公司 | A kind of preparation method of acidic alumina polishing fluid |
| CN108239484A (en) * | 2016-12-23 | 2018-07-03 | 蓝思科技（长沙）有限公司 | A kind of sapphire polishing alumina polishing solution and preparation method thereof |
| CN108997940A (en) * | 2018-06-04 | 2018-12-14 | 上海映智研磨材料有限公司 | Chemical mechanical polishing liquid suitable for sapphire polishing |
| CN109760218A (en) * | 2019-02-18 | 2019-05-17 | 山东虎力机械有限公司 | A kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry |
| CN110577800A (en) * | 2019-09-12 | 2019-12-17 | 江苏吉星新材料有限公司 | sapphire polishing agent and preparation method thereof |
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| CN106057647A (en) * | 2016-07-07 | 2016-10-26 | 浙江水晶光电科技股份有限公司 | Sapphire processing method |
| CN105950021A (en) * | 2016-07-19 | 2016-09-21 | 苏州溶煋新材料科技有限公司 | Aluminum oxide base polishing solution for sapphire substrate polishing and preparation method thereof |
| CN108239484A (en) * | 2016-12-23 | 2018-07-03 | 蓝思科技（长沙）有限公司 | A kind of sapphire polishing alumina polishing solution and preparation method thereof |
| CN108239484B (en) * | 2016-12-23 | 2020-09-25 | 蓝思科技（长沙）有限公司 | Alumina polishing solution for sapphire polishing and preparation method thereof |
| CN108034361A (en) * | 2017-12-21 | 2018-05-15 | 惠州市米特仑科技有限公司 | A kind of preparation method of acidic alumina polishing fluid |
| CN108997940A (en) * | 2018-06-04 | 2018-12-14 | 上海映智研磨材料有限公司 | Chemical mechanical polishing liquid suitable for sapphire polishing |
| CN108997940B (en) * | 2018-06-04 | 2021-01-19 | 上海映智研磨材料有限公司 | Chemical mechanical polishing solution suitable for sapphire polishing |
| CN109760218A (en) * | 2019-02-18 | 2019-05-17 | 山东虎力机械有限公司 | A kind of preparation method for electronics, the ultraprecise semiconductor material of communications industry |
| CN110577800A (en) * | 2019-09-12 | 2019-12-17 | 江苏吉星新材料有限公司 | sapphire polishing agent and preparation method thereof |
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Application publication date: 20120808 |