CN104017501A - Ultrasonic atomization-type polishing solution suitable for TFT-LCD (Thin Film Transistor-Liquid Crystal Display) glass substrate - Google Patents
Ultrasonic atomization-type polishing solution suitable for TFT-LCD (Thin Film Transistor-Liquid Crystal Display) glass substrate Download PDFInfo
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- CN104017501A CN104017501A CN201410258142.8A CN201410258142A CN104017501A CN 104017501 A CN104017501 A CN 104017501A CN 201410258142 A CN201410258142 A CN 201410258142A CN 104017501 A CN104017501 A CN 104017501A
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Abstract
The invention relates to an ultrasonic atomization-type polishing solution suitable for a TFT-LCD (Thin Film Transistor-Liquid Crystal Display) glass substrate. The polishing solution comprises the following raw materials: cerium oxide, silica sol, deionized water, a pH regulator and a surfactant. A production method of the polishing solution comprises the following steps: firstly, dissolving 1 to 10 parts of cerium oxide in 25 to 30 parts of deionized water and adding 16 to 50 parts of silica sol in a stirring manner until floccules are not contained in the solution; then adding the pH regulator and the deionized water so as to regulate the pH of the solution to reach 10 to 12; and finally, adding 0.5 to 2 parts of surfactant, fully dissolving and carrying out ultrasonic dispersion for 10 to 30 minutes so as to obtain the polishing solution. The polishing solution is applied after being atomized. The polishing solution is simple to operate, small in consumption, high in polishing efficiency, good in smoothness of polished glass surface and free of pollution; a polisher is prevented from being damaged.
Description
Technical field
The present invention relates to machine polishing liquor technical field, especially relate to a kind of ultrasonic atomizatio type polishing fluid for TFT-LCD glass substrate.
Background technology
Dull and stereotyped lcd technology is one of the swiftest and the most violent high-technology field of 21 century development.Glass substrate only accounts for 6% left and right of TFT-LCD material cost proportion, but most important element is very huge to the performance impact of indicating meter, and the key indexs such as resolving power, transmittance, weight and the visual angle of indicating meter are all closely related with glass substrate.In the consumer IT product of use TFT-LCD plane technique of display, light, thin is two large main core element of competitions.In order to reach frivolous demand, generally adopt reduction thickness of glass substrate, to reach the object that reduces thickness and weight simultaneously.
The reduction process of TFT-LCD glass substrate mainly contains two kinds at present: one is chemical milling, and another kind is physical grinding.Chemical milling need be used strong acid, and cost is higher, reclaims if do not carry out effective and reasonable processing, very large to the harm of environment, and the more difficult control of thinning metacoxa surface quality, still needs follow-up polished finish.Due to TFT-LCD glass baseplate surface quality and requirement on machining accuracy high; thermostability is high; chemical resistance is good; surface and subsurface defect are few; suitable thermal expansivity; light-high-strengths etc., have proposed stern challenge to surperficial ultraprecise processing, and traditional hard crisp wafer body substrate ultraprecise complete processing cannot meet the large-scale production requirement of TFT-LCD glass baseplate surface.
Chemically machinery polished (chemical mechanical polishing, lower abbreviation CMP) be the best processing method that can take into account at present surfaceness and surface finish requirement and obtain not damaged surface, be widely used in the inter-level dielectric of semi-conductor industry, conductor, the surface working fields such as opticglass.CMP is the course of processing that obtains smooth-flat-surface by chemistry and mechanical force, utilize the slurry and the workpiece surface that are mixed by minute abrasive and chemical solution that serial chemical reaction occurs, generate the low shearing resistance product of easily removing, remove by mechanical effect again, realize the removal polishing of the small unit of nano level.Polishing fluid affects the ratio of chemical action and mechanical effect degree in CMP process, affects the temperature of polishing area, is determining to a great extent the obtainable glazed surface quality of CMP and polishing efficiency.
In traditional C MP process, need to use in a large number polishing fluid, not only make cost increase, and if without process reclaim directly enter physical environment, be unfavorable for again environmental protection.Understanding based on to traditional C MP technical deficiency and the both at home and abroad understanding to hard and fragile material surfacing Processing Technology Research present situation, creationaryly proposed ultrasonic finer atomization CMP method.The principle of ultrasonic atomizatio CMP is: the component of extraordinary polishing fluid is carried out to ultrasonic wave finer atomization, and forming Suo Taier diameter is the even micron order liquid grain of 5 ~ 15 μ m, under suction function, enters polishing interface by sealed tube.Worktable is around provided with plexiglass tent, therefore polishing spray film can not spread when polishing.Simultaneously, in this tightness system, part air is pulled out by production well, causes air pressure in seal closure lower than external pressure, makes polishing spray film can enter fast seal closure and be adsorbed on by force on polishing pad.Chemical substance in polishing spray film and glass generation chemical reaction shape, and by the mechanical grinding effect of abrasive particle in spray film, reactant is removed, under the alternating action of chemical reaction and mechanical grinding, form ultra-smooth precision surface.
Very rarely seen about the correlative study of TFT-LCD glass baseplate surface processing both at home and abroad at present.
Summary of the invention
The problems referred to above that exist for prior art, the applicant provides a kind of ultrasonic atomizatio type polishing fluid of the TFT-LCD of being applicable to glass substrate.This polishing fluid uses through atomization, simple to operate, and consumption is little, and polishing efficiency is high, and after polishing, glass surface planarization is good, and damage polish machine, not pollution-free.
Technical scheme of the present invention is as follows:
A ultrasonic atomizatio type polishing fluid that is applicable to TFT-LCD glass substrate, raw materials used and parts by weight are: 0.5 ~ 2 part of 1 ~ 10 part of cerium oxide, 16 ~ 50 parts of silicon sol, deionized water, pH adjusting agent, tensio-active agent.
Described ultrasonic atomizatio type polishing fluid makes according to following step:
(1) getting mass fraction is the cerium oxide of 1 ~ 10 part, adds 25 ~ 30 parts of deionized waters to mix and constantly stirs, until solution does not precipitate;
(2) in step (1) products therefrom, add 16 ~ 50 parts of silicon sol, stir while adding, until solution is without floss;
(3) in step (2) products therefrom, add pH adjusting agent and deionized water, regulator solution pH is 10 ~ 12;
(4) in step (3) products therefrom, add 0.5 ~ 2 part of tensio-active agent, make whole system quality umber reach 100 parts, continue to stir, tensio-active agent is fully dissolved, more ultrasonic dispersion 10 ~ 30 minutes, this polishing fluid obtained.
The particle diameter of described cerium oxide particle is 50 ~ 120nm, and in silicon sol, the particle diameter of silicon oxide is 15 ~ 20nm, and in silicon sol, the massfraction of silicon oxide is 30%.
Described pH adjusting agent is not metal ion and water-soluble amine organic bases, is specially at least one in trolamine that concentration is 99wt%, quadrol, hydroxyethylethylene diamine, thanomin.
Described tensio-active agent is nonionogenic tenside, is preferably polyvinylpyrrolidone.
Ultrasonic frequency in described ultrasonic dispersion process is 40 ~ 75kHz, and ultrasonic power is 20 ~ 900W.
The preparation method of described ultrasonic atomizatio type polishing fluid, its step (1) ~ (4) whole preparation process all at room temperature completes.
The technique effect that the present invention is useful is:
1, polishing fluid utilization ratio of the present invention is high, has reduced production cost, has reduced the pollution of polishing fluid waste liquid to environment simultaneously.
2, the material removing rate of polishing fluid polished glass substrate of the present invention is high, and after polishing, glass surface is without obvious cut, and surfaceness decreases before than polishing.
3, polishing fluid of the present invention is alkalescence, corrosion-free to equipment, easy cleaning.
Embodiment
Embodiment 1
In the cerium oxide that is 50nm to 12g particle diameter, add 90g deionized water, and constantly stir, until solution does not precipitate; The silicon sol (particle diameter of silicon oxide is 15 ~ 20nm) that is 30% to the massfraction that adds 50g silicon oxide in mixed solution again, stirs while adding; Add hydroxyethylethylene diamine and deionized water, constantly stirring also regulator solution pH is 11; Then add 4.5g polyvinylpyrrolidone, continue to stir, make it abundant dissolving, make solution reach 300g, more ultrasonic dispersion (frequency 40kHz, power 70W) 30 minutes.
Result of use: polishing fluid is poured in ultrasonic atomizer, carried out atomization polishing experiments, polishing 5min, then carry out the water throwing of 1min, with deionized water rinsing, dry after polishing.The clearance that records glass reaches 202nm/min, and surfaceness reaches 1.35nm.Under identical burnishing parameters, carry out traditional polishing experiments with this polishing fluid, record glass clearance and reach 312nm/min, surfaceness reaches 1.24nm, but polishing fluid consumption is 9 times of atomization polishing.
Embodiment 2
In the cerium oxide that is 50nm to 18g particle diameter, add 90g deionized water, and constantly stir, until solution does not precipitate; The silicon sol (particle diameter of silicon oxide is 15 ~ 20nm) that is 30% to the massfraction that adds 120g silicon oxide in mixed solution again, stirs while adding; Add quadrol and deionized water, constantly stirring also regulator solution pH is 11.5; Then add 4.5g polyvinylpyrrolidone, continue to stir, make it abundant dissolving, make solution reach 300g, more ultrasonic dispersion (frequency 40kHz, power 70W) 20 minutes.
Result of use: polishing fluid is poured in ultrasonic atomizer, carried out atomization polishing experiments, polishing 5min, then carry out the water throwing of 1min, with deionized water rinsing, dry after polishing.The clearance that records glass reaches 180nm/min, and surfaceness reaches 1.52nm.
Embodiment 3
In the cerium oxide that is 50nm to 8g particle diameter, add 60g deionized water, and constantly stir, until solution does not precipitate; The silicon sol (particle diameter of silicon oxide is 15 ~ 20nm) that is 30% to the massfraction that adds 100g silicon oxide in mixed solution again, stirs while adding; Add hydroxyethylethylene diamine and deionized water, constantly stirring also regulator solution pH is 10.5; Then add 2g polyvinylpyrrolidone, continue to stir, make it abundant dissolving, make solution reach 200g, more ultrasonic dispersion (frequency 40kHz, power 70W) 25 minutes.
Result of use: polishing fluid is poured in ultrasonic atomizer, carried out atomization polishing experiments, polishing 5min, then carry out the water throwing of 1min, with deionized water rinsing, dry after polishing.The clearance that records glass reaches 189nm/min, and surfaceness reaches 1.42nm.
Above-mentioned material removing rate calculation formula is:
Wherein, MRR is material removing rate (nm/min),
with
be respectively the quality (g) of the forward and backward glass of polishing, the density (g/cm that p is glass substrate
3), S
1for the area (cm of glass surface
2), t is polishing time (min).
Above-mentioned detailed description of the ultrasonic atomizatio type polishing fluid of TFT-LCD glass substrate being carried out with reference to embodiment; illustrative instead of determinate; can list several embodiment according to institute's limited range; therefore in the variation and the amendment that do not depart under general plotting of the present invention, within should belonging to protection scope of the present invention.
Claims (10)
1. be applicable to a ultrasonic atomizatio type polishing fluid for TFT-LCD glass substrate, it is characterized in that raw materials used and parts by weight are: 0.5 ~ 2 part of 1 ~ 10 part of cerium oxide, 16 ~ 50 parts of silicon sol, deionized water, pH adjusting agent, tensio-active agent.
2. a preparation method for ultrasonic atomizatio type polishing fluid claimed in claim 1, is characterized in that described ultrasonic atomizatio type polishing fluid makes according to following step:
(1) getting mass fraction is the cerium oxide of 1 ~ 10 part, adds 25 ~ 30 parts of deionized waters to mix and constantly stirs, until solution does not precipitate;
(2) in step (1) products therefrom, add 16 ~ 50 parts of silicon sol, stir while adding, until solution is without floss;
(3) in step (2) products therefrom, add pH adjusting agent and deionized water, regulator solution pH is 10 ~ 12;
(4) in step (3) products therefrom, add 0.5 ~ 2 part of tensio-active agent, make whole system quality umber reach 100 parts, continue to stir, tensio-active agent is fully dissolved, more ultrasonic dispersion 10 ~ 30 minutes, this polishing fluid obtained.
3. ultrasonic atomizatio type polishing fluid according to claim 1 and 2, the particle diameter that it is characterized in that described cerium oxide particle is 50 ~ 120nm, in described silicon sol, the particle diameter of silicon oxide is 15 ~ 20nm.
4. ultrasonic atomizatio type polishing fluid according to claim 1 and 2, is characterized in that the massfraction of silicon oxide in described silicon sol is 30%.
5. ultrasonic atomizatio type polishing fluid according to claim 1 and 2, is characterized in that described pH adjusting agent is not metal ion and water-soluble amine organic bases.
6. ultrasonic atomizatio type polishing fluid according to claim 1 and 2, is characterized in that described pH adjusting agent is that concentration is at least one in the trolamine, quadrol, hydroxyethylethylene diamine, thanomin of 99wt%.
7. ultrasonic atomizatio type polishing fluid according to claim 1 and 2, is characterized in that described tensio-active agent is nonionogenic tenside.
8. ultrasonic atomizatio type polishing fluid according to claim 1 and 2, is characterized in that described tensio-active agent is polyvinylpyrrolidone.
9. the preparation method of ultrasonic atomizatio type polishing fluid according to claim 1 and 2, is characterized in that the ultrasonic frequency in the ultrasonic dispersion process of step (4) is 40 ~ 75kHz, and ultrasonic power is 20 ~ 900W.
10. the preparation method of ultrasonic atomizatio type polishing fluid according to claim 1 and 2, is characterized in that step (1) ~ (4) whole preparation process all at room temperature completes.
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| CN106189873A (en) * | 2016-07-22 | 2016-12-07 | 清华大学 | A kind of polishing composition |
| CN107189694A (en) * | 2017-06-02 | 2017-09-22 | 合肥市惠科精密模具有限公司 | A kind of polishing fluid suitable for AMOLED glass substrates |
| CN107245301A (en) * | 2017-06-14 | 2017-10-13 | 合肥市惠科精密模具有限公司 | A kind of efficient polishing fluid for TFT LCD glass substrates |
| CN113980579A (en) * | 2021-11-15 | 2022-01-28 | 上海利客抛光材料有限公司 | Chemical mechanical polishing slurry and preparation method thereof |
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| CN104017501B (en) | 2015-09-30 |
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