CN106189873A - A kind of polishing composition - Google Patents
A kind of polishing composition Download PDFInfo
- Publication number
- CN106189873A CN106189873A CN201610584904.2A CN201610584904A CN106189873A CN 106189873 A CN106189873 A CN 106189873A CN 201610584904 A CN201610584904 A CN 201610584904A CN 106189873 A CN106189873 A CN 106189873A
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- CN
- China
- Prior art keywords
- compositions
- cerium oxide
- polishing
- silicon dioxide
- triazole
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
The present invention relates to a kind of polishing composition, belong to chemically mechanical polishing (CMP) field.Compositions of the present invention comprises cerium oxide powder, acid silicon dioxide sol, surface protection film forming agent, azole compounds and cerium oxide silicon dioxide bridging agent, deionized water；Each component proportion is: cerium oxide powder 5～30wt%；Acid silicon dioxide sol 0.1～5wt%；Cerium oxide silicon dioxide bridging agent 0.01～0.5wt%；Surface protection film forming agent 0.1～2wt%；Azole compounds 0.1～1wt%；Deionized water surplus.The present invention is to adapt to ultra-thin glass fast polishing under lower pressure, develops a kind of new polishing composition, can under low pressure be obviously improved glass polishing speed, it is thus achieved that the glass surface that roughness is lower.
Description
Technical field
The invention belongs to chemically-mechanicapolish polish (CMP) field, polish for ultra-thin glass lower pressure particularly to one
Polishing composition.
Background technology
Along with the trend development that the consumer electronics size such as cell phone, panel computer is increasing and lightening,
Requirement to thinning glass substrate will improve day by day.Consumer IT using TFT-LCD, OLED or other flat panel display technology is produced
In product, light, thin is two big essential core element of competitions.In order to reach frivolous demand, the glass substrate of commonly used reduction product
Thickness, to reach to reduce thickness and weight simultaneously, carrys out the corresponding market competition.Panel factory owner will be with the glass substrate of 0.5mm at present
Carrying out the manufacture of LCD module, the module thickness after completing is about 1.0mm, and the thickness after thinning is with 0.4～0.6mm as market
Main flow.Under high-quality and lightening demand, plate thickness need to be thinned to 0.4mm, 0.3mm, 0.2mm even 0.1mm.Industry
Interior enterprise the most constantly reduces the requirement of thickness of glass by facing, and on the other hand to have on the basis of ensureing certain qualification rate
Processing the technical strength of more sized rectangular glass substrate, needs are the most constantly promoted by the technical merit of enterprise inside the circle.Row at present
Time processing qualification rate is about 70% in the industry, faces huge cost pressure.
The thinning mode of display panels has physical grinding and a chemical etching two kinds, and physical grinding mode system uses to be contained
The polishing fluid of grounds travel, and by physical machine operating, hard abrasive directly contacted glass surface, and then cut into required
Thickness.But physical grinding mode production efficiency is poor, and along with glass substrate larger, its product yields is the most easily-controllable
System.Chemical etching mode system utilizes chemical principle, makes glass substrate be etched by chemical agent to reach thinning effect.Its
Middle chemical etching mode can be divided into the different processing procedure such as immersion type, spray-type and waterfall-type according to each manufacturer.Based on production efficiency
And consideration holistic cost, chemical etching mode is to produce the main way of thinning glass.
Chemical etching utilizes liquid solution and surfacing to carry out chemical reaction, application HF and silicon dioxide SiO2Occur anti-
And should make its principle dissolved, counter plate glass surface carries out stinging erosion and making plate thickness thinning, but owing to using HF, cost is relatively
Height, reclaims if not carrying out effective and reasonable process, then the harm to environment is very big, and the more difficult control of thinning metacoxal plate surface quality
System, still needs to follow-up polishing.
Chemically mechanical polishing (chemical mechanical polishing, lower abbreviation CMP) is to take into account table at present
Surface roughness and surface smoothness require and obtain the best process on not damaged surface, are widely used in semi-conductor industry
Inter-level dielectric, conductor, the Surface Machining field such as optical glass.CMP is to obtain adding of smooth surface by chemistry and mechanical force
Work process, utilizes the slurry mixed by minute abrasive and chemical solution to react with surface of the work generation sequence of chemical, generates
The low shear strength product easily removed, then removed by mechanism, it is achieved the removal polishing of the small unit of nanoscale.
Glass baseplate surface quality and requirement on machining accuracy are high, and heat stability is high, and chemical resistance is good, surface and inside
Defect is few, suitable thermal coefficient of expansion, light-high-strength etc..It is mainly used in removing preceding working procedure for polished glass substrate step
The damage caused, such as pit, cut, fluctuating, quickly realizes the surface that uniform ground is flawless, but Conventional polishing systems glass
Glass removal rate relatively low (less than 0.5 [mu), for the polishing of the glass baseplate surface for flat pannel display, should
System is the most not fully satisfactory.And use relatively large granule to form big cut and pit the most on the glass surface, make face
The optical performance degradation of plate, it addition, in feed-line and pulp storing tank, big granule often settles from water, thus
Cause manufacturing difficulty.In typical glass polishing system, the relatively high pressure down of greater than about 110 grams/cm must be used
Power obtains and useful removes speed, for the glass substrate of the relative thin used in LCD and OLED, this high under
Pressure adds breakage rate, proposes stern challenge, traditional hard crisp wafer body substrate superfinishing to the Ultra-precision Turning on surface
Close processing technique cannot meet the large-scale production requirement of glass baseplate surface.Relative to convention polishing methods, relatively low pressure down
Power decreases the glass breakage amount during polishing, in addition it is also necessary to develop new polishing system to realize quickly (micro-more than 0.5 m/min
Clock) the uniform target removed.
Summary of the invention
The present invention is to adapt to ultra-thin glass fast polishing under lower pressure, develops a kind of new polished glass substrate
Compositions, can under low pressure be obviously improved glass polishing speed, it is thus achieved that the glass surface that roughness is lower.
A kind of polishing composition, it holds to levy and is, described compositions comprises cerium oxide powder, acid silicon dioxide sol, table
Surface protective film forming agent, azole compounds and cerium oxide silicon dioxide bridging agent, deionized water；Each component proportion is:
Described compositions is applicable to ultra-thin glass polishing under lower pressure.
Described cerium oxide powder is D50 the mean diameter of 0.5 to 1.0 micron, and in cerium oxide powder, cerium-oxide contents is 75%
Above.
In described acid silicon dioxide sol, silica dioxide granule mean diameter is 10～70nm, the pH acid silicon less than 6
Colloidal sol.
Described cerium oxide silicon dioxide bridging agent is polysaccharide compound.
Described polysaccharide compound is starch, inulin, arabic gum, chitin or hyaluronic acid.
Described surface protection film forming agent is alkamine compound.
Described alkamine compound is 3-aminopropanol, DAP, 1-amino-2-propanol, 2-ammonia
Base-2-methyl isophthalic acid-propanol, 2-aminopropanol, one or more in 1-(dimethylamino)-2-propanol.
Described azole compounds is the ribavirin of nitrogenous azole compounds, triazole or tetrazole,.
Described ribavirin, triazole or tetrazole are 1,3-benzene a pair of horses going side by side ribavirin, 1,3-ribavirin, 1,2-ribavirin, 1-hydroxyl
Base BTA, 2-mercaptobenzimidazole, 1,2,4-triazole, 5-TTA, 1,2,3-triazole, 3-amino
Triazole-5-carboxylic acid, 3-amino-1,2,4-triazol, 5-carboxy benzotriazole, 5-methyl tetrazole, 5-phenyl tetrazole,
One or more in 5-aminotetrazole, 1-phenyl-5-mercapto tetrazole.
Compositions pH of the present invention is 4.5～10.5.
In the component of the present invention, in acid silicon dioxide sol, silicon dioxide gel can not sent out in the range of pH2～11
The stabilized chlorine Ludox that rubber is solidifying.
In the component of the present invention, cerium oxide silicon dioxide bridging agent is used to make cerium oxide particle and silica dioxide granule phase
In conjunction with, form more stable polishing particle, not only promote the suspension stability of cerium oxide, and add polishing particles accordingly at glass
The functioning efficiency on glass surface, improves polishing speed.
In ultra-thin glass polishing process, owing to surface stress is big, for reducing the accumulation of its stress in polishing process, send out
Surface protection film forming agent is now used can effectively to promote the yield rate in ultra-thin glass polishing process；Surface protection in the present invention
Film forming agent is alkamine compound, and its glass surface in polishing process forms absorption, at the hydroxyl increasing glass surface
Density, while making in polishing process stress distribution evenly, forms protecting film, reduces surface damage further and defect is produced
Raw；Cerium oxide is combined with silica abrasive by the present composition by cerium oxide silicon dioxide bridging agent, not only improves oxygen
Change cerium granule stability, and make polishing particles mechanism evenly, stably；Meanwhile, surface protection film forming agent and azole
The protective effect of compound be combined with each other, and realize especially ultra-thin glass is quick, the surface height finishing polish of noresidue.
Accompanying drawing explanation
Fig. 1 schemes for glass surface AFM after using the polishing of the embodiment of the present invention 3 polishing composition.
Fig. 2 is glass surface AFM figure rear after using the polishing of the embodiment of the present invention 4 polishing composition.
Fig. 3 schemes for glass surface AFM after using the polishing of comparative example 1 polishing composition.
Fig. 4 schemes for glass surface AFM after using the polishing of comparative example 2 polishing composition.
Detailed description of the invention
Below by embodiment and comparative example, the invention will be further elaborated, in any case certainly should not be construed as limit
The scope of the present invention processed.
The concrete each component added and edge polishing result are as in the attached table.Test with these polishing compositions, polishing
It is 400*500*0.2mm ultra-thin glass to picture.
In embodiment, glossing is as follows:
Buffing machine: PW-1000CE-BJJY precision single side polishing machine (manufacture of Changsha Yong Kai scientific equipment company limited)
Pressure: 100 grams/cm
Rotating speed: 50rpm
Polishing pad: polyurethane essence throws pad (good fortune Ji electronic manufacture)
Polishing fluid flow: 4L/ minute
Polishing time: 10 minutes
After polishing, sheet glass through over cleaning, be dried, with spotlight observe surface of polished scratch situation, with micrometer (essence
Spend ± 0.5 micron) thickness measuring calculates polishing speed, and the sheet glass after using different components polishing to throw carried out rough surface
Degree test, investigates its surface of polished precision.
The ultra-thin glass of indication of the present invention is the glass that thickness is less than 0.4mm, lower pressure be pressure be less than 110 grams/flat
Square centimetre.
Claims (10)
1. a polishing composition, it holds to levy and is, described compositions comprises cerium oxide powder, acid silicon dioxide sol, surface
Protecting film forming agent, azole compounds and cerium oxide silicon dioxide bridging agent, deionized water；Each component proportion is:
Described compositions is applicable to ultra-thin glass polishing under lower pressure.
Compositions the most according to claim 1, it is characterised in that described cerium oxide powder is that D50 is at 0.5 to 1.0 micron
Mean diameter, in cerium oxide powder, cerium-oxide contents is more than 75%.
Compositions the most according to claim 1, it is characterised in that silica dioxide granule in described acid silicon dioxide sol
Mean diameter is 10～70nm, the pH acidic silicasol less than 6.
In compositions the most according to claim 1, it is characterised in that described cerium oxide silicon dioxide bridging agent is polysaccharide
Compound.
Compositions the most according to claim 4, it is characterised in that described polysaccharide compound is starch, inulin, Arab
Glue, chitin or hyaluronic acid.
Compositions the most according to claim 1, it is characterised in that described surface protection film forming agent is alkamine chemical combination
Thing.
Compositions the most according to claim 6, it is characterised in that described alkamine compound is 3-aminopropanol, 1,
3-diaminourea-2-propanol, 1-amino-2-propanol, 2-amino-2-methyl-1-propanol, 2-aminopropanol, 1-(dimethylamino)-
One or more in 2-propanol.
Compositions the most according to claim 1, it is characterised in that described azole compounds is the two of nitrogenous azole compounds
Nitrogen azoles, triazole or tetrazole,.
Compositions the most according to claim 8, it is characterised in that described ribavirin, triazole or tetrazole are 1,3-benzene
A pair of horses going side by side ribavirin, 1,3-ribavirin, 1,2-ribavirin, 1-hydroxy benzo triazole, 2-mercaptobenzimidazole, 1,2,4-triazole,
5-TTA, 1,2,3-triazole, 3-amino triazole-5-carboxylic acid, 3-amino-1,2,4-triazol, 5-carboxyl
One in BTA, 5-methyl tetrazole, 5-phenyl tetrazole, 5-aminotetrazole, 1-phenyl-5-mercapto tetrazole
Or it is several.
This compositions the most according to claim 1, it is characterised in that described compositions pH is 4.5～10.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610584904.2A CN106189873A (en) | 2016-07-22 | 2016-07-22 | A kind of polishing composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610584904.2A CN106189873A (en) | 2016-07-22 | 2016-07-22 | A kind of polishing composition |
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| Publication Number | Publication Date |
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| CN106189873A true CN106189873A (en) | 2016-12-07 |
Family
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| CN201610584904.2A Pending CN106189873A (en) | 2016-07-22 | 2016-07-22 | A kind of polishing composition |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108774467A (en) * | 2018-06-29 | 2018-11-09 | 东莞市硕丰研磨科技有限公司 | Glass polishing composition |
| CN110964440A (en) * | 2018-09-28 | 2020-04-07 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing composition and method for polishing silicon dioxide over silicon nitride |
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| CN101208404A (en) * | 2005-04-28 | 2008-06-25 | 韩国泰科诺赛美材料株式会社 | Auto-stopping abrasive composition for polishing high step height oxide layer |
| CN101291778A (en) * | 2005-10-19 | 2008-10-22 | 日立化成工业株式会社 | Cerium oxide slurry, cerium oxide polishing slurry and method for polishing substrate using the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108774467A (en) * | 2018-06-29 | 2018-11-09 | 东莞市硕丰研磨科技有限公司 | Glass polishing composition |
| CN110964440A (en) * | 2018-09-28 | 2020-04-07 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing composition and method for polishing silicon dioxide over silicon nitride |
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Application publication date: 20161207 |
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