CN102212316A - Acidic nano polishing solution for chemical mechanical planarization of zinc oxide and application thereof - Google Patents
Acidic nano polishing solution for chemical mechanical planarization of zinc oxide and application thereof Download PDFInfo
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Abstract
The invention provides acidic nano polishing solution for chemical mechanical planarization of zinc oxide. The polishing solution consists of nano abrasives, a pH adjustor, a surfactant, a defoaming agent, a bactericide, an auxiliary cleaning agent and a solvent, wherein the nano abrasives may be titanium oxide, cerium oxide or silicon dioxide; the pH adjustor comprises inorganic acid which is HNO3 and organic acid which may be acetic acid, sulfonic acid or citric acid; the surfactant may be silicane plyethylene glycol ether, plyethylene glycol ether or dodecyl glycol ether; the defoaming agent is dimethyl polysiloxane; the bactericide is isomeric thiazolinone; the auxiliary cleaning agent is isopropyl alcohol; and the solvent is deionized water. The polishing solution has the advantages of high polishing speed, high selectivity on dielectric material (silicon dioxide), easy cleaning, no equipment corrosion, no environmental pollution and long storage time. When the polishing solution is used for the chemical mechanical planarization of zinc oxide film materials for preparing a resistive random access memory, the preparation method is simple and easily implemented and is completely compatible with the integrated circuit process.
Description
Technical field
The invention belongs to a kind of polishing fluid, relate to microelectronics subsidiary material and technology field, particularly relate to a kind of acidity nanometer polishing fluid and application that is used for the zinc oxide chemical-mechanical planarization.
Background technology
In recent years, because zinc oxide material has bigger bandwidth (3.37eV) and higher exciton bind energy, so zinc oxide is at deep UV (ultraviolet light) electron device, blue light emitting device, Laser Devices, piezoelectric transducer, surface acoustic wave device, non-volatile resistance-change memory device, doping zinc-oxide has had widely as fields such as transparency electrodes to be used, and its effect seems more and more important.Simultaneous oxidation zinc also is used as directly epitaxy GaN film in the above of substrate, perhaps as the epitaxy GaN film in the above of a buffer layer on sapphire and the SiC.But the method for existing various developing zinc oxides, zinc-oxide film such as growths such as sputter, pulsed laser deposition, low-pressure chemical vapor deposition, spray pyrolysis all has very big surfaceness and surface to contain needle pore defect, these all will have a strong impact on the growth of subsequent thin film, thereby badly influence the performance of entire device.Especially work as the technology node and enter after the 40nm,, thereby seriously restricted the manufacturing and the application of zinc-oxide film and related device thereof because the bigger roughness of zinc oxide surface that grows out has limited the realization of high-precision photoetching.So growing zinc oxide film must just can be applied in the actual device manufacturing and goes to reduce its surfaceness through flattening surface, below just to make non-volatile resistance-variable storing device with the zinc oxide with resistive characteristic be example, further specify the importance of polishing.
Along with microelectronics and computer technology rapid development, more and more urgent to the demand of jumbo nonvolatile storer.And based on quickflashing (flash) storer of floating gate structure because the unlimited problem such as attenuate of higher operating voltage, complicated circuit structure and floating gate structure has seriously restricted the further application of flash memory in every field.Particularly after entering 45nm, the technology node makes that the demand of seeking the alternative flash memory of novel storer is more urgent owing to can't further improve integration density.Arise at the historic moment in the various novel non-volatility memorizer that is based on the new theory novel material, and the resistance-type memory (being resistance-variable storing device) that utilizes electric current to send a telegraph the exploitation of resistance transition effect is exactly one of them.Resistance-variable storing device (Resistive Random Access Memory, RRAM) be a kind of novel non-volatility memorizer, it has that operating voltage is low, read or write speed is fast, the repeatable operation weather resistance is strong, storage density is high, data hold time is long, low in energy consumption, cost is low, and characteristics such as CMOS process compatible, is described as the strongest rival of non-volatility memorizer of future generation.The critical material of resistance-variable storing device is recordable Dyadic transition metal oxide film material, and the zinc oxide material that wherein has the resistive characteristic has been widely used in manufacturing fields such as laser diode, photodiode, thin film transistor, solar cell, liquid crystal display.And it also will have good application prospects in the resistance-variable storing device devices field.Resistance-variable storing device based on Zinc oxide film material is made the pattern structure that gordian technique is how to form the resistive material, and then forms storage unit.In conjunction with the widespread use of chemical-mechanical planarization in the device interconnection field, the resistance-variable storing device how to make based on zinc oxide by the chemical-mechanical planarization of zinc oxide becomes current research focus, and the chemical-mechanical planarization work of relevant zinc oxide also becomes one of the focus in this field.
At present, chemical-mechanical planarization (Chemical Mechanical Planarization, CMP) as unique a kind of technology that can realize overall planarization, become a kind of indispensable technology in the super large-scale integration technology, and be widely used in the middle of the deep-submicron multiple layer of copper interconnection system.ITRS (International Technology Roadmap for Semiconductors, ITRS) proposed in 2007, the research work of chemical-mechanical planarization that is used for the novel material of non-volatility memorizer is needed badly and is carried out, and the formation of deep groove structure and the removal of excess stock all need chemical-mechanical planarization to finish.
For improving constantly storage density, voltage, power consumption when reducing resistive require that characteristic dimension is contracted to nano level in the resistance-variable storing device device cell.In view of the technology below 0.25 micron in the semiconductor technology, material surface must carry out overall planarization by chemical-mechanical planarization, can utilize general photolithographic exposure technology to carry out the processing of submicron-scale.Secondly, by chemical-mechanical planarization, can improve the planeness of film, increase the contact area between interface, the interface that reduces between electrode and the resistive film is caught current density, and then improves the electrical characteristic and the fatigue resistance of resistive thin-film material, reduce defective simultaneously, the reliability of enhance device.And, compatible mutually in order to make the resistance-variable storing device device preparing process with CMOS technology, reduce cost of manufacture, need study this critical process of chemical-mechanical planarization of resistive material.The resistance-variable storing device device unit construction relates to the formation of nanostructure, comprises the formation of nanoporous, the chemical-mechanical planarization of nano-filled and excess stock.For forming interstitital texture, can only form device cell by the filling and the chemical-mechanical planarization of resistive material.
At present, about the document of the polishing of material oxidation zinc and patent all seldom.Zinc-oxide film is polished in the Makoto MINAKATA seminar proposition of northeastern Japan university with plasma body in the ECR system surface; What the H.Chen seminar of houston, u.s.a university proposed comes the surface of planarization zinc-oxide film with the gas plasma bundle.More than two kinds of methods be the same in essence, all be the surface of bombarding zinc-oxide film with ion, the deposition again by atom in the bombardment process makes the surface be tending towards planarization, can introduce the damage of film lattice but the effect of such planarization is limited.The D.A.Lucca seminar of the upright university of Oklahoma, United States mainly studied the influence of mechanical polishing to luminescent device, but polishing process can be introduced dislocation defects with pure mechanical process polishing embedded photoluminescent material zinc oxide; The chemical-mechanical planarization of zinc-oxide film has been studied by the Sushant Gupta seminar of Univ Florida USA, but main research of concentrating the processing parameter aspect, does not relate to the research of the component etc. of polishing fluid.And the component of polishing fluid has very large influence to the practicality and the surface of polished quality of polishing, and the component of therefore studying polishing fluid has not only determined the quality of polishing also to determine the efficient of polishing.Can predict carrying out of resistance-change memory material oxidation zinc film chemical machinery planarization and will provide possibility for the further high-performance of resistance-variable storing device device, low-cost development.Because the necessary overall planarization of Deep Submicron IC process materials, chemical-mechanical planarization research for the resistance-change memory thin-film material, to become the bottleneck technology of more high-performance resistance-variable storing device development of future generation, have only the height of having realized material surface smooth, just can carry out high-resolution photolithographic exposure and form the nanoscale features size, required voltage is lower when making the storage material resistive, power consumption is littler, volume-diminished, storage density increase, cost reduces.Therefore the research of RRAM resistive thin-film material not only has bigger scientific meaning, and has the huge commercial value of potential.
Summary of the invention
The objective of the invention is at above-mentioned technical Analysis, providing a kind of is used for the acidity nanometer polishing fluid of zinc oxide chemical-mechanical planarization and utilizes this polishing fluid that Zinc oxide film material is carried out the method that chemical-mechanical planarization prepares resistance-variable storing device, adopt this acidity nanometer polishing fluid, can realize the overall planarization of zinc oxide Dyadic transition metal oxide resistive thin-film material, satisfy the requirement of preparation high-performance resistance-variable storing device, have good application prospects.
Technical scheme of the present invention:
A kind of acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization, by nano-abrasive, pH regulator agent, tensio-active agent, defoamer, sterilant, help clean-out system and solvent composition, the content of each ingredients constitute polishing fluid total amount is respectively: nano-abrasive be 1.0wt%-30.0wt%, pH regulator agent add-on be make that acidity nanometer polishing fluid pH value is 6 ~ 4, tensio-active agent is that 0.01wt%-1.0wt%, defoamer are that 20-200ppm, sterilant are 10-50ppm, to help clean-out system be that 0.01wt%-0.1wt%, surplus are solvent.
Described nano-abrasive is the mixture of one or both arbitrary proportions in titanium oxide, cerium oxide and the silicon-dioxide, and wherein titanium oxide and cerium oxide are its water dispersion, and silicon-dioxide is colloidal solution; The median size of nano-abrasive is less than 200nm.
Described pH regulator agent is the compound sour pH regulator agent of being made up of agent of mineral acid pH regulator and the agent of organic acid pH regulator, and the volume ratio of agent of mineral acid pH regulator and the agent of organic acid pH regulator is 1:1 ~ 8; Mineral acid in the agent of mineral acid pH regulator is HNO
3, the organic acid in the agent of organic acid pH regulator is the mixture of one or both arbitrary proportions in acetic acid, sulfonic acid and the citric acid.
Described tensio-active agent is the mixture of one or both arbitrary proportions in the poly-diethyl alcohol ether of silane, poly-diethyl alcohol ether and the dodecyl glycol ether.
Described defoamer is a polydimethyl silane.
Described sterilant is the isomery thiazolinone.
The described clean-out system that helps is a Virahol.
Described solvent is a deionized water.
A kind of described application that is used for the acidity nanometer polishing fluid of zinc oxide chemical-mechanical planarization is used to prepare resistance-variable storing device, and step is as follows:
1) at substrate Si/SiO
2Last deposition bottom electrode deposits SiO on bottom electrode
2Medium layer is to SiO
2Medium layer carries out the perforate etching, and depositing zinc oxide resistive thin-film material is filled and covered all array holes then;
2), utilize acidity nanometer polishing fluid provided by the invention that unnecessary zinc oxide resistive thin-film material layer is removed and planarization by chemical-mechanical planarization;
3) make top electrode, and lead-in wire is made device.
Technical Analysis of the present invention:
Abrasive mainly acts on the mechanical friction when being CMP.The pH regulator agent mainly is the pH value of regulating polishing fluid, makes polishing fluid stable, helps the carrying out of CMP, and selects for use compound acid as the pH regulator agent, wherein mineral acid HNO
3Can strengthen the chemical action of polishing fluid, organic acid can be good at keeping the pH value stabilization of solution, guarantees that the consistent of chemical action stablize, thereby realizes the stable of polishing speed.The effect of tensio-active agent is to make the high stability of abrasive in the polishing fluid, be preferentially adsorbed on material surface in the CMP process, the chemical corrosion effect reduces, because it is little that recess is subjected to frictional force, thereby protruding place is bigger than recess polishing speed, has played and has improved polishing convex-concave selectivity, has strengthened and has just selected ratio, reduce surface tension, reduced surface damage.The adding of tensio-active agent causes foamy to produce usually in the polishing fluid, and unfavorable control with explained hereafter realizes low bubble or still polishing fluid by adding the minute quantity defoamer, is convenient to manipulate.Contain many organism in the polishing fluid, long-term storage forms mould easily, causes polishing fluid rotten, adds a small amount of sterilant in polishing fluid for this reason.Help the adding of clean-out system to help to reduce particulate absorption, reduce the cleaning cost in later stage.
Advantage of the present invention is: polishing speed height, easy cleaning, not etching apparatus, free from environmental pollution, the storage time is long.By adopting acidity nanometer polishing fluid provided by the invention, can realize the overall planarization of zinc oxide resistive thin-film material, the roughness RMS of surface of polished (5 μ m * 5 μ m) satisfies the requirement of preparation high-performance RRAM less than 1.0nm.Utilize this polishing fluid that Zinc oxide film material is carried out chemical-mechanical planarization and prepare resistance-variable storing device, method is simple, and compatible fully with integrated circuit technology.
Description of drawings
Fig. 1 is for to have the SiO of array hole
2Last depositing zinc oxide polishing structures of samples synoptic diagram.
Fig. 2 is to effect synoptic diagram behind the zinc oxide redundance CMP.
Fig. 3 is the resistance variation memory structure synoptic diagram.
Embodiment
Further illustrate substantive distinguishing features of the present invention and marked improvement by following examples.But the present invention only is confined to embodiment by no means.
Embodiment 1:
The preparation of acidity nanometer polishing fluid: the silicon dioxide colloid 20wt% that contains 10 ~ 30nm in the polishing fluid; Dodecyl glycol ether 0.2wt%; Polydimethyl silane 50ppm; Isomery thiazolinone 10ppm; Virahol 0.03wt%; HON
3, acetic acid (1:1) is the pH regulator agent, pH is 6, all the other are deionized water.During preparation above-mentioned raw materials is mixed direct computer experiment after the use magnetic stirrer stirs.
The realization of glossing: adopt the 6EC nSpire polishing machine of U.S. Strasbaugh, polishing pad is Rohm﹠amp; Haas IC1000, rubbing head rotating speed are that 35rpm and polishing disk rotating speed are 40rpm, polishing fluid flow velocity 100ml/min, and overdraft is 2psi.
The specimen preparation of polishing is as follows: 1) at substrate Si/SiO
2The bottom electrode W layer of last deposit thickness 100nm; 2) the medium layer SiO of deposit thickness 200nm on bottom electrode W layer
23) by photoetching process to SiO
2Layer etching, the array hole of formation 1000nm; 4) at the SiO that is with array hole
2Last depositing zinc oxide resistive thin-film material is filled and is covered all array holes.Fig. 1 is polishing structures of samples synoptic diagram.
Polishing effect test: have Dektak 150 contourgraphs to measure the thickness difference of the zinc-oxide film of polishing front and back, divided by the speed that polishing time just can obtain polishing, measure the surface topography and the roughness of polishing front and back zinc-oxide film with the atomic force microscope (AFM) of Agilent company.
Polishing effect: zinc oxide polishing speed 157.2nm/min, SiO
2Polishing speed 6nm/min, polishing front surface roughness RMS (5 μ m * 5 μ m) is 11.7nm, surface of polished roughness RMS (5 μ m * 5 μ m) is 0.7nm, ZnO/SiO
2Select than being 26.2:1.Fig. 2 is to structural representation behind the zinc oxide redundance CMP.
Embodiment 2:
The preparation of acidity nanometer polishing fluid: contain the silicon dioxide colloid 5wt% of 10 ~ 30nm in the polishing fluid, the titanium dioxide 4wt% of 40nm; Poly-diethyl alcohol ether 0.1wt%, dodecyl glycol ether 0.1wt%; Polydimethyl silane 50ppm; Isomery thiazolinone 10ppm; Virahol 0.03wt%; HNO
3, sulfonic acid (1:3) is the pH regulator agent, pH is 6.01, all the other are deionized water.During preparation above-mentioned raw materials is mixed direct computer experiment after the use magnetic stirrer stirs.
Glossing, polishing specimen preparation and polishing effect test are with embodiment 1.
Polishing effect: zinc oxide polishing speed 149.8nm/min, SiO
2Polishing speed 7nm/min, polishing front surface roughness RMS (5 μ m * 5 μ m) is 9.8nm, surface of polished roughness RMS (5 μ m * 5 μ m) is 0.3nm, ZnO/SiO
2Select than being 21.4:1.
Embodiment 3:
The preparation of acidity nanometer polishing fluid: contain the silicon dioxide colloid 5wt% of 10 ~ 30nm in the polishing fluid, the cerium dioxide 2wt% of 80nm; Poly-diethyl alcohol ether 0.3wt%; Polydimethyl silane 50ppm; Isomery thiazolinone 10ppm; Virahol 0.03wt%; HNO
3, acetic acid (1:1) is the pH regulator agent, pH is 5, all the other are deionized water.During preparation above-mentioned raw materials is mixed direct computer experiment after the use magnetic stirrer stirs.
Glossing, polishing specimen preparation and polishing effect test are with embodiment 1.
Polishing effect: zinc oxide polishing speed 123.8nm/min, SiO
2Polishing speed 5nm/min, polishing front surface roughness RMS (5 μ m * 5 μ m) is 16.3nm, surface of polished roughness RMS (5 μ m * 5 μ m) is 0.4nm, ZnO/SiO
2Select than being 24.7:1.
Embodiment 4:
The preparation of acidity nanometer polishing fluid: the cerium dioxide 5wt% that contains 80nm in the polishing fluid; Silane gathers diethyl alcohol ether 0.5wt%; Polydimethyl silane 50ppm; Isomery thiazolinone 10ppm; Virahol 0.03wt%; HNO
3, sulfonic acid (1:2) is the pH regulator agent, pH is 5.01, all the other are deionized water.During preparation above-mentioned raw materials is mixed direct computer experiment after the use magnetic stirrer stirs.
Glossing, polishing specimen preparation and polishing effect test are with embodiment 1.
Polishing effect: zinc oxide polishing speed 128.7nm/min, SiO
2Polishing speed 6nm/min, polishing front surface roughness RMS (5 μ m * 5 μ m) is 13.1nm, surface of polished roughness RMS (5 μ m * 5 μ m) is 0.3nm, ZnO/SiO
2Select than being 21.4:1.
Embodiment 5:
The preparation resistance-variable storing device, step is as follows:
1) at the Si/SiO of substrate flat-satin
2The thick bottom electrode W of last deposition 100nm, the thick SiO of deposition 200nm on bottom electrode
2Medium layer, the technology of utilizing reactive ion etching is to SiO
2Medium layer carries out the perforate etching, is carving the depositing zinc oxide resistive thin-film material on the array that sinks to the bottom in hole then, it is filled cover all array holes;
2) sample that has deposited zinc-oxide film is carried out chemical-mechanical planarization, utilize acidity nanometer polishing fluid provided by the invention that unnecessary zinc oxide resistive thin-film material layer is removed and planarization;
3) sample surfaces after polishing gets final product at the top electrode W of deposition one deck 100nm.
Fig. 3 is this resistance-change memory structural representation.
By adopting acidity nanometer polishing fluid provided by the invention, can realize the overall planarization of zinc oxide resistive thin-film material, the roughness RMS of surface of polished (5 μ m * 5 μ m) satisfies the requirement of preparation high-performance RRAM less than 1.0nm.Utilize this polishing fluid that Zinc oxide film material is carried out chemical-mechanical planarization and prepare resistance-variable storing device, method is simple, and compatible fully with integrated circuit technology.
Claims (9)
1. acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization, it is characterized in that: by nano-abrasive, pH regulator agent, tensio-active agent, defoamer, sterilant, help clean-out system and solvent composition, the content of each ingredients constitute polishing fluid total amount is respectively: nano-abrasive be 1.0wt%-30.0wt%, pH regulator agent add-on be make that acidity nanometer polishing fluid pH value is 6 ~ 4, tensio-active agent is that 0.01wt%-1.0wt%, defoamer are that 20-200ppm, sterilant are 10-50ppm, to help clean-out system be that 0.01wt%-0.1wt%, surplus are solvent.
2. according to the described acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization of claim 1, it is characterized in that: described nano-abrasive is the mixture of one or both arbitrary proportions in titanium oxide, cerium oxide and the silicon-dioxide, wherein titanium oxide and cerium oxide are its water dispersion, and silicon-dioxide is colloidal solution; The median size of nano-abrasive is less than 200nm.
3. according to the described acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization of claim 1, it is characterized in that: the compound sour pH regulator agent of described pH regulator agent for forming by agent of mineral acid pH regulator and the agent of organic acid pH regulator, the volume ratio of agent of mineral acid pH regulator and the agent of organic acid pH regulator is 1:1 ~ 8; Mineral acid in the agent of mineral acid pH regulator is HNO
3, the organic acid in the agent of organic acid pH regulator is the mixture of one or both arbitrary proportions in acetic acid, sulfonic acid and the citric acid.
4. according to the described acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization of claim 1, it is characterized in that: described tensio-active agent is the mixture of one or both arbitrary proportions in the poly-diethyl alcohol ether of silane, poly-diethyl alcohol ether and the dodecyl glycol ether.
5. according to the described acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization of claim 1, it is characterized in that: described defoamer is a polydimethyl silane.
6. according to the described acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization of claim 1, it is characterized in that: described sterilant is the isomery thiazolinone.
7. according to the described acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization of claim 1, it is characterized in that: the described clean-out system that helps is a Virahol.
8. according to the described acidity nanometer polishing fluid that is used for the zinc oxide chemical-mechanical planarization of claim 1, it is characterized in that: described solvent is a deionized water.
9. an application that is used for the acidity nanometer polishing fluid of zinc oxide chemical-mechanical planarization according to claim 1 is characterized in that being used to prepare resistance-variable storing device, and step is as follows:
1) at substrate Si/SiO
2Last deposition bottom electrode deposits SiO on bottom electrode
2Medium layer is to SiO
2Medium layer carries out the perforate etching, and depositing zinc oxide resistive thin-film material is filled and covered all array holes then;
2), utilize acidity nanometer polishing fluid provided by the invention that unnecessary zinc oxide resistive thin-film material layer is removed and planarization by chemical-mechanical planarization;
3) make top electrode, and lead-in wire is made device.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102408836A (en) * | 2011-10-20 | 2012-04-11 | 天津理工大学 | Nano polishing solution for titanium oxide film chemical mechanical planarization and application |
| CN102408835A (en) * | 2011-10-20 | 2012-04-11 | 天津理工大学 | Nano polishing solution for chemical mechanical planarization of nickel oxide film and application |
| CN104017501A (en) * | 2014-06-12 | 2014-09-03 | 江南大学 | Ultrasonic atomization-type polishing solution suitable for TFT-LCD (Thin Film Transistor-Liquid Crystal Display) glass substrate |
| CN108565337A (en) * | 2018-04-03 | 2018-09-21 | 集美大学 | The resistance-variable storing device preparation method of positioning plasma treatment is carried out with nanometer shielding layer |
| CN110938378A (en) * | 2019-10-23 | 2020-03-31 | 宁波日晟新材料有限公司 | Polishing solution for polishing oxygen surface of zinc oxide crystal and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648190A (en) * | 2004-12-22 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Nano polishing liquid for high dielectric material strontium barium titanate chemical-mechanical polish |
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2011
- 2011-05-10 CN CN2011101192467A patent/CN102212316A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648190A (en) * | 2004-12-22 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Nano polishing liquid for high dielectric material strontium barium titanate chemical-mechanical polish |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102408836A (en) * | 2011-10-20 | 2012-04-11 | 天津理工大学 | Nano polishing solution for titanium oxide film chemical mechanical planarization and application |
| CN102408835A (en) * | 2011-10-20 | 2012-04-11 | 天津理工大学 | Nano polishing solution for chemical mechanical planarization of nickel oxide film and application |
| CN104017501A (en) * | 2014-06-12 | 2014-09-03 | 江南大学 | Ultrasonic atomization-type polishing solution suitable for TFT-LCD (Thin Film Transistor-Liquid Crystal Display) glass substrate |
| CN108565337A (en) * | 2018-04-03 | 2018-09-21 | 集美大学 | The resistance-variable storing device preparation method of positioning plasma treatment is carried out with nanometer shielding layer |
| CN108565337B (en) * | 2018-04-03 | 2021-05-18 | 集美大学 | Method for preparing resistive random access memory by using nano shielding layer to perform positioning plasma processing |
| CN110938378A (en) * | 2019-10-23 | 2020-03-31 | 宁波日晟新材料有限公司 | Polishing solution for polishing oxygen surface of zinc oxide crystal and preparation method thereof |
| CN110938378B (en) * | 2019-10-23 | 2021-08-27 | 宁波日晟新材料有限公司 | Polishing solution for polishing oxygen surface of zinc oxide crystal and preparation method thereof |
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Application publication date: 20111012 |