CN101747844A - Chemically mechanical polishing solution and application thereof - Google Patents
Chemically mechanical polishing solution and application thereof Download PDFInfo
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- CN101747844A CN101747844A CN200910224684A CN200910224684A CN101747844A CN 101747844 A CN101747844 A CN 101747844A CN 200910224684 A CN200910224684 A CN 200910224684A CN 200910224684 A CN200910224684 A CN 200910224684A CN 101747844 A CN101747844 A CN 101747844A
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- mechanical polishing
- chemical mechanical
- polishing liquid
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
The invention discloses a chemically mechanical polishing solution and application thereof. The chemically mechanical polishing solution comprises star polymer containing pigment affinity group, ground granules, complexing agent, oxidant and water. By using the inventive polishing solution, flaws of copper billets can be reduced, partial and entire corrosion of the meal copper can be prevented, and the static corrosion velocity of copper at normal temperature and polishing temperature can be reduced under the condition of maintaining higher copper removal velocity.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid and application thereof.
Background technology
Development along with microelectronics, the very large scale integration chip integration has reached tens components and parts, characteristic dimension has entered nano level, and this just requires hundreds of procedure, especially multilayer wiring, substrate, medium in the microelectronic technique must pass through chemical-mechanical planarization.Very extensive integrated routing is just transformed to Cu by traditional Al.Compare with Al, it is low that Cu wiring has resistivity, deelectric transferred energy rate height, and RC is short time of lag, and the advantage of Cu wiring has made its substitute for Al become interconnected metal in the semiconductor fabrication.
But also copper material is not carried out plasma etching or wet etching effectively at present, so that the known technology that copper-connection fully forms in unicircuit, so the cmp method of copper is considered to the most effective processing method.The principle of work of the cmp method of copper generally is to remove copper a large amount of on the substrate surface with removing speed soon and efficiently earlier, and soft landing when soon near the blocking layer reduces removal speed and polishes remaining metallic copper and be parked in the blocking layer.At present, a series of chemical mechanical polishing slurry that is suitable for polishing Cu has appearred, as: the patent No. is US 6,616, and 717 disclose a kind of composition and method that is used for metal CMP; The patent No. is US 5,527, and 423 disclose a kind of chemical mechanical polishing slurry that is used for metal level; The patent No. is US 6,821, and 897 disclose a kind of method of using the copper CMP of polymer complexing agent; The patent No. is that CN 02114147.9 discloses a kind of polishing liquid used in copper chemical mechanical polishing technology; The patent No. is the used slurry of chemically machinery polished that CN 01818940.7 discloses copper; The patent No. is that CN 98120987.4 discloses a kind of CMP slurries manufacturing of copper and manufacture method that is used for unicircuit of being used for.But the above-mentioned polishing slurries that is used for copper uses the back substrate surface to have the residual of defective, scuffing, pickup and copper, or the depression of polishing back copper billet is excessive, or exist part or general corrosion and the copper static etch rate under normal temperature and polish temperature (as 50 ℃) in the polishing process than problems such as height.Therefore be necessary to develop the chemical mechanical polishing slurry that is used for copper that makes new advances.
Summary of the invention
Technical problem to be solved by this invention is to have overcome the existing chemical mechanical polishing liquid that is used for polish copper, easily cause the excessive removal of substrate surface scuffing, contamination and copper billet and produce depression and the higher defective of the static etch rate of copper under normal temperature and polish temperature, keeping higher copper to remove under the situation of speed and provide a kind of, reduce the depression of polishing back copper billet, prevent the part and the general corrosion of metallic copper, reduce the chemical mechanical polishing liquid and the application thereof of the static etch rate of copper under normal temperature and polish temperature.
Chemical mechanical polishing liquid of the present invention contains star-type polymer, abrasive grains, complexing agent, oxygenant and the water of pigment affinity groups.
Among the present invention, described pigment affinity groups is meant the group that contains one or more elements in aerobic, nitrogen and the sulphur, one or more that preferable is in hydroxyl, amino and the carboxyl; Described star-type polymer is meant that with symmetry centre in the molecule be the center, connects the polymkeric substance of three or three above molecular chains with the radiation form.The described kind that contains pigment affinity groups contained in the star-type polymer of pigment affinity groups can be one or more.
The described star-type polymer that contains the pigment affinity groups can be homopolymer or multipolymer.The polymerization single polymerization monomer that forms this polymkeric substance preferably comprises one or more in following: acrylic monomer, acrylic ester monomer, acrylamide monomers and oxyethane.What wherein, described acrylic monomer was preferable is vinylformic acid and/or methacrylic acid; Described acrylic ester monomer is preferable is in methyl acrylate, methyl methacrylate, ethyl propenoate, Jia Jibingxisuanyizhi, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate, Hydroxyethyl acrylate and the hydroxyethyl methylacrylate one or more; What described acrylamide monomers was preferable is acrylamide and/or Methacrylamide.
Preferably, the monomer that forms in the above-mentioned star-type polymer that contains the pigment affinity groups can also contain the polymerization single polymerization monomer that other do not contain the pigment affinity groups, as other vinyl monomers, and optimal ethylene, propylene, vinylbenzene or p-methylstyrene.Among the present invention, described vinyl monomer is meant the polymerization single polymerization monomer that contains vinyl units.
Among the present invention, the star-type polymer that preferably contains the pigment affinity groups is the star-like homopolymer of polyacrylic acid, the binary star copolymer of vinylbenzene and Hydroxyethyl acrylate, the binary star copolymer of p-methylstyrene and oxyethane, the binary star copolymer of vinylbenzene and oxyethane, the binary star copolymer of methyl methacrylate and oxyethane, the binary star copolymer of methyl acrylate and Hydroxyethyl acrylate, the binary star copolymer of vinylformic acid and Hydroxyethyl acrylate, and vinylformic acid, in the ternary star copolymer of butyl acrylate and acrylamide one or more.
Among the present invention, the number-average molecular weight of the described star polymer that contains the pigment affinity groups is preferable is 800-50000, and that better is 800-10000.The content of the described star polymer that contains the pigment affinity groups is preferable is mass percent 0.0001%～3%, and better is 0.001%～1%;
Wherein, described abrasive grains can be the conventional abrasive grains that uses in this area, preferably is selected from silicon-dioxide, cerium dioxide, titanium dioxide and the polymer abrasive grains of silicon-dioxide, aluminium coating of silicon-dioxide, aluminium sesquioxide, adulterated al such as polystyrene, the polymethylmethacrylate one or more.That the particle diameter of abrasive grains is preferable is 20～150nm, and that better is 30～120nm.What the content of described abrasive grains was preferable is mass percent 0.1～5%, and better is mass percent 0.1～3%.
Described oxygenant can be the conventional oxygenant that uses in this area, preferably is selected from hydrogen peroxide, urea peroxide, peroxyformic acid, Peracetic Acid, persulphate, percarbonate, Periodic acid, perchloric acid, high boric acid, potassium permanganate and the iron nitrate one or more; What described salt was preferable is sylvite, sodium salt or ammonium salt.What the content of described oxygenant was preferable is mass percent 0.05～10%, and better is mass percent 0.5～5%.
Described complexing agent can be the conventional complexing agent that uses in this area, preferably is selected from ammonia carboxylation compound and salt thereof, organic carboxyl acid and salt thereof, one or more in organic phospho acid and salt thereof and the polyamines; Described ammonia carboxylation compound is for containing the compound of amino and carboxyl simultaneously, one or more that preferable is in glycine, L-Ala, Xie Ansuan, leucine, proline(Pro), phenylalanine, tyrosine, tryptophane, Methionin, arginine, Histidine, Serine, aspartic acid, L-glutamic acid, l-asparagine, glutamine, nitrilotriacetic acid(NTA), ethylenediamine tetraacetic acid (EDTA), hexanaphthene tetraacethyl, diethylene triamine pentacetic acid (DTPA), triethylenetetramine hexaacetic acid and the ethylenediamine disuccinic acid; Described organic carboxyl acid is preferable is in acetic acid, oxalic acid, citric acid, tartrate, propanedioic acid, Succinic Acid, oxysuccinic acid, lactic acid, gallic acid and the sulphosalicylic acid one or more; What described organic phospho acid was preferable is 2-phosphonic acids butane-1,2, one or more in 4-tricarboxylic acid, Amino Trimethylene Phosphonic Acid, 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylene diamine tetra methylene phosphonic acid, diethylene triamine pentamethylene phosphonic, polyvalent alcohol phosphonic acid ester, 2-hydroxyethylidene diphosphonic acid guanidine-acetic acid, ethylene diamine tetra methylene phosphonic acid and the polyamino polyether base methylenephosphonic acid; Described polyamines is preferable is in diethylenetriamine, pentamethyl-diethylenetriamine, triethylene tetramine, tetraethylene pentamine and the polyethylene polyamine one or more.What described salt was preferable is sylvite, sodium salt and/or ammonium salt.What the content of described complexing agent was preferable is mass percent 0.01～10%, and better is mass percent 0.05～5%.
Can also contain the conventional corrosion inhibitor that uses in this area among the present invention, described corrosion inhibitor is preferable is in nitrogen azoles, imidazoles, thiazole, pyridine and the pyrimidines one or more; Described nitrogen azole compounds preferably is selected from one or more in following: benzotriazole, the 5-methyl isophthalic acid, 2, the 3-benzotriazole, the 5-carboxy benzotriazole, 1-hydroxyl-benzotriazole, 1,2, the 4-triazole, 3-amino-1,2, the 4-triazole, 4-amino-1,2, the 4-triazole, 3, the 5-diaminostilbene, 2, the 4-triazole, 5-carboxyl-3-amino-1,2, the 4-triazole, 3-amino-5-sulfydryl-1,2, the 4-triazole, 5-acetate-1H-tetrazole, 5-methyl tetrazole, 5-phenyl tetrazole, 5-amino-1H-tetrazole and 1-phenyl-5-sulfydryl-tetrazole; Described glyoxaline compound preferably is benzoglyoxaline and/or 2-mercaptobenzimidazole; Described thiazole compound preferably is selected from one or more in following: 2-dimercaptothiodiazole, 5-amino-2-mercapto phenyl formic-1,3,4-thiadiazoles and 2-sulfydryl-benzothiazole; Described pyridine compounds and their preferably is one or more in following: 2,3 diamino pyridine, 2-aminopyridine and 2-pyridine carboxylic acid; Described pyrimidines preferably is the 2-aminopyrimidine.What the content of described corrosion inhibitor was preferable is mass percent 0.005～5%, and better is mass percent 0.005～1%.
Wherein, the pH of described polishing fluid is 2～11, and preferable is 3～7.
In the polishing fluid of the present invention, can also contain other conventional additives of this area, as pH regulator agent, viscosity modifier, defoamer and sterilant etc.
Polishing fluid of the present invention is in the application that reduces in the static etch rate of copper under normal temperature and polish temperature.
Polishing fluid of the present invention can prepare as follows: other components except that oxygenant are mixed in proportion, and the pH regulator agent of using this area routine is (as KOH, ammoniacal liquor or HNO
3) being adjusted to needed pH value, oxidizer before using mixes and gets final product.
Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: polishing fluid of the present invention can be under the condition of the higher polishing speed of maintenance, significantly improve the sinking degree of polishing back copper billet, and the chip surface after the polishing does not have corrosion, and significantly reduces the static etch rate of copper under normal temperature and polish temperature.
Description of drawings
Fig. 1 polishes figuratum copper wafer for the polishing fluid with embodiment 54 and soaks back with the observed surface corrosion situation map of SEM.
Fig. 2 polishes figuratum copper wafer for the polishing fluid with comparative example 4 and soaks back with the observed surface corrosion situation map of SEM.
Embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.
Embodiment 1～49
Table 1 has provided the embodiment 1～49 of chemical mechanical polishing liquid of the present invention, by the prescription of giving in the table, other components except that oxygenant is mixed, and water is supplied mass percent to 100%.With KOH or HNO
3Be adjusted to needed pH value.Oxidizer before using mixes and gets final product.
Table 1 embodiment 1～49
Effect embodiment 1
Table 2 has provided contrast polishing fluid 1～3 and polishing fluid of the present invention 50～53, and by the prescription of giving in the table, water is supplied mass percent to 100%, other components except that oxygenant is mixed, with KOH or HNO
3Be adjusted to needed pH value.Oxidizer before using mixes and gets final product.
Table 2 contrast polishing fluid 1 and polishing fluid 50～53
Adopt contrast polishing fluid 1～3 and 50～53 pairs of empty sheet copper of polishing fluid of the present invention (Cu) wafer to polish, remove speed and see Table 3.
Polishing material: empty sheet copper wafer; Polishing condition: overdraft 3Psi, polishing disk and rubbing head rotating speed 70/80rpm, polishing pad PPG MX710, polishing fluid flow velocity 100ml/min, polishing machine platform are LogitechPM5 Polisher.
The removal speed of table 3 contrast polishing fluid 1～3 and 50～53 pairs of metallic coppers of polishing fluid
| Polishing fluid | The removal speed (A/min) of copper |
| Contrast 1 | ??13065 |
| Contrast 2 | ??9210 |
| Contrast 3 | ??14824 |
| ??50 | ??6187 |
| ??51 | ??4010 |
| ??52 | ??6728 |
| ??53 | ??3959 |
By table as seen, compare with the comparative example 1～3 who does not add star-type polymer, added the star-type polymer of different concns in the polishing fluid 50～53, this star-type polymer can suppress the removal speed of copper.
Effect embodiment 2
Table 4 has provided contrast polishing fluid 4 and polishing fluid of the present invention 54, by the prescription of giving in the table, other components except that oxygenant is mixed, and water is supplied mass percent to 100%, with KOH or HNO
3Be adjusted to needed pH value.Oxidizer before using mixes and gets final product.
Table 4 contrast polishing fluid 4 and polishing fluid 54
Adopt contrast polishing fluid 4 and polishing fluid of the present invention 54, empty sheet copper (Cu), tantalum (Ta), silicon-dioxide (Teos) wafer and figuratum copper wafer are polished.
Empty sheet polishing condition: copper wafer: overdraft 3Psi/1psi; Tantalum (Ta) and silicon-dioxide (Teos) wafer: overdraft 1psi, polishing disk and rubbing head rotating speed 70/80rpm, polishing pad PPG MX710, polishing fluid flow velocity 100ml/min, polishing machine platform are Logitech PM5 Polisher.
Figuratum copper wafer polishing processing condition: overdraft 3psi polishes figuratum copper wafer to the about 2000A of remaining copper, and then under 1psi residual copper is removed and crossed and threw 30 seconds.Measure the depression value of the copper billet of 80um*80um on the figuratum copper wafer with the XE-300P atomic force microscope.Polishing disk and rubbing head rotating speed 70/80rpm, polishing pad PPG MX710, polishing fluid flow velocity 100ml/min, polishing machine platform are Logitech PM5 Polisher.
Table 5
By table as seen, compare with the comparative example 4 who does not add star-type polymer, added star-type polymer among the embodiment 54, the removal speed of inhibition copper under low overdraft that this star-type polymer energy is more, help being reduced in the depression on the figuratum copper wafer, and under high pressure, can keep higher copper to remove speed, do not influence throughput.
Effect embodiment 3
Adopt the polishing fluid of comparative example 4 and embodiment 54, figuratum copper wafer is polished and soaks.
Polishing technological conditions: polishing disk and rubbing head rotating speed 70/80rpm, polishing pad PPG MX710, polishing fluid flow velocity 100ml/min, polishing machine platform are Logitech PM5 Polisher.Overdraft 3psi polishes figuratum copper wafer to the about 2000A of remaining copper, and then 1psi removes residual copper and cross and threw 30 seconds down.Copper wafer after the polishing was immersed in the polishing fluid after 30 minutes, takes out wafer surface is observed in the back with scanning electronic microscope (SEM) the corrosion situation of cleaning.
Show that by Fig. 1 in the polishing and the figuratum copper wafer after the immersion with polishing fluid of the present invention, copper line surface and edge do not have corrosion, and with in the copper wafer (see figure 2) after comparative example's 4 polishings, copper line surface and edge there is obvious corrosion phenomenon.
Effect embodiment 4
Adopt contrast polishing fluid 1～3 and polishing fluid of the present invention 50～53, the copper wafer is immersed in 50 ℃ of polishing fluids.Static etch rate sees Table 6
Table 6 contrast polishing fluid 1～3 and polishing fluid 50～53 are 50 ℃ of static etch rate to metallic copper
| Polishing fluid | Static etch rate in the time of 50 ℃ (A/min) |
| Contrast 1 | ??4433 |
| Contrast 2 | ??1053 |
| Contrast 3 | ??2527 |
| ??50 | ??254 |
| ??51 | ??117 |
| ??52 | ??320 |
| ??53 | ??52 |
By the table as seen, added star-type polymer after, greatly reduce the static etch rate of copper in the time of 50 ℃.
Effect embodiment 5
Table 7 has provided contrast polishing fluid 5～6 and polishing fluid of the present invention 55, by the prescription of giving in the table, other components except that oxygenant is mixed, and water is supplied mass percent to 100%, with KOH or HNO
3Be adjusted to needed pH value.Oxidizer before using mixes and gets final product.
Table 7
Adopt contrast polishing fluid 5～6 and polishing fluid of the present invention 55, the copper wafer is immersed in respectively in room temperature and the 50 ℃ of polishing fluids.Static etch rate sees Table 8
Table 6 contrast polishing fluid 5～6 and polishing fluid 55 are in room temperature and 50 ℃ of static etch rate to metallic copper
| Polishing fluid | Static etch rate during room temperature (A/min) | Static etch rate in the time of 50 ℃ (A/min) |
| Contrast 5 | ??37 | ??721 |
| Contrast 6 | ??10 | ??378 |
| ??55 | ??0 | ??0 |
By table as seen, can reduce the static etch rate of copper when room temperature though add conventional corrosion inhibitor, but the static etch rate under 50 ℃ is suppressed poor effect, and star-type polymer to the static etch rate of copper particularly under the high temperature inhibition ability of static etch rate be better than conventional corrosion inhibitor.
Claims (24)
1. chemical mechanical polishing liquid, it contains: the star-type polymer, abrasive grains, complexing agent, oxygenant and the water that contain the pigment affinity groups.
2. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described pigment affinity groups is one or more in hydroxyl, amino and the carboxyl.
3. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: form the described polymerization single polymerization monomer that contains the star-type polymer of pigment affinity groups and comprise in following one or more: acrylic monomer, acrylic ester monomer, acrylamide monomers and oxyethane.
4. chemical mechanical polishing liquid as claimed in claim 3 is characterized in that: described acrylic monomer is vinylformic acid and/or methacrylic acid; Described acrylic ester monomer is one or more in methyl acrylate, methyl methacrylate, ethyl propenoate, Jia Jibingxisuanyizhi, propyl acrylate, propyl methacrylate, butyl acrylate, butyl methacrylate, Hydroxyethyl acrylate and the hydroxyethyl methylacrylate; Described acrylamide monomers is acrylamide and/or Methacrylamide.
5. the chemical mechanical polishing liquid of stating as claim 3 is characterized in that: form the described monomer that contains the star-type polymer of pigment affinity groups and also comprise other vinyl monomers.
6. chemical mechanical polishing liquid as claimed in claim 5 is characterized in that: described other vinyl monomers are ethene, propylene, vinylbenzene or p-methylstyrene.
7. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that: the described star-type polymer of pigment affinity groups that contains is for being selected from the star-like homopolymer of polyacrylic acid, the binary star copolymer of vinylbenzene and Hydroxyethyl acrylate, the binary star copolymer of p-methylstyrene and oxyethane, the binary star copolymer of vinylbenzene and oxyethane, the binary star copolymer of methyl methacrylate and oxyethane, the binary star copolymer of methyl acrylate and Hydroxyethyl acrylate, the binary star copolymer of vinylformic acid and Hydroxyethyl acrylate, and vinylformic acid, in the ternary star copolymer of butyl acrylate and acrylamide one or more.
8. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the described number-average molecular weight that contains the star-type polymer of pigment affinity groups is 800-50000.
9. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the described content that contains the star-type polymer of pigment affinity groups is mass percent 0.0001～3%.
10. chemical mechanical polishing liquid as claimed in claim 9 is characterized in that: the described content that contains the star-type polymer of pigment affinity groups is mass percent 0.001～1%.
11. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described oxygenant is to be selected from hydrogen peroxide, urea peroxide, peroxyformic acid, Peracetic Acid, persulphate, percarbonate, Periodic acid, perchloric acid, high boric acid, potassium permanganate and the iron nitrate one or more.
12. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described oxygenant is mass percent 0.05～10%.
13. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described complexing agent is one or more in the following compound: ammonia carboxylation compound and salt thereof, organic carboxyl acid and salt thereof, organic phospho acid and salt thereof and polyamines.
14. chemical mechanical polishing liquid as claimed in claim 13 is characterized in that: described ammonia carboxylation compound is to be selected from glycine, L-Ala, Xie Ansuan, leucine, proline(Pro), phenylalanine, tyrosine, tryptophane, Methionin, arginine, Histidine, Serine, aspartic acid, L-glutamic acid, l-asparagine, glutamine, nitrilotriacetic acid(NTA), ethylenediamine tetraacetic acid (EDTA), hexanaphthene tetraacethyl, ethylenediamine disuccinic acid, diethylene triamine pentacetic acid (DTPA) and the triethylenetetramine hexaacetic acid one or more; Described organic carboxyl acid is to be selected from acetic acid, oxalic acid, citric acid, tartrate, propanedioic acid, Succinic Acid, oxysuccinic acid, lactic acid, gallic acid and the sulphosalicylic acid one or more; Described organic phospho acid is for being selected from 2-phosphonic acids butane-1,2, one or more in 4-tricarboxylic acid, Amino Trimethylene Phosphonic Acid, 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylene diamine tetra methylene phosphonic acid, diethylene triamine pentamethylene phosphonic, polyvalent alcohol phosphonic acid ester, 2-hydroxyethylidene diphosphonic acid guanidine-acetic acid, ethylene diamine tetra methylene phosphonic acid and the polyamino polyether base methylenephosphonic acid; Described polyamines is to be selected from diethylenetriamine, pentamethyl-diethylenetriamine, triethylene tetramine, tetraethylene pentamine and the polyethylene polyamine one or more; Described salt is sylvite, sodium salt and/or ammonium salt.
15. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described complexing agent is mass percent 0.01～10%.
16. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described abrasive grains is one or more in silicon-dioxide, cerium dioxide, titanium dioxide and the polymer abrasive grains of the silicon-dioxide that is selected from silicon-dioxide, aluminium sesquioxide, adulterated al, aluminium coating.
17. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described abrasive grains is mass percent 0.1～5%.
18. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the particle diameter of described abrasive grains is 20～150nm.
19. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described chemical mechanical polishing liquid also contains corrosion inhibitor.
20. chemical mechanical polishing liquid as claimed in claim 19 is characterized in that: described corrosion inhibitor is one or more in nitrogen azoles, imidazoles, thiazole, pyridine and the pyrimidines.
21. chemical mechanical polishing liquid as claimed in claim 21, it is characterized in that: described nitrogen azole compounds is selected from one or more in following: benzotriazole, the 5-methyl isophthalic acid, 2, the 3-benzotriazole, the 5-carboxy benzotriazole, 1-hydroxyl-benzotriazole, 1,2, the 4-triazole, 3-amino-1,2, the 4-triazole, 4-amino-1,2, the 4-triazole, 3, the 5-diaminostilbene, 2, the 4-triazole, 5-carboxyl-3-amino-1,2, the 4-triazole, 3-amino-5-sulfydryl-1,2, the 4-triazole, 5-acetate-1H-tetrazole, 5-methyl tetrazole, 5-phenyl tetrazole, 5-amino-1H-tetrazole and 1-phenyl-5-sulfydryl-tetrazole; Described glyoxaline compound is benzoglyoxaline and/or 2-mercaptobenzimidazole; Described thiazole compound is selected from one or more in following: 2-sulfydryl-benzothiazole, 2-dimercaptothiodiazole and 5-amino-2-mercapto phenyl formic-1,3,4-thiadiazoles; Described pyridine is selected from one or more in following: 2,3 diamino pyridine, 2-aminopyridine and 2-pyridine carboxylic acid; Described pyrimidine is the 2-aminopyrimidine.
22. chemical mechanical polishing liquid as claimed in claim 20 is characterized in that: the content of described corrosion inhibitor is mass percent 0.005～5%.
23. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the pH of described polishing fluid is 2～11.
24. as the application of each described chemical mechanical polishing liquid of claim 1～23 in the static corrosion that suppresses copper.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910224684.2A CN101747844B (en) | 2008-12-19 | 2009-11-20 | Chemically mechanical polishing solution and application thereof |
| PCT/CN2010/001848 WO2011060616A1 (en) | 2009-11-20 | 2010-11-18 | Chemical-mechanical polishing liquid and use thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810207471.4 | 2008-12-19 | ||
| CN200810207471 | 2008-12-19 | ||
| CN200910224684.2A CN101747844B (en) | 2008-12-19 | 2009-11-20 | Chemically mechanical polishing solution and application thereof |
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| CN101747844B CN101747844B (en) | 2014-04-16 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011060616A1 (en) * | 2009-11-20 | 2011-05-26 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid and use thereof |
| WO2011069345A1 (en) * | 2009-12-11 | 2011-06-16 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing slurry and use thereof |
| WO2011072492A1 (en) * | 2009-12-18 | 2011-06-23 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid |
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| CN107164764A (en) * | 2017-06-09 | 2017-09-15 | 大连理工大学 | A kind of environment protection chemical mechanical polishing method of copper |
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| CN112521864A (en) * | 2020-12-15 | 2021-03-19 | 绍兴自远磨具有限公司 | Chemical mechanical polishing solution for semiconductor silicon carbide chip |
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| WO2022143719A1 (en) * | 2020-12-30 | 2022-07-07 | 安集微电子科技（上海）股份有限公司 | Chemical-mechanical polishing solution and use method therefor |
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| WO2011069345A1 (en) * | 2009-12-11 | 2011-06-16 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing slurry and use thereof |
| WO2011072492A1 (en) * | 2009-12-18 | 2011-06-23 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid |
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| CN102477259A (en) * | 2010-11-30 | 2012-05-30 | 安集微电子（上海）有限公司 | Chemically mechanical polishing slurry |
| CN102477262A (en) * | 2010-11-30 | 2012-05-30 | 安集微电子（上海）有限公司 | Chemically mechanical polishing slurry |
| CN105885701A (en) * | 2016-04-28 | 2016-08-24 | 四川昊吉科技有限公司 | Alkalescent copper polishing solution |
| CN107164764A (en) * | 2017-06-09 | 2017-09-15 | 大连理工大学 | A kind of environment protection chemical mechanical polishing method of copper |
| WO2019006685A1 (en) * | 2017-07-04 | 2019-01-10 | 深圳市长宏泰科技有限公司 | Polishing agent, stainless steel component, and polishing treatment method therefor |
| CN110809613A (en) * | 2017-07-04 | 2020-02-18 | 深圳市长宏泰科技有限公司 | Polishing agent, stainless steel part and polishing treatment method thereof |
| CN111433311A (en) * | 2017-10-03 | 2020-07-17 | 日立化成株式会社 | Polishing liquid, polishing liquid set, polishing method, and defect suppression method |
| CN112521864A (en) * | 2020-12-15 | 2021-03-19 | 绍兴自远磨具有限公司 | Chemical mechanical polishing solution for semiconductor silicon carbide chip |
| WO2022143719A1 (en) * | 2020-12-30 | 2022-07-07 | 安集微电子科技（上海）股份有限公司 | Chemical-mechanical polishing solution and use method therefor |
| CN112981410A (en) * | 2021-02-19 | 2021-06-18 | 湖北觉辰工艺有限公司 | Method for polishing copper image surface |
| CN112981410B (en) * | 2021-02-19 | 2023-04-25 | 湖北觉辰工艺有限公司 | Method for polishing copper imaging surface |
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| WO2011060616A1 (en) | 2011-05-26 |
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Application publication date: 20100623 Assignee: Anji Microelectronics (Shanghai) Co., Ltd. Assignor: Anji Microelectronics (Shanghai) Co., Ltd. Contract record no.: 2015990000788 Denomination of invention: Chemically mechanical polishing solution and application thereof Granted publication date: 20140416 License type: Common License Record date: 20150906 |
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