WO2012051786A1 - Chemical-mechanical polishing slurry - Google Patents

Chemical-mechanical polishing slurry Download PDF

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Publication number
WO2012051786A1
WO2012051786A1 PCT/CN2011/001453 CN2011001453W WO2012051786A1 WO 2012051786 A1 WO2012051786 A1 WO 2012051786A1 CN 2011001453 W CN2011001453 W CN 2011001453W WO 2012051786 A1 WO2012051786 A1 WO 2012051786A1
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Prior art keywords
polishing liquid
liquid according
ether
acid
weight
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PCT/CN2011/001453
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French (fr)
Chinese (zh)
Inventor
宋伟红
姚颖
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安集微电子（上海）有限公司
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Publication of WO2012051786A1 publication Critical patent/WO2012051786A1/en

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a chemical mechanical polishing liquid.
  • the planarization of copper interconnects typically employs a three-step process, namely rough throwing of copper, soft landing, and polishing of the barrier layer.
  • the polishing of the barrier layer is a very critical step, because its purpose is to remove the barrier layer, clean all metal residues and organic residues on the surface, and stop the thickness required in the process to form a copper interconnect. This step determines the final Surface topography, reliability and electrical properties.
  • the key factors include surface contaminant particles, dishing, thickness distribution, polishing uniformity, surface cleanliness, and removal rate of low dielectric materials. The parameters have higher requirements.
  • the resistance values are distributed in different line widths, electromigration characteristics, breakdown voltage (VBD) distribution and time correlation.
  • Dielectric breakdown (TDDB) and the like are all more dependent on the polishing of the barrier layer.
  • the mechanical strength of low dielectric materials also requires a milder CMP process to protect the mechanical integrity of the dielectric layer.
  • the cost control of polishing consumables also requires a low polishing solution and a long life of the polishing pad, which are all blocking
  • the polishing of the layers presents a greater challenge. It can be said that there is no ideal and high quality barrier polishing, and further advancement of the technology node will not be possible.
  • the barrier layer is flattened. There are also different requirements. In today's polishing liquid market, there is not a single polishing solution that can solve all the problems, especially in the process of 45nm and below, the thickness of the barrier layer is thinner, the physical properties of the sealing material and the low dielectric material. Both make the formulation of the polishing liquid more sensitive to the change of polishing performance, especially the correction ability of surface defects, polishing uniformity and stability have almost strict requirements.
  • This patent provides a barrier polishing solution with high silica removal Rate and adjustable low dielectric material removal rate, low surface contaminants, no polishing pad residue on the polishing pad, and strong surface defect repair capability. And the cost is low and easy to use.
  • the technical problem to be solved by the present invention is to solve the problem that the removal of copper is sensitive to changes in hydrogen peroxide, the residual metal material on the polishing pad during polishing, and the removal rate of low dielectric material. Solve the problem of the ability to correct surface defects on the graphic circle.
  • the present invention provides a chemical mechanical polishing liquid comprising the following components:
  • An abrasive a combination of a metal corrosion inhibitor, a chelating agent, an oxidizing agent, an organic solvent.
  • the abrasive is silica sol, fumed silica.
  • the particle size is 20-200 nm, and the optimum is 30-120 nm.
  • the abrasive content is 1-30%, preferably 5-20%
  • the metal corrosion inhibitor combination comprises an azole compound, a water soluble polymer, a macromolecular organophosphine or an organic phosphate.
  • the azole compound is benzotriazole (BTA) and a derivative thereof
  • the ice-soluble polymer is polyacrylic acid and a salt thereof or a polyacrylic acid copolymer
  • the macromolecular organic phosphine is a polyaminopolyether group Phosphonic acid (PAPEMP) or organic phospholipids such as polyol phosphate (PAPE).
  • the concentration of BTA is in the range of 0.01-0.5%, preferably 0.1-0.2%, the concentration of the water-soluble polymer is 0.01-%, preferably 0.05-0.2%, macromolecular organophosphine or 3 ⁇ 4" machine phosphoric acid.
  • the fat content is from 0.01% to 1%, most preferably from 0.05% to 0.5%.
  • the chelating agent is a monocarboxylic acid or a polycarboxylic acid, or an organic phosphine.
  • organic phosphine is 2-phosphonic acid butyl hydrazine-1, 2, 4-tricarboxylic acid (PBTC A ), 2 -Hydroxyphosphonoacetic acid ( ⁇ ), hydroxyethylidene diphosphonic acid (HEDP ), ethylenediamine tetramethylene phosphonate pentasodium (EDTMP), aminotrimethylene phosphonic acid (ATMP), etc.
  • the amount of chelating agent added It is 0.01-1%, and the most preferable is 0.1-0.5%.
  • the organic solvent is an alcohol or ether organic solvent, preferably ethanol, propanol, ethylene glycol, propylene glycol, glycerin, diethylene glycol; ethylene glycol methyl ether, ethylene glycol ether, ethylene Alcohol butyl ether, propylene Alcohol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene glycol butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol butyl ether, dipropylene glycol methyl ether, dipropylene glycol ether, dipropylene glycol propyl ether Wait.
  • the organic solvent is added in an amount of 0.1 to 10%, preferably 1 to 5%.
  • the oxidant is peroxide or persulfide, hydrogen peroxide, sodium peroxide, potassium peroxide, benzoyl peroxide, sodium persulfate, potassium persulfate, ammonium persulfate, etc.
  • the chemical mechanical polishing liquid of the present invention further comprises: a bactericidal mold inhibitor such as a polyquaternium or the like.
  • the chemical mechanical polishing liquid of the present invention has a pH of 2 to 5, preferably 3-4.
  • the role of the abrasive is to remove the surface metal material and non-metal material that are reacted.
  • the role of the chelating agent is to thoroughly understand the residual metal species on the polished surface.
  • the role of the composite preservative is to protect the metal from corrosion, and the appropriate sensitivity to the oxidant, the metal in the protection recess is not quickly removed, and the surface defects in the future are repaired.
  • the role of the organic solvent is to change the adsorption performance of the polishing liquid on the wafer and the polishing pad, dissolve and remove organic residues and metal residue, prolong the life of the polishing pad, and improve polishing stability.
  • the invention can improve the removal rate of silica and low-k materials to a certain extent, and inhibit the removal of copper, improve the diffusion behavior of the polishing solution on the wafer and the polishing pad, and improve the polishing uniformity of different line width structures in the die. .
  • the invention has the beneficial effects that: the metal corrosion inhibitor combination is used to effectively protect the metal from corrosion during the polishing process, and the surface defects of the front process can be corrected to achieve the planarization effect, and the organic solvent is used to change the slurry and the polishing pad.
  • the adsorption behavior between the wafer and the wafer is used to reduce the ice level of the metal residue on the polishing pad, further improve the life of the polishing pad, and increase the productivity.
  • the organic solvent can also adjust the polishing selection ratio of different layers to a certain extent, which is more favorable to the process. Required thickness distribution and surface appearance.
  • Figure 1 shows the change of copper removal rate with hydrogen peroxide concentration under different metal corrosion inhibitor combinations.
  • Figure 2 shows the removal rate of silica as a function of organic solvent concentration.
  • Figure 3 shows the polishing rate of a low dielectric material as a function of the amount of organic solvent added.
  • FIG. 4 shows the change in metal removal rate with the amount of organic solvent added.
  • Polishing fluid flow lOOml/min
  • Static Corrosion Rate The freshly polished copper sheet was immersed in the slurry for 15 min, and the thickness of the film before and after the measurement was measured.
  • Butterfly-shaped depression BD 854 graphics wafer covered by TEOS, measuring the butterfly depression of 80um metal block
  • Polishing uniformity within the slice a butterfly-shaped depression of different line widths within a die.
  • Example 8 Silica PAA 0.3% fungicide 3.00
  • Example 10 Silica 0.3% fungicide. 5.00
  • the reference polishing solution is a commercially available barrier polishing solution.
  • SER static corrosion rate
  • Corrosion metal corrosion
  • TEOS silicon dioxide
  • BD1 low dielectric material (black diamond 1);
  • Ta barrier metal ruthenium; Pre. butterfly depression before barrier polishing; pos. : Butterfly-shaped depression after polishing of the barrier layer;
  • WIDNU - Polishing uniformity within a die.
  • the polishing liquid unique to this patent has more advantages than the comparative polishing liquid.
  • the combination of metal corrosion inhibitors can adjust the removal rate of metallic copper with the sensitivity of hydrogen peroxide to the process requirements, that is, it is not so sensitive that the process is difficult to control and cannot be too inert, resulting in The thickness distribution is not adjustable.
  • the addition of an organic solvent changes the adsorptive diffusion properties of the polishing solution on the wafer and the polishing pad. Thereby the removal rate of various film materials is changed. This in turn changes the polishing uniformity within the die.
  • the addition of organic solvent can improve the removal rate of dielectric materials including silicon dioxide (PETEOS) and low dielectric material (BD1) to a certain extent, and reduce the removal of metallic copper, which can better improve surface defects and enable surface morphology. Meet the process requirements.
  • PETEOS silicon dioxide
  • BD1 low dielectric material
  • the sensitivity of the milder metal to the oxidant can be obtained, making the thickness control of the metal easier to control online through process parameters and oxidant concentration.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

Disclosed is a chemical-mechanical polishing slurry for planarizing a barrier layer, at least comprising abrasive particles, a metal chelating agent, combined metal corrosion inhibitors, an organic solvent, and an oxidant. The polishing slurry has a high removal rate for a medium material and a low dielectric material, a good surface defect correction capability, and good stability, and can effectively alleviate the remaining of a metal compound on a polishing pad.

Description

一种化学机械抛光液  Chemical mechanical polishing liquid
技术领域 Technical field
本发明涉及一种化学机械抛光液。  The present invention relates to a chemical mechanical polishing liquid.
技术背景 technical background
铜互连的平坦化通常采用三步法，即铜的粗抛，软着陆和阻挡层的抛光。 而阻挡层的抛光是非常关键的步骤， 因为它的目的是去除钽阻挡层， 清理表 面所有金属残留和有机物残留等，并停止在工艺要求的厚度，形成铜互联线， 这一步决定着最终的表面形貌、 可靠性和电学特性。 随着 45nm技术的发展 以及新材料尤其是低介电材料的应用， 对包括表面污染物颗粒， 碟形凹陷， 厚度分布， 抛光均一性、表面洁净度以及低介电材料的去除速率等等关键参 数都有了更高的要求。特别是表面污染物控制、 电性能和可靠性方面， 其精 度和范围越来小， 越来越苛刻， 电阻值在不同线宽的分布， 电迁移特性， 击 穿电压（VBD) 分布以及时间相关介质击穿 （TDDB ) 等等都更加依赖于阻 挡层的抛光。 再者， 低介电材料的机械强度也要求 CMP工艺更加温和以保 护介质层的机械完整性，抛光耗材的成本控制也要求抛光液的低^ ¾本和抛光 垫的长寿命， 这些都对阻挡层的抛光提出了更大的挑战， 可以说没有理想和 高质量的阻挡层抛光， 技术节点的进一步推进将不可能实现。在阻挡层的抛 光过程中会出现金属腐蚀和介质材料侵蚀， 金属物质残留， 有机物质残留， 抛光均一性等问题， 因为各个芯片厂的制造工艺有不同的侧重点， 所以对阻 挡层的平坦化也有不同的要求， 现今的抛光液市场， 还没有一支抛光液能够 解决所有的问题， 尤其是对 45nm及以下制程中， 阻挡层的厚度更薄， 封盖 材料以及低介电材料的物性特点，都使得抛光液的配方对抛光性能的变化更 加敏感， 尤其是对表面缺陷的修正能力， 抛光均一性和稳定性等方面都有近 乎苛刻的要求。 本专利提供一种阻挡层抛光液， 具有较高的二氧化硅去除 速率和可调的低介电材料去除速率， 表面污染物较低， 抛光垫无金属物质残 留抛光液， 并具有较强的表面缺陷修补能力。 且成本低廉使用方便。 The planarization of copper interconnects typically employs a three-step process, namely rough throwing of copper, soft landing, and polishing of the barrier layer. The polishing of the barrier layer is a very critical step, because its purpose is to remove the barrier layer, clean all metal residues and organic residues on the surface, and stop the thickness required in the process to form a copper interconnect. This step determines the final Surface topography, reliability and electrical properties. With the development of 45nm technology and the application of new materials, especially low dielectric materials, the key factors include surface contaminant particles, dishing, thickness distribution, polishing uniformity, surface cleanliness, and removal rate of low dielectric materials. The parameters have higher requirements. Especially in terms of surface contaminant control, electrical performance and reliability, the accuracy and range are smaller and more demanding, the resistance values are distributed in different line widths, electromigration characteristics, breakdown voltage (VBD) distribution and time correlation. Dielectric breakdown (TDDB) and the like are all more dependent on the polishing of the barrier layer. Furthermore, the mechanical strength of low dielectric materials also requires a milder CMP process to protect the mechanical integrity of the dielectric layer. The cost control of polishing consumables also requires a low polishing solution and a long life of the polishing pad, which are all blocking The polishing of the layers presents a greater challenge. It can be said that there is no ideal and high quality barrier polishing, and further advancement of the technology node will not be possible. During the polishing process of the barrier layer, metal corrosion and dielectric material erosion, metal residue, organic material residue, polishing uniformity, etc. may occur. Because the manufacturing processes of the various chip factories have different focuses, the barrier layer is flattened. There are also different requirements. In today's polishing liquid market, there is not a single polishing solution that can solve all the problems, especially in the process of 45nm and below, the thickness of the barrier layer is thinner, the physical properties of the sealing material and the low dielectric material. Both make the formulation of the polishing liquid more sensitive to the change of polishing performance, especially the correction ability of surface defects, polishing uniformity and stability have almost strict requirements. This patent provides a barrier polishing solution with high silica removal Rate and adjustable low dielectric material removal rate, low surface contaminants, no polishing pad residue on the polishing pad, and strong surface defect repair capability. And the cost is low and easy to use.
发明概要 Summary of invention
本发明要解决的技术问题是： 解决铜的去除随双氧水变化敏感、抛光过 程中抛光垫上金属物质残留、提高低介电材料去除速率的问题。解决图形晶 圆上表面缺陷的校正能力的问题。  The technical problem to be solved by the present invention is to solve the problem that the removal of copper is sensitive to changes in hydrogen peroxide, the residual metal material on the polishing pad during polishing, and the removal rate of low dielectric material. Solve the problem of the ability to correct surface defects on the graphic circle.
本发明提供了一种化学机械抛光液， 包含以下组分：  The present invention provides a chemical mechanical polishing liquid comprising the following components:
—种磨料、 一种金属腐蚀抑制剂组合、 一种螯合剂、 一种氧化剂、 一种 有机溶剂。  An abrasive, a combination of a metal corrosion inhibitor, a chelating agent, an oxidizing agent, an organic solvent.
其中， 磨料是二氧化硅溶胶， 气相法二氧化硅。粒径为 20-200nm，最优 的是 30-120nm。 磨料含量为 1-30%， 较好的为 5-20%  Among them, the abrasive is silica sol, fumed silica. The particle size is 20-200 nm, and the optimum is 30-120 nm. The abrasive content is 1-30%, preferably 5-20%
金属腐蚀抑制剂组合包括一种唑类化合物， 一种水溶性聚合物， 一种大 分子有机膦或有机磷酸脂。其中， 唑类化合物为苯并三氮唑（BTA)及其衍生 物， 氷溶性聚合物为聚丙烯酸及其盐或聚丙烯酸共聚物， 所述的大分子有机 膦为多氨基多醚基亚甲基膦酸 （PAPEMP)或有机磷 脂例如多元醇磷酸酯 (PAPE)。 BTA的浓度范围为 0.01-0.5%, 最好的是 0.1-0.2%， 水溶性聚合 物的浓度为 0.01-ί%， 最好的是在 0.05-0.2%， 大分子有机膦或¾"机磷酸脂的 含量在 0.01%-1%， 最好的为 0.05-0.5%。  The metal corrosion inhibitor combination comprises an azole compound, a water soluble polymer, a macromolecular organophosphine or an organic phosphate. Wherein, the azole compound is benzotriazole (BTA) and a derivative thereof, the ice-soluble polymer is polyacrylic acid and a salt thereof or a polyacrylic acid copolymer, and the macromolecular organic phosphine is a polyaminopolyether group Phosphonic acid (PAPEMP) or organic phospholipids such as polyol phosphate (PAPE). The concentration of BTA is in the range of 0.01-0.5%, preferably 0.1-0.2%, the concentration of the water-soluble polymer is 0.01-%, preferably 0.05-0.2%, macromolecular organophosphine or 3⁄4" machine phosphoric acid. The fat content is from 0.01% to 1%, most preferably from 0.05% to 0.5%.
螯合剂为一元羧酸或多元羧酸， 或者有机膦。 例如 醋酸， 草酸， 丙二 酸， 柠檬酸， 酒石酸， 丁二酸， 己二酸等， 有机膦为， 2-膦酸基丁垸 -1 , 2， 4-三羧酸 ( PBTC A )， 2-羟基膦酰基乙酸 ( ΗΡΑΑ )，羟基亚乙基二膦酸 ( HEDP )， 乙二胺四甲叉膦酸五钠（EDTMP), 氨基三甲叉膦酸（ATMP), 等， 螯合剂 的添加量为 0.01-1%, 最佳的为 0.1-0.5%。  The chelating agent is a monocarboxylic acid or a polycarboxylic acid, or an organic phosphine. For example, acetic acid, oxalic acid, malonic acid, citric acid, tartaric acid, succinic acid, adipic acid, etc., organic phosphine is 2-phosphonic acid butyl hydrazine-1, 2, 4-tricarboxylic acid (PBTC A ), 2 -Hydroxyphosphonoacetic acid ( ΗΡΑΑ ), hydroxyethylidene diphosphonic acid ( HEDP ), ethylenediamine tetramethylene phosphonate pentasodium (EDTMP), aminotrimethylene phosphonic acid (ATMP), etc., the amount of chelating agent added It is 0.01-1%, and the most preferable is 0.1-0.5%.
其中，有机溶剂为醇类或醚类有机溶剂，较好的为乙醇、丙醇、乙二醇、 丙二醇、 丙三醇、 二乙二醇； 乙二醇甲醚、 乙二醇乙醚、 乙二醇丁醚、 丙二 醇甲醚， 丙二醇乙醚、 丙二醇丙醚、 丙二醇丁醚、 二乙二醇单甲醚、 二乙二 醇单乙醚、二乙二醇丁醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚等。 有机溶剂的添加量为 0.1-10%， 最好的是 1-5%。 Wherein, the organic solvent is an alcohol or ether organic solvent, preferably ethanol, propanol, ethylene glycol, propylene glycol, glycerin, diethylene glycol; ethylene glycol methyl ether, ethylene glycol ether, ethylene Alcohol butyl ether, propylene Alcohol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene glycol butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol butyl ether, dipropylene glycol methyl ether, dipropylene glycol ether, dipropylene glycol propyl ether Wait. The organic solvent is added in an amount of 0.1 to 10%, preferably 1 to 5%.
上述含量均为质量百分比含量。  The above contents are all by mass percentage.
其中，氧化剂为过氧化物或过硫化物，过氧化氢，过氧化钠，过氧化钾， 过氧化苯甲酰， 过硫酸钠， 过硫酸钾， 过硫酸铵等  Among them, the oxidant is peroxide or persulfide, hydrogen peroxide, sodium peroxide, potassium peroxide, benzoyl peroxide, sodium persulfate, potassium persulfate, ammonium persulfate, etc.
本发明的化学机械抛光液进一步包括： 杀菌防霉变剂， 如聚季铵盐等。 本发明的化学机械抛光液 pH值为 2-5， 较佳的为 3-4。  The chemical mechanical polishing liquid of the present invention further comprises: a bactericidal mold inhibitor such as a polyquaternium or the like. The chemical mechanical polishing liquid of the present invention has a pH of 2 to 5, preferably 3-4.
本发明中： 磨料的作用是去除反应掉的表面金属材料和非金属材料。螯 合剂的作用是彻底清楚抛光后表面的金属物质残留。复合防腐剂的作用是保 护金属不被腐蚀， 另外对氧化剂的合适的敏感程度， 保护凹陷处的金属不被 快速去除， 进而对前程的表面缺陷进行修补。有机溶剂的作用是改变抛光液 在晶片和抛光垫上的吸附性能， 溶解去除有机物残留和金属物质残留， 延长 抛光垫寿命， 提高抛光稳定性。 并能一定程度的提高二氧化硅和 low-k材料 的去餘速率，并抑制铜的去除，改善抛光液在晶片和抛光垫上面的扩散行为， 改善管芯内不同线宽结构的抛光均一性。 本发明的有益效果是,: 采用金属腐蚀抑制剂组合， 有效保护金属在抛光 过程中免受腐蚀， 并能校正前程的表面缺陷， 达到平坦化的效果， 采用有机 溶剂来改变浆料与抛光垫和晶片之间的吸附行为，来降低抛光垫上金属残留 物的氷平， 进一步提高抛光垫寿命， 提高产能， 此外有机溶剂也能一定程度 的调整对不同膜层的抛光选择比，更利于得到工艺要求的厚度分布和表面性 貌。  In the present invention: The role of the abrasive is to remove the surface metal material and non-metal material that are reacted. The role of the chelating agent is to thoroughly understand the residual metal species on the polished surface. The role of the composite preservative is to protect the metal from corrosion, and the appropriate sensitivity to the oxidant, the metal in the protection recess is not quickly removed, and the surface defects in the future are repaired. The role of the organic solvent is to change the adsorption performance of the polishing liquid on the wafer and the polishing pad, dissolve and remove organic residues and metal residue, prolong the life of the polishing pad, and improve polishing stability. It can improve the removal rate of silica and low-k materials to a certain extent, and inhibit the removal of copper, improve the diffusion behavior of the polishing solution on the wafer and the polishing pad, and improve the polishing uniformity of different line width structures in the die. . The invention has the beneficial effects that: the metal corrosion inhibitor combination is used to effectively protect the metal from corrosion during the polishing process, and the surface defects of the front process can be corrected to achieve the planarization effect, and the organic solvent is used to change the slurry and the polishing pad. The adsorption behavior between the wafer and the wafer is used to reduce the ice level of the metal residue on the polishing pad, further improve the life of the polishing pad, and increase the productivity. In addition, the organic solvent can also adjust the polishing selection ratio of different layers to a certain extent, which is more favorable to the process. Required thickness distribution and surface appearance.
附图说明 DRAWINGS
图 1 为不同金属腐蚀抑制剂组合下铜去除速率随双氧水浓度的变化情 图 2为二氧化硅的去除速率随有机溶剂浓度的变化情况。 Figure 1 shows the change of copper removal rate with hydrogen peroxide concentration under different metal corrosion inhibitor combinations. Figure 2 shows the removal rate of silica as a function of organic solvent concentration.
图 3为低介电材料的抛光速率随有机溶剂添加量的变化情况。  Figure 3 shows the polishing rate of a low dielectric material as a function of the amount of organic solvent added.
图 4为金属去除速率随有机溶剂添加量的变化。 发明内容  Figure 4 shows the change in metal removal rate with the amount of organic solvent added. Summary of the invention
下面通过具体实施方式来进一步阐述本发明的优势。  Advantages of the present invention are further illustrated by the following detailed description.
抛光条件：  Polishing conditions:
抛光垫： Fujibo pad  Polishing pad: Fujibo pad
抛光条件： 70/90rpm  Polishing conditions: 70/90 rpm
抛光液流量： lOOml/min  Polishing fluid flow: lOOml/min
静态腐蚀速率： 将新鲜抛光的铜片放入浆液中浸渍 15min， 测量前后的 膜层厚度。  Static Corrosion Rate: The freshly polished copper sheet was immersed in the slurry for 15 min, and the thickness of the film before and after the measurement was measured.
蝶形凹陷： 采甩 TEOS封盖的 BD 854图形晶圆， 测量 80um金属块的 蝶形凹陷  Butterfly-shaped depression: BD 854 graphics wafer covered by TEOS, measuring the butterfly depression of 80um metal block
切片内的抛光均一性： 为一个管芯内不同线宽的蝶形凹陷。  Polishing uniformity within the slice: a butterfly-shaped depression of different line widths within a die.
表 1、 实施例 1-11  Table 1, Example 1-11
有机 氧化 其它添 实施例 . 金属腐蚀抑制剂组合 螯合剂 . pH值 溶剂 剂 加剂  Organic Oxidation Other Additions . Metal Corrosion Inhibitor Combination Chelating Agent . pH Solvent Additive
An ji 阻挡层抛  An ji barrier throw
参比抛光 0. 3% 杀菌剂 3. 00 光液 （商业化） Reference polishing 0. 3% fungicide 3. 00 light liquid (commercialized)
液. Liquid.
10%  10%
0. 2% 0. 2%丙  0. 2% 0. 2% C
实施例 1 二氧化硅 0. 3% 杀菌剂 3. 00 Example 1 Silica 0. 3% Fungicide 3. 00
BTA 二酸  BTA diacid
lOOnm  lOOnm
10%  10%
0. 2 % 0. 0 ( 5% 0. 2%丙  0. 2 % 0. 0 ( 5% 0. 2% C
实施例 2 二氧化硅 0. 3% 杀菌剂 3. 00 Example 2 Silica 0. 3% Fungicide 3. 00
BTA PAA 二酸  BTA PAA diacid
100 10% 100 10%
0.2% 0.05% 0.1 % 0.2%丙  0.2% 0.05% 0.1% 0.2% C
实施例 3 二氧化硅 0.3% 杀菌剂 3.00 Example 3 Silica 0.3% fungicide 3.00
BTA PAA PAPEMP 二酸  BTA PAA PAPEMP diacid
lOOnm  lOOnm
10%  10%
0.2% 0.05% 0.1% 0.2%丙 2%二乙二  0.2% 0.05% 0.1% 0.2% C 2% diethylene
实施例 4 二氧化硅 0.3% 杀菌剂 3.00 Example 4 Silica 0.3% fungicide 3.00
BTA PAA PAPEMP 二酸 醇单乙醚  BTA PAA PAPEMP Diacid Alcohol Monoethyl Ether
lOOnm  lOOnm
10%  10%
0.2% 0.05% 0.1% 0.2%丙 5%乙二醇  0.2% 0.05% 0.1% 0.2% C 5% Ethylene Glycol
实施例 5 二氧化硅 0.3% 杀菌剂 3.00 Example 5 Silica 0.3% fungicide 3.00
BTA PAA PAPEMP 二酸 丁醚  BTA PAA PAPEMP diacid butyl ether
lOOnm  lOOnm
o o.  o o.
10% 0.1%  10% 0.1%
0.2% 0.1% 0.2%丁 2%乙二醇  0.2% 0.1% 0.2% D 2% ethylene glycol
实施例 6 二氧化硅 PAA 0.3% 杀菌剂 3.00 Example 6 Silica PAA 0.3% fungicide 3.00
BTA PAPE 二酸 甲醚  BTA PAPE diacid methyl ether
lOOnm 共聚物  lOOnm copolymer
10% 0.1%  10% 0.1%
0.2% 0.1% 0.2%柠 2%丙二醇  0.2% 0.1% 0.2% lemon 2% propylene glycol
实施例 7 二氧化硅 PAA 0.3% 杀菌剂 3.00 Example 7 Silica PAA 0.3% fungicide 3.00
BTA PAPE 檬酸 甲醚  BTA PAPE citric acid methyl ether
lOOnm 共聚物  lOOnm copolymer
10% 0.1%  10% 0.1%
0.2% 0.1 % 0.2% 2%二乙二  0.2% 0.1% 0.2% 2% diethylene
实施例 8 二氧化硅 PAA 0.3% 杀菌剂 3.00 Example 8 Silica PAA 0.3% fungicide 3.00
BTA PAPEMP PBTCA 醇甲醚  BTA PAPEMP PBTCA Alcohol Methyl Ether
lOOnm 共聚物  lOOnm copolymer
5% 0.1%  5% 0.1%
0.2% 0.1% 0.2%  0.2% 0.1% 0.2%
实施例 9 二氧化硅 PAA 5%乙二醇 0.3% 杀菌剂 3.00 Example 9 Silica PAA 5% Glycol 0.3% Fungicide 3.00
BTA PAPEMP PBTCA  BTA PAPEMP PBTCA
lOOnm 共聚物  lOOnm copolymer
30%  30%
0.5% 0.01% 0.01% ■ 0.1%酒 1%丙二醇  0.5% 0.01% 0.01% ■ 0.1% wine 1% propylene glycol
实施例 10 二氧化硅 0.3% 杀菌剂. 5.00 Example 10 Silica 0.3% fungicide. 5.00
BTA PAA PAPEMP 石酸 乙醚  BTA PAA PAPEMP Stone Acid Ether
20nm  20nm
1% ：  1% :
0.01% 1% 0.5%酒 .■ 10%乙二醇  0.01% 1% 0.5% wine .■ 10% ethylene glycol
¾施例 11 二氧化硅 . . 0.3% 杀菌剂 2.00  3⁄4 Example 11 Silica . . 0.3% Fungicide 2.00
BTA PAPEMP . 石酸. 丁醚  BTA PAPEMP . Stone acid. Butyl ether
200nm  200nm
注： 参比抛光液为 市售的阻挡层抛光液  Note: The reference polishing solution is a commercially available barrier polishing solution.
表 2、 实施例 1 11的实施效果数据 Table 2, implementation effect data of embodiment 1 11
os 抛光垫 Os polishing pad
TE0S BD1 Cu Ta Corrosion SER pre WIDNU TE0S BD1 Cu Ta Corrosion SER pre WIDNU
金属残留物 . Metal residue.
462 深绿色 对比'抛光液 655 343 490 419 No 1.5 455 500A 462 dark green contrast 'polishing liquid 655 343 490 419 No 1.5 455 500A
残留物 the remains
-260 浅绿色 实施例 1 723 352 202 406 No 1 320 -260 Light green Example 1 723 352 202 406 No 1 320
残留物 the remains
748 浅绿色 实例 2 715 328 495 415 No 1.2 752 748 light green example 2 715 328 495 415 No 1.2 752
残留物 the remains
210 浅绿色 实例 3 732 364 272 426 No 2 462 210 light green example 3 732 364 272 426 No 2 462
残留物 实例 4 971 620 235 495 No 1 366 180A the remains Example 4 971 620 235 495 No 1 366 180A
残留物 the remains
135 无金属 实例 5 895 608 246 502 No 1. 2 478 200A 135 Metal free Example 5 895 608 246 502 No 1. 2 478 200A
残留物 the remains
212 无明显 实例 6 867 635 276 496 no 1. 1 520 212 No obvious Example 6 867 635 276 496 no 1. 1 520
金属残留物 Metal residue
135 无明显金属 实例 7 906 598 236 486 No 1. 5 440 135 no visible metal Example 7 906 598 236 486 No 1. 5 440
残留物 the remains
327 无明显金属 实例 8 882 584 247 468 No 1. 2 653 327 No obvious metal Example 8 882 584 247 468 No 1. 2 653
残留物 the remains
50 无明显金属 实例 9 635 423 326 386 No 1 320 50 no visible metal Example 9 635 423 326 386 No 1 320
残留物 无明显金属 实例 10 1658 1024 284 825 No 1. 2 695 -240  Residue No significant metal Example 10 1658 1024 284 825 No 1. 2 695 -240
残留物 无明显金属 实例 11 362 255 223 375 No 1. 1 425 286  Residue No significant metal Example 11 362 255 223 375 No 1. 1 425 286
'残留物 'the remains
SER: 静态腐蚀速率； Corrosion: 金属腐蚀； TEOS: 二氧化硅； BD1 : 低介电材料 （黑钻 1 ); Ta: 阻挡 层金属钽； Pre. 阻挡层抛光前的蝶形凹陷； pos。： 阻挡层抛光后的蝶形凹陷； WIDNU: —个管芯内的抛光 均一性。 SER: static corrosion rate; Corrosion: metal corrosion; TEOS: silicon dioxide; BD1: low dielectric material (black diamond 1); Ta: barrier metal ruthenium; Pre. butterfly depression before barrier polishing; pos. : Butterfly-shaped depression after polishing of the barrier layer; WIDNU: - Polishing uniformity within a die.
从上述实施例中我们可以看出， 与对比抛光液， 本专利特有的抛光液具 有更多的优点。 As can be seen from the above examples, the polishing liquid unique to this patent has more advantages than the comparative polishing liquid.
从图 1可以看出， 采用金属腐蚀抑制剂组合， 能够将金属铜的去除速率 随双氧水变化的敏感程度调整到工艺要求的范围， 即不能太敏感以至于工艺 难以控制， 又不能过于惰性， 造成厚度分布不可调。  It can be seen from Fig. 1 that the combination of metal corrosion inhibitors can adjust the removal rate of metallic copper with the sensitivity of hydrogen peroxide to the process requirements, that is, it is not so sensitive that the process is difficult to control and cannot be too inert, resulting in The thickness distribution is not adjustable.
从图 2-4可以看出， 有机溶剂的加入， 改变了抛光液在晶片和抛光垫上 的吸附扩散性能。 从而改变了各种膜层材料的去除速率。进而改变管芯内的 抛光均一性。 加入有机溶剂， 能够一定程度上提高介质材料包括二氧化硅 (PETEOS ) 和低介电材料 （BD1 ) 的去除速率， 降低金属铜的去除， 这样 可以更好的改善表面缺陷， 使得表面形貌能够满足工艺要求。 采用本专利特有的金属腐蚀抑制剂组合，可以得到较为温和的金属对氧 化剂的敏感度，使得金属的厚度控制更容易通过工艺参数和氧化剂浓度在线 调控。也可以更好的修正软着陆阶段金属表面的蝶形凹陷。有机溶剂的加入 配合该金属腐蚀抑制剂组合大大改善了切片级的均一性，使得同一管芯内不 同线宽的表面凹陷的变化幅度降低到 200埃以下， 性能得到了很大的改善。 As can be seen from Figures 2-4, the addition of an organic solvent changes the adsorptive diffusion properties of the polishing solution on the wafer and the polishing pad. Thereby the removal rate of various film materials is changed. This in turn changes the polishing uniformity within the die. The addition of organic solvent can improve the removal rate of dielectric materials including silicon dioxide (PETEOS) and low dielectric material (BD1) to a certain extent, and reduce the removal of metallic copper, which can better improve surface defects and enable surface morphology. Meet the process requirements. Using the unique combination of metal corrosion inhibitors of this patent, the sensitivity of the milder metal to the oxidant can be obtained, making the thickness control of the metal easier to control online through process parameters and oxidant concentration. It is also possible to better correct the butterfly depression on the metal surface during the soft landing phase. The addition of the organic solvent in combination with the metal corrosion inhibitor combination greatly improves the uniformity of the slice level, so that the variation of the surface depression of different line widths in the same die is reduced to less than 200 angstroms, and the performance is greatly improved.

Claims

权利要求 Rights request
1、 一种用于阻挡层平坦化的化学机械抛光液， 包含：  1. A chemical mechanical polishing solution for flattening a barrier layer, comprising:
a) 一种磨料；  a) an abrasive;
b) 一种金属腐蚀抑制剂组合；  b) a metal corrosion inhibitor combination;
c) 一种螯合剂；  c) a chelating agent;
d) 一种有机溶剂；  d) an organic solvent;
e) 一种氧化剂。  e) An oxidant.
2、 如权利要求 1所述抛光液， 其特征在于， 所述磨料是二氧化硅溶胶。 2. The polishing liquid according to claim 1, wherein the abrasive is a silica sol.
3、如权利要求 1所述抛光液，其特征在于，所述磨料粒径为 20-200nm。 A polishing liquid according to claim 1, wherein said abrasive has a particle diameter of from 20 to 200 nm.
4、如权利要求 3所述抛光液，其特征在于，所述磨料粒径为 30-120nm。  The polishing liquid according to claim 3, wherein the abrasive has a particle diameter of 30 to 120 nm.
5、 如权利要求 1所述抛光液， 其特征在于， 所述磨料含量为 l-30wto/。。  The polishing liquid according to claim 1, wherein the abrasive content is from 1 to 30 wto/. .
6、 如权利要求 5所述抛光液， 其特征在于， 所述磨料含量为 5-20wt%。  The polishing liquid according to claim 5, wherein the abrasive content is 5 to 20% by weight.
7、 如权利要求 1所述抛光液， 其特征在于， 所述金属腐蚀抑制剂组合 包括一种唑类化合物， 一种水溶性聚合物和一种大分子有机膦或有机磷酸 酯。.  The polishing liquid according to claim 1, wherein said metal corrosion inhibitor combination comprises an azole compound, a water-soluble polymer and a macromolecular organic phosphine or organic phosphate. .
8、 如权利要求 7所述抛光液， 其特征在于， 所述唑类化合物为 BTA及 其衍生物， 述水溶性聚合物为聚丙烯酸及其盐或丙烯酸的井聚物， 所述的 大分子有机膦或有机磷酸酯为多氨基多醚基四亚甲基膦酸或多元醇磷酸酯。  8. The polishing liquid according to claim 7, wherein the azole compound is BTA and a derivative thereof, and the water-soluble polymer is a polyacrylic acid and a salt thereof or a well polymer of acrylic acid, the macro molecule The organophosphorus or organophosphate is a polyaminopolyether tetramethylenephosphonic acid or a polyol phosphate.
9、 如权利要求 8所述抛光液， 其特征在于， 所述唑类化合物的浓度为 0.01-0.5wt%, 所述水溶性聚合物的浓度为 0.01-lwt%， 所述大分子有机膦或 有机磷酸酯的含量为 0.01%-lwt%。  9. The polishing liquid according to claim 8, wherein the concentration of the azole compound is 0.01 to 0.5% by weight, and the concentration of the water-soluble polymer is 0.01 to 1% by weight, the macromolecular organic phosphine or The content of the organophosphate is from 0.01% to 1% by weight.
10、 如权利要求 9所述抛光液， 其特征在于， 所述唑类化合物的浓度为 0.1-0.2wt%,所述水溶性聚合物的浓度为 0.05-0.2wt%， 所述大分子有机膦或 有机磷酸酯的含量为 O.05-0.5wt%。  The polishing liquid according to claim 9, wherein the concentration of the azole compound is 0.1 to 0.2% by weight, and the concentration of the water-soluble polymer is 0.05 to 0.2% by weight, the macromolecular organophosphine. Or the content of the organic phosphate is from 0.05 to 0.5% by weight.
11、 如权利要求 1所述抛光液， 其特征在于， 所述螯合剂为有机酸。 The polishing liquid according to claim 1, wherein the chelating agent is an organic acid.
12、 如权利要求 11 所述抛光液， 其特征在于， 所述有机酸为一元或多 The polishing liquid according to claim 11, wherein the organic acid is one or more
13、 如权利要求 11 所述抛光液， 其特征在于， 所述一元或多元羧酸选 自草酸、 丙二酸、柠檬酸、 酒石酸、 丁二酸中的一种或多种， 所述有机膦选 自 PBTCA、 HPAA、 HEDP、 EDTMP和 ATMP中的一种或多种。 The polishing liquid according to claim 11, wherein the monobasic or polycarboxylic acid is one or more selected from the group consisting of oxalic acid, malonic acid, citric acid, tartaric acid, and succinic acid, and the organic phosphine. One or more selected from the group consisting of PBTCA, HPAA, HEDP, EDTMP, and ATMP.
14、 如权利要求 11所述抛光液， 其特征在于， 所述螯合剂的添加量为 0.01-lwt%。  The polishing liquid according to claim 11, wherein the chelating agent is added in an amount of from 0.01 to 1% by weight.
15、 如权利要求 14所述抛光液， 其特征在于， 所述螯合剂的添加量为 0.1-0.5wt%。  The polishing liquid according to claim 14, wherein the chelating agent is added in an amount of from 0.1 to 0.5% by weight.
16、 如权利要求 1所述抛光液， 其特征在于， 所述有机溶剂为醇类或醚 类有机溶剂。  The polishing liquid according to claim 1, wherein the organic solvent is an alcohol or an ether organic solvent.
17、 如权利要求 16所述抛光液， 其特征在于， 所述有机溶剂为选自乙 醇、丙醇、 乙二醇、丙二醇、丙三醇、二乙二醇； 乙二醇甲醚、 乙二醇乙醚、 乙二醇丁醚、 丙二醇甲醚， 丙二醇乙醚、 丙二醇丙醚、 丙二醇丁醚、 二乙二 醇单甲醚、 二乙二醇单乙醚、 二乙二醇丁醚、 二丙二醇甲醚、 二丙二醇乙醚 和二丙二醇丙醚中的一种或多种。  The polishing liquid according to claim 16, wherein the organic solvent is selected from the group consisting of ethanol, propanol, ethylene glycol, propylene glycol, glycerol, diethylene glycol; ethylene glycol methyl ether, ethylene glycol Alcohol ether, ethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol ethyl ether, propylene glycol propyl ether, propylene glycol butyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol butyl ether, dipropylene glycol methyl ether One or more of dipropylene glycol ethyl ether and dipropylene glycol propyl ether.
18、 如权利要求 1 所述抛光液， 其特征在于， 所述有机溶剂的含量为 0.1- 10wt%。  The polishing liquid according to claim 1, wherein the organic solvent is contained in an amount of from 0.1 to 10% by weight.
19、 如权利要求 18所述抛光液， 其特征在于， 所述有机溶剂的含量为 l-5wt  The polishing liquid according to claim 18, wherein the content of the organic solvent is l-5wt
20、 如权利要求 1所述抛光液， 其特征在于， 所述氧化剂为过氧化物和 /或过硫化物。  20. The polishing liquid according to claim 1, wherein the oxidizing agent is a peroxide and/or a persulfide.
21、 如权利要求 20所述抛光液， 其特征在于， 所述氧化剂选自过氧化 氢、 过氧化钠、 过氧化钾、 过氧化苯甲酰、 过硫酸钠、 过硫酸钾和过硫酸铵 中的一种或多种。  The polishing liquid according to claim 20, wherein the oxidizing agent is selected from the group consisting of hydrogen peroxide, sodium peroxide, potassium peroxide, benzoyl peroxide, sodium persulfate, potassium persulfate and ammonium persulfate. One or more.
22、 如权利要求 1所述抛光液， 其特征在于， 所述抛光液进一步包含聚 季铵盐。  The polishing liquid according to claim 1, wherein the polishing liquid further comprises a polyquaternary ammonium salt.
23、 如权利要求 1所述抛光液， 其特征在于， 所述抛光液 pH值为 2-5。 The polishing liquid according to claim 1, wherein the polishing liquid has a pH of from 2 to 5.
24、如权利要求 23所述抛光液，其特征在于，所述抛光液 pH值为 3-4。 A polishing liquid according to claim 23, wherein said polishing liquid has a pH of 3-4.
PCT/CN2011/001453 2010-10-22 2011-08-29 Chemical-mechanical polishing slurry WO2012051786A1 (en)

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