CN101451044A - Chemico-mechanical polishing liquid - Google Patents
Chemico-mechanical polishing liquid Download PDFInfo
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- CN101451044A CN101451044A CNA2007101716023A CN200710171602A CN101451044A CN 101451044 A CN101451044 A CN 101451044A CN A2007101716023 A CNA2007101716023 A CN A2007101716023A CN 200710171602 A CN200710171602 A CN 200710171602A CN 101451044 A CN101451044 A CN 101451044A
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Abstract
The present invention discloses a chemical and mechanical polishing liquid, which comprises grinding particles and water. The polishing liquid also comprises one or more of the following components: organic phosphonic acid, polycarboxylic acid compounds, low-grade alkyl ethanol and carbohydrate. The growth rate of the particle size of the grinding particles along with the extension of time in the polishing liquid is low. The chemical and mechanical polishing liquid has the advantages of higher stability and longer storing time and service life.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
Chemically machinery polished in semi-conductor industry (CMP) field, the chemical mechanical polishing liquid of use are mainly divided acid and two kinds of alkaline slurry.Wherein, alkaline slurry stable relatively good do not have suitable oxygenant but exist, and easily causes surperficial cloud point and the slight problem that scratches in polishing process.Acid slurry has shown certain advantage in this respect.But the size of abrasive grain can be grown up under the effect of chemical composition in slurry gradually along with the prolongation of storage time in the acid slurry.After particle diameter is greater than 120 nanometers, phenomenons such as sedimentation layering can appear, and have a strong impact on quality of finish, even cause product failure.So growing up of control abrasive particle, increasing the service life is one of difficult point of acid slurry research and development.
Chemical mechanical polishing liquid all contains abrasive grains, and most of super powder of nano silicon or colloidal sol of adopting is as abrasive grain.Stability about silicon dioxide gel has a lot of bibliographical informations.But about suppressing the abrasive grain particle size growth, the document that prolongs chemical mechanical polishing liquid stability yet there are no report in the CMP field.
Summary of the invention
Technical problem to be solved by this invention is in order to overcome the problem of the storage stability of acidic chemical machine polishing liquor in the prior art, and a kind of chemical mechanical polishing liquid with higher stability is provided.
Chemical mechanical polishing liquid of the present invention contains abrasive grains and water, and it also contains in the following compositions one or more: organic phospho acid, polycarboxylic acid compound, the pure and mild saccharide compound of lower aliphatic.
Wherein, described organic phospho acid is preferable is selected from hydroxy ethylene diphosphonic acid (HEDP), Amino Trimethylene Phosphonic Acid (ATMP), ethylenediamine tetramethylene phosphonic acid, diethylenetriamine pentamethylenophosphonic acid(DTPP), polyvalent alcohol phosphonic acid ester (PAPE), 2-phosphonic acids butane-1; 2, one or more in 4-tricarboxylic acid (PBTCA), 2-HPAA (HPAA) and the polyamino polyether base tetramethylene phosphonic acid (PAPEMP).What the content of described organic phospho acid was preferable is mass percent 0.01～5%, and better is mass percent 0.1～2%, and best is mass percent 0.2～1%.
Wherein, described polycarboxylic acid compound comprises homopolymer and multipolymer, the salt that also comprises the polycarboxylic acid compound, preferable is sodium salt or ammonium salt, one or more in optimization polypropylene acid and salt thereof, polymaleic acid, poly-epoxy succinic acid, polyamino acid (as poly aspartic acid), hydrolyzed polymaleic anhydride (HPMA), poly-epoxy succinic acid, copolymer of maleic anhydride and acrylic acid, vinylformic acid-organic phosphine-co-polymer of sulfonate, the phosphonate group polymers of carboxylic acid (PCA).What the molecular weight of described polycarboxylic acid compound was preferable is 200～20000.What the content of described polycarboxylic acid compound was preferable is mass percent 0.01～5%, and better is mass percent 0.1～2%, and best is mass percent 0.2～1%.
Wherein, described lower aliphatic alcohols comprises monohydroxy-alcohol and polyvalent alcohol, and that preferable is C
1-C
4Lower aliphatic alcohols, one or more in preferred alcohol, propyl alcohol, Virahol, butanols, isopropylcarbinol, ethylene glycol and the glycerol.What the content of described lower aliphatic alcohols was preferable is mass percent 0.1～20%, and better is mass percent 1～15%, and best is mass percent 2～10%.
Wherein, described saccharide compound comprises monose, oligosaccharides and polysaccharide, and preferable is monose and derived carbohydrate thereof, and oligosaccharides and derived carbohydrate thereof, one or more that better is in glucose, gluconic acid, fructose, seminose and the maltose.What the content of described saccharide compound was preferable is mass percent 0.01～15%, and better is mass percent 1～10%, and best is mass percent 2～5%.
Wherein, described abrasive grains can be selected from abrasive grains commonly used in this area, as the silicon-dioxide of silicon-dioxide, aluminium sesquioxide, cerium dioxide, titanium dioxide, adulterated al, the silicon-dioxide or the high molecular polymerization composition granule of aluminium coating, preferable is silicon-dioxide.What the content of described abrasive grains was preferable is mass percent 0.1～20%, and better is mass percent 2～15%, and best is mass percent 5～10%.That the particle diameter of described abrasive grains is preferable is 20～150nm, and that better is 30～120nm.
Chemical mechanical polishing liquid of the present invention also can contain this area other additives commonly used, as oxygenant, membrane-forming agent, complexing agent and sterilant etc.
Among the present invention, what the pH value of described chemical mechanical polishing liquid was preferable is 1～7, and better is 2～5, and best is 2.5～4.5.
Polishing fluid of the present invention is by the simple uniform mixing of mentioned component, and adopting the pH regulator agent to be adjusted to suitable pH value afterwards can make.The pH regulator agent can be selected the conventional pH regulator agent in this area for use, as potassium hydroxide, ammoniacal liquor and nitric acid etc.Among the present invention, agents useful for same and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: in the polishing fluid of the present invention, the rate of increase that the particle diameter of abrasive grains prolongs in time is low.Storage time and work-ing life that chemical mechanical polishing liquid of the present invention has advantages of higher stability, grows.
Description of drawings
Fig. 1 is that contrast polishing fluid 1 and polishing fluid of the present invention 2～16 placed change of size comparison diagram after two weeks among the effect embodiment in 40 ℃ of baking ovens.
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～36
Table 1 has provided chemical mechanical polishing liquid embodiment 1～36 of the present invention, and by prescription in the table, with the simple uniform mixing of each composition, surplus is a water, adopts potassium hydroxide, ammoniacal liquor and nitric acid to be adjusted to suitable pH value afterwards, can make each embodiment polishing fluid.
Table 1 chemical mechanical polishing liquid embodiment 1～36 of the present invention
Effect embodiment
Table 2 has provided contrast polishing fluid 1 and polishing fluid of the present invention 2～16, and by prescription in the table, with the simple uniform mixing of each composition, surplus is a water, adopts potassium hydroxide, ammoniacal liquor and nitric acid to be adjusted to suitable pH value afterwards, can make each polishing fluid.Silicon-dioxide abrasive grains initial in each polishing fluid is 70nm, places two all backs and measure particle diameter such as table 2 and shown in Figure 1 in 40 ℃ of baking ovens.
Table 2 contrast polishing fluid 1 and polishing fluid of the present invention 2～16 prescription and abrasive grains change of size
By table 2 and Fig. 1 as seen, compare with the contrast polishing fluid, the rate of increase that the particle diameter of abrasive grains prolongs in time in the polishing fluid of the present invention is low, therefore has advantages of higher stability, long storage time and work-ing life.
Claims (18)
1. chemical mechanical polishing liquid, it contains abrasive grains and water, it is characterized in that it also contains in the following compositions one or more: organic phospho acid, polycarboxylic acid compound, the pure and mild saccharide compound of lower aliphatic.
2. chemical mechanical polishing liquid as claimed in claim 1; it is characterized in that: described organic phospho acid is selected from hydroxy ethylene diphosphonic acid, Amino Trimethylene Phosphonic Acid, ethylenediamine tetramethylene phosphonic acid, diethylenetriamine pentamethylenophosphonic acid(DTPP), polyvalent alcohol phosphonic acid ester, 2-phosphonic acids butane-1; 2, one or more in 4-tricarboxylic acid, 2-HPAA and the polyamino polyether base tetramethylene phosphonic acid.
3. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described organic phospho acid is mass percent 0.01～5%.
4. chemical mechanical polishing liquid as claimed in claim 3 is characterized in that: the content of described organic phospho acid is mass percent 0.1～2%.
5. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described polycarboxylic acid compound is selected from one or more in polyacrylic acid and salt, polymaleic acid, poly-epoxy succinic acid, polyamino acid, hydrolyzed polymaleic anhydride, copolymer of maleic anhydride and acrylic acid, vinylformic acid-organic phosphine-co-polymer of sulfonate, phosphonate group polymers of carboxylic acid and the vinylformic acid-organophosphorus-sulfonic acid copolymer.
6. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the molecular weight of described polycarboxylic acid compound is 200～20000.
7. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described polycarboxylic acid compound is mass percent 0.01～5%.
8. chemical mechanical polishing liquid as claimed in claim 7 is characterized in that: the content of described polycarboxylic acid compound is mass percent 0.1～2%.
9. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described lower aliphatic alcohols is one or more in ethanol, propyl alcohol, Virahol, butanols, isopropylcarbinol, ethylene glycol and the glycerol etc.
10. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described lower aliphatic alcohols is mass percent 0.1～20%.
11. chemical mechanical polishing liquid as claimed in claim 10 is characterized in that: the content of described lower aliphatic alcohols is mass percent 1～15%.
12. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described saccharide compound is selected from one or more in glucose, gluconic acid, fructose, maltose and the seminose.
13. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described saccharide compound is mass percent 0.01～15%.
14. chemical mechanical polishing liquid as claimed in claim 13 is characterized in that: the content of described saccharide compound is mass percent 1～10%.
15. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: described abrasive grains is a silicon-dioxide.
16. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the content of described abrasive grains is mass percent 0.1～20%.
17. chemical mechanical polishing liquid as claimed in claim 1 is characterized in that: the pH value of described chemical mechanical polishing liquid is 1～7.
18. chemical mechanical polishing liquid as claimed in claim 17 is characterized in that: the pH value of described chemical mechanical polishing liquid is 2～5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710171602 CN101451044B (en) | 2007-11-30 | 2007-11-30 | Chemico-mechanical polishing liquid |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200710171602 CN101451044B (en) | 2007-11-30 | 2007-11-30 | Chemico-mechanical polishing liquid |
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| CN101451044A true CN101451044A (en) | 2009-06-10 |
| CN101451044B CN101451044B (en) | 2013-10-02 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102101980A (en) * | 2009-12-18 | 2011-06-22 | 安集微电子（上海）有限公司 | Chemically mechanical polishing slurry |
| WO2012051786A1 (en) * | 2010-10-22 | 2012-04-26 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing slurry |
| CN102911605A (en) * | 2011-08-05 | 2013-02-06 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN104513626A (en) * | 2014-12-22 | 2015-04-15 | 深圳市力合材料有限公司 | Silicon chemical-mechanical polishing solution |
| CN109831914A (en) * | 2016-09-29 | 2019-05-31 | 花王株式会社 | Grinding Liquid composition |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1417278A (en) * | 2002-12-13 | 2003-05-14 | 清华大学 | Polishing slurry for disk base sheet of memory hard disk |
| US20030121214A1 (en) * | 2001-11-28 | 2003-07-03 | Fujimi Incorporated | Polishing composition for a substrate for a magnetic disk and polishing method employing it |
| JP2005138197A (en) * | 2003-11-04 | 2005-06-02 | Fujimi Inc | Polishing composition and polishing method |
| CN1782014A (en) * | 2004-11-26 | 2006-06-07 | 福吉米株式会社 | Polishing composition and polishing method using said composition |
| CN1955239A (en) * | 2005-10-28 | 2007-05-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing material of copper |
-
2007
- 2007-11-30 CN CN 200710171602 patent/CN101451044B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030121214A1 (en) * | 2001-11-28 | 2003-07-03 | Fujimi Incorporated | Polishing composition for a substrate for a magnetic disk and polishing method employing it |
| CN1417278A (en) * | 2002-12-13 | 2003-05-14 | 清华大学 | Polishing slurry for disk base sheet of memory hard disk |
| JP2005138197A (en) * | 2003-11-04 | 2005-06-02 | Fujimi Inc | Polishing composition and polishing method |
| CN1782014A (en) * | 2004-11-26 | 2006-06-07 | 福吉米株式会社 | Polishing composition and polishing method using said composition |
| CN1955239A (en) * | 2005-10-28 | 2007-05-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing material of copper |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102101980A (en) * | 2009-12-18 | 2011-06-22 | 安集微电子（上海）有限公司 | Chemically mechanical polishing slurry |
| WO2012051786A1 (en) * | 2010-10-22 | 2012-04-26 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing slurry |
| TWI573847B (en) * | 2010-10-22 | 2017-03-11 | Chemical mechanical polishing liquid (a) | |
| CN102911605A (en) * | 2011-08-05 | 2013-02-06 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| WO2013020351A1 (en) * | 2011-08-05 | 2013-02-14 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN104513626A (en) * | 2014-12-22 | 2015-04-15 | 深圳市力合材料有限公司 | Silicon chemical-mechanical polishing solution |
| CN104513626B (en) * | 2014-12-22 | 2017-01-11 | 深圳市力合材料有限公司 | Silicon chemical-mechanical polishing solution |
| CN109831914A (en) * | 2016-09-29 | 2019-05-31 | 花王株式会社 | Grinding Liquid composition |
| CN109831914B (en) * | 2016-09-29 | 2021-03-12 | 花王株式会社 | Polishing composition |
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| CN101451044B (en) | 2013-10-02 |
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