CN106867413B - High-concentration cerium oxide polishing solution and preparation method thereof - Google Patents
High-concentration cerium oxide polishing solution and preparation method thereof Download PDFInfo
- Publication number
- CN106867413B CN106867413B CN201710064997.0A CN201710064997A CN106867413B CN 106867413 B CN106867413 B CN 106867413B CN 201710064997 A CN201710064997 A CN 201710064997A CN 106867413 B CN106867413 B CN 106867413B
- Authority
- CN
- China
- Prior art keywords
- cerium oxide
- polishing
- polishing solution
- agent
- percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
The invention relates to a high-concentration cerium oxide polishing solution and a preparation method thereof, wherein the polishing solution is a water suspension and comprises the following components in percentage by mass: 40 to 60 percent of cerium oxide, 0.02 to 0.5 percent of dispersant, 0.5 to 5 percent of stabilizer, 0.06 to 1 percent of thickener, 0.1 to 2 percent of chelating agent, 0.25 to 5 percent of lubricant, 0.05 to 0.5 percent of bactericide, organic base regulator and the balance of deionized water. According to the invention, xanthan gum and CMC are compounded to be used as a thickening agent, so that cerium oxide particles can be suspended in the polishing solution for a long time, and silica sol is used as a stabilizing agent, so that the agglomeration of the cerium oxide particles can be reduced through the interaction between the cerium oxide particles and the xanthan gum, the cerium oxide particles are not hardened at the bottom of the polishing solution, and the redispersibility of the cerium oxide particles is enhanced. The polishing composition is suitable for polishing liquid crystal glass substrates, mobile phone cover plate glass, optical glass elements and the like, and has the advantages of large cutting force, good surface quality and easiness in cleaning after polishing.
Description
Technical Field
The invention belongs to the technical field of materials, and particularly relates to a high-concentration cerium oxide polishing solution and a preparation method thereof.
Background
China has abundant rare earth resources, the storage capacity of industrial cerium resources is about 1800 ten thousand tons, and cerium oxide polishing materials have the advantages of strong cutting capability, short polishing time, high polishing precision, clean operating environment and the like, so that the cerium oxide polishing materials are applied to many aspects, such as polishing of lenses, optical fibers, optical elements, silicon wafers, ITO glass, mobile phone glass, aviation glass, integrated circuit substrates and the like, and become one of important materials for chemical mechanical polishing.
At present, almost all polishing solutions adopted in the production of integrated circuits in China are imported, the domestic production is less, however, the selling price of the imported polishing solutions is high, so that the production cost of chips is increased, and particularly, cerium salt raw materials are imported from China by foreign enterprises and are processed and prepared into the polishing solutions to be sold to people. Domestic enterprises mainly produce polishing powder and few enterprises can produce polishing solution with good suspension stability. The domestic production of the polishing solution has the problems of low polishing efficiency, poor surface quality and the like due to poor dispersion stability and hardened and agglomerated cerium oxide particles. When preparing a high-concentration cerium oxide polishing solution, the polishing solution is required to have excellent suspension property and redispersibility (no obvious hardening condition at the bottom of the polishing solution). The rare earth polishing powder has good suspension property and redispersibility, has better polishing efficiency and can obtain better surface quality compared with the traditional rare earth polishing powder. The invention is beneficial to improving the product structure of polishing powder enterprises and improving the added value of rare earth products.
Disclosure of Invention
The invention aims to provide a high-concentration cerium oxide polishing solution to solve the defects of poor suspension and redispersibility, low removal rate, poor surface quality, serious environmental pollution and the like in the prior art.
The technical scheme for solving the technical problems comprises the following steps: the high-concentration cerium oxide polishing solution is provided, is an aqueous suspension and comprises the following components in percentage by mass:
the cerium oxide powder of the present invention has a particle size of 0.6 to 0.8 um.
The dispersant is one of sodium polyacrylate, ammonium polyacrylate and potassium polyacrylate. Polyacrylate is an anionic polymer electrolyte, has a polymer chain with a certain length, can play a role in steric stabilization, has charges carried by the polyacrylate and can play a role in electrostatic stabilization, so that the polyacrylate has excellent dispersing performance, and polyacrylate with low molecular weight is generally adopted as a dispersing agent. In some reports, sodium hexametaphosphate was used as a dispersant for cerium oxide, and six sodium phosphates were structurally characterized by the hydrophilic group-POO-And the hydrophilic group of the polyacrylate is-COO-The latter is more hydrophilic than the former, the more hydrophilic, the stronger the adsorptivity; in addition, sodium hexametaphosphate is a rigid structure, polyacrylate is a C chain, the C chain is flexible and can rotate freely, the sodium hexametaphosphate is easy to adsorb than rigid, and the sodium hexametaphosphate is easy to hydrolyze into phosphate after being placed in water for a long time, and the dispersion effect can be gradually reduced along with the increase of the hydrolysis degreeWeak, and polyacrylic acid salts do not. Therefore, the polyacrylate is used as a dispersant, so that the solid content of the abrasive and the stability of the dispersion system can be improved.
The stabilizing agent is nano silica sol, the silica sol generates negative adsorption to free particles in the suspension through colloidal particles, a vacancy layer is formed on the surface of cerium oxide particles, and stable dispersion of the suspension is realized due to the vacancy stabilizing effect. And because the silica sol is a colloid with negative electricity, the larger the negative electricity, the more vacancies are formed on the surfaces of the cerium oxide particles, the fewer the chances of the cerium oxide particles in contact with each other before, and the better the stability of the suspension, thereby effectively preventing the cerium oxide from hardening at the bottom of the suspension. The invention adopts silica sol with small grain diameter, and has low price and good dispersibility.
The thickening agent is compounded by xanthan gum and sodium carboxymethylcellulose, xanthan gum molecules are pentasaccharide repeating units formed by D-glucose, D-mannose, D-glucuronic acid, acetic acid and pyruvic acid, and are water-soluble biopolymer polymers, side chains in microstructures are combined with a main chain through hydrogen bonds to form a double-spiral structure, the double-spiral structure exists in a state of a multiple-spiral polymer, and the side chains of the xanthan gum molecules are negative charges of glucuronic acid base bands. The CMC also has a negative charge on the side chain, and when the xanthan gum reaches a certain amount, the suspension property of the cerium oxide particles may be enhanced due to the enhancement of electrostatic repulsive force between xanthan gum molecules and CMC molecules.
The chelating agent is one of ethylene diamine tetramethylene phosphonic acid sodium, hydroxyethylidene diphosphonic acid tetrasodium hydroxyethylidene diphosphonic acid and aminotrimethylene phosphonic acid tetrasodium. The organic phosphorus salts are adopted as the chelating agent, so that the method has the following advantages: 1) it can form stable complex with various metal ions, and reduce the pollution of the metal ions to a polishing solution system; 2) the polishing machine has a certain cleaning function, and is beneficial to cleaning a polished workpiece; 3) it is also a corrosion inhibitor at the same time, can protect the surface of the machine tool; 4) is stable at high pH value and high temperature, is not easy to hydrolyze and is easy to biodegrade.
The organic base regulator is one of ethanolamine, triethanolamine, ethylenediamine, hydroxyethyl ethylenediamine and tetramethyl ammonium hydroxide, and the pH value of the grinding liquid is 7-9. The use of organic base to adjust the pH prevents metal ion contamination caused by inorganic base adjustment, and it has been reported that the polishing efficiency of cerium oxide particles is better under alkaline conditions.
The lubricant is one or more of glycol and glycerol. The glycol or the glycerol is used as the lubricant, so that the xanthan gum can be better dissolved, the optimal thickening effect of the xanthan gum can be exerted, and the glycol or the glycerol can also be used as the lubricant to prevent the damage of workpieces caused by excessive continuous mechanical action in the polishing process.
The bactericide is 1, 2-benzisothiazolin-3-one (BIT), is a broad-spectrum bactericide (bacteriostatic) agent, and has the advantages of good water solubility, low toxicity, no formaldehyde or formaldehyde release, easy degradation and the like.
Drawings
FIG. 1 is a two-dimensional AFM image of ITO glass after polishing in example 1;
FIG. 2 is a two-dimensional AFM image of ITO glass after polishing of comparative example 1;
FIG. 3 is a two-dimensional AFM image of ITO glass after polishing of comparative example 2;
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments.
In a preferred embodiment of the present invention, the high concentration cerium oxide polishing solution is an aqueous suspension, and comprises the following components by mass:
in another preferred embodiment of the present invention, the polishing solution has the above components by weight, and particularly, the size of the cerium oxide particles is 0.6 to 0.8 um. The cerium oxide is preferably 45 to 55 mass%.
In another preferred embodiment provided by the present invention, the dispersant is one of sodium polyacrylate, ammonium polyacrylate and potassium polyacrylate. The preferable mass percentage of the dispersant is 0.05-0.2%.
In another preferred embodiment of the present invention, the stabilizer is a nano silica sol. The preferable mass percentage of the stabilizer is 1-3%.
In another preferred embodiment provided by the invention, the thickener is a xanthan gum compounded with sodium carboxymethyl cellulose. The preferable mass percentage of the thickening agent, xanthan gum is 0.1-0.5%; the preferred mass percentage of the sodium carboxymethylcellulose is 0.05-0.2%.
In another preferred embodiment of the present invention, the chelating agent is one of ethylenediamine tetramethylene phosphonic acid sodium, hydroxyethylidene diphosphonic acid tetrasodium hydroxyethylidene diphosphonic acid, and aminotrimethylene phosphonic acid tetrasodium. The preferable mass percentage of the chelating agent is 0.2-1%.
In another preferred embodiment provided by the present invention, the lubricant is one or more of ethylene glycol and glycerol. The preferable mass percentage of the lubricant is 0.5-2%.
In another preferred embodiment provided by the present invention, the organic base modifier is one of ethanolamine, triethanolamine, ethylenediamine, hydroxyethylethylenediamine and tetramethylammonium hydroxide, and preferably has a pH value of 7-8.
In another preferred embodiment provided by the present invention, the germicide is 1, 2-benzisothiazolin-3-one (BIT). The preferable mass percentage of the bactericide is 0.5-0.1%.
Examples 1-6, comparative example 1 (commercially available cerium oxide powder), comparative example 2 (commercially available cerium oxide polishing solution)
1. Formulation of polishing compositions
1) Fully dissolving xanthan gum with lubricant (ethylene glycol, glycerol) for use; 2) dissolving CMC with proper amount of deionized water; 3) dispersing cerium oxide particles by using the residual deionized water to obtain a suspension; 4) under the condition of mechanical stirring, sequentially adding a dispersing agent, a stabilizing agent, a chelating agent, a bactericide, an organic base pH regulator and 1)2) the obtained thickening agent into the cerium oxide suspension, and uniformly stirring to obtain the cerium oxide polishing solution, wherein the specific ratio is shown in table 1.
2. Polishing contrast test:
using the cerium oxide suspensions of examples 1 to 6 of the present invention, comparative example 1 (commercially available cerium oxide powder), and comparative example 2 (commercially available cerium oxide polishing liquid), 4-inch ITO glass was subjected to chemical mechanical polishing. The polishing equipment is a Retc instruments RBPo-6 type polishing machine, and the polishing process comprises the following steps: the specific gravity of the polishing solution is 1.08, the pressure is 0.02MPa, the upper disc rotating speed is 20rpm, the lower disc rotating speed is 60rpm, the flow rate is 120mL/min, and the time is 25 min.
TABLE 1 ingredient ratios in examples 1-6
3. Grinding evaluation criteria:
1) removal rate
And after polishing, ultrasonically cleaning and drying the ITO glass by using a cleaning agent, and then detecting the surface quality and the polishing rate of the ITO glass. Measuring the mass difference before and after polishing by using a precision balance, and evaluating the removal rate;
2) surface quality after polishing
And detecting the surface roughness of the polished ITO glass by using an atomic force microscope.
The test results are shown in table 2:
TABLE 2 Experimental results of examples and comparative examples
4. And (3) suspension rate determination:
reduction of specific gravity of the polishing solution (dilution solution) during polishing: the above 1-6 examples and comparative examples 1-2 were weighed to obtain appropriate amount of sample, and the suspension with specific gravity of 1.08 was used for polishing ITO glass, and the suspension was sampled every 2 hours (total 8 hours), and the experimental results are shown in Table 3.
The specific gravity of the polishing solution decreases (diluted solution) when the polishing solution is placed and observed: an appropriate amount of the sample was weighed in the above examples 1 to 6 and comparative examples 1 to 2, and placed in a measuring cylinder containing 250mL (30. + -. 2 ℃ C.), deionized water was added to the sample, the specific gravity was adjusted to 1.08, and the sample was placed to observe the decrease of the specific gravity, and the experimental results are shown in Table 3.
Standing and observing, wherein the suspension property and the redispersibility of the concentrated solution are as follows: examples 1-6 and example 2 above were placed in a 250mL stoppered cylinder and example 1 was formulated as a 45% solids suspension in a 250mL stoppered cylinder. The above 8 samples were prepared in duplicate for each sample: one part is placed for a certain time, the supernatant and the sedimentation layering liquid level are observed, and the experimental result is shown in table 4; the hardened condition of the bottom (turning the measuring cylinder upside down to see whether the bottom of the measuring cylinder is hardened) is observed in one part, and the experimental results are shown in table 5.
It is to be understood that the above-described embodiments are only a few, and not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
TABLE 3 results of polishing suspension test of examples and comparative examples
TABLE 4 results of suspension property test of examples and comparative examples
TABLE 5 results of redispersibility test of examples and comparative examples
Claims (2)
1. The high-concentration cerium oxide polishing solution is characterized in that the polishing solution is a water suspension and comprises the following components in percentage by mass:
40-60% of cerium oxide, 0.02-0.5% of dispersing agent, 0.5-5% of stabilizing agent, 0.06-1% of thickening agent, 0.1-2% of chelating agent, 0.25-3% of lubricating agent, 0.05-0.5% of bactericide, organic base regulator and the balance of deionized water;
the size of the cerium oxide particles is 0.6-0.8 mu m;
the dispersant is sodium polyacrylate PAAS and ammonium polyacrylate PAA-NH4One of potassium polyacrylate K-PAM;
the stabilizer is nano silica sol;
the thickening agent is formed by compounding xanthan gum and sodium carboxymethyl cellulose (CMC);
the chelating agent is one of amino trimethylene phosphonic acid tetrasodium ATMP.4 Na, hydroxy ethylidene diphosphonic acid tetrasodium HEDP.4 Na and ethylene diamine tetramethylene phosphonic acid sodium EDTMPS;
the lubricant is glycerol;
the organic base regulator is one of ethanolamine, triethanolamine, ethylenediamine, hydroxyethyl ethylenediamine AEEA and tetramethyl ammonium hydroxide.
2. A method for preparing the high-concentration cerium oxide polishing solution according to claim 1, wherein:
1) dissolving xanthan gum with glycerol;
2) dissolving CMC with proper amount of deionized water;
3) dispersing cerium oxide particles by using the residual deionized water to obtain a suspension;
4) under the condition of mechanical stirring, sequentially adding a dispersing agent, a stabilizing agent, a chelating agent, a bactericide, an organic base pH regulator and the thickening agents obtained in steps 1) and 2) into the cerium oxide suspension, and uniformly stirring to obtain the cerium oxide polishing solution.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710064997.0A CN106867413B (en) | 2017-02-06 | 2017-02-06 | High-concentration cerium oxide polishing solution and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710064997.0A CN106867413B (en) | 2017-02-06 | 2017-02-06 | High-concentration cerium oxide polishing solution and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106867413A CN106867413A (en) | 2017-06-20 |
CN106867413B true CN106867413B (en) | 2021-06-04 |
Family
ID=59166042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710064997.0A Active CN106867413B (en) | 2017-02-06 | 2017-02-06 | High-concentration cerium oxide polishing solution and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106867413B (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109929460A (en) * | 2017-12-19 | 2019-06-25 | 蓝思科技(长沙)有限公司 | A kind of glass polishing water base cerium oxide polishing slurry and preparation method thereof |
CN108329842A (en) * | 2018-01-22 | 2018-07-27 | 东旭科技集团有限公司 | Polishing fluid composition and preparation method thereof and glass polishing method |
CN109096922A (en) * | 2018-08-24 | 2018-12-28 | 甘肃稀土新材料股份有限公司 | A kind of rare earth polishing and preparation method thereof containing yttrium |
CN109987854B (en) * | 2019-04-12 | 2022-05-03 | 东莞市嘉逸光电有限公司 | Secondary strengthening method of toughened glass |
CN112574675B (en) * | 2019-09-27 | 2021-12-07 | 比亚迪股份有限公司 | Glass polishing solution, preparation method thereof and polishing method using glass polishing solution |
CN111777987B (en) * | 2020-07-29 | 2021-06-22 | 中国科学院兰州化学物理研究所 | Grinding suspending agent, preparation method and application thereof, and grinding agent |
CN112658812B (en) * | 2020-12-18 | 2023-01-10 | 中国人民解放军国防科技大学 | CCOS shear thickening polishing method |
CN115141548B (en) * | 2021-03-15 | 2023-12-05 | 拓米(成都)应用技术研究院有限公司 | High-suspension cerium oxide polishing solution and polishing process and application thereof |
CN117327451B (en) * | 2023-09-28 | 2024-03-22 | 中建材光芯科技有限公司 | Polishing mixture for polishing polymer optical fiber panel and preparation method and application thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105086836A (en) * | 2015-08-19 | 2015-11-25 | 三峡大学 | Cerium oxide polishing solution and preparation method thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2414071A1 (en) * | 1978-01-05 | 1979-08-03 | Essilor Int | POLISHING MATERIAL, ESPECIALLY FOR OPHTHALMIC LENSES IN ORGANIC MATTER |
JP5017574B2 (en) * | 2001-05-25 | 2012-09-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | Cerium oxide abrasive and method for producing substrate |
JP2008186898A (en) * | 2007-01-29 | 2008-08-14 | Nissan Chem Ind Ltd | Composition for polishing |
KR101341875B1 (en) * | 2008-04-30 | 2013-12-16 | 한양대학교 산학협력단 | Slurry for polishing phase changeable meterial and method for patterning polishing phase changeable meterial using the same |
CN104178033A (en) * | 2013-05-27 | 2014-12-03 | 天津西美半导体材料有限公司 | Nano cerium oxide polishing liquid composition |
-
2017
- 2017-02-06 CN CN201710064997.0A patent/CN106867413B/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105086836A (en) * | 2015-08-19 | 2015-11-25 | 三峡大学 | Cerium oxide polishing solution and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN106867413A (en) | 2017-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106867413B (en) | High-concentration cerium oxide polishing solution and preparation method thereof | |
CN109673157B (en) | Polishing composition and polishing composition kit | |
CN102796460B (en) | Silicon dioxide-based CMP (Chemical Mechanical Polishing) solution and preparation method thereof | |
TWI541334B (en) | Polishing composition | |
CN102190962A (en) | Polishing composition and polishing method using the same | |
CN113621346B (en) | Suspension auxiliary agent applied to large-size silicon wafer grinding, preparation method and application thereof | |
CN105385357A (en) | Polishing solution for A orientation sapphire polishing, and preparation method thereof | |
CN112080251B (en) | Wafer grinding fluid and preparation method thereof | |
CN113980581B (en) | Environment-friendly suspending agent based on sapphire grinding, and preparation method and application thereof | |
CN109576024A (en) | Water-coal-slurry and preparation method thereof | |
JP2019520989A (en) | In-situ formation of aqueous, semi-aqueous, non-aqueous slurry suspensions of viscous particles for the purpose of separating and suspending inert particles and abrasive particles in dispersion medium | |
TW201704442A (en) | Polishing composition and polishing method using the same which is excellent in dissolution stability and capable of polishing at a high polishing rate and aplied to especially a high hardened and high brittle substrate | |
CN101092552A (en) | Grinding fluid for silicon wafer | |
CN114231251A (en) | Diamond grinding fluid for coarse grinding of silicon carbide wafer and preparation method thereof | |
CN114479676A (en) | Low-abrasive-content and weakly acidic polishing solution for ultraprecise processing of optical glass and preparation method thereof | |
CN108221050B (en) | Monocrystalline silicon piece with double-peak pyramid suede structure | |
CN109576025A (en) | Water-coal-slurry compound additive and preparation method thereof | |
CN113667546A (en) | Cleaning agent composition used after silicon wafer processing | |
JP5574702B2 (en) | Polishing particle dispersion comprising aggregates of organic particles and silica particles, and method for producing the same | |
CN108822738B (en) | Colored glaze chemical polishing solution | |
CN108841371B (en) | Composite pulverized coal suspending agent for coal bed gas fracturing and preparation method thereof | |
CN114456716B (en) | Aluminum oxide polishing solution for polishing sapphire and preparation method thereof | |
CN114806501B (en) | Modified diamond powder, preparation method, application and polishing solution containing modified diamond powder | |
CN114015360B (en) | Water-based full-suspension diamond polishing solution for sapphire, preparation method and application thereof | |
CN115141548B (en) | High-suspension cerium oxide polishing solution and polishing process and application thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201027 Address after: 014000, rare earth hi tech Zone, the Inner Mongolia Autonomous Region, Baotou rare earth application Industrial Park No. 8-24 Applicant after: BAOTOU JIEMINGNA OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 014000, rare earth hi tech Zone, the Inner Mongolia Autonomous Region, Baotou rare earth application Industrial Park No. 8-24 Applicant before: BAOTOU JINJIE RARE EARTH NANO MATERIAL Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant |