CN112080251B - Wafer grinding fluid and preparation method thereof - Google Patents
Wafer grinding fluid and preparation method thereof Download PDFInfo
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- CN112080251B CN112080251B CN202010903010.1A CN202010903010A CN112080251B CN 112080251 B CN112080251 B CN 112080251B CN 202010903010 A CN202010903010 A CN 202010903010A CN 112080251 B CN112080251 B CN 112080251B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
- C10M2201/06—Metal compounds
- C10M2201/062—Oxides; Hydroxides; Carbonates or bicarbonates
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
- C10M2201/085—Phosphorus oxides, acids or salts
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/10—Carboxylix acids; Neutral salts thereof
- C10M2207/12—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2207/125—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids
- C10M2207/127—Carboxylix acids; Neutral salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having hydrocarbon chains of eight up to twenty-nine carbon atoms, i.e. fatty acids polycarboxylic
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
- C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
- C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
- C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2215/042—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups; Alkoxylated derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/08—Amides
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Lubricants (AREA)
Abstract
The invention discloses a wafer grinding fluid and a preparation method thereof, and relates to the technical field of semiconductor materials. The invention relates to a wafer grinding fluid, which comprises grinding powder, grinding oil, a dispersing agent, a surfactant, a chelating agent and deionized water as raw materials. The invention discloses a wafer grinding fluid and a preparation method thereof, which increase the antirust capacity of a grinding disc and improve the grinding efficiency and the grinding quality through the combined action of all components.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a wafer grinding fluid and a preparation method thereof.
Background
The grinding process is a very important process throughout the processing of semiconductor materials. The main role of grinding is to perform finishing (e.g., cutting) of a work surface by relative movement of a grinding tool and a workpiece under a certain pressure using abrasive particles coated or pressed on the grinding tool. The grinding can be used for processing various metal and non-metal materials, and the processed surface has the shapes of planes, inner and outer cylindrical surfaces, conical surfaces, convex and concave spherical surfaces, threads, tooth surfaces and other molded surfaces.
The main body of the grinding fluid is divided into an oil agent and a water agent, and the oil agent grinding fluid mainly comprises aviation gasoline, kerosene, pressure-variable gasoline, various vegetable oils, animal oil and hydroxyl, and is matched with various additives. The aqueous grinding fluid is prepared from water and various soaps. The oil agent is mainly good in viscosity, lubrication and antirust performance, but is troublesome to clean and pollutes the environment. Aqueous polishing solutions are preferred for use in polishing wafers, but have the disadvantage of poor rust resistance. The lubricating property and the antirust property of the novel grinding fluid are improved, the used grinding disc is a cast iron disc, the antirust property of the grinding disc needs to be improved, and the service life of the grinding disc is prolonged.
Disclosure of Invention
In view of the above problems, the present invention is directed to a wafer polishing slurry and a method for preparing the same, which can increase the anti-rust ability of a polishing disk and improve the polishing efficiency and the polishing quality by the combined action of the components.
Specifically, the raw materials of the wafer polishing solution comprise polishing powder, polishing oil, a dispersing agent, a surfactant, a chelating agent and deionized water.
The wafer polishing solution of the invention has the advantages that the polishing oil can chemically act on the oxide film on the surface of the metal to soften the oxide film, and the oxide film is easy to polish and remove from the surface, so that the polishing efficiency is improved; and can play a role in lubricating between the grinding block and the metal part, thus obtaining a smooth surface; the oil stain on the surface of the metal part can be removed; the parts after grinding have a certain antirust effect in a short time before being cleaned; during the finishing operation, the components are stirred with water, which can alleviate the mutual impact between the components.
The dispersing agent plays a role in uniformly dispersing the grinding powder which is insoluble in water, can prevent solid particles from coagulating and settling at the same time, achieves the effect of suspending the grinding material, and can ensure that the grinding liquid has good dispersing performance, the grinding powder is uniformly distributed, and the dispersing agent can not generate precipitation in a short time, thereby improving the grinding rate and the grinding quality to a great extent.
The surfactant is mainly used for wetting the grinding powder particles and the surface of the wafer, emulsifying the internal components of the grinding fluid and playing a certain lubricating role in the grinding of the wafer in the grinding process.
The metal atom or ion of the chelating agent reacts with a ligand containing two or more coordinating atoms to form a complex having a re-assembly structure. When the wafer grinds, slight wearing and tearing can appear in the cast iron dish, lead to appearing the Fe impurity, when grinding, the looks mutual friction between abrasive powder and the abrasive disc, can cause the loss of abrasive disc, a large amount of Fe impurity gets into the lapping liquid, including its oxide, and the exposed new chemical bond in wafer surface after the grinding, the activity is very strong, make the Fe impurity in the lapping liquid very easily adsorb the surface at the wafer, form accurate chemical bond, extremely difficult washing, consequently add the chelator in the course of grinding, let Fe impurity and chelator produce stable chelate, thereby prevent the absorption of Fe impurity to the wafer to a certain extent.
Further, the grinding powder is alpha-alumina.
The alpha-alumina has the advantages of high hardness and good chemical property stability, is ground by using the alpha-alumina, has small granularity, high wear resistance and stable physical property, and can reduce the damage to the indium phosphide wafer during grinding.
Further, the grinding fluid comprises the following raw materials in percentage by mass: 28.5 to 30 percent of grinding powder, 1 to 2 percent of grinding oil, 1 to 2 percent of dispersant, 1 to 2 percent of surfactant, 2 to 3 percent of chelating agent and 61.5 to 65 percent of deionized water.
Further, the grinding fluid comprises the following raw materials in percentage by mass: 30% of grinding powder, 1% of grinding oil, 1% of dispersing agent, 1% of surfactant, 2% of chelating agent and 65% of deionized water.
Further, the grinding fluid comprises the following raw materials in percentage by mass: 30% of grinding powder, 1.5% of grinding oil, 1.5% of dispersing agent, 1.5% of surfactant, 2% of chelating agent and 63.5% of deionized water.
Further, the grinding fluid comprises the following raw materials in percentage by mass: 30% of grinding powder, 1.5% of grinding oil, 1.5% of dispersing agent, 2% of surfactant, 2% of chelating agent and 64% of deionized water.
Further, the grinding fluid comprises the following raw materials in percentage by mass: 30% of grinding powder, 1.5% of grinding oil, 1.5% of dispersing agent, 1.5% of surfactant, 2.5% of chelating agent and 63% of deionized water.
Further, the dispersing agent is sodium hexametaphosphate, the surfactant is polyethylene glycol, and the chelating agent is disodium ethylene diamine tetraacetate.
The sodium hexametaphosphate has strong hygroscopicity, and when the sodium hexametaphosphate is used as a dispersing agent, the sodium hexametaphosphate is adsorbed on the surface of solid particles to form an adsorption layer, so that the electric charge on the surface of the solid particles is increased, the reaction force between the particles forming steric hindrance is improved, the surface of the agglomerated solid particles is easy to wet, and the dispersibility of a liquid material after solid is improved; polyethylene glycol has good water solubility, good lubricity, moisture retention type, dispersibility, adhesiveness, antistatic property, softness and the like, active agent molecules of the polyethylene glycol can be rapidly spread on the surfaces of wafers and particles by virtue of the wetting action during grinding to form a compact protective layer, actively extend into a contact gap between the wafer and the grinding material, and attract and combine with residual free bonds on the wafer and the grinding material at any time, so that the acting force between the wafer and the grinding material is reduced, and the wafer is ground to play a role in lubricating; disodium ethylenediaminetetraacetate, a good chelating agent, has six coordinating atoms and can form stable chelate with dozens of metal ions.
Further, the raw materials of the grinding oil comprise sodium azelaic acid amide and sodium laurate.
Further, the raw materials of the grinding oil comprise 8-10 wt% of sodium azelaic acid amide and 8-10 wt% of sodium laurate.
Further, the grinding oil comprises, by mass, 8% -10% of sodium azelate amide, 8% -10% of sodium laurate, 10% -20% of monoethanolamine, 15% -25% of triethanolamine, and 35% -59% of water.
Further, the grinding fluid is used for grinding and processing wafers, and the wafers are indium phosphide wafers.
In addition, the invention also discloses a preparation method of the wafer grinding fluid, which comprises the following steps: respectively weighing the dispersing agent, the surfactant and the chelating agent, stirring and mixing uniformly to obtain a mixed solution, adding the mixed solution into grinding powder, continuously stirring and dispersing, pouring into deionized water, continuously stirring and mixing for 30-60min, adding grinding oil, continuously stirring and mixing uniformly, and filtering twice by using a high-density filter screen to obtain the grinding fluid.
Furthermore, the mesh number of the high-density filter screen is 200 meshes.
The invention has the beneficial effects that:
1. the invention discloses a wafer grinding fluid.A dispersing agent can prevent grinding powder from coagulating and settling, so that grinding materials are uniformly distributed; the surfactant can wet the grinding powder particles and the surface of the wafer and play a role in lubrication in the grinding process; the chelating agent can react with iron ions falling off due to abrasion of the grinding disc to produce chelate, so that impurities are prevented from being generated and influence on a wafer is prevented; the grinding fluid can play a role in rust prevention in grinding gaps, prevent the grinding disc from generating rust and influencing the grinding quality of wafers, and simultaneously can soften an oxide film on the surface of metal to enable the oxide film to be easily removed from the surface in a grinding mode, so that the grinding efficiency is improved.
2. According to the wafer grinding fluid disclosed by the invention, through the research on the proportion and the composition by the inventor, the finally obtained grinding fluid has good suspension property, uniform color, no precipitation phenomenon in a short time and good dispersibility, and the wafer ground by using the grinding fluid disclosed by the invention has the advantages that the surface of the wafer is smooth and flat, and no damage occurs.
3. According to the grinding oil, the added sodium azelamide and sodium laurate enable the grinding oil to have a good anti-rust function, the used sodium laurate is alkalescent and accords with the alkaline characteristic of the grinding oil, and the added monoethanolamine and triethanolamine can increase the lubricity and the corrosion resistance of the grinding oil.
Detailed Description
The present invention will be described in detail with reference to specific examples below:
the wafer grinding fluid comprises 28.5-30% of grinding powder, 1-2% of grinding oil, 1-2% of dispersing agent, 1-2% of surfactant, 2-3% of chelating agent and 61.5-65% of deionized water, wherein the grinding oil comprises the following raw materials in percentage by mass: 8 to 10 percent of azelaic acid amide sodium, 8 to 10 percent of sodium laurate, 10 to 20 percent of monoethanolamine, 15 to 25 percent of triethanolamine and 35 to 59 percent of water, and the concrete steps are as follows:
example one
The grinding oil comprises the following raw materials in percentage by mass: 8% of azelaic acid amide sodium, 8% of sodium laurate, 10% of monoethanolamine, 15% of triethanolamine and 59% of water.
The grinding fluid comprises the following raw materials in percentage by mass: 30% of grinding powder, 1% of grinding oil, 1% of dispersing agent, 1% of surfactant, 2% of chelating agent and 65% of deionized water.
Preparation of grinding oil
The preparation method comprises the steps of weighing the raw materials according to the proportion, firstly adding sodium azelaic acid amide into water, continuously stirring until the sodium azelaic acid amide is completely dissolved, then adding sodium laurate, stirring for dissolving, then adding monoethanolamine and triethanolamine, and stirring uniformly to obtain the grinding oil.
Preparation of grinding fluid
According to the proportion, the dispersing agent sodium hexametaphosphate, the surfactant polyethylene glycol and the chelating agent disodium ethylene diamine tetraacetate are respectively weighed in sequence, stirred and mixed uniformly to obtain a mixed solution, the mixed solution is added into the grinding powder alpha-alumina, poured into deionized water after continuous stirring and dispersion, stirred and mixed for 30-60min continuously, the mixture is selected for 50min, grinding oil is added, stirred and mixed uniformly continuously, and a 200-mesh filter screen is used for filtering twice to obtain the grinding fluid.
Example two
The grinding oil comprises the following raw materials in percentage by mass: 10% of azelaic acid amide sodium, 10% of sodium laurate, 10% of monoethanolamine, 25% of triethanolamine and 45% of water.
The grinding fluid comprises the following raw materials in percentage by mass: 30% of grinding powder, 1.5% of grinding oil, 1% of dispersing agent, 1.5% of surfactant, 2% of chelating agent and 64% of deionized water
The preparation of the grinding oil and the preparation method of the grinding fluid are the same as in the first embodiment.
EXAMPLE III
The grinding oil comprises the following raw materials in percentage by mass: 8% of azelaic acid amide sodium, 8% of sodium laurate, 10% of monoethanolamine, 25% of triethanolamine and 49% of water.
The grinding fluid comprises the following raw materials in percentage by mass: 30% of grinding powder, 1.5% of grinding oil, 1.5% of dispersing agent, 1.5% of surfactant, 2% of chelating agent and 63.5% of deionized water.
The preparation of the grinding oil and the preparation method of the grinding fluid are the same as in the first embodiment.
Example four
The grinding oil comprises the following raw materials in percentage by mass: 10% of azelaic acid amide sodium, 10% of sodium laurate, 20% of monoethanolamine, 25% of triethanolamine and 35% of water.
The grinding fluid comprises the following raw materials in percentage by mass: 30% of grinding powder, 1.5% of grinding oil, 1.5% of dispersing agent, 1.5% of surfactant, 2.5% of chelating agent and 63% of deionized water.
The preparation of the polishing oil and the preparation of the polishing slurry were the same as in example one.
Comparative example 1
Compared with the first embodiment, the difference between the first embodiment and the second embodiment is that the grinding fluid of the first embodiment comprises the following raw materials in percentage by mass: 30% of grinding powder, 1% of grinding oil, 1% of surfactant, 2% of chelating agent and 66% of deionized water.
Comparative example No. two
Compared with the first embodiment, the difference between the first embodiment and the second embodiment is that the grinding fluid of the first embodiment comprises the following raw materials in percentage by mass: 30% of grinding powder, 1% of grinding oil, 1% of dispersing agent, 2% of chelating agent and 66% of deionized water.
Comparative example No. three
Compared with the first embodiment, the difference between the first embodiment and the second embodiment is that the grinding fluid of the first embodiment comprises the following raw materials in percentage by mass: 30% of grinding powder, 1% of grinding oil, 1% of surfactant, 1% of dispersant and 67% of deionized water.
Comparative example No. four
Compared with the first embodiment, the difference between the first embodiment and the second embodiment is that the grinding fluid of the first embodiment comprises the following raw materials in percentage by mass: 30% of grinding powder, 1% of surfactant, 1% of dispersant, 2% of chelating agent and 66% of deionized water.
Comparative example five
Compared with the first example, the difference of the comparative example is that the grinding oil of the comparative example comprises the following raw materials in percentage by mass: 10% of monoethanolamine, 15% of triethanolamine and 75% of water.
The polishing solutions prepared in the first to fourth embodiments and the first to fifth comparative examples are respectively used for wafer polishing, and the specific steps are as follows:
adding the prepared grinding fluid into a stirring barrel of a grinding machine for continuous stirring, selecting 20 indium phosphide wafers with the thickness of 770-780mm of the same crystal bar, and setting the processing parameters of the grinding machine as follows: the unit processing pressure is 32N, the rotating speed of the upper dial is 6r/min, the rotating speed of the lower dial is 9r/min, the processing time is 20min, and the grinding is started.
After grinding, measuring the thickness of the wafer, taking the wafer, putting the wafer into a card plug, carrying out corrosion cleaning, removing residues existing on the surface, taking the card plug out every 5min during the process of:
TABLE 1
As can be seen from table 1, in the range of the mixture ratio of the polishing slurry, when the wafer is polished, the wafer meets the required standard, the flatness of the wafer and the surface smoothness meet the standards, when any one of the components of the polishing slurry is lacked, the wafer is lost, the wafer is scratched, and the like, and the delivery standard cannot be reached.
Wherein, in the grinding process, when the grinding fluid contains the following raw materials in percentage by mass: when 1% of dispersing agent (sodium hexametaphosphate), 1% of surfactant (polyethylene glycol), 2% of chelating agent (disodium ethylene diamine tetraacetate), 1% of grinding oil, 30% of grinding powder (alpha-alumina) and 65% of deionized water are used, the grinding fluid has the best economic benefit and the most suitable grinding benefit.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims. The techniques, shapes, and configurations not described in detail in the present invention are all known techniques.
Claims (5)
1. The wafer grinding fluid is characterized in that raw materials of the grinding fluid comprise grinding powder, grinding oil, a dispersing agent, a surfactant, a chelating agent and deionized water, and the grinding fluid comprises the following raw materials in percentage by mass: 28.5-30% of grinding powder, 1-2% of grinding oil, 1-2% of dispersant, 1-2% of surfactant, 2-3% of chelating agent and 61.5-65% of deionized water, wherein the grinding oil comprises the following raw materials, by mass, 8-10% of sodium azelate amide, 8-10% of sodium laurate, 10-20% of monoethanolamine, 15-25% of triethanolamine and 35-59% of water, the grinding powder is alpha-alumina, the dispersant is sodium hexametaphosphate, the surfactant is polyethylene glycol, and the chelating agent is disodium ethylenediamine tetraacetate.
2. The wafer polishing solution according to claim 1, wherein the polishing solution is prepared from the following raw materials in percentage by mass: 30% of grinding powder, 1% of grinding oil, 1% of dispersing agent, 1% of surfactant, 2% of chelating agent and 65% of deionized water.
3. The wafer polishing solution according to claim 1, wherein the polishing solution is prepared from the following raw materials in percentage by mass: 30% of grinding powder, 1.5% of grinding oil, 1.5% of dispersing agent, 1.5% of surfactant, 2% of chelating agent and 63.5% of deionized water.
4. The wafer polishing solution according to claim 1, wherein the polishing solution is prepared from the following raw materials in percentage by mass: 30% of grinding powder, 1.5% of grinding oil, 1.5% of dispersing agent, 1.5% of surfactant, 2.5% of chelating agent and 63% of deionized water.
5. A preparation method of a wafer grinding fluid is characterized by comprising the following steps: the wafer polishing solution according to any one of claims 1 to 4, wherein the dispersing agent, the surfactant and the chelating agent are weighed respectively, stirred and mixed uniformly to obtain a mixed solution, the mixed solution is added to the polishing powder, stirred and dispersed continuously, poured into deionized water, stirred and mixed continuously for 30-60min, then the polishing oil is added, stirred and mixed uniformly continuously, and filtered twice by using a high-density filter screen to obtain the polishing solution.
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| CN112975736A (en) * | 2021-01-26 | 2021-06-18 | 威科赛乐微电子股份有限公司 | Grinding method of indium phosphide wafer |
| CN113088253A (en) * | 2021-04-12 | 2021-07-09 | 武楠 | Grinding fluid for chips and preparation method thereof |
| CN113698914A (en) * | 2021-07-09 | 2021-11-26 | 威科赛乐微电子股份有限公司 | Suspension, grinding fluid and preparation method thereof |
| CN114774081A (en) * | 2022-05-26 | 2022-07-22 | 上海皇晶生物科技有限公司 | Grinding fluid for grinding and polishing process and preparation method thereof |
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| CN101092552A (en) * | 2006-06-23 | 2007-12-26 | 天津晶岭电子材料科技有限公司 | Grinding fluid for silicon wafer |
| CN102010664B (en) * | 2010-07-21 | 2013-02-27 | 天津晶岭微电子材料有限公司 | Method for preparing CMP (Chemical Mechanical Polishing) polishing solution of hard disc indium phosphide substrate |
| JPWO2012169515A1 (en) * | 2011-06-08 | 2015-02-23 | 株式会社フジミインコーポレーテッド | Abrasive material and polishing composition |
| CN104900492B (en) * | 2015-05-13 | 2018-08-07 | 北京通美晶体技术有限公司 | A kind of abnormity semiconductor wafer and preparation method thereof |
| CN105063629A (en) * | 2015-08-19 | 2015-11-18 | 合肥市田源精铸有限公司 | Water-soluble antirusting agent |
| CN108486585A (en) * | 2018-04-10 | 2018-09-04 | 苏州捷德瑞精密机械有限公司 | A kind of highly effective antirust metal cleaner and preparation method thereof |
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