CN102010664B - Method for preparing CMP (Chemical Mechanical Polishing) polishing solution of hard disc indium phosphide substrate - Google Patents
Method for preparing CMP (Chemical Mechanical Polishing) polishing solution of hard disc indium phosphide substrate Download PDFInfo
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- CN102010664B CN102010664B CN 201010231656 CN201010231656A CN102010664B CN 102010664 B CN102010664 B CN 102010664B CN 201010231656 CN201010231656 CN 201010231656 CN 201010231656 A CN201010231656 A CN 201010231656A CN 102010664 B CN102010664 B CN 102010664B
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- negative pressure
- eddy current
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- indium phosphide
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Abstract
The invention relates to a method for preparing a CMP (Chemical Mechanical Polishing) polishing solution in the high precise processing course of the surface of a hard disc indium phosphide substrate. In the polishing solution, a nanometer SiO2 abrasive material with high concentration is selected, the concentration of the abrasive material is 5-50wt%, the particle diameter is 15-100nm, and the pH value is 9-12. In the preparation method, the negative pressure eddy current stirring is utilized, the pollution of organic matters, big particles, metal ions, and the like caused by the traditional preparation method, such as composite combination, mechanical stirring, and the like is avoided, and the very clean requirement can be reached. The method can realize no coacervation and no dissolution under the condition that the nanometer SiO2 abrasive material has high concentration and high pH value, and has the advantages of low cost, low roughness, high rate, no environmental pollution or equipment corrosion.
Description
Technical field
The invention belongs to the polishing fluid preparation method, particularly relate to the polishing fluid preparation method of hard disk indium phosphide (InP) substrate.
Background technology
In recent years, computer technology is advanced by leaps and bounds, as the critical piece hard disk of computer data storage, to the future development of large capacity, high rotating speed, small size and high security.The monolithic capacity is increased, just the surface appearance after the hard disk substrate polishing has been proposed very high requirement.The existing CMP technology that improves the hard disk substrate surface appearance is mainstream technology.The hard disk substrate surface roughness drops to below the 0.1nm after the polishing, and percent ripple has improved the memory capacity of monolithic hard disk to a great extent less than 0.2nm.The material of making hard disk substrate mainly contains InP/Al alloy, glass and devitrified glass.Present multiplex InP/Al alloy is made hard disk substrate; Devitrified glass though have very large advantages for development, is used not extensive because of its unique advantage.
Polishing fluid preparation method as one of polishing technology is even more important.At present domestic in the batch production of hard disk InP substrate used polishing fluid import most, one of reason is exactly the negative effects such as pollution that domestic traditional polishing fluid preparation method brings.Easily cause harmful pollutions such as organic substance, metal ion, bulky grain such as traditional preparation methods such as composite and mechanical agitation.Thereby cause the raising of cost in the following process and the reduction of device yield.
Summary of the invention
The present invention is in order to solve harmful pollutions such as organic substance that known hard disk InP substrate polishing liquid exists, metal ion, bulky grain in preparation process, and discloses a kind of simple and easy to do, free of contamination hard disk InP substrate polishing liquid and preparation method thereof.
Preparation method's step of hard disk InP substrate CMP polishing fluid of the present invention is as follows:
(1) will clean three times under the closed reactor system usefulness deionized water negative pressure eddy current;
(2) add gradually amine alkali under negative pressure eddy current state and regulate the pH value, the amount that adds amine alkali is 1-6%, and inorganic strong alkali reagent sucks under negative pressure eddy current state gradually with the above ultra-pure water dilution of 18M Ω is rear, and the amount that adds inorganic strong alkali is 0.2-1.5%; The pH value is adjusted to 9-12;
(3) add gradually Jingling Microelectric Material Co., Ltd., Tianjin under negative pressure eddy current state and sell the FA/O activating agent, the amount that adds the FA/O activating agent is 0.3-2.5%; 18 minutes duration;
(4) add gradually Jingling Microelectric Material Co., Ltd., Tianjin under negative pressure eddy current state and sell the FA/O chelating agent, the amount that adds the FA/O chelating agent is 0.3-2.5%;
(5) with nanometer SiO
2Colloidal sol is with in the negative pressure sucting reaction device and be the eddy current state, and described colloidal sol is the SiO of particle diameter 15～100nm, decentralization＜0.001, Mohs' hardness 7
2Colloidal sol, concentration 30～5Owt%;
(6) fully stir under the negative pressure eddy current state, mixing time is 5-20 minute, carries out can after evenly;
Above-mentioned each percentage by weight is all take the polishing fluid that obtains at last as benchmark.
The FA/O activating agent that above-mentioned Jingling Microelectric Material Co., Ltd., Tianjin sells is APEO, is (C
15H
15～190 (CH
2CH
2O)
5H), (C
20H
15～190 (CH
2CH
2O)
5H), (C
4OH
15～190 (CH
2CH
2O)
5H) compound.
The FA/O chelating agent that above-mentioned Jingling Microelectric Material Co., Ltd., Tianjin sells is ethylenediamine tetra-acetic acid four (tetrahydroxyethyl-ethylene diamine), and structural formula is as follows:
The acting as of employing method among the present invention:
The method that polishing fluid preparation feedback device adopts negative pressure to stir can be avoided the introducing of the noxious pollutants such as organic substance, metal ion, bulky grain; Nano silica sol is the eddy current state under negative pressure, add first the FA/O activating agent and can improve polishing slurries stability, the FA/O activating agent can coat the Nano silica sol of rear adding, room resistance between the increasing abrasive is so that the colloidal grinding material in the situation that the suitable pH of raising can steady in a long-termly exist, has avoided Nano silica sol to dissolve greater than generation in 12 o'clock in the pH value; Prevent the cohesion of laminar region Ludox or dissolving and can't use; Can avoid the alkaline pH conditioning agent after the above ultra-pure water of 18M Ω dissolves to cause cohesion owing to local pH is too high, can't use.
Beneficial effect of the present invention and advantage:
1. preparation method of the present invention is by making the liquid in the reactor form complete eddy current state under negative pressure state, liquid in the reactor is realized stirring, and, reactor uses transparent nonmetallic materials, can avoid the harmful substances such as organic substance, metal ion, bulky grain to enter into polishing fluid, thereby reduce the concentration of metal ion, avoid the appearance of Ludox coacervation.
2. activating agent adds under negative pressure eddy current state gradually among the preparation method of the present invention, and the FA/O activating agent coats the Nano silica sol that adds, and can improve the ability to bear that Ludox changes acid-base value, and gel or dissolving do not occur when adding amine alkali is regulated the pH value.
3. the reactor raw material of selecting are free of contamination polypropylene, polyethylene, polymethyl methacrylate etc.
4. adopt high concentration, the high pH polishing fluid of present technique preparation to be convenient to transportation, to store, and can make cost, and the inventive method is simple.
Embodiment
The below further specifies the present invention with embodiment.
Embodiment 1: preparation 4000g hard disk InP substrate polishing liquid
Under negative pressure stirs, get respectively 200g amine alkali in the closed reactor, claim that ultrapure deionized water dilutes more than 50gKOH is with 250g18M Ω, 50gFA/O activating agent and 50gFA/O chelating agent suck successively, again under negative pressure with particle diameter 15-25nm nanometer SiO
2Colloidal sol 3000g sucks, and sucks while stirring at last the 400g deionized water.Get 4000g hard disk InP substrate polishing liquid after stirring under the eddy current state, after stirring, get final product can.
Embodiment 2: preparation 4000g hard disk InP substrate polishing liquid
Under negative pressure stirs, get respectively 100g amine alkali in the closed reactor, claim that ultrapure deionized water dilutes more than 25gKOH is with 125g18M Ω, 15gFA/O activating agent and 15gFA/O chelating agent suck successively, again under negative pressure with particle diameter 15-25nm nanometer SiO
2Colloidal sol 3200g sucks, and sucks while stirring at last the 520g deionized water.Get 4000g hard disk InP substrate polishing liquid after stirring under the eddy current state, after stirring, get final product can.
Claims (2)
1. the preparation method of a hard disk indium phosphide substrate CMP polishing fluid is characterized in that, carries out (% by weight) according to following steps:
(1) will clean three times under the closed reactor system usefulness deionized water negative pressure eddy current; The free of contamination polypropylene of closed reactor raw material selection, polyethylene or polymethyl methacrylate;
(2) add gradually amine alkali under negative pressure eddy current state and regulate the pH value, the amount that adds amine alkali is 1-6%, and inorganic strong alkali reagent sucks under negative pressure eddy current state gradually with the above ultra-pure water dilution of 18M Ω is rear, and the amount that adds inorganic strong alkali is 0.2-1.5%; The pH value is adjusted to 9-12;
(3) add gradually the FA/O activating agent that Jingling Microelectric Material Co., Ltd., Tianjin sells under negative pressure eddy current state, the amount that adds the FA/O activating agent is 0.3-2.5%; 20 minutes duration;
(4) add gradually the FA/O chelating agent that Jingling Microelectric Material Co., Ltd., Tianjin sells under negative pressure eddy current state, the amount that adds the FA/O chelating agent is 0.3-2.5%;
(5) with nanometer SiO
2Colloidal sol is with in the negative pressure sucting reaction device and be the eddy current state, and described colloidal sol is the SiO of particle diameter 15～100nm, decentralization＜0.001, Mohs' hardness 7
2Colloidal sol, concentration 30～50wt%;
(6) fully stir under the negative pressure eddy current state, mixing time is 5-20 minute, carries out can after evenly;
Above-mentioned each percentage by weight is all take the polishing fluid that obtains at last as benchmark.
2. the preparation method of hard disk indium phosphide substrate CMP polishing fluid according to claim 1, it is characterized in that: described step (2) amine alkali is any in AEEA, triethanolamine, the tetramethyl ammonium hydroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231656 CN102010664B (en) | 2010-07-21 | 2010-07-21 | Method for preparing CMP (Chemical Mechanical Polishing) polishing solution of hard disc indium phosphide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231656 CN102010664B (en) | 2010-07-21 | 2010-07-21 | Method for preparing CMP (Chemical Mechanical Polishing) polishing solution of hard disc indium phosphide substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102010664A CN102010664A (en) | 2011-04-13 |
| CN102010664B true CN102010664B (en) | 2013-02-27 |
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| CN 201010231656 Expired - Fee Related CN102010664B (en) | 2010-07-21 | 2010-07-21 | Method for preparing CMP (Chemical Mechanical Polishing) polishing solution of hard disc indium phosphide substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI650392B (en) | 2016-02-16 | 2019-02-11 | 美商卡博特微電子公司 | Method for polishing III to V materials |
| CN112080251B (en) * | 2020-09-01 | 2022-06-10 | 威科赛乐微电子股份有限公司 | Wafer grinding fluid and preparation method thereof |
| CN114133915B (en) * | 2021-11-26 | 2023-01-06 | 北京通美晶体技术股份有限公司 | Abrasive for polishing solution, polishing solution for fine polishing of indium phosphide crystal and preparation method of polishing solution |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101096571A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Polishing liquid for glass material and preparation method thereof |
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| KR100535074B1 (en) * | 2001-06-26 | 2005-12-07 | 주식회사 하이닉스반도체 | Slurry for Chemical Mechanical Polishing of Ruthenium and the Process for Polishing Using It |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101096571A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Polishing liquid for glass material and preparation method thereof |
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| Title |
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| JP特开2003-109922A 2003.04.11 |
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