JP2009530811A5 - - Google Patents
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- Publication number
- JP2009530811A5 JP2009530811A5 JP2009500376A JP2009500376A JP2009530811A5 JP 2009530811 A5 JP2009530811 A5 JP 2009530811A5 JP 2009500376 A JP2009500376 A JP 2009500376A JP 2009500376 A JP2009500376 A JP 2009500376A JP 2009530811 A5 JP2009530811 A5 JP 2009530811A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- substrate
- chemical mechanical
- polishing composition
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 48
- 239000000758 substrate Substances 0.000 claims 20
- 239000000126 substance Substances 0.000 claims 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 14
- 238000000034 method Methods 0.000 claims 8
- 239000000377 silicon dioxide Substances 0.000 claims 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 239000003795 chemical substances by application Substances 0.000 claims 3
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 claims 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims 2
- 239000004471 Glycine Substances 0.000 claims 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 2
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 claims 2
- 229960002510 mandelic acid Drugs 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- WLJVXDMOQOGPHL-UHFFFAOYSA-N phenylacetic acid Chemical compound OC(=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-UHFFFAOYSA-N 0.000 claims 2
- WLJVXDMOQOGPHL-PPJXEINESA-N 2-phenylacetic acid Chemical compound O[14C](=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-PPJXEINESA-N 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- LEHOTFFKMJEONL-UHFFFAOYSA-N Uric Acid Chemical compound N1C(=O)NC(=O)C2=C1NC(=O)N2 LEHOTFFKMJEONL-UHFFFAOYSA-N 0.000 claims 1
- TVWHNULVHGKJHS-UHFFFAOYSA-N Uric acid Natural products N1C(=O)NC(=O)C2NC(=O)NC21 TVWHNULVHGKJHS-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- -1 aryl dicarboxylic acid Chemical compound 0.000 claims 1
- IOUCSUBTZWXKTA-UHFFFAOYSA-N dipotassium;dioxido(oxo)tin Chemical compound [K+].[K+].[O-][Sn]([O-])=O IOUCSUBTZWXKTA-UHFFFAOYSA-N 0.000 claims 1
- 229960003424 phenylacetic acid Drugs 0.000 claims 1
- 239000003279 phenylacetic acid Substances 0.000 claims 1
- 229940116269 uric acid Drugs 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/374,238 US20070209287A1 (en) | 2006-03-13 | 2006-03-13 | Composition and method to polish silicon nitride |
| US11/374,238 | 2006-03-13 | ||
| PCT/US2007/005594 WO2007108926A2 (en) | 2006-03-13 | 2007-03-06 | Composition and method to polish silicon nitride |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009530811A JP2009530811A (ja) | 2009-08-27 |
| JP2009530811A5 true JP2009530811A5 (enExample) | 2010-04-15 |
| JP5524607B2 JP5524607B2 (ja) | 2014-06-18 |
Family
ID=38436739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009500376A Active JP5524607B2 (ja) | 2006-03-13 | 2007-03-06 | 窒化ケイ素及び酸化ケイ素を含む基材を研磨するための組成物、化学機械研磨用システム及び方法 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20070209287A1 (enExample) |
| EP (1) | EP1994107A2 (enExample) |
| JP (1) | JP5524607B2 (enExample) |
| KR (1) | KR101371939B1 (enExample) |
| CN (2) | CN101389722B (enExample) |
| IL (1) | IL192527A (enExample) |
| MY (1) | MY153685A (enExample) |
| SG (1) | SG170108A1 (enExample) |
| TW (1) | TWI363797B (enExample) |
| WO (1) | WO2007108926A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
| SG10201605686XA (en) * | 2008-02-01 | 2016-08-30 | Fujimi Inc | Polishing Composition And Polishing Method Using The Same |
| JP5441362B2 (ja) * | 2008-05-30 | 2014-03-12 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| CN101747841A (zh) * | 2008-12-05 | 2010-06-23 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| CN104845532B (zh) * | 2009-06-22 | 2017-10-03 | 嘉柏微电子材料股份公司 | 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法 |
| KR101091030B1 (ko) * | 2010-04-08 | 2011-12-09 | 이화다이아몬드공업 주식회사 | 감소된 마찰력을 갖는 패드 컨디셔너 제조방법 |
| US20140197356A1 (en) * | 2011-12-21 | 2014-07-17 | Cabot Microelectronics Corporation | Cmp compositions and methods for suppressing polysilicon removal rates |
| CN103387796B (zh) | 2012-05-10 | 2015-08-12 | 气体产品与化学公司 | 具有化学添加剂的化学机械抛光组合物及其使用方法 |
| US8999193B2 (en) | 2012-05-10 | 2015-04-07 | Air Products And Chemicals, Inc. | Chemical mechanical polishing composition having chemical additives and methods for using same |
| US9633863B2 (en) | 2012-07-11 | 2017-04-25 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US10406652B2 (en) | 2014-03-28 | 2019-09-10 | Fujimi Incorporated | Polishing composition and polishing method using the same |
| US9583359B2 (en) | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| CN105802511A (zh) * | 2014-12-29 | 2016-07-27 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其应用 |
| CN108117838B (zh) * | 2016-11-29 | 2021-09-17 | 安集微电子科技（上海）股份有限公司 | 一种氮化硅化学机械抛光液 |
| US11999875B2 (en) * | 2019-06-06 | 2024-06-04 | Resonac Corporation | Polishing solution and polishing method |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5230833A (en) * | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US6546939B1 (en) * | 1990-11-05 | 2003-04-15 | Ekc Technology, Inc. | Post clean treatment |
| US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) * | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) * | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) * | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5964643A (en) * | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) * | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5872633A (en) * | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US5773364A (en) * | 1996-10-21 | 1998-06-30 | Motorola, Inc. | Method for using ammonium salt slurries for chemical mechanical polishing (CMP) |
| US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| US6635562B2 (en) * | 1998-09-15 | 2003-10-21 | Micron Technology, Inc. | Methods and solutions for cleaning polished aluminum-containing layers |
| JP4095731B2 (ja) * | 1998-11-09 | 2008-06-04 | 株式会社ルネサステクノロジ | 半導体装置の製造方法及び半導体装置 |
| JP4053165B2 (ja) * | 1998-12-01 | 2008-02-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| US6228727B1 (en) * | 1999-09-27 | 2001-05-08 | Chartered Semiconductor Manufacturing, Ltd. | Method to form shallow trench isolations with rounded corners and reduced trench oxide recess |
| US20040055993A1 (en) * | 1999-10-12 | 2004-03-25 | Moudgil Brij M. | Materials and methods for control of stability and rheological behavior of particulate suspensions |
| US6524168B2 (en) * | 2000-06-15 | 2003-02-25 | Rodel Holdings, Inc | Composition and method for polishing semiconductors |
| US6468913B1 (en) * | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
| US6872329B2 (en) * | 2000-07-28 | 2005-03-29 | Applied Materials, Inc. | Chemical mechanical polishing composition and process |
| JP2002075927A (ja) * | 2000-08-24 | 2002-03-15 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Ｎｅｃエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
| WO2002067309A1 (en) * | 2001-02-20 | 2002-08-29 | Hitachi Chemical Co., Ltd. | Polishing compound and method for polishing substrate |
| US6521523B2 (en) * | 2001-06-15 | 2003-02-18 | Silicon Integrated Systems Corp. | Method for forming selective protection layers on copper interconnects |
| CN100378145C (zh) * | 2001-06-21 | 2008-04-02 | 花王株式会社 | 研磨液组合物 |
| US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US20030176151A1 (en) * | 2002-02-12 | 2003-09-18 | Applied Materials, Inc. | STI polish enhancement using fixed abrasives with amino acid additives |
| US6755721B2 (en) * | 2002-02-22 | 2004-06-29 | Saint-Gobain Ceramics And Plastics, Inc. | Chemical mechanical polishing of nickel phosphorous alloys |
| KR100442873B1 (ko) * | 2002-02-28 | 2004-08-02 | 삼성전자주식회사 | 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법 |
| US6604987B1 (en) * | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US20040123528A1 (en) * | 2002-12-30 | 2004-07-01 | Jung Jong Goo | CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the same |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US6918820B2 (en) * | 2003-04-11 | 2005-07-19 | Eastman Kodak Company | Polishing compositions comprising polymeric cores having inorganic surface particles and method of use |
| JP4285480B2 (ja) * | 2003-05-28 | 2009-06-24 | 日立化成工業株式会社 | 研磨剤及び研磨方法 |
| US6964600B2 (en) * | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
| US6971945B2 (en) * | 2004-02-23 | 2005-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-step polishing solution for chemical mechanical planarization |
| US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
-
2006
- 2006-03-13 US US11/374,238 patent/US20070209287A1/en not_active Abandoned
-
2007
- 2007-03-06 JP JP2009500376A patent/JP5524607B2/ja active Active
- 2007-03-06 MY MYPI20083545A patent/MY153685A/en unknown
- 2007-03-06 EP EP07752308A patent/EP1994107A2/en not_active Withdrawn
- 2007-03-06 WO PCT/US2007/005594 patent/WO2007108926A2/en not_active Ceased
- 2007-03-06 KR KR1020087024838A patent/KR101371939B1/ko active Active
- 2007-03-06 SG SG201101794-4A patent/SG170108A1/en unknown
- 2007-03-06 CN CN2007800065485A patent/CN101389722B/zh active Active
- 2007-03-06 CN CN201210021422.8A patent/CN102604541B/zh not_active Expired - Fee Related
- 2007-03-13 TW TW096108591A patent/TWI363797B/zh active
-
2008
- 2008-06-30 IL IL192527A patent/IL192527A/en not_active IP Right Cessation