JP5524607B2 - 窒化ケイ素及び酸化ケイ素を含む基材を研磨するための組成物、化学機械研磨用システム及び方法 - Google Patents

窒化ケイ素及び酸化ケイ素を含む基材を研磨するための組成物、化学機械研磨用システム及び方法 Download PDF

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Publication number
JP5524607B2
JP5524607B2 JP2009500376A JP2009500376A JP5524607B2 JP 5524607 B2 JP5524607 B2 JP 5524607B2 JP 2009500376 A JP2009500376 A JP 2009500376A JP 2009500376 A JP2009500376 A JP 2009500376A JP 5524607 B2 JP5524607 B2 JP 5524607B2
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Prior art keywords
polishing
polishing composition
substrate
acid
composition
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Japanese (ja)
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JP2009530811A (ja
JP2009530811A5 (enExample
Inventor
チェン，チャン
バカッシイ，ロバート
カーター，フィリップ
ダイサード，ジョフリー
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009500376A 2006-03-13 2007-03-06 窒化ケイ素及び酸化ケイ素を含む基材を研磨するための組成物、化学機械研磨用システム及び方法 Active JP5524607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/374,238 US20070209287A1 (en) 2006-03-13 2006-03-13 Composition and method to polish silicon nitride
US11/374,238 2006-03-13
PCT/US2007/005594 WO2007108926A2 (en) 2006-03-13 2007-03-06 Composition and method to polish silicon nitride

Publications (3)

Publication Number Publication Date
JP2009530811A JP2009530811A (ja) 2009-08-27
JP2009530811A5 JP2009530811A5 (enExample) 2010-04-15
JP5524607B2 true JP5524607B2 (ja) 2014-06-18

Family

ID=38436739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009500376A Active JP5524607B2 (ja) 2006-03-13 2007-03-06 窒化ケイ素及び酸化ケイ素を含む基材を研磨するための組成物、化学機械研磨用システム及び方法

Country Status (10)

Country Link
US (1) US20070209287A1 (enExample)
EP (1) EP1994107A2 (enExample)
JP (1) JP5524607B2 (enExample)
KR (1) KR101371939B1 (enExample)
CN (2) CN101389722B (enExample)
IL (1) IL192527A (enExample)
MY (1) MY153685A (enExample)
SG (1) SG170108A1 (enExample)
TW (1) TWI363797B (enExample)
WO (1) WO2007108926A2 (enExample)

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CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液
CN104845532B (zh) * 2009-06-22 2017-10-03 嘉柏微电子材料股份公司 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法
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US20140197356A1 (en) * 2011-12-21 2014-07-17 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates
CN103387796B (zh) 2012-05-10 2015-08-12 气体产品与化学公司 具有化学添加剂的化学机械抛光组合物及其使用方法
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
US9633863B2 (en) 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US10406652B2 (en) 2014-03-28 2019-09-10 Fujimi Incorporated Polishing composition and polishing method using the same
US9583359B2 (en) 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
CN105802511A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN108117838B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
US11999875B2 (en) * 2019-06-06 2024-06-04 Resonac Corporation Polishing solution and polishing method

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Also Published As

Publication number Publication date
CN102604541B (zh) 2015-05-20
IL192527A (en) 2013-08-29
CN102604541A (zh) 2012-07-25
TW200740970A (en) 2007-11-01
KR20080106575A (ko) 2008-12-08
WO2007108926A2 (en) 2007-09-27
CN101389722B (zh) 2012-09-05
WO2007108926A3 (en) 2008-03-20
TWI363797B (en) 2012-05-11
MY153685A (en) 2015-03-13
SG170108A1 (en) 2011-04-29
CN101389722A (zh) 2009-03-18
KR101371939B1 (ko) 2014-03-07
US20070209287A1 (en) 2007-09-13
JP2009530811A (ja) 2009-08-27
IL192527A0 (en) 2009-02-11
EP1994107A2 (en) 2008-11-26

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