JP2010512030A5 - - Google Patents
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- Publication number
- JP2010512030A5 JP2010512030A5 JP2009540273A JP2009540273A JP2010512030A5 JP 2010512030 A5 JP2010512030 A5 JP 2010512030A5 JP 2009540273 A JP2009540273 A JP 2009540273A JP 2009540273 A JP2009540273 A JP 2009540273A JP 2010512030 A5 JP2010512030 A5 JP 2010512030A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing composition
- substrate
- polishing
- composition according
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 claims 25
- 239000000203 mixture Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 229920000642 polymer Polymers 0.000 claims 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- 239000007800 oxidant agent Substances 0.000 claims 3
- 239000000126 substance Substances 0.000 claims 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910001424 calcium ion Inorganic materials 0.000 claims 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229920000536 2-Acrylamido-2-methylpropane sulfonic acid Polymers 0.000 claims 1
- XHZPRMZZQOIPDS-UHFFFAOYSA-N 2-Methyl-2-[(1-oxo-2-propenyl)amino]-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(C)(C)NC(=O)C=C XHZPRMZZQOIPDS-UHFFFAOYSA-N 0.000 claims 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 claims 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims 1
- 150000007524 organic acids Chemical class 0.000 claims 1
- 150000002978 peroxides Chemical class 0.000 claims 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims 1
- 238000007517 polishing process Methods 0.000 claims 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000001384 succinic acid Substances 0.000 claims 1
- 239000011975 tartaric acid Substances 0.000 claims 1
- 235000002906 tartaric acid Nutrition 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/634,576 US9343330B2 (en) | 2006-12-06 | 2006-12-06 | Compositions for polishing aluminum/copper and titanium in damascene structures |
| US11/634,576 | 2006-12-06 | ||
| PCT/US2007/024902 WO2008070113A1 (en) | 2006-12-06 | 2007-12-04 | Compositions for polishing aluminum/copper and titanium in damascene structures |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010512030A JP2010512030A (ja) | 2010-04-15 |
| JP2010512030A5 true JP2010512030A5 (enExample) | 2011-01-27 |
| JP5491190B2 JP5491190B2 (ja) | 2014-05-14 |
Family
ID=39492555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009540273A Active JP5491190B2 (ja) | 2006-12-06 | 2007-12-04 | ダマシン構造における、アルミニウム／銅及びチタンを研磨するための組成物 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9343330B2 (enExample) |
| EP (1) | EP2092036B1 (enExample) |
| JP (1) | JP5491190B2 (enExample) |
| KR (1) | KR101224321B1 (enExample) |
| CN (1) | CN101553550B (enExample) |
| SG (1) | SG177186A1 (enExample) |
| TW (1) | TWI398473B (enExample) |
| WO (1) | WO2008070113A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8623766B2 (en) * | 2011-09-20 | 2014-01-07 | Cabot Microelectronics Corporation | Composition and method for polishing aluminum semiconductor substrates |
| JP5957292B2 (ja) | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法 |
| KR20150036518A (ko) * | 2012-07-17 | 2015-04-07 | 가부시키가이샤 후지미인코퍼레이티드 | 합금 재료 연마용 조성물 및 그것을 사용한 합금 재료의 제조 방법 |
| US8961807B2 (en) * | 2013-03-15 | 2015-02-24 | Cabot Microelectronics Corporation | CMP compositions with low solids content and methods related thereto |
| TWI561620B (en) * | 2014-06-20 | 2016-12-11 | Cabot Microelectronics Corp | Cmp slurry compositions and methods for aluminum polishing |
| US10886250B2 (en) | 2015-07-10 | 2021-01-05 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
| KR102447178B1 (ko) * | 2015-09-01 | 2022-09-26 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| TWI822659B (zh) | 2016-10-27 | 2023-11-21 | 美商艾德亞半導體科技有限責任公司 | 用於低溫接合的結構和方法 |
| WO2018123875A1 (ja) * | 2016-12-26 | 2018-07-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| US10515913B2 (en) | 2017-03-17 | 2019-12-24 | Invensas Bonding Technologies, Inc. | Multi-metal contact structure |
| US10446441B2 (en) | 2017-06-05 | 2019-10-15 | Invensas Corporation | Flat metal features for microelectronics applications |
| US10840205B2 (en) | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
| US11043151B2 (en) * | 2017-10-03 | 2021-06-22 | Cmc Materials, Inc. | Surface treated abrasive particles for tungsten buff applications |
| US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
| US10790262B2 (en) | 2018-04-11 | 2020-09-29 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
| US11244916B2 (en) | 2018-04-11 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Low temperature bonded structures |
| EP3807927A4 (en) | 2018-06-13 | 2022-02-23 | Invensas Bonding Technologies, Inc. | TSV AS PAD |
| US11393779B2 (en) | 2018-06-13 | 2022-07-19 | Invensas Bonding Technologies, Inc. | Large metal pads over TSV |
| US11011494B2 (en) | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
| US11158573B2 (en) | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
| US11244920B2 (en) | 2018-12-18 | 2022-02-08 | Invensas Bonding Technologies, Inc. | Method and structures for low temperature device bonding |
| WO2021236361A1 (en) | 2020-05-19 | 2021-11-25 | Invensas Bonding Technologies, Inc. | Laterally unconfined structure |
| US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
| EP4268273A4 (en) | 2020-12-28 | 2024-10-23 | Adeia Semiconductor Bonding Technologies Inc. | Structures with through-substrate vias and methods for forming the same |
| WO2022147430A1 (en) | 2020-12-28 | 2022-07-07 | Invensas Bonding Technologies, Inc. | Structures with through-substrate vias and methods for forming the same |
| KR20230126736A (ko) | 2020-12-30 | 2023-08-30 | 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 | 전도성 특징부를 갖는 구조 및 그 형성방법 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) * | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) * | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| JP3313505B2 (ja) * | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5893796A (en) * | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
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| US5838447A (en) * | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
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| US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
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| IL151862A0 (en) * | 2000-04-07 | 2003-04-10 | Cabot Microelectronics Corp | Integrated chemical-mechanical polishing |
| KR100400030B1 (ko) * | 2000-06-05 | 2003-09-29 | 삼성전자주식회사 | 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법 |
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| US20050079803A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Chemical-mechanical planarization composition having PVNO and associated method for use |
| US20050076579A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Bicine/tricine containing composition and method for chemical-mechanical planarization |
| US7514363B2 (en) * | 2003-10-23 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use |
| US7563383B2 (en) * | 2004-10-12 | 2009-07-21 | Cabot Mircroelectronics Corporation | CMP composition with a polymer additive for polishing noble metals |
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-
2006
- 2006-12-06 US US11/634,576 patent/US9343330B2/en active Active
-
2007
- 2007-11-28 TW TW096145221A patent/TWI398473B/zh active
- 2007-12-04 CN CN2007800454360A patent/CN101553550B/zh active Active
- 2007-12-04 JP JP2009540273A patent/JP5491190B2/ja active Active
- 2007-12-04 WO PCT/US2007/024902 patent/WO2008070113A1/en not_active Ceased
- 2007-12-04 EP EP07867624.4A patent/EP2092036B1/en active Active
- 2007-12-04 SG SG2011089943A patent/SG177186A1/en unknown
- 2007-12-04 KR KR1020097013921A patent/KR101224321B1/ko active Active