CN101553550B - 用于抛光镶嵌结构中的铝/铜及钛的组合物 - Google Patents

用于抛光镶嵌结构中的铝/铜及钛的组合物 Download PDF

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Publication number
CN101553550B
CN101553550B CN2007800454360A CN200780045436A CN101553550B CN 101553550 B CN101553550 B CN 101553550B CN 2007800454360 A CN2007800454360 A CN 2007800454360A CN 200780045436 A CN200780045436 A CN 200780045436A CN 101553550 B CN101553550 B CN 101553550B
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China
Prior art keywords
polishing composition
polishing
substrate
titanium
weight
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CN2007800454360A
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English (en)
Chinese (zh)
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CN101553550A (zh
Inventor
弗拉斯塔·布鲁西克
周仁杰
保罗·菲尼
克里斯托弗·汤普森
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CMC Materials LLC
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Cabot Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2007800454360A 2006-12-06 2007-12-04 用于抛光镶嵌结构中的铝/铜及钛的组合物 Active CN101553550B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/634,576 US9343330B2 (en) 2006-12-06 2006-12-06 Compositions for polishing aluminum/copper and titanium in damascene structures
US11/634,576 2006-12-06
PCT/US2007/024902 WO2008070113A1 (en) 2006-12-06 2007-12-04 Compositions for polishing aluminum/copper and titanium in damascene structures

Publications (2)

Publication Number Publication Date
CN101553550A CN101553550A (zh) 2009-10-07
CN101553550B true CN101553550B (zh) 2012-11-07

Family

ID=39492555

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800454360A Active CN101553550B (zh) 2006-12-06 2007-12-04 用于抛光镶嵌结构中的铝/铜及钛的组合物

Country Status (8)

Country Link
US (1) US9343330B2 (enExample)
EP (1) EP2092036B1 (enExample)
JP (1) JP5491190B2 (enExample)
KR (1) KR101224321B1 (enExample)
CN (1) CN101553550B (enExample)
SG (1) SG177186A1 (enExample)
TW (1) TWI398473B (enExample)
WO (1) WO2008070113A1 (enExample)

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US8961807B2 (en) * 2013-03-15 2015-02-24 Cabot Microelectronics Corporation CMP compositions with low solids content and methods related thereto
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US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
KR102447178B1 (ko) * 2015-09-01 2022-09-26 삼성전자주식회사 반도체 장치의 제조 방법
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WO2018123875A1 (ja) * 2016-12-26 2018-07-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US10515913B2 (en) 2017-03-17 2019-12-24 Invensas Bonding Technologies, Inc. Multi-metal contact structure
US10446441B2 (en) 2017-06-05 2019-10-15 Invensas Corporation Flat metal features for microelectronics applications
US10840205B2 (en) 2017-09-24 2020-11-17 Invensas Bonding Technologies, Inc. Chemical mechanical polishing for hybrid bonding
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US10790262B2 (en) 2018-04-11 2020-09-29 Invensas Bonding Technologies, Inc. Low temperature bonded structures
US11244916B2 (en) 2018-04-11 2022-02-08 Invensas Bonding Technologies, Inc. Low temperature bonded structures
EP3807927A4 (en) 2018-06-13 2022-02-23 Invensas Bonding Technologies, Inc. TSV AS PAD
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
US11158573B2 (en) 2018-10-22 2021-10-26 Invensas Bonding Technologies, Inc. Interconnect structures
US11244920B2 (en) 2018-12-18 2022-02-08 Invensas Bonding Technologies, Inc. Method and structures for low temperature device bonding
WO2021236361A1 (en) 2020-05-19 2021-11-25 Invensas Bonding Technologies, Inc. Laterally unconfined structure
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die
EP4268273A4 (en) 2020-12-28 2024-10-23 Adeia Semiconductor Bonding Technologies Inc. Structures with through-substrate vias and methods for forming the same
WO2022147430A1 (en) 2020-12-28 2022-07-07 Invensas Bonding Technologies, Inc. Structures with through-substrate vias and methods for forming the same
KR20230126736A (ko) 2020-12-30 2023-08-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 전도성 특징부를 갖는 구조 및 그 형성방법

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CN1849378A (zh) * 2003-09-11 2006-10-18 卡博特微电子公司 化学－机械抛光组合物及其使用方法

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CN1849378A (zh) * 2003-09-11 2006-10-18 卡博特微电子公司 化学－机械抛光组合物及其使用方法

Also Published As

Publication number Publication date
TWI398473B (zh) 2013-06-11
EP2092036A1 (en) 2009-08-26
JP5491190B2 (ja) 2014-05-14
JP2010512030A (ja) 2010-04-15
KR20090107026A (ko) 2009-10-12
US20080134585A1 (en) 2008-06-12
EP2092036B1 (en) 2015-09-09
TW200902612A (en) 2009-01-16
WO2008070113A1 (en) 2008-06-12
SG177186A1 (en) 2012-01-30
EP2092036A4 (en) 2011-02-09
CN101553550A (zh) 2009-10-07
US9343330B2 (en) 2016-05-17
KR101224321B1 (ko) 2013-01-18

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