KR101224321B1 - 다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물 - Google Patents

다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물 Download PDF

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Publication number
KR101224321B1
KR101224321B1 KR1020097013921A KR20097013921A KR101224321B1 KR 101224321 B1 KR101224321 B1 KR 101224321B1 KR 1020097013921 A KR1020097013921 A KR 1020097013921A KR 20097013921 A KR20097013921 A KR 20097013921A KR 101224321 B1 KR101224321 B1 KR 101224321B1
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South Korea
Prior art keywords
polishing composition
substrate
polishing
aluminum
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Korean (ko)
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KR20090107026A (ko
Inventor
블라스타 브러식
렌지 조우
폴 피니
크리스토퍼 톰슨
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020097013921A 2006-12-06 2007-12-04 다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물 Active KR101224321B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/634,576 US9343330B2 (en) 2006-12-06 2006-12-06 Compositions for polishing aluminum/copper and titanium in damascene structures
US11/634,576 2006-12-06
PCT/US2007/024902 WO2008070113A1 (en) 2006-12-06 2007-12-04 Compositions for polishing aluminum/copper and titanium in damascene structures

Publications (2)

Publication Number Publication Date
KR20090107026A KR20090107026A (ko) 2009-10-12
KR101224321B1 true KR101224321B1 (ko) 2013-01-18

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KR1020097013921A Active KR101224321B1 (ko) 2006-12-06 2007-12-04 다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물

Country Status (8)

Country Link
US (1) US9343330B2 (enExample)
EP (1) EP2092036B1 (enExample)
JP (1) JP5491190B2 (enExample)
KR (1) KR101224321B1 (enExample)
CN (1) CN101553550B (enExample)
SG (1) SG177186A1 (enExample)
TW (1) TWI398473B (enExample)
WO (1) WO2008070113A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8623766B2 (en) * 2011-09-20 2014-01-07 Cabot Microelectronics Corporation Composition and method for polishing aluminum semiconductor substrates
JP5957292B2 (ja) 2012-05-18 2016-07-27 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
KR20150036518A (ko) * 2012-07-17 2015-04-07 가부시키가이샤 후지미인코퍼레이티드 합금 재료 연마용 조성물 및 그것을 사용한 합금 재료의 제조 방법
US8961807B2 (en) * 2013-03-15 2015-02-24 Cabot Microelectronics Corporation CMP compositions with low solids content and methods related thereto
TWI561620B (en) * 2014-06-20 2016-12-11 Cabot Microelectronics Corp Cmp slurry compositions and methods for aluminum polishing
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
KR102447178B1 (ko) * 2015-09-01 2022-09-26 삼성전자주식회사 반도체 장치의 제조 방법
TWI822659B (zh) 2016-10-27 2023-11-21 美商艾德亞半導體科技有限責任公司 用於低溫接合的結構和方法
WO2018123875A1 (ja) * 2016-12-26 2018-07-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US10515913B2 (en) 2017-03-17 2019-12-24 Invensas Bonding Technologies, Inc. Multi-metal contact structure
US10446441B2 (en) 2017-06-05 2019-10-15 Invensas Corporation Flat metal features for microelectronics applications
US10840205B2 (en) 2017-09-24 2020-11-17 Invensas Bonding Technologies, Inc. Chemical mechanical polishing for hybrid bonding
US11043151B2 (en) * 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
US11056348B2 (en) 2018-04-05 2021-07-06 Invensas Bonding Technologies, Inc. Bonding surfaces for microelectronics
US10790262B2 (en) 2018-04-11 2020-09-29 Invensas Bonding Technologies, Inc. Low temperature bonded structures
US11244916B2 (en) 2018-04-11 2022-02-08 Invensas Bonding Technologies, Inc. Low temperature bonded structures
EP3807927A4 (en) 2018-06-13 2022-02-23 Invensas Bonding Technologies, Inc. TSV AS PAD
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
US11158573B2 (en) 2018-10-22 2021-10-26 Invensas Bonding Technologies, Inc. Interconnect structures
US11244920B2 (en) 2018-12-18 2022-02-08 Invensas Bonding Technologies, Inc. Method and structures for low temperature device bonding
WO2021236361A1 (en) 2020-05-19 2021-11-25 Invensas Bonding Technologies, Inc. Laterally unconfined structure
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die
EP4268273A4 (en) 2020-12-28 2024-10-23 Adeia Semiconductor Bonding Technologies Inc. Structures with through-substrate vias and methods for forming the same
WO2022147430A1 (en) 2020-12-28 2022-07-07 Invensas Bonding Technologies, Inc. Structures with through-substrate vias and methods for forming the same
KR20230126736A (ko) 2020-12-30 2023-08-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 전도성 특징부를 갖는 구조 및 그 형성방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6083840A (en) 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US20050056368A1 (en) 2003-09-11 2005-03-17 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
JP3450247B2 (ja) * 1999-12-28 2003-09-22 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
IL151862A0 (en) * 2000-04-07 2003-04-10 Cabot Microelectronics Corp Integrated chemical-mechanical polishing
KR100400030B1 (ko) * 2000-06-05 2003-09-29 삼성전자주식회사 금속막의 화학 및 기계적 연마용 슬러리 및 그 제조방법과상기 슬러리를 이용한 반도체 소자의 금속 배선 형성 방법
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US6540935B2 (en) * 2001-04-05 2003-04-01 Samsung Electronics Co., Ltd. Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
US20030104770A1 (en) * 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040159050A1 (en) * 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7132058B2 (en) * 2002-01-24 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tungsten polishing solution
JP4187497B2 (ja) * 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
US6841480B2 (en) * 2002-02-04 2005-01-11 Infineon Technologies Ag Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US20030189186A1 (en) * 2002-03-29 2003-10-09 Everlight Usa, Inc. Chemical-mechanical polishing composition for metal layers
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
JP2004172606A (ja) * 2002-11-08 2004-06-17 Sumitomo Chem Co Ltd 金属研磨材組成物及び研磨方法
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20040216388A1 (en) * 2003-03-17 2004-11-04 Sharad Mathur Slurry compositions for use in a chemical-mechanical planarization process
US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US20050079803A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition having PVNO and associated method for use
US20050076579A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Bicine/tricine containing composition and method for chemical-mechanical planarization
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US20060249395A1 (en) 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6083840A (en) 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US20050056368A1 (en) 2003-09-11 2005-03-17 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same

Also Published As

Publication number Publication date
CN101553550B (zh) 2012-11-07
TWI398473B (zh) 2013-06-11
EP2092036A1 (en) 2009-08-26
JP5491190B2 (ja) 2014-05-14
JP2010512030A (ja) 2010-04-15
KR20090107026A (ko) 2009-10-12
US20080134585A1 (en) 2008-06-12
EP2092036B1 (en) 2015-09-09
TW200902612A (en) 2009-01-16
WO2008070113A1 (en) 2008-06-12
SG177186A1 (en) 2012-01-30
EP2092036A4 (en) 2011-02-09
CN101553550A (zh) 2009-10-07
US9343330B2 (en) 2016-05-17

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