JP5491190B2 - ダマシン構造における、アルミニウム／銅及びチタンを研磨するための組成物 - Google Patents

ダマシン構造における、アルミニウム／銅及びチタンを研磨するための組成物 Download PDF

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Publication number
JP5491190B2
JP5491190B2 JP2009540273A JP2009540273A JP5491190B2 JP 5491190 B2 JP5491190 B2 JP 5491190B2 JP 2009540273 A JP2009540273 A JP 2009540273A JP 2009540273 A JP2009540273 A JP 2009540273A JP 5491190 B2 JP5491190 B2 JP 5491190B2
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Japan
Prior art keywords
polishing composition
polishing
substrate
composition according
aluminum
Prior art date
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JP2009540273A
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English (en)
Japanese (ja)
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JP2010512030A (ja
JP2010512030A5 (enExample
Inventor
ブルーシック，ブラスタ
チョウ，レンチエ
フィーニー，ポール
トンプソン，クリストファー
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CMC Materials LLC
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Cabot Microelectronics Corp
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Publication of JP2010512030A5 publication Critical patent/JP2010512030A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009540273A 2006-12-06 2007-12-04 ダマシン構造における、アルミニウム／銅及びチタンを研磨するための組成物 Active JP5491190B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/634,576 US9343330B2 (en) 2006-12-06 2006-12-06 Compositions for polishing aluminum/copper and titanium in damascene structures
US11/634,576 2006-12-06
PCT/US2007/024902 WO2008070113A1 (en) 2006-12-06 2007-12-04 Compositions for polishing aluminum/copper and titanium in damascene structures

Publications (3)

Publication Number Publication Date
JP2010512030A JP2010512030A (ja) 2010-04-15
JP2010512030A5 JP2010512030A5 (enExample) 2011-01-27
JP5491190B2 true JP5491190B2 (ja) 2014-05-14

Family

ID=39492555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009540273A Active JP5491190B2 (ja) 2006-12-06 2007-12-04 ダマシン構造における、アルミニウム／銅及びチタンを研磨するための組成物

Country Status (8)

Country Link
US (1) US9343330B2 (enExample)
EP (1) EP2092036B1 (enExample)
JP (1) JP5491190B2 (enExample)
KR (1) KR101224321B1 (enExample)
CN (1) CN101553550B (enExample)
SG (1) SG177186A1 (enExample)
TW (1) TWI398473B (enExample)
WO (1) WO2008070113A1 (enExample)

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JP5957292B2 (ja) 2012-05-18 2016-07-27 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法
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TWI561620B (en) * 2014-06-20 2016-12-11 Cabot Microelectronics Corp Cmp slurry compositions and methods for aluminum polishing
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
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WO2018123875A1 (ja) * 2016-12-26 2018-07-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US10515913B2 (en) 2017-03-17 2019-12-24 Invensas Bonding Technologies, Inc. Multi-metal contact structure
US10446441B2 (en) 2017-06-05 2019-10-15 Invensas Corporation Flat metal features for microelectronics applications
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EP3807927A4 (en) 2018-06-13 2022-02-23 Invensas Bonding Technologies, Inc. TSV AS PAD
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
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US11244920B2 (en) 2018-12-18 2022-02-08 Invensas Bonding Technologies, Inc. Method and structures for low temperature device bonding
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Also Published As

Publication number Publication date
CN101553550B (zh) 2012-11-07
TWI398473B (zh) 2013-06-11
EP2092036A1 (en) 2009-08-26
JP2010512030A (ja) 2010-04-15
KR20090107026A (ko) 2009-10-12
US20080134585A1 (en) 2008-06-12
EP2092036B1 (en) 2015-09-09
TW200902612A (en) 2009-01-16
WO2008070113A1 (en) 2008-06-12
SG177186A1 (en) 2012-01-30
EP2092036A4 (en) 2011-02-09
CN101553550A (zh) 2009-10-07
US9343330B2 (en) 2016-05-17
KR101224321B1 (ko) 2013-01-18

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