JP5576112B2 - ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 - Google Patents
ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 Download PDFInfo
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- JP5576112B2 JP5576112B2 JP2009501436A JP2009501436A JP5576112B2 JP 5576112 B2 JP5576112 B2 JP 5576112B2 JP 2009501436 A JP2009501436 A JP 2009501436A JP 2009501436 A JP2009501436 A JP 2009501436A JP 5576112 B2 JP5576112 B2 JP 5576112B2
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- JP
- Japan
- Prior art keywords
- polishing composition
- polishing
- substrate
- chemical mechanical
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Description
本例は、本発明の研磨用組成物を用いてタンタル、銅及び誘電酸化物の除去速度に関するヨウ素酸塩濃度の効果を評価するものである。
本例は、本発明の研磨用組成物を用いてタンタル、銅及び誘電酸化物の除去速度に関する研磨剤濃度の効果を評価するものである。
本例は、pHに関する材料除去速度の依存性を評価するものである。
本例は、本発明の研磨用組成物を用いてタンタル及び銅の除去速度に関する窒素含有化合物の効果を評価するものである。
本例は、タンタルの除去速度を向上させるための、ヨウ素酸塩と窒素含有化合物、例えば、BTAとの間の相乗作用を評価するものである。
本例は、本発明の組成物中の様々な窒素含有化合物の有効性を評価するものである。
本例は、本発明の組成物中の様々な研磨剤の有効性を評価するものである。
Claims (6)
- 基材を研磨するための化学機械研磨用組成物であって、
(a)25nm〜80nmの平均粒子サイズを有する0.25wt%〜0.75wt%のコロイドシリカの研磨剤と、
(b)0.05wt%〜0.1wt%のヨウ素酸イオンと、
(c)0.05wt%〜0.1wt%の1H−1,2,3−ベンゾトリアゾールと、
(d)水を含む液体キャリヤーと
を含み、前記化学機械研磨用組成物のpHが2.4〜2.8である、基材を研磨するための化学機械研磨用組成物。 - 前記研磨剤が0.25wt%〜0.5wt%の量で存在する、請求項1に記載の化学機械研磨用組成物。
- (a)基材を用意する工程、
(b)該基材を、研磨パッド及び請求項1又は2に記載の化学機械研磨用組成物と接触させる工程、
(c)前記基材に対して前記研磨パッドを該化学機械研磨用組成物をそれらの間に置いて動かす工程、及び
(d)該基材の少なくとも一部を削って該基材を研磨する工程
を含む、基材を化学機械研磨する方法。 - 前記基材が金属層を含む、請求項3に記載の方法。
- 前記金属層がタンタルを含む、請求項4に記載の方法。
- 前記金属層が銅をさらに含む、請求項5に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/387,558 US8551202B2 (en) | 2006-03-23 | 2006-03-23 | Iodate-containing chemical-mechanical polishing compositions and methods |
US11/387,558 | 2006-03-23 | ||
PCT/US2007/005722 WO2007111813A2 (en) | 2006-03-23 | 2007-03-06 | Iodate-containing chemical-mechanical polishing compositions and methods |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009530849A JP2009530849A (ja) | 2009-08-27 |
JP2009530849A5 JP2009530849A5 (ja) | 2010-04-22 |
JP5576112B2 true JP5576112B2 (ja) | 2014-08-20 |
Family
ID=38269104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009501436A Expired - Fee Related JP5576112B2 (ja) | 2006-03-23 | 2007-03-06 | ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US8551202B2 (ja) |
EP (1) | EP1996663A2 (ja) |
JP (1) | JP5576112B2 (ja) |
KR (1) | KR101372208B1 (ja) |
CN (1) | CN101389723B (ja) |
IL (1) | IL192551A (ja) |
MY (1) | MY150410A (ja) |
SG (1) | SG170755A1 (ja) |
TW (1) | TWI358449B (ja) |
WO (1) | WO2007111813A2 (ja) |
Families Citing this family (11)
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WO2005120775A1 (en) * | 2004-06-08 | 2005-12-22 | S.O.I. Tec Silicon On Insulator Technologies | Planarization of a heteroepitaxial layer |
WO2008150012A1 (ja) * | 2007-06-08 | 2008-12-11 | Nitta Haas Incorporated | 研磨用組成物 |
US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
CN101906270A (zh) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | 一种化学机械抛光液 |
JP5141792B2 (ja) | 2010-06-29 | 2013-02-13 | 日立化成工業株式会社 | Cmp研磨液及び研磨方法 |
CN102268225B (zh) * | 2011-05-30 | 2014-03-26 | 上海百兰朵电子科技有限公司 | 永悬浮钻石研磨液 |
US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
CN103265893B (zh) * | 2013-06-04 | 2015-12-09 | 复旦大学 | 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用 |
CN105518833A (zh) * | 2013-09-10 | 2016-04-20 | 日立化成株式会社 | 悬浮液、研磨液套剂、研磨液、基体的研磨方法以及基体 |
CN107491110B (zh) * | 2017-09-20 | 2019-12-13 | 山东大学 | pH稳定且具有酸碱缓冲的氧化铝分散液及其制备方法 |
TWI761921B (zh) * | 2019-10-30 | 2022-04-21 | 南韓商Skc索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
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JP2001139937A (ja) * | 1999-11-11 | 2001-05-22 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
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-
2006
- 2006-03-23 US US11/387,558 patent/US8551202B2/en not_active Expired - Fee Related
-
2007
- 2007-03-06 MY MYPI20083710 patent/MY150410A/en unknown
- 2007-03-06 KR KR1020087025805A patent/KR101372208B1/ko not_active IP Right Cessation
- 2007-03-06 JP JP2009501436A patent/JP5576112B2/ja not_active Expired - Fee Related
- 2007-03-06 WO PCT/US2007/005722 patent/WO2007111813A2/en active Application Filing
- 2007-03-06 EP EP07752423A patent/EP1996663A2/en not_active Withdrawn
- 2007-03-06 CN CN2007800066859A patent/CN101389723B/zh not_active Expired - Fee Related
- 2007-03-06 SG SG201102048-4A patent/SG170755A1/en unknown
- 2007-03-13 TW TW096108584A patent/TWI358449B/zh not_active IP Right Cessation
-
2008
- 2008-07-01 IL IL192551A patent/IL192551A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2007111813A2 (en) | 2007-10-04 |
IL192551A0 (en) | 2009-02-11 |
EP1996663A2 (en) | 2008-12-03 |
TW200801166A (en) | 2008-01-01 |
KR101372208B1 (ko) | 2014-03-07 |
KR20080108561A (ko) | 2008-12-15 |
MY150410A (en) | 2014-01-15 |
IL192551A (en) | 2013-03-24 |
US8551202B2 (en) | 2013-10-08 |
WO2007111813A3 (en) | 2008-03-13 |
TWI358449B (en) | 2012-02-21 |
CN101389723A (zh) | 2009-03-18 |
JP2009530849A (ja) | 2009-08-27 |
US20070224919A1 (en) | 2007-09-27 |
CN101389723B (zh) | 2012-05-30 |
SG170755A1 (en) | 2011-05-30 |
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