WO2008150012A1 - 研磨用組成物 - Google Patents

研磨用組成物 Download PDF

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Publication number
WO2008150012A1
WO2008150012A1 PCT/JP2008/060571 JP2008060571W WO2008150012A1 WO 2008150012 A1 WO2008150012 A1 WO 2008150012A1 JP 2008060571 W JP2008060571 W JP 2008060571W WO 2008150012 A1 WO2008150012 A1 WO 2008150012A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing composition
polishing
less
disclosed
dishing
Prior art date
Application number
PCT/JP2008/060571
Other languages
English (en)
French (fr)
Inventor
Rika Tanaka
Haruki Nojo
Yoshiharu Ota
Original Assignee
Nitta Haas Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Incorporated filed Critical Nitta Haas Incorporated
Priority to US12/451,932 priority Critical patent/US20100163787A1/en
Priority to CN200880024544.4A priority patent/CN101743624B/zh
Priority to JP2009517925A priority patent/JP4459298B2/ja
Publication of WO2008150012A1 publication Critical patent/WO2008150012A1/ja
Priority to US14/727,467 priority patent/US20150259575A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　本発明の研磨用組成物は、金属膜を研摩する、いわゆる仕上げ研磨に好適な研磨用組成物であって、砥粒として、光散乱法により求められる平均粒子径が２０ｎｍ以上８０ｎｍ未満であるコロイダルシリカと、酸化剤として、ヨウ素酸およびその塩から選ばれる少なくとも一種とを含み、残部が水である。これらを含むことで、非選択性を実現するとともに、ディッシングおよびエロージョンを十分に抑制することができる。
PCT/JP2008/060571 2007-06-08 2008-06-09 研磨用組成物 WO2008150012A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/451,932 US20100163787A1 (en) 2007-06-08 2008-06-09 Polishing composition
CN200880024544.4A CN101743624B (zh) 2007-06-08 2008-06-09 研磨用组合物
JP2009517925A JP4459298B2 (ja) 2007-06-08 2008-06-09 研磨用組成物
US14/727,467 US20150259575A1 (en) 2007-06-08 2015-06-01 Polishing composition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-153422 2007-06-08
JP2007153422 2007-06-08

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/451,932 A-371-Of-International US20100163787A1 (en) 2007-06-08 2008-06-09 Polishing composition
US14/727,467 Continuation US20150259575A1 (en) 2007-06-08 2015-06-01 Polishing composition

Publications (1)

Publication Number Publication Date
WO2008150012A1 true WO2008150012A1 (ja) 2008-12-11

Family

ID=40093814

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060571 WO2008150012A1 (ja) 2007-06-08 2008-06-09 研磨用組成物

Country Status (6)

Country Link
US (2) US20100163787A1 (ja)
JP (1) JP4459298B2 (ja)
KR (2) KR20100031730A (ja)
CN (1) CN101743624B (ja)
TW (1) TW200911971A (ja)
WO (1) WO2008150012A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8580690B2 (en) 2011-04-06 2013-11-12 Nanya Technology Corp. Process of planarizing a wafer with a large step height and/or surface area features

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095946A (ja) * 2005-09-28 2007-04-12 Fujifilm Corp 金属用研磨液及び研磨方法
JP2007095714A (ja) * 2005-09-26 2007-04-12 Fujifilm Corp 研磨方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1199305A (en) * 1982-01-21 1986-01-14 C-I-L Inc. Anodic protection system and method
US6972083B2 (en) * 2002-09-27 2005-12-06 Agere Systems, Inc. Electrochemical method and system for monitoring hydrogen peroxide concentration in slurries
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
TWI363796B (en) * 2004-06-14 2012-05-11 Kao Corp Polishing composition
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
US8551202B2 (en) * 2006-03-23 2013-10-08 Cabot Microelectronics Corporation Iodate-containing chemical-mechanical polishing compositions and methods
TWI411667B (zh) * 2006-04-28 2013-10-11 Kao Corp 磁碟基板用之研磨液組成物
US7776230B2 (en) * 2006-08-30 2010-08-17 Cabot Microelectronics Corporation CMP system utilizing halogen adduct

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007095714A (ja) * 2005-09-26 2007-04-12 Fujifilm Corp 研磨方法
JP2007095946A (ja) * 2005-09-28 2007-04-12 Fujifilm Corp 金属用研磨液及び研磨方法

Also Published As

Publication number Publication date
JPWO2008150012A1 (ja) 2010-08-26
KR20100031730A (ko) 2010-03-24
KR20110079724A (ko) 2011-07-07
TWI333506B (ja) 2010-11-21
CN101743624B (zh) 2014-07-02
TW200911971A (en) 2009-03-16
CN101743624A (zh) 2010-06-16
US20150259575A1 (en) 2015-09-17
JP4459298B2 (ja) 2010-04-28
US20100163787A1 (en) 2010-07-01

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