SG170755A1 - Iodate-containing chemical-mechanical polishing compositions and methods - Google Patents

Iodate-containing chemical-mechanical polishing compositions and methods

Info

Publication number
SG170755A1
SG170755A1 SG201102048-4A SG2011020484A SG170755A1 SG 170755 A1 SG170755 A1 SG 170755A1 SG 2011020484 A SG2011020484 A SG 2011020484A SG 170755 A1 SG170755 A1 SG 170755A1
Authority
SG
Singapore
Prior art keywords
methods
iodate
mechanical polishing
polishing compositions
containing chemical
Prior art date
Application number
SG201102048-4A
Other languages
English (en)
Inventor
Shoutian Li
Phillip Carter
Jian Zhang
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG170755A1 publication Critical patent/SG170755A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG201102048-4A 2006-03-23 2007-03-06 Iodate-containing chemical-mechanical polishing compositions and methods SG170755A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/387,558 US8551202B2 (en) 2006-03-23 2006-03-23 Iodate-containing chemical-mechanical polishing compositions and methods

Publications (1)

Publication Number Publication Date
SG170755A1 true SG170755A1 (en) 2011-05-30

Family

ID=38269104

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201102048-4A SG170755A1 (en) 2006-03-23 2007-03-06 Iodate-containing chemical-mechanical polishing compositions and methods

Country Status (10)

Country Link
US (1) US8551202B2 (ja)
EP (1) EP1996663A2 (ja)
JP (1) JP5576112B2 (ja)
KR (1) KR101372208B1 (ja)
CN (1) CN101389723B (ja)
IL (1) IL192551A (ja)
MY (1) MY150410A (ja)
SG (1) SG170755A1 (ja)
TW (1) TWI358449B (ja)
WO (1) WO2007111813A2 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005120775A1 (en) * 2004-06-08 2005-12-22 S.O.I. Tec Silicon On Insulator Technologies Planarization of a heteroepitaxial layer
TW200911971A (en) * 2007-06-08 2009-03-16 Nitta Haas Inc Polishing composition
US7922926B2 (en) * 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
CN101906270A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光液
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法
CN102268225B (zh) * 2011-05-30 2014-03-26 上海百兰朵电子科技有限公司 永悬浮钻石研磨液
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN103265893B (zh) * 2013-06-04 2015-12-09 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
WO2015037311A1 (ja) * 2013-09-10 2015-03-19 日立化成株式会社 スラリー、研磨液セット、研磨液、基体の研磨方法及び基体
CN107491110B (zh) * 2017-09-20 2019-12-13 山东大学 pH稳定且具有酸碱缓冲的氧化铝分散液及其制备方法
TWI761921B (zh) * 2019-10-30 2022-04-21 南韓商Ｓｋｃ索密思股份有限公司 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
TW512170B (en) 1998-07-24 2002-12-01 Ibm Aqueous slurry composition and method for polishing a surface using the same
US6375693B1 (en) 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
JP2001139937A (ja) * 1999-11-11 2001-05-22 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US6355075B1 (en) 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6364920B1 (en) 2000-04-21 2002-04-02 Saint-Gobain Ceramics & Plastics, Inc. CMP formulations
US6409781B1 (en) 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6599173B1 (en) 2000-06-30 2003-07-29 International Business Machines Corporation Method to prevent leaving residual metal in CMP process of metal interconnect
US6468137B1 (en) 2000-09-07 2002-10-22 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system
US20020173243A1 (en) * 2001-04-05 2002-11-21 Costas Wesley D. Polishing composition having organic polymer particles
US7279119B2 (en) 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
US6589100B2 (en) * 2001-09-24 2003-07-08 Cabot Microelectronics Corporation Rare earth salt/oxidizer-based CMP method
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US7316603B2 (en) 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US20030139047A1 (en) 2002-01-24 2003-07-24 Thomas Terence M. Metal polishing slurry having a static etch inhibitor and method of formulation
US6821309B2 (en) 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US20040077295A1 (en) * 2002-08-05 2004-04-22 Hellring Stuart D. Process for reducing dishing and erosion during chemical mechanical planarization
US6911393B2 (en) * 2002-12-02 2005-06-28 Arkema Inc. Composition and method for copper chemical mechanical planarization
JP2004311565A (ja) * 2003-04-03 2004-11-04 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
TWI244498B (en) * 2003-11-20 2005-12-01 Eternal Chemical Co Ltd Chemical mechanical abrasive slurry and method of using the same
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
US20090215269A1 (en) 2005-06-06 2009-08-27 Advanced Technology Materials Inc. Integrated chemical mechanical polishing composition and process for single platen processing
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液

Also Published As

Publication number Publication date
IL192551A0 (en) 2009-02-11
JP5576112B2 (ja) 2014-08-20
MY150410A (en) 2014-01-15
JP2009530849A (ja) 2009-08-27
KR20080108561A (ko) 2008-12-15
CN101389723A (zh) 2009-03-18
US8551202B2 (en) 2013-10-08
WO2007111813A3 (en) 2008-03-13
WO2007111813A2 (en) 2007-10-04
IL192551A (en) 2013-03-24
TW200801166A (en) 2008-01-01
US20070224919A1 (en) 2007-09-27
CN101389723B (zh) 2012-05-30
TWI358449B (en) 2012-02-21
KR101372208B1 (ko) 2014-03-07
EP1996663A2 (en) 2008-12-03

Similar Documents

Publication Publication Date Title
TW200801166A (en) Iodate-containing chemical-mechanical polishing compositions and methods
TW200720383A (en) Polishing fluids and methods for CMP
TW200732460A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
MY149975A (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
TW200630472A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
SG171622A1 (en) Polishing composition containing polyether amine
MY148323A (en) Stable, high rate silicon slurry
WO2015004567A3 (en) Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
MY156687A (en) Cmp compositions and method for suppressing polysilicon removal rates
TW200513527A (en) Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
TWI373070B (en) Wafer delivery/reception device, polishing device, and method for receiving wafers
MY147729A (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
IL189305A0 (en) High throughput chemical mechanical polishing composition for metal film planarization
TW201129659A (en) Composition and method for polishing bulk silicon
IL179570A0 (en) Cmp composition for improved oxide removal rate
TW200700544A (en) Polymeric inhibitors for enhanced planarization
EP3333232A3 (en) Chemical mechanical polishing composition having chemical additives and methods for using
SG144048A1 (en) Compositions for chemical mechanical planarization of copper
MY148620A (en) Metal ion-containing cmp composition and method for using the same
TW201612305A (en) Cleaning composition following CMP and methods related thereto
TW200740968A (en) Polishing composition for silicon wafer
TW200624545A (en) Composition and associated method for catalyzing removal rates of dielectric films during chemical mechanical planarization
GB0705541D0 (en) Polishing composition for silicon wafer
TW200732389A (en) Abrasive grain-free polishing liquid and CMP polishing method
EP2090400A4 (en) MEANS FOR CHEMICAL-MECHANICAL POLISHING (CMP), ADDITIVE SOLUTION FOR THE CMP POLISHERS AND METHOD FOR POLISHING A SUBSTRATE THROUGH THE USE OF THE POLISHING AGENT AND THE ADDITIVE SOLUTION