TW200732389A - Abrasive grain-free polishing liquid and CMP polishing method - Google Patents

Abrasive grain-free polishing liquid and CMP polishing method

Info

Publication number
TW200732389A
TW200732389A TW095148566A TW95148566A TW200732389A TW 200732389 A TW200732389 A TW 200732389A TW 095148566 A TW095148566 A TW 095148566A TW 95148566 A TW95148566 A TW 95148566A TW 200732389 A TW200732389 A TW 200732389A
Authority
TW
Taiwan
Prior art keywords
cmp
polishing liquid
cmp polishing
agent
liquid
Prior art date
Application number
TW095148566A
Other languages
Chinese (zh)
Other versions
TWI332017B (en
Inventor
Katsumi Mabuchi
Haruo Akahoshi
Masanobu Habiro
Takafumi Sakurada
Yutaka Nomura
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200732389A publication Critical patent/TW200732389A/en
Application granted granted Critical
Publication of TWI332017B publication Critical patent/TWI332017B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

This invention provides a CMP polishing liquid which is mixed with an oxidizing agent when used for polishing. This CMP polishing liquid contains a copper antirust agent, a water-soluble polymer, a pH-adjusting agent and water, and does not substantially contain abrasive grains. By using such a CMP polishing liquid, dishing in chemical polishing of copper can be effectively suppressed, thereby forming a wiring with high reliability. It is preferable that the contents of the antirust agent, water-soluble polymer and oxidizing agent are respectively 0.1-5% by weight, 0.05-5% by weight and 0.01-5M per liter of the CMP polishing liquid, and the pH-adjusting agent is contained in such an amount necessary for adjusting the pH of the CMP liquid to 1.5-2.5.
TW095148566A 2005-12-26 2006-12-22 Abrasive-free polishing slurry and cmp process TWI332017B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005371858 2005-12-26

Publications (2)

Publication Number Publication Date
TW200732389A true TW200732389A (en) 2007-09-01
TWI332017B TWI332017B (en) 2010-10-21

Family

ID=38217954

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095148566A TWI332017B (en) 2005-12-26 2006-12-22 Abrasive-free polishing slurry and cmp process

Country Status (5)

Country Link
JP (1) JPWO2007074734A1 (en)
KR (1) KR101078490B1 (en)
CN (1) CN101346805B (en)
TW (1) TWI332017B (en)
WO (1) WO2007074734A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5218228B2 (en) * 2008-04-23 2013-06-26 新東工業株式会社 Conveying device and blasting device
JP5321796B2 (en) * 2008-09-17 2013-10-23 Ｊｓｒ株式会社 Chemical mechanical polishing aqueous dispersion for use in circuit board production, circuit board production method, circuit board, and multilayer circuit board
JP5614498B2 (en) 2011-04-26 2014-10-29 旭硝子株式会社 Polishing method of non-oxide single crystal substrate
KR20140076566A (en) 2011-10-07 2014-06-20 아사히 가라스 가부시키가이샤 Single-crystal silicon-carbide substrate and polishing solution
JP7125386B2 (en) * 2017-03-23 2022-08-24 株式会社フジミインコーポレーテッド Polishing composition
US11043396B2 (en) * 2018-07-31 2021-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polish slurry and method of manufacture

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144052A (en) * 1999-11-16 2001-05-25 Hitachi Chem Co Ltd Method of polishing substrate
JP2002198332A (en) * 2001-10-15 2002-07-12 Hitachi Chem Co Ltd Metal polishing liquid and polishing method using it
JP2003342800A (en) * 2002-05-21 2003-12-03 Sony Corp Polishing method, polishing apparatus and method of producing semiconductor device
JP2004014813A (en) * 2002-06-07 2004-01-15 Showa Denko Kk Metal polishing composition, polishing method using the same, and substrate manufacturing method using the same
JP2004153086A (en) * 2002-10-31 2004-05-27 Showa Denko Kk Metal abrasive compound, metal film grinding method and substrate manufacturing method
JP3860528B2 (en) * 2002-11-12 2006-12-20 株式会社東芝 Manufacturing method of semiconductor device
JP2005142597A (en) * 2005-02-16 2005-06-02 Hitachi Chem Co Ltd Polishing liquid for metal and method of polishing using same

Also Published As

Publication number Publication date
CN101346805A (en) 2009-01-14
KR101078490B1 (en) 2011-10-31
KR20080078854A (en) 2008-08-28
WO2007074734A1 (en) 2007-07-05
JPWO2007074734A1 (en) 2009-06-04
TWI332017B (en) 2010-10-21
CN101346805B (en) 2011-04-20

Similar Documents

Publication Publication Date Title
TW200732389A (en) Abrasive grain-free polishing liquid and CMP polishing method
TW200720383A (en) Polishing fluids and methods for CMP
WO2010120784A8 (en) Chemical mechanical polishing of silicon carbide comprising surfaces
TWI414573B (en) Compositions and methods for cmp of semiconductor materials
WO2006081149A3 (en) Novel polishing slurries and abrasive-free solutions having a multifunctional activator
WO2006074248A3 (en) Engineered non-polymeric organic particles for chemical mechanical planarization
WO2008105342A1 (en) Metal polishing liquid and polishing method
TW200833826A (en) CMP of copper/ruthenium/tantalum substrates
MY149519A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
TW200740971A (en) Oxidation-stabilized CMP compositions and methods
TW200740972A (en) Metal polishing slurry
TW200502340A (en) Improved chemical mechanical polishing compositions for copper and associated materials and method of using same
TW200801166A (en) Iodate-containing chemical-mechanical polishing compositions and methods
WO2002020682A3 (en) Method of initiating copper cmp process
WO2009025383A1 (en) Polishing composition
WO2009070239A3 (en) Copper-passivating cmp compositions and methods
TW200634137A (en) Metal ion-containing CMP composition and method for using the same
TW200619364A (en) Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry
SG144048A1 (en) Compositions for chemical mechanical planarization of copper
IL179570A0 (en) Cmp composition for improved oxide removal rate
KR20140071446A (en) Polishing composition
MY192435A (en) Polishing composition, method for producing substrate, and method for polishing same
IL189504A0 (en) Abrasive-free polishing method
CN106928856A (en) A kind of acidic chemical machine polishing liquor
TW200734487A (en) Composition and method for enhancing pot life of hydrogen peroxide-containing CMP slurries

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees