JP5080261B2 - 金属イオンコーティングcmp組成物及びその使用方法 - Google Patents
金属イオンコーティングcmp組成物及びその使用方法 Download PDFInfo
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- JP5080261B2 JP5080261B2 JP2007538999A JP2007538999A JP5080261B2 JP 5080261 B2 JP5080261 B2 JP 5080261B2 JP 2007538999 A JP2007538999 A JP 2007538999A JP 2007538999 A JP2007538999 A JP 2007538999A JP 5080261 B2 JP5080261 B2 JP 5080261B2
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- chemical mechanical
- mechanical polishing
- polishing composition
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- metal
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- 239000000203 mixture Substances 0.000 title claims description 186
- 238000000034 method Methods 0.000 title claims description 47
- 229910021645 metal ion Inorganic materials 0.000 title description 43
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 claims description 216
- 239000000126 substance Substances 0.000 claims description 163
- 239000000758 substrate Substances 0.000 claims description 108
- 229910052751 metal Inorganic materials 0.000 claims description 92
- 239000002184 metal Substances 0.000 claims description 92
- 150000003839 salts Chemical class 0.000 claims description 59
- 150000002500 ions Chemical class 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 12
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- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 9
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- 239000002738 chelating agent Substances 0.000 claims description 9
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- 229910003872 O—Si Inorganic materials 0.000 claims description 5
- 150000003841 chloride salts Chemical class 0.000 claims description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
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- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000007942 carboxylates Chemical class 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
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- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 3
- BRARRAHGNDUELT-UHFFFAOYSA-N 3-hydroxypicolinic acid Chemical compound OC(=O)C1=NC=CC=C1O BRARRAHGNDUELT-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 150000001242 acetic acid derivatives Chemical class 0.000 description 2
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- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
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- 239000000908 ammonium hydroxide Substances 0.000 description 2
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- 229910021641 deionized water Inorganic materials 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
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- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- QLBHNVFOQLIYTH-UHFFFAOYSA-L dipotassium;2-[2-[bis(carboxymethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical compound [K+].[K+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O QLBHNVFOQLIYTH-UHFFFAOYSA-L 0.000 description 1
- 229940009662 edetate Drugs 0.000 description 1
- 229940058180 edetate dipotassium anhydrous Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- FPIQZBQZKBKLEI-UHFFFAOYSA-N ethyl 1-[[2-chloroethyl(nitroso)carbamoyl]amino]cyclohexane-1-carboxylate Chemical compound ClCCN(N=O)C(=O)NC1(C(=O)OCC)CCCCC1 FPIQZBQZKBKLEI-UHFFFAOYSA-N 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 229960001031 glucose Drugs 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- 229960002989 glutamic acid Drugs 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical class [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 229940001447 lactate Drugs 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- DOYOPBSXEIZLRE-UHFFFAOYSA-N pyrrole-3-carboxylic acid Natural products OC(=O)C=1C=CNC=1 DOYOPBSXEIZLRE-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229940086735 succinate Drugs 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Description
(△H/△t)=Kp(L/A)(△s/△t)、
ここで△H/△tは単位研磨時間あたりの高さの変化という観点での材料の除去速度であり、Lは表面積Aにわたってかかる負荷であり、△s/△tは基材に対するパッドの相対速度であり、そしてKpはプレストン係数である。この式は、所与の(L/A)に対して、研磨した材料の質量損失が移動量に比例すること、そして時間が経っても不変のままであることを、予測する。研磨速度は圧力(L/A)及び速度とともに上昇する。すなわち、除去速度は圧力の線形関数であり、(圧力が)高い点ではより早く研磨され、表面は直ぐに平坦化される。
この例は化学機械研磨組成物における金属イオンのM−O−Si結合エネルギーとこのような化学機械研磨組成物で得られる基材除去速度との間の関係を明らかにする。
定盤(platen)速度=60rpm
下向き荷重(downforce)=27.6kPa(4psi)
キャリア速度=56rpm
スラリー流速=200mL/分
パッド温度=22〜30℃
各化学機械研磨組成物は、平均粒子サイズ130nmの0.15質量%のセリア、0.06質量%の酸、水を含み、及び金属塩は0か又は0.5ミリモル濃度の金属塩を含む。化学機械研磨組成物のpHは5に調整した。
この例は化学機械研磨組成物における金属イオンのM−O−Si結合エネルギーとこのような化学機械研磨組成物で得られる基材除去速度との間の関係を明らかにする。
定盤(platen)速度=60rpm
下向き荷重(downforce)=27.6kPa(4psi)
キャリア速度=56rpm
スラリー流速=200mL/分
パッド温度=22〜30℃
各化学機械研磨組成物は、平均粒子サイズ130nmの0.15質量%のセリア、0.06質量%の酸、水を含み、及び金属塩は0か又は0.5ミリモル濃度の金属塩を含む。化学機械研磨組成物のpHは5に調整した。
この例は化学機械研磨組成物のpHとこのような化学機械研磨組成物で得られる基材除去速度との間の関係を明らかにする。
定盤(platen)速度=60rpm
下向き荷重(downforce)=27.6kPa(4psi)
キャリア速度=56rpm
スラリー流速=200mL/分
パッド温度=22〜30℃
この化学機械研磨組成物は、平均粒子サイズ130nmの0.15質量%のセリア、0.06質量%の酸、及び水、(すなわち金属塩は存在しない)を含む。0.5mMのAlCl3を各化学機械研磨組成物に加えたことを除いて同じ化学機械研磨組成物を用いて前述の手順を繰り返した。
この例は化学機械研磨組成物中で3kcal/モルに等しいか又はそれより大きいM−O−Si結合エネルギーを有する金属イオンの濃度とこのような化学機械研磨組成物で得られる基材除去速度との間の関係を明らかにする。
定盤(platen)速度=60rpm
下向き荷重(downforce)=4psi
キャリア速度=56rpm
スラリー流速=200mL/分
パッド温度=22〜30℃
この化学機械研磨組成物は、平均粒子サイズ130nmの0.15質量%のセリア、0.06質量%の酸、水、及び0、0.05、0.5又は5mMのいずれかのAlCl3を含む。
[0066]
本発明は以下の態様を含んでもよい。
[書類名] 特許請求の範囲
[1]
(a)砥材、
(b)3kcal/モル以上のM−O−Si結合エネルギーを有する金属イオン(M)、及び
(c)液体キャリア
を含んでなる、化学機械研磨組成物。
[2]
金属イオンが3.5kcal/モル以上のM−O−Si結合エネルギーを有する、[1]に記載された化学機械研磨組成物。
[3]
金属イオンが4kcal/モル以上のM−O−Si結合エネルギーを有する、[2]に記載された化学機械研磨組成物。
[4]
金属イオンが金属塩の形態で提供される、[1]に記載された化学機械研磨組成物。
[5]
金属塩が金属塩化物塩である、[4]に記載された化学機械研磨組成物。
[6]
金属塩がAl3+、Cr3+、Fe2+、Sc3+、又はそれらの組合せを含んでなる、[4]に記載された化学機械研磨組成物。
[7]
金属塩がAl3+を含んでなる、[6]に記載された化学機械研磨組成物。
[8]
化学機械研磨組成物のpHが3〜7である、[7]に記載された化学機械研磨組成物。
[9]
化学機械研磨組成物のpHが4〜7である、[8]に記載された化学機械研磨組成物。
[10]
Al3+イオンの濃度が0.05mM〜1mMである、[7]に記載された化学機械研磨組成物。
[11]
Al3+イオンの濃度が0.05mM〜0.5mMである、[10]に記載された化学機械研磨組成物。
[12]
化学機械研磨組成物のpHが7以下の、[1]に記載された化学機械研磨組成物。
[13]
化学機械研磨組成物のpHが6以下の、[12]に記載された化学機械研磨組成物。
[14]
化学機械研磨組成物のpHが4〜6である、[13]に記載された化学機械研磨組成物。
[15]
金属イオンの濃度が0.05mM以上の、[1]に記載された化学機械研磨組成物。
[16]
金属イオンの濃度が0.25mM以上の、[15]に記載された化学機械研磨組成物。
[17]
金属イオンの濃度が0.5mM以上の、[16]に記載された化学機械研磨組成物。
[18]
金属イオンの濃度が1mM以上の、[17]に記載された化学機械研磨組成物。
[19]
金属イオンの濃度が5mM以上の、[18]に記載された化学機械研磨組成物。
[20]
砥材が、アルミナ、炭化ホウ素、セリア、クロミア、ダイヤモンド、ゲルマニア、酸化鉄、マグネシア、シリカ、炭化ケイ素、チタニア、窒化チタン、炭化タングステン、ジルコニア、又はそれらの組合せを含んでなる、[1]に記載された化学機械研磨組成物。
[21]
化学機械研磨組成物が錯化剤又はキレート剤をさらに含んでなる、[1]に記載された化学機械研磨組成物。
[22]
金属イオンが非アルミニウム金属イオンである、[1]に記載された化学機械研磨組成物。
[23]
(a)基材を提供する工程、
(b)以下を含む化学機械研磨組成物を提供する工程:
(i)砥材、
(ii)3kcal/モルに等しいか又はそれより大きいM−O−Si結合エネルギーを有する金属イオン(M)、及び
(iii)液体キャリア、
(c)化学機械研磨組成物を基材の少なくとも一部に適用する工程、並びに
(d)基材を研磨するために化学機械研磨材で基材の少なくとも一部を磨り減らす工程、を含んでなる基材を研磨する方法。
[24]
金属イオンが3.5kcal/モル以上のM−O−Si結合エネルギーを有する、[23]に記載された方法。
[25]
金属イオンが4kcal/モル以上のM−O−Si結合エネルギーを有する、[24]に記載された方法。
[26]
金属イオンが金属塩の形態で提供される、[23]に記載された方法。
[27]
金属塩が金属塩化物塩である、[26]に記載された方法。
[28]
金属塩がAl3+、Cr3+、Fe2+、Sc3+、又はそれらの組合せを含んでなる、[26]に記載された方法。
[29]
金属塩がAl3+を含んでなる、[28]に記載された方法。
[30]
化学機械研磨組成物のpHが3〜7である、[29]に記載された方法。
[31]
化学機械研磨組成物のpHが4〜7である、[30]に記載された方法。
[32]
Al3+イオンの濃度が0.05mM〜1mMである、[29]に記載された方法。
[33]
Al3+イオンの濃度が0.05mM〜0.5mMである、[32]に記載された方法。
[34]
化学機械研磨組成物のpHが7以下の、[23]に記載された方法。
[35]
化学機械研磨組成物のpHが6以下の、[34]に記載された方法。
[36]
化学機械研磨組成物のpHが4〜6である、[35]に記載された方法。
[37]
金属イオンの濃度が0.05mM以上の、[23]に記載された方法。
[38]
金属イオンの濃度が0.25mM以上の、[37]に記載された方法。
[39]
金属イオンの濃度が0.5mM以上の、[38]に記載された方法。
[40]
金属イオンの濃度が1mM以上の、[39]に記載された方法。
[41]
金属イオンの濃度が5mM以上の、[40]に記載された方法。
[42]
砥材が、アルミナ、炭化ホウ素、セリア、クロミア、ダイヤモンド、ゲルマニア、酸化鉄、マグネシア、シリカ、炭化ケイ素、チタニア、窒化チタン、炭化タングステン、ジルコニア、又はそれらの組合せを含んでなる、[23]に記載された方法。
[43]
化学機械研磨組成物が錯化剤又はキレート剤をさらに含んでなる、[23]に記載された方法。
[44]
金属イオンが非アルミニウム金属イオンである、[23]に記載された方法。
[45]
基材が第二の層に付着した第一の金属層を含んでなる、[23]に記載された方法。
Claims (19)
- (a)セリアからなる、0.1wt%〜20wt%の砥材、
(b)Al 3+ イオンの濃度が0.05mM〜1mMであるAl 3+ イオン、
(c)有機酸、及び
(d)液体キャリア
から本質的になり、4〜6のpHを有する化学機械研磨組成物。 - Al 3+ イオンが3.5kcal/モル以上のAl−O−Si結合エネルギーを有する、請求項1に記載された化学機械研磨組成物。
- Al 3+ イオンが4kcal/モル以上のAl−O−Si結合エネルギーを有する、請求項2に記載された化学機械研磨組成物。
- Al 3+ イオンが金属塩の形態で提供される、請求項1に記載された化学機械研磨組成物。
- 金属塩が金属塩化物塩である、請求項4に記載された化学機械研磨組成物。
- Al3+イオンの濃度が0.05mM〜0.5mMである、請求項4に記載された化学機械研磨組成物。
- Al 3+ イオンの濃度が0.25mM以上の、請求項1に記載された化学機械研磨組成物。
- Al 3+ イオンの濃度が0.5mM以上の、請求項7に記載された化学機械研磨組成物。
- 化学機械研磨組成物が錯化剤又はキレート剤をさらに含んでなる、請求項1に記載された化学機械研磨組成物。
- (a)基材を提供する工程、
(b)以下から本質的になり、4〜6のpHを有する化学機械研磨組成物を提供する工程:
(i)セリアからなる、0.1wt%〜20wt%の砥材、
(ii)Al 3+ イオンの濃度が0.05mM〜1mMであるAl 3+ イオン、
(iii)有機酸、及び
(iv)液体キャリア、
(c)化学機械研磨組成物を基材の少なくとも一部に適用する工程、並びに
(d)基材を研磨するために化学機械研磨材で基材の少なくとも一部を磨り減らす工程、を含んでなる基材を研磨する方法。 - Al 3+ イオンが3.5kcal/モル以上のAl−O−Si結合エネルギーを有する、請求項10に記載された方法。
- Al 3+ イオンが4kcal/モル以上のAl−O−Si結合エネルギーを有する、請求項11に記載された方法。
- Al 3+ イオンが金属塩の形態で提供される、請求項10に記載された方法。
- 金属塩が金属塩化物塩である、請求項13に記載された方法。
- Al3+イオンの濃度が0.05mM〜0.5mMである、請求項13に記載された方法。
- Al 3+ イオンの濃度が0.25mM以上の、請求項10に記載された方法。
- Al 3+ イオンの濃度が0.5mM以上の、請求項16に記載された方法。
- 化学機械研磨組成物が錯化剤又はキレート剤をさらに含んでなる、請求項10に記載された方法。
- 基材が第二の層に付着した第一の金属層を含んでなる、請求項10に記載された方法。
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US10/974,460 US8038752B2 (en) | 2004-10-27 | 2004-10-27 | Metal ion-containing CMP composition and method for using the same |
PCT/US2005/037831 WO2006049892A2 (en) | 2004-10-27 | 2005-10-21 | Metal ion-containing cmp composition and method for using the same |
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US20060086055A1 (en) | 2006-04-27 |
TW200634137A (en) | 2006-10-01 |
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